CN1949369A - 具有高磁矩耐侵蚀软磁衬层的介质和垂直磁记录系统 - Google Patents
具有高磁矩耐侵蚀软磁衬层的介质和垂直磁记录系统 Download PDFInfo
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Abstract
本发明涉及一种具有软磁衬层(SUL)的垂直磁记录盘，该SUL具有良好的耐侵蚀性以及高磁矩。该SUL的材料是含有Co、Fe、X和Y的合金；其中X是Ta或Nb，Y是Zr或Hf，且所述合金中存在的X和Y的组合量为约10和20原子百分比之间。所述合金中Co与Fe的原子比在约90∶10至10∶90之间，优选地在约25∶75至35∶65之间。该SUL可以是单层SUL或由被层间膜或多个层间膜分隔开的多个软磁层形成的多层SUL。
Description
技术领域
本发明总地涉及垂直磁记录介质，更特别地，涉及具有形成在“软磁”或较低矫顽力导磁衬层(SUL)上的记录层(RL)的“双层”垂直磁记录盘。
背景技术
记录位在记录层中以垂直或离面取向存储的垂直磁记录是在磁记录硬盘驱动器中实现超高记录密度的希望途径之一。普通类型的垂直磁记录系统使用“双层”介质。此类系统以单写极类记录头示于图1中。所述双层介质包括形成在“软磁”或较低矫顽力导磁衬层(SUL)上的垂直磁数据记录层(RL)。SUL用作从记录头的写极到返回极的磁场的磁通返回路径。在图1中，示出RL具有垂直记录或磁化的区域，相邻区域具有相反的磁化方向，如箭头所示。相邻的相反指向的磁化区域之间的磁转变可被读元件或读头作为记录位检测到。
图2是现有技术垂直磁记录盘的示意性剖视图，示出写场Hw作用在记录层RL上。该盘还包括硬盘衬底、用于SUL的生长的粘着层或始层(OL)、用于中断导磁膜SUL与RL之间的磁交换耦合且促进RL的外延生长的非磁交换中断层(EBL)、以及保护涂层(OC)。如图2所示，RL位于“表象(apparent)”记录头(ARH)的间隙内，与纵向或面内记录相比这允许显著更高的写场。ARH包括盘上方是真实写极(RWH)的写极(图1)、以及RL之下的有效次级写极(SWP)。SWP由SUL促成，其通过EBL自RL去耦，并且由于其高的磁导率在写过程期间产生RWH的磁镜像。这有效地使RL在ARH的间隙中且允许在RL内有大的写场Hw。
用于RL的一种类型的材料是颗粒铁磁钴合金，例如CoPtCr合金，具有c轴基本离面或垂直于RL取向的六角密堆积(hcp)晶体结构。此颗粒钴合金RL还应具有良好隔离的精细晶粒结构从而产生高矫顽力(Hc)介质且减小颗粒间交换耦合，其是造成高本征介质噪声的原因。因此，RL可包括氧化物，例如Si、Ta和Nb的氧化物，其沉淀到晶粒边界从而增强钴合金RL中的晶粒分离(segregation)。H.Uwazumi等人在“CoptCr-SiO2 GranularMedia for High-Density Perpendicular Recording”，IEEE Transactions onMagnetics，Vol.39，No.4，July 2003，pp.1914-1918中描述了具有带添加的SiO2的CoPtCr颗粒合金RL的垂直磁记录介质。T.Chiba等人在“Structureand magnetic properties of Co-Pt-Ta2O5 film for perpendicular magneticrecording media”，Journal of Magnetism and magnetic Materials，Vol.287，February 2005，pp.167-171中描述了具有带添加的Ta2O5的CoPt颗粒合金RL的垂直磁记录介质。
SUL通常包括高磁矩(Ms)材料，具有在约50nm至400nm范围内的总厚度。SUL的Ms和厚度必须足以避免SUL饱和，SUL饱和将使写性能变差。临界厚度t(SUL)应满足下面的等式：
t(SUL)＝Ms(写头)/2Ms(SUL)×LW(L+W)，
其中L和W分别是写极的长度和宽度。为了在盘上实现更高记录密度，写极将制得较小，这将使SUL的厚度减小。SUL的高Ms对于防止降低记录性能的写场和写场梯度的退化是需要的。然而，SUL材料的高Ms还将减小SUL厚度要求。因为SUL通常由包括Co、Fe和/或Ni的非晶导磁材料形成，其是非常易反应的且当暴露于空气或水时容易形成氧化物和氮化物，所以SUL非常易受侵蚀影响。因此，重要的是SUL不仅具有高Ms，而且耐侵蚀，特别是对于较薄SUL。
CoTaZr和CoNbZr合金是公知的用于SUL的材料。然而，这些高磁矩合金具有差的耐侵蚀性。
