TWI368369B - Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof - Google Patents
Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereofInfo
- Publication number
- TWI368369B TWI368369B TW094122687A TW94122687A TWI368369B TW I368369 B TWI368369 B TW I368369B TW 094122687 A TW094122687 A TW 094122687A TW 94122687 A TW94122687 A TW 94122687A TW I368369 B TWI368369 B TW I368369B
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting device
- maximum modulation
- modulation speed
- quantum well
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34353—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on (AI)GaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34386—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers explicitly Al-free
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/885,952 US7269196B2 (en) | 2004-07-06 | 2004-07-06 | Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200625741A TW200625741A (en) | 2006-07-16 |
TWI368369B true TWI368369B (en) | 2012-07-11 |
Family
ID=35541323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094122687A TWI368369B (en) | 2004-07-06 | 2005-07-05 | Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof |
Country Status (6)
Country | Link |
---|---|
US (1) | US7269196B2 (zh) |
JP (1) | JP5202944B2 (zh) |
CN (1) | CN1981413A (zh) |
DE (1) | DE112005001569B4 (zh) |
TW (1) | TWI368369B (zh) |
WO (1) | WO2006014308A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI502757B (zh) * | 2013-03-07 | 2015-10-01 | Nat Univ Chung Hsing | Coupled with indium gallium arsenide quantum dotted in the well of the solar cell |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1906496B1 (de) * | 2006-09-29 | 2010-01-06 | OSRAM Opto Semiconductors GmbH | Halbleiterlaser und Verfahren zur Herstellung eines solchen |
JP2012119585A (ja) * | 2010-12-02 | 2012-06-21 | Showa Denko Kk | 発光ダイオード、発光ダイオードランプ及び照明装置 |
US8837547B2 (en) * | 2011-03-17 | 2014-09-16 | Finisar Corporation | Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition |
US11093667B2 (en) * | 2017-05-22 | 2021-08-17 | Purdue Research Foundation | Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells |
KR20200049026A (ko) * | 2018-10-31 | 2020-05-08 | 엘지이노텍 주식회사 | 표면발광 레이저소자 및 이를 포함하는 발광장치 |
CN112398001B (zh) * | 2020-10-10 | 2022-04-05 | 华芯半导体研究院(北京)有限公司 | 新型复合量子阱结构的vcsel芯片结构及制备方法 |
CN114361941B (zh) * | 2022-03-18 | 2022-06-17 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔边发射激光器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461637A (en) * | 1994-03-16 | 1995-10-24 | Micracor, Inc. | High brightness, vertical cavity semiconductor lasers |
JPH0856045A (ja) * | 1994-08-11 | 1996-02-27 | Hitachi Ltd | 半導体レーザ装置 |
JP3470282B2 (ja) * | 1995-02-27 | 2003-11-25 | 富士通株式会社 | 面発光半導体レーザとその製造方法 |
JPH0945985A (ja) * | 1995-07-27 | 1997-02-14 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
JP3428797B2 (ja) * | 1996-02-08 | 2003-07-22 | 古河電気工業株式会社 | 半導体レーザ素子 |
US6229153B1 (en) | 1996-06-21 | 2001-05-08 | Wisconsin Alumni Research Corporation | High peak current density resonant tunneling diode |
JPH1084158A (ja) * | 1996-09-06 | 1998-03-31 | Hitachi Ltd | 半導体レーザ装置 |
US5719894A (en) * | 1996-09-25 | 1998-02-17 | Picolight Incorporated | Extended wavelength strained layer lasers having nitrogen disposed therein |
JP2933051B2 (ja) * | 1997-03-21 | 1999-08-09 | 日本電気株式会社 | 多重量子井戸構造光半導体装置およびその製造方法 |
US7072373B2 (en) | 1998-11-30 | 2006-07-04 | The Furukawa Electric Co., Ltd. | Ridge waveguide semiconductor laser diode |
US6973109B2 (en) | 2000-02-28 | 2005-12-06 | Fuji Photo Film Co., Ltd. | Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer |
US6816525B2 (en) * | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
US6782027B2 (en) | 2000-12-29 | 2004-08-24 | Finisar Corporation | Resonant reflector for use with optoelectronic devices |
-
2004
- 2004-07-06 US US10/885,952 patent/US7269196B2/en not_active Expired - Fee Related
-
2005
- 2005-06-29 DE DE112005001569T patent/DE112005001569B4/de not_active Expired - Fee Related
- 2005-06-29 JP JP2007520378A patent/JP5202944B2/ja not_active Expired - Fee Related
- 2005-06-29 WO PCT/US2005/023292 patent/WO2006014308A1/en active Application Filing
- 2005-06-29 CN CNA2005800228854A patent/CN1981413A/zh active Pending
- 2005-07-05 TW TW094122687A patent/TWI368369B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI502757B (zh) * | 2013-03-07 | 2015-10-01 | Nat Univ Chung Hsing | Coupled with indium gallium arsenide quantum dotted in the well of the solar cell |
Also Published As
Publication number | Publication date |
---|---|
DE112005001569B4 (de) | 2010-06-17 |
JP2008506257A (ja) | 2008-02-28 |
JP5202944B2 (ja) | 2013-06-05 |
TW200625741A (en) | 2006-07-16 |
CN1981413A (zh) | 2007-06-13 |
US20060007974A1 (en) | 2006-01-12 |
DE112005001569T5 (de) | 2007-09-06 |
WO2006014308A1 (en) | 2006-02-09 |
US7269196B2 (en) | 2007-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |