CN1981413A - 用于增大光发射器件最大调制速度的方法、增大了最大调制速度的光发射器件及其量子阱结构 - Google Patents

用于增大光发射器件最大调制速度的方法、增大了最大调制速度的光发射器件及其量子阱结构 Download PDF

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Publication number
CN1981413A
CN1981413A CNA2005800228854A CN200580022885A CN1981413A CN 1981413 A CN1981413 A CN 1981413A CN A2005800228854 A CNA2005800228854 A CN A2005800228854A CN 200580022885 A CN200580022885 A CN 200580022885A CN 1981413 A CN1981413 A CN 1981413A
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CN
China
Prior art keywords
quantum well
layer
barrier layer
well structure
ingaas
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Pending
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CNA2005800228854A
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English (en)
Chinese (zh)
Inventor
阿施史·唐顿
迈克尔·R·T·泰恩
英－兰·昌
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Avago Technologies International Sales Pte Ltd
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Avago Technologies Fiber IP Singapore Pte Ltd
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Publication of CN1981413A publication Critical patent/CN1981413A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34386—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers explicitly Al-free

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  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CNA2005800228854A 2004-07-06 2005-06-29 用于增大光发射器件最大调制速度的方法、增大了最大调制速度的光发射器件及其量子阱结构 Pending CN1981413A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/885,952 2004-07-06
US10/885,952 US7269196B2 (en) 2004-07-06 2004-07-06 Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

Publications (1)

Publication Number Publication Date
CN1981413A true CN1981413A (zh) 2007-06-13

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CNA2005800228854A Pending CN1981413A (zh) 2004-07-06 2005-06-29 用于增大光发射器件最大调制速度的方法、增大了最大调制速度的光发射器件及其量子阱结构

Country Status (6)

Country Link
US (1) US7269196B2 (de)
JP (1) JP5202944B2 (de)
CN (1) CN1981413A (de)
DE (1) DE112005001569B4 (de)
TW (1) TWI368369B (de)
WO (1) WO2006014308A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103563190A (zh) * 2011-03-17 2014-02-05 菲尼萨公司 陷阱减少的具有高铟低铝量子阱和高铝低铟势垒层的激光器
CN114361941A (zh) * 2022-03-18 2022-04-15 常州纵慧芯光半导体科技有限公司 一种垂直腔边发射激光器

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1906496B1 (de) * 2006-09-29 2010-01-06 OSRAM Opto Semiconductors GmbH Halbleiterlaser und Verfahren zur Herstellung eines solchen
JP2012119585A (ja) * 2010-12-02 2012-06-21 Showa Denko Kk 発光ダイオード、発光ダイオードランプ及び照明装置
TWI502757B (zh) * 2013-03-07 2015-10-01 Nat Univ Chung Hsing Coupled with indium gallium arsenide quantum dotted in the well of the solar cell
US11093667B2 (en) * 2017-05-22 2021-08-17 Purdue Research Foundation Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells
KR20200049026A (ko) * 2018-10-31 2020-05-08 엘지이노텍 주식회사 표면발광 레이저소자 및 이를 포함하는 발광장치
CN112398001B (zh) * 2020-10-10 2022-04-05 华芯半导体研究院(北京)有限公司 新型复合量子阱结构的vcsel芯片结构及制备方法

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US5461637A (en) * 1994-03-16 1995-10-24 Micracor, Inc. High brightness, vertical cavity semiconductor lasers
JPH0856045A (ja) * 1994-08-11 1996-02-27 Hitachi Ltd 半導体レーザ装置
JP3470282B2 (ja) * 1995-02-27 2003-11-25 富士通株式会社 面発光半導体レーザとその製造方法
JPH0945985A (ja) * 1995-07-27 1997-02-14 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP3428797B2 (ja) * 1996-02-08 2003-07-22 古河電気工業株式会社 半導体レーザ素子
US6229153B1 (en) * 1996-06-21 2001-05-08 Wisconsin Alumni Research Corporation High peak current density resonant tunneling diode
JPH1084158A (ja) * 1996-09-06 1998-03-31 Hitachi Ltd 半導体レーザ装置
US5719894A (en) * 1996-09-25 1998-02-17 Picolight Incorporated Extended wavelength strained layer lasers having nitrogen disposed therein
JP2933051B2 (ja) * 1997-03-21 1999-08-09 日本電気株式会社 多重量子井戸構造光半導体装置およびその製造方法
US7072373B2 (en) * 1998-11-30 2006-07-04 The Furukawa Electric Co., Ltd. Ridge waveguide semiconductor laser diode
US6973109B2 (en) * 2000-02-28 2005-12-06 Fuji Photo Film Co., Ltd. Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer
US6816525B2 (en) * 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
US6782027B2 (en) * 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103563190A (zh) * 2011-03-17 2014-02-05 菲尼萨公司 陷阱减少的具有高铟低铝量子阱和高铝低铟势垒层的激光器
CN114361941A (zh) * 2022-03-18 2022-04-15 常州纵慧芯光半导体科技有限公司 一种垂直腔边发射激光器

Also Published As

Publication number Publication date
US7269196B2 (en) 2007-09-11
JP2008506257A (ja) 2008-02-28
US20060007974A1 (en) 2006-01-12
DE112005001569B4 (de) 2010-06-17
DE112005001569T5 (de) 2007-09-06
TW200625741A (en) 2006-07-16
WO2006014308A1 (en) 2006-02-09
TWI368369B (en) 2012-07-11
JP5202944B2 (ja) 2013-06-05

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