需要具有SUL的垂直磁记录介质，该SUL能实现良好的耐侵蚀性和高Ms，从而介质的记录属性不会退化。
发明内容
本发明是具有SUL层或多层的垂直磁记录盘以及包括该盘的垂直磁记录系统，该SUL层或多层具有良好的耐侵蚀性以及高磁矩。该SUL的材料是包括Co、Fe、X和Y的合金；其中X是Ta或Nb，Y是Zr或Hf，合金中存在的X和Y的组合量(combined amount)为约10和20原子百分比。合金中Co和Fe的原子比在约90∶10至10∶90之间，优选在25∶75和35∶65之间。该SUL可以是单层SUL或者通过层间膜或多个层间膜分隔开的多个软磁层形成的多层SUL。
为了更全面地理解本发明的本质和优点，请结合附图参考下面的详细说明。
附图说明
图1是垂直磁记录系统的示意图。
图2是垂直磁记录盘的示意性剖视图，示出写场。
图3是具有反铁磁耦合层叠SUL的垂直磁记录盘的示意性剖视图。
图4是对于不同CoFeTaZr合金和对于Co92Ta3Zr5合金的一组电化学极化曲线。
具体实施方式
现有技术已知的垂直磁记录盘示于图3中。构成盘的各个层位于硬盘衬底上。衬底可以是任何商业可得的玻璃衬底，但是还可以是具有NiP或其它已知表面涂层的常规铝合金，或者是替代的衬底，例如硅、硅碱钙石或硅碳化物。SUL位于衬底上，或者直接在衬底上，或者直接在粘着层或始层(OL)上。OL有利于SUL的生长且可以是AlTi合金或类似材料，具有约2-5纳米(nm)的厚度。
SUL可以是软磁导磁材料的单层。期望的是，SUL表现为软磁属性，且没有畴壁。在该情况下，“软磁”指的是SUL与驱使磁通的面内磁场直接成比例地承载磁通量的能力。为了实现没有畴壁的软磁性，期望的是在静态，即没有记录磁转变和/或写场的情况下，SUL有效地在“单畴状态”，由此SUL中的磁化到处主要沿单个方向排列。SUL中多个畴的存在是介质噪声之源且将导致记录层中所记录的信息的增强热退磁的局部区域。为了解决此问题，已经提出了层叠的多层SUL。图3所示的SUL是由多个软磁层(SULa和SULb)形成的层叠或多层SUL，所述多个软磁层通过用作反铁磁(AF)耦合膜从而作为SULa和SULb之间的反铁磁交换耦合的媒介的层间膜(例如Ru、Ir或Cr)分隔开。图3中SULa和SULb中的箭头表示静止状态下的反平行磁化方向。此类SUL描述于美国专利6686070B1和6835475B2中。该SUL还可以是由通过非磁膜分隔开的多个软磁膜形成的层叠或多层SUL，所述非磁膜例如为碳或SiN的膜或者Al或CoCr的导电膜。单层SUL和层叠SUL中各软磁层通常由包括Co、Fe和/或Ni的非晶导磁合金形成，例如CoTaZr和CoNbZr。该SUL的厚度通常在约50-400nm的范围内。在不久的将来，随着每代产品中写极尺寸持续按比例缩小，SUL在厚度上将下降到50nm以下。
SUL上的非磁EBL是具有六角密堆积(hcp)晶体结构的非磁金属或合金，用于控制颗粒RL中的hcp晶体取向。该EBL促进hcp颗粒RL的生长，使得其c轴基本垂直地取向，由此产生垂直磁各向异性。钌(Ru)是用于EBL的一般使用的材料，但是其它材料包括选自Ti、Re和Os的金属以及含有选自Ti、Re、Ru和Os的至少一种元素的合金，包括Ru基合金。如果Ru用作EBL，它可以直接形成在籽层(SL)上，所述籽层形成于SUL上。
RL是具有颗粒间材料的颗粒铁磁Co合金，该颗粒间材料由一种或更多添加的分离子(segregant)的一种或更多氧化物构成。优选地颗粒间材料中的氧化物或多种氧化物是仅一种元素的氧化物或多种氧化物，即Si-Ox、Ti-Ox或Ta-Ox。RL还可以含有Cr，Cr的一种或多种氧化物还作为颗粒间材料存在。因此一般的RL成分将包括CoPtCr-SiO2、CoptCr-TiO2和CoPt-Ta2O5。
形成在RL上的OC可以是非晶“类金刚石”碳膜或其它公知保护涂层，例如氮化硅。
用作SUL的CoTaZr和CoNbZr合金的一般成分非常易受侵蚀影响。这已经利用光学显微镜和透射电子显微镜(TEM)通过具有由Co92Ta3Zr5(其中下标表示原子百分比)形成的SUL的垂直磁记录盘的检验得到证实。利用蔡司光学显微镜在500X下SUL的检验显示草酸钴(cobalt oxalate)杆状物均匀分布在暴露下面的SUL的膜缺陷周围。在垂直磁记录盘中，草酸Co(CoC2O4)是侵蚀产物，经常以杆状物或针状物的形式存在。它们通常约1-2μm长且直径在0.1μm左右。由于缺乏SUL的钝化和Co离子的高迁移率，尤其是在由于更多不活泼材料(noble material)例如碳涂层而存在电耦合(galvanic coupling)时，Co离子向上渗透且与周围环境中的草酸反应从而形成杆状草酸Co。另外，剖视TEM清楚地显示下面的SUL层从缺陷中心的氧化。这些结果表明Co92Ta3Zr5合金中的Ta和Zr含量不足以钝化侵蚀。
