CN200965887Y - Ultrahigh brightness light-emitting diode - Google Patents
Ultrahigh brightness light-emitting diode Download PDFInfo
- Publication number
- CN200965887Y CN200965887Y CNU2006201315283U CN200620131528U CN200965887Y CN 200965887 Y CN200965887 Y CN 200965887Y CN U2006201315283 U CNU2006201315283 U CN U2006201315283U CN 200620131528 U CN200620131528 U CN 200620131528U CN 200965887 Y CN200965887 Y CN 200965887Y
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- electrode
- metab
- light
- emitting diode
- diode chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
A super high brightness LED of the utility model comprises a metallic base, a second electrode, an insulating sleeve, an LED chip and an encapsulating external cover; wherein, an upper surface, a lower surface, piercing holes and a first electrode of the metallic base are formed by stamping through a copper metal; the piercing hole penetrates between the upper surface and the lower surface; the first electrode is extended out from the lower surface of the metallic base; the insulating sleeve is coated with the external circumference of the second electrode and fixedly arranged in the piercing hole; the encapsulating external cover is encapsulated and coated at the external circumferences of the metallic base and the LED chip. The metallic base is provided with the upper surface, of which area is larger, so a plurality of red, green or blue LED wafers can be contained for one time and simultaneously the utility model emits light and the brightness is great; as the extremely great conductance and the heat dispersion of the metallic base, the electrical impedance can be reduced; the utility model can not easily generate heat and has good effect of dispersing heat.
Description
Technical field
The utility model relates to a kind of light-emitting diodes gift, refers to a kind of superhigh brightness LED especially.
Background technology
The tradition high brightness LED (as shown in Figure 1), directly be packaged with in its case for packaging 50 inside a light-emitting diode chip for backlight unit 51, with positive and negative electrode 53,52.When using lumination of light emitting diode, electric current enters via anodal 53 and the light-emitting diode chip for backlight unit 51 that arrives through gold thread 54 produces lights.Because traditional light-emitting diode chip for backlight unit 51 is encapsulated in outer cover 50 inside, the heat that is produced can only utilize the pin of negative pole 52 belows outwards to dispel the heat, because the heat that slight pin can distribute is limited, thereby can't the more heat of dissipation, so can only limit the light-emitting diode chip for backlight unit 51 of use at 0.25 * 0.5m/m size, little electric current 70mA, directly limited traditional light-emitting diode can't pass to big electric current or can't once mounting multiple chips 51 within it, can't promote its brightness at all.
Summary of the invention
At the deficiencies in the prior art, the purpose of this utility model is: a kind of superhigh brightness LED is provided, makes its heat dispersion better, can lead to big electric current, the once mounting multiple chips within it.
For achieving the above object, the technical solution adopted in the utility model is:
A kind of superhigh brightness LED is characterized in that: comprising:
One metab, be one-body molded go out a upper surface, a lower surface, a perforation, with one first electrode, describedly pass through that to prick be to be applied between described upper surface and the described lower surface, described first electrode is to be protruded out downwards by described lower surface one;
One second electrode, include a upper end, with a lower end;
One insulating case, be the described perforation inside that is coated on the described second electrode periphery and is installed in described metab in the lump. the described upper end of described second electrode protrudes out on the described upper surface, and the lower end of described second electrode protrudes out under the described lower surface;
At least one light-emitting diode chip for backlight unit is the described upper surface that sets firmly and be electrically connected described metab, and is electrically connected to the described upper end of described second electrode with at least one gold thread; And
One case for packaging is the periphery that wrapper overlays on described metab and described at least one light-emitting diode chip for backlight unit, and exposes outside the lower end of described first electrode and described second electrode.
Described metab is by the moulding of copper metal integrated punching.
Described metab more includes an external annulus, and it is to be installed in described upper surface outer peripheral edges and to extend upward.
Described external annulus is outward-dipping.
Compared with prior art, adopt the advantage that the utlity model has of technique scheme to be:
Because the upper surface of the utility model metab has than large tracts of land.So can be installed in many light-emitting diode chip for backlight unit simultaneously with simultaneously luminous, self energy has super brightness.And the excellent conductivity and the thermal diffusivity of the utility model metab, so when passing to big electric current when supplying many light-emitting diode chip for backlight unit simultaneously, the still little difficult living heat of electrical impedance, and metab can go out the complete dissipation of the heat that many light-emitting diode chip for backlight unit distributed rapidly.So splendid radiating effect is arranged, can promote useful life again.
Description of drawings
Fig. 1 is the cutaway view of existing high brightness LED;
Fig. 2 is the cutaway view of the utility model one preferred embodiment;
Fig. 3 is the top view of another preferred embodiment of the utility model;
Fig. 4 is the top view of the another preferred embodiment of the utility model.
