CN100421269C - Packaging device for LED in low thermal resistance - Google Patents
Packaging device for LED in low thermal resistance Download PDFInfo
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- CN100421269C CN100421269C CNB200510026441XA CN200510026441A CN100421269C CN 100421269 C CN100421269 C CN 100421269C CN B200510026441X A CNB200510026441X A CN B200510026441XA CN 200510026441 A CN200510026441 A CN 200510026441A CN 100421269 C CN100421269 C CN 100421269C
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- emitting diode
- lead frame
- light
- thermal resistance
- low thermal
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 230000005855 radiation Effects 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 31
- 239000011810 insulating material Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000741 silica gel Substances 0.000 claims description 13
- 229910002027 silica gel Inorganic materials 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000004809 Teflon Substances 0.000 claims description 4
- 229920006362 Teflon® Polymers 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004033 plastic Substances 0.000 abstract description 12
- 229920003023 plastic Polymers 0.000 abstract description 12
- 230000035699 permeability Effects 0.000 abstract 1
- 239000007779 soft material Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The present invention discloses a packaging device for an LED in low thermal resistance, which comprises an LED converting electrical energy to electromagnetic waves and a reflecting plate formed by a plastic shell, wherein a set of conducting wire racks conducts the LED and an external power supply, and a set of conducting wire racks is used for serving as a heat radiation interface of the LED simultaneously; soft materials of high light permeability are filled in the plastic shell, and a lens is arranged above the plastic shell. The packaging device for an LED of the present invention has the advantages of low thermal resistance, simple fabricating, smaller thickness, thinness and small size.
Description
Technical field
The present invention relates to a kind of encapsulation device of light emitting diode, relate in particular to a kind of encapsulation device of light emitting diode with low thermal resistance.
Background technology
Below enumerate two kinds of two kinds of common in prior art encapsulation device of light emitting diode.As shown in Figure 1, traditional encapsulation device of light emitting diode, light-emitting diode chip for backlight unit 10 is placed in the groove on the conductive metal frames 11, the function of this groove is as the reflection of light face, and use gold thread 14 that this light-emitting diode chip for backlight unit 10 is connected on another utmost point conductive metal frames to form path, this light-emitting diode chip for backlight unit 10 and conductive metal frames 11 are coated by transparent epoxy resin 12, and only appear two pins.This kind encapsulation device of light emitting diode is by extensive and a large amount of indicator lights that is used in light-emitting diode traffic sign lamp, automobile the 3rd stop lamp and electronic product.
As shown in Figure 2, the encapsulation device of light emitting diode that another is widely used, light-emitting diode chip for backlight unit 10 is placed on the printed substrate 13, and make this electrode of light emitting diode be connected in the both positive and negative polarity of printed substrate with gold thread or aluminum steel 14, the outside covers the good epoxy resin 12 of light transmission, can also add fluorescent material to produce white light in epoxy resin.
The shortcoming of above-mentioned two kinds of encapsulation device of light emitting diode is that chip is too high to the thermal resistance value of pin.Because chip is the thermal source of this device, when heat radiation is not enough, can cause the temperature of chip to rise, when temperature is too high, can cause the life-span to shorten, brightness descends, even makes this failure of apparatus, so heat dissipation design is one of an encapsulation device of light emitting diode very important parameters.
Generally speaking, the heat dissipation characteristics of encapsulation device of light emitting diode is determined by thermal resistance value.Because light-emitting diode chip for backlight unit is unique thermal source of encapsulation device of light emitting diode, and pin is a heat dissipation path, so define the heat dissipation characteristics of this encapsulation device of light emitting diode usually to the thermal resistance value of its pin with the P-N composition surface of light-emitting diode chip for backlight unit, represent it with R θ J-P, the thermal resistance of expression from the composition surface to the pin, can mathematical expression represent:
RθJ-P＝(TJ-TP)/Q
TJ: the temperature on light-emitting diode chip for backlight unit composition surface;
TP: the temperature of encapsulation device of light emitting diode pin;
Q: the heat flux that passes the path by this heat.