增大CoTaZr SUL中Ta和Zr的量从而确定是否可得到侵蚀的钝化。侵蚀检测表明Co85Ta10Zr5 SUL具有足够的耐侵蚀性。然而，虽然Co85Ta10Zr5合金具有足够的耐侵蚀性，但是其Ms比Co92Ta3Zr5合金的Ms小约25％。Ms的减小会由于写场和写场梯度的退化而导致记录性能的损失。
本发明是具有SUL层或多层的垂直磁记录盘，该SUL层或多层具有良好的耐侵蚀性以及高磁矩。SUL的材料是含Co、Fe、X和Y的合金；其中X是Ta或Nb，Y是Zr或Hf，合金中存在的X和Y的组合量为约10和20原子百分比之间。合金中Co和Fe的原子比为约90∶10至10∶90之间，优选地约25∶75和35∶65之间。
对于耐侵蚀性和磁矩，检验了具有不同CoFeTaZr合金成分的SUL。图4是不同CoFeTaZr合金和Co92Ta3Zr5合金的电化学极化曲线的比较。这些曲线的数据在实验配置中获得，在该实验配置中，SUL形成在玻璃衬底上，SUL用作一个电极。然后铂(Pt)电极置于SUL上方1mm且水滴沉积在Pt电极与SUL之间。然后所施加的电压从-1.0V至+1.0V扫描且测量电流作为所施加电压的函数。在图4中，在约-0.4V处的负尖峰表明从阴极区到阳极区的转变，该处SUL变为阳极。随着电压正地增加，电子从SSUL中引出。阳极区中所测量电流的值表明SUL的侵蚀可能性。如图4所示，Co92Ta3Zr5的交换电流(exchange current)最高。Co92Ta3Zr5合金的极化曲线迅速上升且仅由于该合金已经被如此严重地侵蚀使得检测电极已经被严重腐蚀时开始下降。其它三种合金(Co34Fe51Ta10Zr5、Co51Fe34Ta10Zr5和Co59Fe26Ta10Zr5)全都显示出显著更低的交换电流水平。在零电势，Co92Ta3Zr5合金的交换电流为约50×10-6A，相比之下，Co34Fe51Ta10Zr5、Co51Fe34Ta10Zr5和Co59Fe26Ta10Zr5合金分别为2×10-6A、3×10-6A和1×10-6A。因此本发明的合金具有约15至50倍的耐侵蚀性。
为了检测膜对侵蚀的敏感性，控制膜Co92Ta3Zr5和利用各种(CoFe)Ta10Zr5 SUL合金制成的膜经历严重的凝露试验(condensation test)，包括在高湿度(99％)下暴露于升高的温度(65℃)四天。控制膜(Co92Ta3Zr5)上饰有侵蚀斑点，表明具有草酸Co杆状物的缺陷。然而(CoFe)Ta10Zr5膜未显示任何侵蚀斑点。该结果验证了本发明的SUL合金的所测量的电化学极化曲线和改善的耐侵蚀性。
两种(CoFe)Ta10Zr5 SUL合金的Ms分别测量为在11kOe和12kOe，其仅稍微小于Co92Ta3Zr5控制合金的13kOe。新SUL合金中Co与Fe的原子比为约90∶10至10∶90之间，从而实现所需Ms。Ms还可以通过优化Co∶Fe原子比至30∶70(约25∶75和35∶65之间)附近来得到进一步提高，根据公知的斯莱特-鲍林曲线(Slater-Pauling曲线)，其产生最大Ms。另外，如果侵蚀检测表明(CoFe)Ta10Zr5 SUL合金的耐侵蚀性超过了产品规格，Ms还可以通过减小Ta和/或Zr含量来进一步优化。合金中Ta和Zr的组合量优选在约10和20原子百分比之间。
虽然已经如上所述展示了本发明的具有Ta和Zr的CoFeXY SUL合金，但是Nb可以替代Ta，且/或者Hf可以替代Zr。
虽然参照优选实施例特别显示和描述了本发明，但是本领域技术人员将理解，在不偏离本发明的思想和范围的情况下，可以进行形式和细节上的各种改变。因此，所公开的发明应仅被理解为示例性的，且局限于仅由所附权利要求定义的范围。
Claims (17)
1.一种垂直磁记录介质，包括：
衬底；
垂直磁记录层；以及
在该衬底与该记录层之间包括导磁材料的衬层，该导磁材料是包括Co、Fe、元素X和元素Y的合金，其中X是Ta或Nb，Y是Zr或Hf。
2.如权利要求1所述的介质，其中所述合金中X和Y的组合量为约10和20原子百分比之间。
3.如权利要求1所述的介质，其中所述合金中的Co与所述合金中的Fe的原子比在约90∶10至10∶90的范围。
4.如权利要求3所述的介质，其中所述合金中的Co与所述合金中的Fe的原子比在约25∶75至35∶65的范围。
5.如权利要求1所述的介质，还包括在该衬层与该记录层之间用于磁去耦该记录层与该衬层的交换中断层。
