CN1953097A - 半导体存储器器件 - Google Patents
半导体存储器器件 Download PDFInfo
- Publication number
- CN1953097A CN1953097A CNA2006100073008A CN200610007300A CN1953097A CN 1953097 A CN1953097 A CN 1953097A CN A2006100073008 A CNA2006100073008 A CN A2006100073008A CN 200610007300 A CN200610007300 A CN 200610007300A CN 1953097 A CN1953097 A CN 1953097A
- Authority
- CN
- China
- Prior art keywords
- signal
- circuit
- deactivation
- output
- control circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000004913 activation Effects 0.000 claims abstract description 55
- 230000009849 deactivation Effects 0.000 claims abstract description 51
- 230000004044 response Effects 0.000 claims abstract description 24
- 230000006870 function Effects 0.000 claims description 7
- 230000000630 rising effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- XJCLWVXTCRQIDI-UHFFFAOYSA-N Sulfallate Chemical compound CCN(CC)C(=S)SCC(Cl)=C XJCLWVXTCRQIDI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
- G11C7/1027—Static column decode serial bit line access mode, i.e. using an enabled row address stroke pulse with its associated word line address and a sequence of enabled bit line addresses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005306233 | 2005-10-20 | ||
JP2005306233A JP4750526B2 (ja) | 2005-10-20 | 2005-10-20 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1953097A true CN1953097A (zh) | 2007-04-25 |
CN100541658C CN100541658C (zh) | 2009-09-16 |
Family
ID=37770865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100073008A Expired - Fee Related CN100541658C (zh) | 2005-10-20 | 2006-02-16 | 半导体存储器器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7254090B2 (zh) |
EP (1) | EP1783775B1 (zh) |
JP (1) | JP4750526B2 (zh) |
KR (1) | KR100688274B1 (zh) |
CN (1) | CN100541658C (zh) |
DE (1) | DE602006003509D1 (zh) |
TW (1) | TWI313004B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4325685B2 (ja) * | 2007-02-21 | 2009-09-02 | セイコーエプソン株式会社 | メモリを制御するメモリコントローラ、メモリモジュール、メモリの制御方法、および、コンピュータ。 |
JP5029205B2 (ja) * | 2007-08-10 | 2012-09-19 | 富士通セミコンダクター株式会社 | 半導体メモリ、半導体メモリのテスト方法およびシステム |
KR102561095B1 (ko) * | 2016-04-14 | 2023-07-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치의 동작 방법 |
KR102663804B1 (ko) * | 2016-11-30 | 2024-05-07 | 에스케이하이닉스 주식회사 | 반도체장치 |
US10210923B2 (en) | 2017-07-12 | 2019-02-19 | International Business Machines Corporation | Activation of memory core circuits in an integrated circuit |
USD929307S1 (en) | 2019-01-07 | 2021-08-31 | Fredrick R. Brown | Table integrated with a tailgate cover |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000207882A (ja) | 1999-01-14 | 2000-07-28 | Nec Eng Ltd | シンクロナスdram |
JP4121690B2 (ja) * | 2000-05-29 | 2008-07-23 | 富士通株式会社 | 半導体記憶装置 |
JP2002352576A (ja) | 2001-05-24 | 2002-12-06 | Nec Corp | 半導体記憶装置 |
JP2004259318A (ja) * | 2003-02-24 | 2004-09-16 | Renesas Technology Corp | 同期型半導体記憶装置 |
JP4241087B2 (ja) | 2003-02-27 | 2009-03-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置 |
KR100620645B1 (ko) * | 2004-04-13 | 2006-09-13 | 주식회사 하이닉스반도체 | 동기 및 비동기 병용 모드 레지스터 세트를 포함하는psram |
JP4615896B2 (ja) * | 2004-05-25 | 2011-01-19 | 富士通セミコンダクター株式会社 | 半導体記憶装置および該半導体記憶装置の制御方法 |
JP4620504B2 (ja) * | 2005-03-10 | 2011-01-26 | 富士通セミコンダクター株式会社 | 半導体メモリおよびシステム装置 |
-
2005
- 2005-10-20 JP JP2005306233A patent/JP4750526B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-26 TW TW095103063A patent/TWI313004B/zh not_active IP Right Cessation
- 2006-01-27 US US11/340,471 patent/US7254090B2/en not_active Expired - Fee Related
- 2006-01-27 DE DE602006003509T patent/DE602006003509D1/de active Active
- 2006-01-27 EP EP06100948A patent/EP1783775B1/en not_active Expired - Fee Related
- 2006-02-13 KR KR1020060013418A patent/KR100688274B1/ko not_active IP Right Cessation
- 2006-02-16 CN CNB2006100073008A patent/CN100541658C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7254090B2 (en) | 2007-08-07 |
TW200717520A (en) | 2007-05-01 |
US20070091715A1 (en) | 2007-04-26 |
EP1783775A3 (en) | 2007-05-16 |
EP1783775A2 (en) | 2007-05-09 |
JP4750526B2 (ja) | 2011-08-17 |
DE602006003509D1 (de) | 2008-12-18 |
CN100541658C (zh) | 2009-09-16 |
KR100688274B1 (ko) | 2007-03-02 |
TWI313004B (en) | 2009-08-01 |
EP1783775B1 (en) | 2008-11-05 |
JP2007115344A (ja) | 2007-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081024 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081024 Address after: Tokyo, Japan, Japan Applicant after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTORS CO., LTD Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150512 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150512 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090916 Termination date: 20190216 |