Because light-emitting diode chip for backlight unit is unique thermal source of encapsulation device of light emitting diode, and the electric energy that it passes through is except that small part converts the dissipation of electromagnetic wave kenel to, most of energy all converts heat energy to,, therefore above-mentioned mathematical expression can be expressed as again to be passed to the heat energy of pin via this device when simply by the electric energy representative of this light-emitting diode chip for backlight unit is required:
RθJ-P＝(TJ-TP)/(If×Vf)
If: the operating current of light-emitting diode chip for backlight unit;
Vf: the operating voltage of light-emitting diode chip for backlight unit.
Because the pin temperature is the parameter of system, this parameter value is by the heat dissipation characteristics decision of this system, and under certain heat flux, this parameter value is a fixed value after system is fixing, and is irrelevant with the heat dissipation characteristics of encapsulation device of light emitting diode.Can be learnt by above-mentioned mathematical notation formula: when the thermal resistance value of encapsulation device of light emitting diode heals when high, its chip P-N composition surface temperature is also higher.
On the other hand, learn from heat conduction that the thermal resistance that thermally conductive heat passes can simply be expressed as:
Rθ＝L/K×A
L: the length of heat conduction path;
K: the coefficient of heat conduction of heat-conducting substance;
A: the normal section of heat conduction path is long-pending.
Can learn thus, when the heat radiation distance of encapsulation device of light emitting diode sectional area longer, this path is healed the coefficient of heat conduction of little and this material when lower, the thermal resistance of this device is just bigger, just must make its heat dissipation path shorter better so design the encapsulation device of light emitting diode of low thermal resistance, increase its area of dissipation and select the high material of the coefficient of heat conduction for use.
And the main heat dissipation path of the encapsulation device of light emitting diode in the above-mentioned prior art is through support or printed substrate heat radiation from chip, the material of the printed substrate in the encapsulation device of light emitting diode of the pairing prior art of Fig. 2 mostly is the plastics class, its coefficient of heat conduction is mostly very low, so can't directly dispel the heat through the ground of printed substrate, and the copper facing line thicknesses on the printed substrate has only tens of extremely hundreds of um more, and its heat radiation sectional area is too little.The thermal resistance value of this design is very big, and is general many between 500-1000K/W, when using power high slightly, is easy to cause light-emitting diode chip for backlight unit overheated.And the encapsulation device of light emitting diode of the pairing prior art of Fig. 1 is heat dissipation path with the support, the material of this support is copper material or iron material mostly, heat dissipation characteristics is rather good, but its sectional area is still too little, so its thermal resistance is approximately between the 150-250K/W, the magnitude of current that this device can be loaded is only about 30mA.
Be head it off, the problem at above-mentioned technology heat radiation sectional area deficiency in the prior art makes improvements.As shown in Figure 3, adopt the mode that increases pin that its pin area is increased, can effectively reduce its thermal resistance so really, but the heat dissipation path of this device is still very long, so its thermal resistance value is up to 50-75K/W.
After this further invent as shown in Figure 4, as U.S. Pat 6,274,924.Use one to be insulated the lead frame 11B that material 15 coats, leave the cave, chamber in the middle of this insulating material, and insert the hot terminal member 16 of extra increase from this cave, chamber, light-emitting diode chip for backlight unit 10 is fixed on a carrier 17 again and is fixed in again on this hot terminal member, and connect its circuit to the both positive and negative polarity lead frame with gold thread.This invention can effectively reduce heat conduction path length, increase the heat conduction sectional area owing to use the extra hot terminal member that increases, thereby the thermal resistance that can reduce this encapsulation device of light emitting diode is to 10-15K/W.But from making angle, the hot terminal member that adds has increased the complexity of making, and has also increased the engineering step, and has increased the whole height of this encapsulation device of light emitting diode.
Summary of the invention
Technical problem to be solved by this invention provides a kind of encapsulation device of light emitting diode of low thermal resistance, and thermal resistance is low, makes simply, and device thickness is less, and that can make is compact.