6.如权利要求1所述的介质，其中该记录层包括颗粒铁磁Co合金。
7.如权利要求6所述的介质，其中该记录层包括选自包括Si、Ta、Ti和Nb的组的一种或更多种元素的氧化物或多种氧化物。
8.如权利要求1所述的介质，其中该衬层包括通过非磁膜分隔开的所述导磁材料的两层膜。
9.如权利要求8所述的介质，其中该非磁膜提供所述两层导磁膜的反铁磁耦合。
10.一种垂直磁记录系统，包括：
权利要求1的所述介质；
写头，用于磁化所述介质的该记录层的区域；以及
读头，用于检测所述被磁化的区域之间的转变。
11.一种垂直磁记录盘，包括：
衬底；
导磁衬层，在该衬底上且包括合金，该合金含有Co、Fe、元素X和元素Y，其中X是Ta或Nb，Y是Zr或Hf，其中所述合金中X和Y的组合量为约10和20原子百分比之间；
垂直磁记录层，包括Co基铁磁合金的晶粒，其具有六角密堆积(hcp)晶体结构且c轴基本垂直于该记录层取向；以及
交换中断层，在该衬层与该记录层之间用于磁去耦该记录层与该衬层。
12.如权利要求11所述的盘，其中所述元素X是Ta且所述元素Y是Zr。
13.如权利要求11所述的盘，其中所述合金中的Co与所述合金中的Fe的原子比在约90∶10至10∶90的范围。
14.如权利要求13所述的盘，其中所述合金中的Co与所述合金中的Fe的原子比在约25∶75至35∶65的范围。
15.如权利要求11所述的盘，其中该记录层还包括选自包括Si、Ta、Ti和Nb的组的一种或更多种元素的氧化物或多种氧化物。
16.如权利要求11所述的盘，其中所述衬层包括所述导磁材料的两层膜且还包括将所述两层导磁膜分隔开的非磁膜。
17.如权利要求16所述的盘，其中所述非磁膜提供所述两层导磁膜的反铁磁耦合。
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| Application Number | Priority Date | Filing Date | Title |
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| US11/251,142 US7524570B2 (en) | 2005-10-13 | 2005-10-13 | Perpendicular magnetic recording system and medium with high-moment corrosion-resistant “soft” underlayer (SUL) |
| US11/251,142 | 2005-10-13 |
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| CN1949369A true CN1949369A (zh) | 2007-04-18 |
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| EP (1) | EP1788559B1 (zh) |
| JP (1) | JP2007109378A (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102149836A (zh) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | 用于在垂直磁记录介质中的软磁膜层的合金,溅射靶材及其制备方法 |
| CN109182845A (zh) * | 2018-09-26 | 2019-01-11 | 山西师范大学 | 一种钴基软磁合金的固相反应合成方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7524570B2 (en) * | 2005-10-13 | 2009-04-28 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording system and medium with high-moment corrosion-resistant “soft” underlayer (SUL) |
| JP4470881B2 (ja) * | 2005-12-27 | 2010-06-02 | 昭和電工株式会社 | 磁気記録媒体、および磁気記録再生装置 |
| JP5031443B2 (ja) * | 2007-05-29 | 2012-09-19 | 山陽特殊製鋼株式会社 | 垂直磁気記録媒体における軟磁性膜層用合金 |
| KR101196732B1 (ko) * | 2008-02-01 | 2012-11-07 | 시게이트 테크놀로지 엘엘씨 | 수직자기 기록매체 |
