CN200969356Y

CN200969356Y - High power light-emitting diode

Info

Publication number: CN200969356Y
Application number: CNU2006200150936U
Authority: CN
Inventors: 薛丹琳
Original assignee: WAH WANG OPTOELECTRONICS (SHENZHEN) CO Ltd
Current assignee: WAH WANG OPTOELECTRONICS (SHENZHEN) CO Ltd
Priority date: 2006-10-09
Filing date: 2006-10-09
Publication date: 2007-10-31
Anticipated expiration: 2016-10-09

Abstract

The utility model relates to a high power luminescent diode, which includes a base (1), a stent electrode (21, 22) fixed in the base (1), a wafer (3) and gold thread (4), as well as an external sealing colloid (5) and a focusing lens (6) covered on the base (1), both ends of the gold thread (4) are respectively welded to stent electrode and wafer electrode, the diode also includes a copper column (8), cylinder via holes (11) for accepting the copper column (8) are opened in the base (1), the lower surface of the wafer (3) is fixed on the upper surface of the copper column (8) with eutectic mode by aurum-tin alloy layer. Compared to present technology, the high power luminescent diode of the utility model has the advantages of good performance of heat dissipation, long service life, etc.

Description

Large-power light-emitting diodes

Technical field the utility model relates to the photoemissive semiconductor device that is applicable to that has a jump in potential potential barrier or surface potential barrier at least, particularly relates to light-emitting diode.

Background technology prior art large-power light-emitting diodes comprises base, is fixed on two stands electrode, wafer and two gold threads in the base, and outer adhesive body and the base-mounted collector lens of lid, weld with stent electrode and chip electrode respectively at the two ends of described gold thread.The subject matter that the prior art heavy-duty diode exists is exactly that heat dispersion is relatively poor, and this problem does not have solution preferably always, reason is, described wafer adopts solid brilliant primer to stick on the platform of stent electrode bearing wafer, these solid brilliant primers normally do not contain the epoxy resin or the high molecular polymer of heat-conductivity conducting metal powder, its conductive coefficient is low, and heat conductivility is poor.Moreover described base is made of plastics, and heat conductivility is also bad, and therefore, the heat that light-emitting diode produces is difficult to distribute, and major part is detained in base inside, causes the product light decay serious even burn out, and useful life is short.Also have; weld at gold thread and stent electrode; the prior art large-power light-emitting diodes all be with bonding equipment with the gold thread pressure welding on stent electrode; weld at gold thread and stent electrode does not add any safeguard measure; can not guarantee that like this gold thread firmly is connected with stent electrode, the rosin joint situation is difficult to avoid.Have again; gold thread between prior art LED wafer electrode and the stent electrode is not almost reserved tensile elongation; because the coefficient of expansion of support, wafer, colloid epoxy resin and gold thread is different; and light-emitting diode in use; Shi Changhui is in the environment of high temperature; gold thread, is broken after repeatedly being pullled easily often being subjected to thermal shock like this, and useful life is short.

Utility model content the technical problems to be solved in the utility model is to avoid above-mentioned the deficiencies in the prior art part and the large-power light-emitting diodes that proposes a kind of perfect heat-dissipating, long service life.

The utility model solve the technical problem can be by realizing by the following technical solutions:

Design, use large-power light-emitting diodes, comprise base, be fixed on stent electrode, wafer and gold thread in the base, and outer adhesive body and the base-mounted collector lens of lid, weld with stent electrode and chip electrode respectively at the two ends of described gold thread, also comprise the copper post, have the cylindrical hole of placing described copper post in the described base, described wafer lower surface is fixed on the upper surface of described copper post in the eutectic mode by gold-tin alloy.

Described copper post is two sections multidiameter shapes, and the diameter of epimere axle is less than the diameter of hypomere axle.

The weld of described gold thread and stent electrode is coated with protective layer, in the actual fabrication, this protective layer be one deck heat-conductivity conducting medium of mixing with epoxy resin of silver powder or for and the gold goal of gold thread with material.

Described gold thread stretches vertically upward from the wafer solder joint, bends towards the solder joint of stent electrode again, and forming two tangent line angle of cut α in the knee is the camber line of acute angle.