For solving the problems of the technologies described above; the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention comprises the conductive metal frames of thickness unanimity; this lead frame is with etching; etch partially or die stamping mode is divided into the positive wire support; cathode conductor support and chip bearing support; the bottom of wire support is all in the same plane; insulator fixing cord frame also forms crystal bonding area; the upper end of chip bearing support is exposed to crystal bonding area; the lower end is exposed to outside the insulator; light-emitting diode chip for backlight unit places on the chip bearing support and uses high conductivity material with its set thereon; the anodal weld pad of this light-emitting diode chip for backlight unit is connected with the positive wire support by bonding wire; the negative pole weld pad of light-emitting diode chip for backlight unit also is connected with the cathode conductor support by bonding wire, and the high light transmittance material places in the crystal bonding area in order to cover above-mentioned light-emitting diode chip for backlight unit and to protect bonding wire.
The encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention can also be to be provided with optical lens on the material of this high light transmittance in addition, the material that these lens adopted can be the combination of epoxy resin, silica gel, glass, Teflon or above-mentioned material, or other meets the material that light transmission requires, these lens can reduce inner full-reflection light and improve brightness, and can reach the purpose that changes bright dipping light type according to its optical design, to meet different optical demands.
For solving the problems of the technologies described above, the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention can also be to use the light-emitting diode chip for backlight unit more than a slice, light-emitting diode chip for backlight unit can be homochromy optical chip or heterochromatic optical chip, and its circuit structure can be series, parallel or common the moon (sun).
The encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention can also be to comprise conductive metal frames, this lead frame is split into mutual disjunct positive wire frame, cathode lead frame and chip bearing lead frame, and the front of these three lead frames at grade, and reverse side also at grade; Insulating material connects three of above-mentioned lead frame and forms crystal bonding area, and the upper end of described chip bearing lead frame is exposed in the crystal bonding area of this insulating material, and the lower end is exposed to outside this insulating material; Single or multiple light-emitting diode chip for backlight unit, and wherein having at least a light-emitting diode chip for backlight unit use to cover crystal type is fixed on time carrier, be bonded to again on the chip bearing lead frame, and be electrically connected to positive wire frame and cathode lead frame, on the described light-emitting diode chip for backlight unit, be coated with refractive index greater than 1.3, light transmission is greater than 70% translucent material.
The encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention can also be to comprise that former material is less than 1.5mm thickness even metal lead frame, this lead frame is divided into disjunct positive wire frame and cathode lead frame, and the front of these two lead frames at grade, and reverse side also at grade; Insulating material, to connect above-mentioned lead frame and to form crystal bonding area, single or multiple light-emitting diode chip for backlight unit, and wherein have at least a light-emitting diode chip for backlight unit to use the coefficient of heat conduction to be bonded on the lead frame of above-mentioned crystal bonding area greater than the material of 1W/m-K, this lead frame can be positive wire frame or cathode lead frame but its lead frame back side in the crystal bonding area part is exposed to outside this insulating material; Above-mentioned light-emitting diode chip for backlight unit is electrically connected to positive wire frame and cathode lead frame; Be coated with refractive index greater than 1.3 on the above-mentioned light-emitting diode chip for backlight unit, light transmission is greater than 70% translucent material.
The chip bearing support of the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention is the some of integrated wire frame, so can be integrally formed when making lead frame, thickness is than the reduction greatly of the hot terminal member of prior art use, the hot terminal member that thermal resistance value is also used than prior art lower, and need not additionally to insert, manufacturing process is easy.Though use the chip bearing support to replace the extra heat terminal member, because declining to a great extent in the time of to make the instant igniting light-emitting diode chip for backlight unit of its volume, the temperature rise speed of light-emitting diode chip for backlight unit will be very fast, but the temperature when light-emitting diode chip for backlight unit reaches heat balance only depends on the thermal resistance value of the thermal resistance value of this encapsulation device of light emitting diode and system and irrelevant with temperature rise speed.The encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention can reduce thermal resistance, make manufacture process simple, and volume is less.The brightness that improves encapsulation device of light emitting diode when using a plurality of homochromy optical chips reaches the function of mixed light variable color when using heterochromatic optical chip.