| US20100110584A1 (en) * | 2008-10-30 | 2010-05-06 | Qing Dai | Dual oxide recording sublayers in perpendicular recording media |
| JP5360894B2 (ja) * | 2009-06-30 | 2013-12-04 | ダブリュディ・メディア・シンガポール・プライベートリミテッド | 磁気記録媒体の製造方法 |
| US9548073B1 (en) | 2013-03-13 | 2017-01-17 | WD Media, LLC | Systems and methods for providing high performance soft magnetic underlayers for magnetic recording media |
| JP6113817B2 (ja) * | 2015-11-30 | 2017-04-12 | 山陽特殊製鋼株式会社 | 垂直磁気記録媒体における軟磁性薄膜層用合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 |
| US20230317103A1 (en) * | 2022-01-24 | 2023-10-05 | International Business Machines Corporation | Magnetic recording tape and apparatus |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030734B2 (ja) * | 1979-04-11 | 1985-07-18 | 健 増本 | 鉄族元素とジルコニウムを含む脆性が小さく熱的安定性に優れる非晶質合金 |
| JP3731640B2 (ja) * | 1999-11-26 | 2006-01-05 | 株式会社日立グローバルストレージテクノロジーズ | 垂直磁気記録媒体及び磁気記憶装置 |
| US6835475B2 (en) * | 2001-07-26 | 2004-12-28 | Hitachi Global Storage Technologies Netherlands B.V. | Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films |
| US7041205B2 (en) * | 2001-08-14 | 2006-05-09 | Seagate Technology Llc | Sputtering target and method for making composite soft magnetic films with a sintered target |
| JP2003067909A (ja) * | 2001-08-24 | 2003-03-07 | Fuji Electric Co Ltd | 垂直磁気記録媒体 |
| US7175925B2 (en) * | 2003-06-03 | 2007-02-13 | Seagate Technology Llc | Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same |
| US7081268B2 (en) * | 2003-06-03 | 2006-07-25 | Seagate Technology Llc | In-situ post-deposition oxidation treatment for improved magnetic recording media |
| US7033685B2 (en) * | 2003-10-07 | 2006-04-25 | Seagate Technology Llc | High coercivity perpendicular magnetic recording media on polymer substrates |
| US7354630B2 (en) * | 2003-11-06 | 2008-04-08 | Seagate Technology Llc | Use of oxygen-containing gases in fabrication of granular perpendicular magnetic recording media |