Description of reference numerals: 1-metab; The 22-lower end; The 11-upper surface; The 20-insulating case; The 12-lower surface; 3,321～353-light-emitting diode chip for backlight unit; The 13-perforation; The 31-gold thread; 14-first electrode; The 4-case for packaging; 2-second electrode; The 15-external annulus; The 21-upper end; 311,312,313-gold thread.
Embodiment
The superhigh brightness LED of relevant the utility model one preferred embodiment please refer to shown in the cutaway view of Fig. 2, and it is by a metab 1, one second electrode 2, an insulating case 20, a light-emitting diode chip for backlight unit 3, is constituted with a case for packaging 4.
As shown in Figure 2, this routine metab 1 can mold by the alloy integrated punching of copper metal or copper nickeline a upper surface 11, a lower surface 12, a perforation 13, with one first electrode 14.Wherein, perforation 13 runs through between the upper surface 11 and described lower surface 12 of metab 1.First electrode 14 is meant a negative pole end, lower surface 12 bodies by metab 1 protrude out downwards, at this lay special stress on, first electrode 14 of this example protrudes out moulding downwards by metab 1 one, be to engage in order to replace prior welding mode, high temperature produces thermal strain or stress is concentrated at pad when avoiding welding, and causes its internal electrical impedance and causes energising and give birth to heat.In addition, this routine metab 1 more includes an external annulus 15, and external annulus 15 is around upper surface 11 outer peripheral edges that are installed in metab 1 and outside oblique diagonally extending.
In the present embodiment, second electrode 2 is meant a positive terminal, and it is to be a copper rod, and there is a upper end 21 top, and the below has auspicious 22.Insulating case 20 is the insulating case that a glass is made, and the periphery that is coated on second electrode 2 also is packed in the perforation 13 that is installed in metab 1 in the lump.
The light-emitting diode chip for backlight unit of present embodiment adopts separately a white-light light emitting chips 3 to send white light, and it also can use following one instead: red diodes wafer, green diode chip, with the blue light diode chip, to form monochromatic light-emitting diode.Certainly. also can use wherein two or three or many wafers all can with the light-emitting diode of forming the polychrome mixed light.In this example, be preferably light-emitting diode chip for backlight unit 3 sticked together with conducting resinl and be installed on the upper surface 11, should avoid with welding as far as possible or bore embedding etc. can producing stress and concentrating mode with electrical impedance to be electrically connected metab 1.
In the present embodiment, case for packaging 4 is peripheries that wrapper overlays on metab 1, and with light-emitting diode chip for backlight unit 3, gold thread 31, be encapsulated in its inside with the upper end 21 of second electrode 2.Wherein, the upper end 21 of second electrode 2 protrudes out on the upper surface 11 of metab 1, and lower end 22 protrudes out under the described lower surface 12, and gold thread 31 is to be connected electrically between second electrode, 2 upper ends 21 and the light-emitting diode chip for backlight unit 3.
Note that the lower end 22 that exposes outside first electrode 14 and second electrode 2 after 4 encapsulation of this routine case for packaging at least uses for external power supply.Preferably, keep metab 1 Lower Half and expose, can have more area of dissipation by coating.Again and, the external annulus 15 of this routine metab 1 is oblique outward-dipping extension, protects inner light-emitting diode chip for backlight unit 3 to form a cup-shaped, and forms a light reflection surface to strengthen brightness in cup.In addition, case for packaging 4 also encapsulates in the lump and envelopes external annulus 15, and external annulus 15 can avoid case for packaging 4 to come off at the same overhead kick shape of cup profile at this moment.
Therefore.When the positive terminal of an external power source to second electrode 2 is provided, during with the negative pole end of first electrode 14, electric current sees through gold thread 31 and is passed to light-emitting diode chip for backlight unit 3 to produce light.Because this routine metab 1 is by the moulding of copper metal integrated punching, therefore have excellent conductivity and the internal electrical impedance very little, so also be difficult for giving birth to hot when passing to big electric current.Again because the copper metal of the utility model metab 1 itself has excellent thermal diffusivity again by coating fully, so can dispel the heat rapidly with big area of dissipation.Therefore, this example can be used in big specification such as 1.0 * 1.0m/m size even 2.0 * 2.0m/m size or more than the big electric current 1A or use many light-emitting diode chip for backlight unit simultaneously, when producing the more bright super brightness of more traditional light-emitting diode chip for backlight unit.
See also the top view that Figure 3 shows that another preferred embodiment of the utility model, its structure is roughly identical with precedent, but with ruddiness, mercerising, together set firmly and be electrically connected the upper surface of metab with three different light-emitting diode chip for backlight unit 321,322,323 of blue light, and with 311,312,313 second electrodes that are not connected on the metab of gold thread, therefore when electrified light emitting, can produce RGB (RGB) primaries and then be mixed into white light.