Description of drawings
Below in conjunction with drawings and Examples the present invention is further described:
Fig. 1 is the perforation support rack type encapsulation device of light emitting diode of prior art;
Fig. 2 is the substrate for printed circuit board surface-mounting LED packaging system of prior art;
Fig. 3 is the modified form encapsulation device of light emitting diode of the reduction thermal resistance of prior art;
Fig. 4 is the low thermal resisting LED packaging system of prior art;
Fig. 5 is a kind of embodiment schematic diagram of encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention;
Fig. 6 is a kind of embodiment schematic diagram of encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention;
Fig. 7 is the encapsulation device of light emitting diode RGB mixed light embodiment schematic diagram of a kind of low thermal resistance of the present invention;
Fig. 8 is the encapsulation device of light emitting diode RGB mixed light end view of a kind of low thermal resistance of the present invention;
Fig. 9 is provided with the embodiment schematic diagram of electrostatic protection circuit for the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention.
Wherein, 10 is light-emitting diode chip for backlight unit, and 14 is gold thread, and 15 is plastic insulation, and 18 is the positive pole of support, and 19 is the negative pole of support, and 20 is the chip bearing support, and 21 is silica gel, and 22 is planoconvex spotlight, and 23 is Zener diode.
Embodiment
As shown in Figure 5; the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention; comprise that thickness is that the metallic support of 0.5mm is divided into three with die stamping mode; be respectively positive wire support 18; cathode conductor support 19 and chip bearing support 20; use plastic material 15 fixing above-mentioned three lead frames and form a reflecting surface with injection molding method; wherein the upper end of chip bearing support 20 is exposed to crystal bonding area; the lower end is exposed to outside the plastic body; light-emitting diode chip for backlight unit 10 places on the chip bearing support 20 and uses high conductivity material with its set thereon; the anodal weld pad of this light-emitting diode chip for backlight unit is electrically connected to positive wire support 18 by bonding wire 14; its negative pole weld pad also is electrically connected to cathode conductor support 19 by bonding wire 14 modes; be filled in the crystal bonding area with silica gel 21 and cover this light-emitting diode chip for backlight unit 10 and to protect bonding wire 14, planoconvex spotlight 22 is located on the silica gel.
As shown in Figure 6; the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention; it comprises that thickness is the metallic support of 0.5mm; be divided into three in the mode of etching partially; be respectively positive wire support 28; cathode conductor support 29 and chip bearing support 30; and to etch partially mode local etching support below; simultaneously in half of the dorsal edge place of above-mentioned three supports etched thickness; to strengthen fixing above-mentioned three lead frames of ejection formation plastic material and to form a reflecting surface; wherein the upper end of chip bearing support 30 is exposed to crystal bonding area; the lower end is exposed to outside the plastic body; light-emitting diode chip for backlight unit 10 places on the chip bearing support 30 and uses high conductivity material with its set thereon; the anodal weld pad of this light-emitting diode chip for backlight unit is thought conducting by bonding wire 14 and positive wire support 28; its negative pole weld pad also is conducted by bonding wire 14 and cathode conductor support 29; silica gel 21 is filled in the interior covering luminousing diode chip 10 of crystal bonding area and protects bonding wire 14, and planoconvex spotlight 22 is located on the silica gel.
As shown in Figure 6; the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention; its metallic support with above-mentioned 0.5mm thickness is split up into five districts in the mode of etching partially with it; be respectively three independent positive wire supports 48; cathode conductor support 49 and chip bearing support 40; wherein three light-emitting diode chip for backlight unit 10 being provided with of chip bearing support 40 send ruddiness respectively; green glow and blue light; the anodal weld pad of this rgb led dies is conducted by bonding wire 14 and three independent positive wire supports 48; the negative pole weld pad forms negative electricity road altogether by bonding wire 14 and cathode conductor support 49; silica gel 21 is filled in the crystal bonding area; be covered in this light-emitting diode chip for backlight unit 10 and protect bonding wire 14, lens 22 are located on the silica gel.The lateral plan of this embodiment such as Fig. 7, shown in Figure 8.