Compare with prior art, the technique effect of the utility model large-power light-emitting diodes is: 1. the copper post is installed in base, wafer is fixed on the upper surface of copper post, because the copper post can be high temperature resistant, like this can be before encapsulation, with eutectic welder skill wafer directly is weldingly fixed on copper post upper surface (stent electrode of prior art large-power light-emitting diodes and base non-refractory earlier, can not adopt eutectic welder skill that wafer is welded on the carrying platform of stent electrode, need to adopt the sticking card of solid brilliant primer), no longer need solid brilliant primer, thereby making heat transfer performance between wafer and the copper post improve coefficient of heat transfer greatly brings up to greater than 100W/M.K from common 2-3W/M.K, install them into again in the middle through hole of base, and then encapsulation, be designed to through hole in the middle of the base, heat directly distributes from the base bottom via the copper post, has solved the heat dissipation problem of heavy-duty diode so effectively, and the luminescent properties of raising product also increases the service life; 2. add protective layer at the solder joint place of gold thread and stent electrode, guarantee to be connected firmly between gold thread and the stent electrode, stop the rosin joint phenomenon simultaneously; 3. gold thread is extended into one in the knee two tangent line angle of cut α are the camber line of acute angle, reduce the stress of gold thread when expanding with heat and contract with cold, and leave enough tensile elongations to gold thread, strengthen the ability of the cold-resistant thermal shock of gold thread, reduce the possibility that gold thread is broken effectively, prolong the useful life of light-emitting diode.

Description of drawings

Fig. 1 is the perspective view of the base and the two stands electrode of the utility model large-power light-emitting diodes;

Fig. 2 is the sectional structure schematic diagram of described large-power light-emitting diodes.

Embodiment is described in further detail below in conjunction with the most preferred embodiment shown in the accompanying drawing.

The utility model large-power light-emitting diodes, as depicted in figs. 1 and 2, comprise base 1, be fixed on two

stands electrode

21,22, wafer 3 and two gold threads 4 in the base 1, and outer adhesive body 5 and lid be contained in the collector lens 6 on the base 1, the two ends of described gold thread 4 respectively with stent electrode and chip electrode welding; The lower periphery of described base 1 is a square, and top periphery is an octagon.Also comprise copper post 8, have the cylindrical hole 11 of placing described copper post 8 in the described base 1, described wafer 3 lower surfaces are fixed on the upper surface of described copper post 8 in the eutectic mode by gold-tin alloy.Described copper post 8 is two sections multidiameter shapes, and the diameter of epimere axle makes like this around copper post 8 epimeres and between the described through hole 11 and leaves the space so that outer adhesive body 5 can be filled encapsulation well less than the diameter of hypomere axle.

In the utility model, as shown in Figure 2, described gold thread 4 all is coated with protective layer 7 with the weld of

stent electrode

21,22, and in the actual fabrication, described protective layer 7 be one deck heat-conductivity conducting medium of mixing with epoxy resin of silver powder or is and the gold goal of gold thread with material.

As shown in Figure 2, described gold thread 4 stretches vertically upward from the wafer solder joint, bends towards the solder joint of stent electrode again, and forming two tangent line angle of cut α in the knee is the camber line of acute angle.

The utility model large-power light-emitting diodes, owing to be before encapsulation, wafer 3 to be welded on copper post 8 upper surfaces, described copper post 8 can be fit to the large power chip of multiple power, for example 1W, 3W, 5W and 8W or the like, like this can be as required, go out the large-power light-emitting diodes of multiple power with same base and copper column production, saved die sinking number of times and cost.

Claims

1. large-power light-emitting diodes, comprise base (1), be fixed on stent electrode (21,22), wafer (3) and gold thread (4) in the base (1), and outer adhesive body (5) and lid are contained in the collector lens (6) on the base (1), weld with stent electrode and chip electrode respectively at the two ends of described gold thread (4), it is characterized in that: also comprise copper post (8), have the cylindrical hole (11) of placing described copper post (8) in the described base (1), described wafer (3) lower surface is fixed on the upper surface of described copper post (8) in the eutectic mode by the gold-tin alloy layer.

2. large-power light-emitting diodes as claimed in claim 1 is characterized in that: described copper post (8) is two sections multidiameter shapes, and the diameter of epimere axle is less than the diameter of hypomere axle.

3. large-power light-emitting diodes as claimed in claim 1 is characterized in that: described gold thread (4) all is coated with protective layer (7) with the weld of stent electrode (21,22).

4. large-power light-emitting diodes as claimed in claim 3 is characterized in that: one deck heat-conductivity conducting medium that described protective layer (7) mixes with epoxy resin for silver powder or with for gold thread with the gold goal of material.

5. as each described large-power light-emitting diodes of claim 1 to 4, it is characterized in that: described gold thread (4) stretches vertically upward from the wafer solder joint, bends towards the solder joint of stent electrode again, and forming two tangent line angle of cut α in the knee is the camber line of acute angle.

6. large-power light-emitting diodes as claimed in claim 5 is characterized in that: the lower periphery of described base (1) is square, and top periphery is an octagon.