Please consult shown in Figure 4ly again, be the top view of the another preferred embodiment of the utility model, its structure is also roughly identical with the first two example, only change with same color totally nine light-emitting diode chip for backlight unit 331～353 together set firmly and be electrically connected the upper surface of metab.This example can be according to the demand of different brightness, select wherein one to nine chips while electrified light emitting, promoting more high brightness, or electrified light emitting or constitutes every triplets of different colours RGB (RGB) three primary colors of as above example and blendes together white light adjusting brightness respectively.
By Fig. 3 and Fig. 4 as can be known, since the upper surface of the utility model metab have than large tracts of land.So can be installed in many light-emitting diode chip for backlight unit simultaneously with simultaneously luminous, self energy has super brightness.And the excellent conductivity and the thermal diffusivity of the utility model metab, so when passing to big electric current when supplying many light-emitting diode chip for backlight unit simultaneously, the still little difficult living heat of electrical impedance, and metab can go out the complete dissipation of the heat that many light-emitting diode chip for backlight unit distributed rapidly.So splendid radiating effect is arranged, can promote useful life again.
Above-mentioned metab can be the moulding of copper metal integrated punching, and it is one-body molded also to can be method for makings such as cold forging, rolling, die casting, or uses the alloy of metal material such as copper nickeline instead, or other heat conduction and heat radiation good metal also can.Above-mentioned metab can more include an external annulus, and it is to be installed in the upper surface outer peripheral edges and to extend upward.Described external annulus is can outward-dippingly or upwards flat stretch all can.
Above-mentioned insulating case can be a glass, bakelite.Or the made insulating case of other equivalence insulation material.
Above-mentioned at least one light-emitting diode chip for backlight unit can include the following white-light light emitting chips of one at least, red diodes chip.The green diode chip, with the blue light diode chip.
More than explanation is just illustrative for the utility model, and it is nonrestrictive, those of ordinary skills understand, under the situation of the spirit and scope that do not break away from claim and limited, can make many modifications, variation or equivalence, but but all will fall within the claim restricted portion of the present utility model.
Claims (4)
1. superhigh brightness LED is characterized in that: comprising:
One metab, be one-body molded go out a upper surface, a lower surface, a perforation, with one first electrode, describedly pass through that to prick be to be applied between described upper surface and the described lower surface, described first electrode is to be protruded out downwards by described lower surface one;
One second electrode, include a upper end, with a lower end;
One insulating case, be the described perforation inside that is coated on the described second electrode periphery and is installed in described metab in the lump. the described upper end of described second electrode protrudes out on the described upper surface, and the lower end of described second electrode protrudes out under the described lower surface;
At least one light-emitting diode chip for backlight unit is the described upper surface that sets firmly and be electrically connected described metab, and is electrically connected to the described upper end of described second electrode with at least one gold thread; And
One case for packaging is the periphery that wrapper overlays on described metab and described at least one light-emitting diode chip for backlight unit, and exposes outside the lower end of described first electrode and described second electrode.
2. super brightness light-emittingdiode according to claim 1 is characterized in that: described metab is by the moulding of copper metal integrated punching.
3. super brightness light-emittingdiode according to claim 1 is characterized in that: described metab more includes an external annulus, and it is to be installed in described upper surface outer peripheral edges and to extend upward.
4. super brightness light-emittingdiode according to claim 3 is characterized in that: described external annulus is outward-dipping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201315283U CN200965887Y (en) | 2006-08-21 | 2006-08-21 | Ultrahigh brightness light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006201315283U CN200965887Y (en) | 2006-08-21 | 2006-08-21 | Ultrahigh brightness light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN200965887Y true CN200965887Y (en) | 2007-10-24 |
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ID=38869906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006201315283U Expired - Fee Related CN200965887Y (en) | 2006-08-21 | 2006-08-21 | Ultrahigh brightness light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN200965887Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521253B (en) * | 2008-02-29 | 2011-02-16 | 富士迈半导体精密工业（上海）有限公司 | Solid luminous element and light source module |
| CN101431132B (en) * | 2007-11-07 | 2012-04-25 | 光宝科技股份有限公司 | Luminous diode |
| CN102956761A (en) * | 2011-08-25 | 2013-03-06 | 展晶科技(深圳)有限公司 | Method for packaging light emitting diode |
-
2006
- 2006-08-21 CN CNU2006201315283U patent/CN200965887Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431132B (en) * | 2007-11-07 | 2012-04-25 | 光宝科技股份有限公司 | Luminous diode |
| CN101521253B (en) * | 2008-02-29 | 2011-02-16 | 富士迈半导体精密工业（上海）有限公司 | Solid luminous element and light source module |
| US7893444B2 (en) | 2008-02-29 | 2011-02-22 | Foxsemicon Integrated Technology, Inc. | Light emitting diode and light source module having same |
| CN102956761A (en) * | 2011-08-25 | 2013-03-06 | 展晶科技(深圳)有限公司 | Method for packaging light emitting diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071024 Termination date: 20110821 |