As shown in Figure 9, the encapsulation device of light emitting diode of a kind of low thermal resistance of the present invention, it comprises that a thickness is the metallic support of 0.5mm, this metallic support is divided into positive wire support 58 and cathode conductor support 59 in the mode of etching partially, simultaneously in half of its thickness of back etched of above-mentioned two stands, to strengthen fixing above-mentioned two lead frames of ejection formation plastic material, this plastic material forms crystal bonding area simultaneously, wherein the upper end of the positive wire support 58 of crystal bonding area is exposed to crystal bonding area with carries chips, the lower end is exposed to outside the plastic body, light-emitting diode chip for backlight unit 10 places on the positive wire support 58 of crystal bonding area and uses high conductivity material with its set thereon, the anodal weld pad of this light-emitting diode chip for backlight unit is conducted by bonding wire 14 and positive wire support 58, and its negative pole weld pad also is conducted by bonding wire 14 and cathode conductor support 59.On the positive wire support of crystal bonding area, be provided with P type Zener diode 23, and be conducted, form the electrostatic protection circuit by bonding wire 14 and negative pole support.Silica gel 21 is filled in the crystal bonding area, and covers this light-emitting diode chip for backlight unit 10 and protect bonding wire 14, and planoconvex spotlight 22 is located on the silica gel.
Claims (20)
1. the encapsulation device of light emitting diode of a low thermal resistance is characterized in that, comprising:
Thickness is less than 1.5mm thickness even metal lead frame, this lead frame is split into mutual disjunct positive wire frame, cathode lead frame and chip bearing lead frame, and the front of these three lead frames at grade, and the reverse side of these three lead frames also at grade; And this chip bearing lead frame only is used for carries chips, does not electrically connect with the chip that is carried;
Insulating material, three districts that connect above-mentioned lead frame form crystal bonding area, and wherein the crystal bonding area of this insulating material is exposed in the upper end of chip bearing lead frame, and expose outside this insulating material the lower end, and heat radiation is provided;
Single or multiple light-emitting diode chip for backlight unit, and wherein have at least a light-emitting diode chip for backlight unit to use the coefficient of heat conduction to be bonded on the described chip bearing lead frame greater than the material of 1W/m-K, and conduct described positive wire frame and described cathode lead frame, be coated with refractive index on the light-emitting diode chip for backlight unit greater than 1.3, light transmission is greater than 70% translucent material.
2. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 1, it is characterized in that, described chip bearing lead frame can hold light-emitting diode chip for backlight unit and place in it to etch partially or impact style formation depression, and its thickness is greater than 25% of former lead frame thickness.
3. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 1 is characterized in that, described crystal bonding area top is provided with a light transmission greater than 70% lens.
4. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 3 is characterized in that, the material of described lens is epoxy resin, glass, silica gel, Teflon or its combination.
5. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 1, it is characterized in that this device has more than one positive wire frame or has more than one cathode lead frame or more than one cathode lead frame and more than one positive wire frame.
6. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 1 is characterized in that, this device has the chip bearing lead frame more than.
7. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 1 is characterized in that, is provided with Zener diode as the electrostatic protection circuit.
8. the encapsulation device of light emitting diode of a low thermal resistance is characterized in that, comprising:
Conductive metal frames, this lead frame are split into mutual disjunct positive wire frame, cathode lead frame and chip bearing lead frame, and the front of these three lead frames at grade, and the reverse side of these three lead frames also at grade; And this chip bearing lead frame only is used for carries chips, does not electrically connect with the chip that is carried;
Insulating material connects three of above-mentioned lead frame and forms crystal bonding area, and the upper end of described chip bearing lead frame is exposed in the crystal bonding area of this insulating material, and the lower end is exposed to outside this insulating material, and heat radiation is provided;
Single or multiple light-emitting diode chip for backlight unit, and wherein having at least a light-emitting diode chip for backlight unit use to cover crystal type is fixed on time carrier, be bonded to again on the chip bearing lead frame, and be electrically connected to positive wire frame and cathode lead frame, on the described light-emitting diode chip for backlight unit, be coated with refractive index greater than 1.3, light transmission is greater than 70% translucent material.
9. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 8, it is characterized in that, wherein the chip bearing lead frame can hold light-emitting diode chip for backlight unit and place in it to etch partially or impact style reduces its material thickness, and its thickness is still greater than 25% of former lead frame thickness.
10. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 8 is characterized in that, described crystal bonding area top is provided with a light transmission greater than 70% lens.
11. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 10 is characterized in that, the material of described lens is epoxy resin, glass, silica gel, Teflon or its combination.
12. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 8 is characterized in that, this device has more than one positive wire frame or has more than one cathode lead frame or both and all is.
13. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 8 is characterized in that, described carrier is bonded to positive wire frame or cathode lead frame or simultaneously more than one cathode lead frame and more than one positive wire frame.
14. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 8 is characterized in that, in wherein said a plurality of light-emitting diode chip for backlight unit, is provided with Zener diode as the electrostatic protection circuit.
15. the encapsulation device of light emitting diode of a low thermal resistance is characterized in that, comprising:
Former material is that this lead frame is divided into disjunct positive wire frame and cathode lead frame, and the front of these two lead frames at grade less than 1.5mm thickness even metal lead frame, and the reverse side of these two lead frames also at grade;
Insulating material is to connect above-mentioned lead frame and to form crystal bonding area;
Single or multiple light-emitting diode chip for backlight unit, and wherein have at least a light-emitting diode chip for backlight unit to use the coefficient of heat conduction to be bonded on the lead frame of above-mentioned crystal bonding area greater than the material of 1W/m-K, this lead frame can be positive wire frame or cathode lead frame but its lead frame back side in the crystal bonding area part is exposed to outside this insulating material, and heat radiation is provided;
Above-mentioned light-emitting diode chip for backlight unit is electrically connected to positive wire frame and cathode lead frame;
Be coated with refractive index greater than 1.3 on the above-mentioned light-emitting diode chip for backlight unit, light transmission is greater than 70% translucent material.
16. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 15, it is characterized in that, wherein the lead frame of carries chips to be etching partially or impact style forms depression, and can hold light-emitting diode chip for backlight unit and place in it, and its thickness is greater than 25% of former lead frame thickness.
17. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 15 is characterized in that, described crystal bonding area, and the top is provided with a light transmission greater than 70% lens.
18. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 17 is characterized in that, the material of described lens is epoxy resin, glass, silica gel, Teflon or its combination.
19. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 15, it is characterized in that this device has more than one positive wire frame or has more than one cathode lead frame or more than one cathode lead frame and more than one positive wire frame.
20. the encapsulation device of light emitting diode of a kind of low thermal resistance as claimed in claim 15 is characterized in that, in described a plurality of light-emitting diode chip for backlight unit, is provided with Zener diode as the electrostatic protection circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB200510026441XA CN100421269C (en) | 2005-06-03 | 2005-06-03 | Packaging device for LED in low thermal resistance |
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| CNB200510026441XA CN100421269C (en) | 2005-06-03 | 2005-06-03 | Packaging device for LED in low thermal resistance |
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| CN1874010A CN1874010A (en) | 2006-12-06 |
| CN100421269C true CN100421269C (en) | 2008-09-24 |
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| JP5741439B2 (en) * | 2009-10-01 | 2015-07-01 | 日亜化学工業株式会社 | Light emitting device |
| WO2011123985A1 (en) * | 2010-04-08 | 2011-10-13 | 盈胜科技股份有限公司 | Method for fabricating multilayer light emitting diode array |
| CN101887939A (en) * | 2010-05-24 | 2010-11-17 | 晶科电子（广州）有限公司 | Packaging structure and packaging method for improving LED external quantum efficiency |
| CN102651446B (en) * | 2011-02-25 | 2014-12-10 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) package structure and light source device |
| CN102956761B (en) * | 2011-08-25 | 2015-03-11 | 展晶科技(深圳)有限公司 | Method for packaging light emitting diode |
| CN103474565A (en) * | 2012-06-08 | 2013-12-25 | 赵依军 | Connection of light emitting diode unit and insulation heat conduction substrate |
| CN103579210B (en) * | 2012-07-31 | 2019-01-01 | 赵依军 | The connection of light emitting diode and heat-radiating substrate |
| CN104006323B (en) * | 2014-06-06 | 2016-08-17 | 宁波燎原灯具股份有限公司 | The LED anti-explosion lamp that a kind of Switching Power Supply drives |
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| CN1874010A (en) | 2006-12-06 |
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