| US20050098426A1 (en) * | 2003-11-12 | 2005-05-12 | Seagate Technology Llc | Heat-assisted post-deposition oxidation treatment for improved perpendicular magnetic recording media |
| US7354618B2 (en) * | 2003-11-12 | 2008-04-08 | Seagate Technology Llc | Oxygen plasma post-deposition treatment of magnetic recording media |
| JP4912153B2 (ja) * | 2003-12-01 | 2012-04-11 | イミューノメディクス、インコーポレイテッド | タンパク質とキレート剤とのコンジュゲートを調製するための改良された方法 |
| US7368188B2 (en) * | 2004-01-30 | 2008-05-06 | Fujifilm Corporation | Magnetic recording medium |
| US20050181239A1 (en) * | 2004-02-12 | 2005-08-18 | Seagate Technology Llc | Granular magnetic recording media with improved corrosion resistance by pre-carbon overcoat ion etching |
| US7837836B2 (en) * | 2004-02-12 | 2010-11-23 | Seagate Technology Llc | Method and apparatus for multi-stage sputter deposition of uniform thickness layers |
| US7235314B2 (en) * | 2004-03-11 | 2007-06-26 | Seagate Technology Llc | Inter layers for perpendicular recording media |
| US7201977B2 (en) * | 2004-03-23 | 2007-04-10 | Seagate Technology Llc | Anti-ferromagnetically coupled granular-continuous magnetic recording media |
| US7524570B2 (en) * | 2005-10-13 | 2009-04-28 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording system and medium with high-moment corrosion-resistant “soft” underlayer (SUL) |
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| CN102149836A (zh) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | 用于在垂直磁记录介质中的软磁膜层的合金,溅射靶材及其制备方法 |
| CN109182845A (zh) * | 2018-09-26 | 2019-01-11 | 山西师范大学 | 一种钴基软磁合金的固相反应合成方法 |
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| Publication number | Publication date |
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| CN100431012C (zh) | 2008-11-05 |
| US20070087225A1 (en) | 2007-04-19 |
| KR20070041317A (ko) | 2007-04-18 |
| US20090213494A1 (en) | 2009-08-27 |
| DE602006006891D1 (de) | 2009-07-02 |
| EP1788559A1 (en) | 2007-05-23 |
| JP2007109378A (ja) | 2007-04-26 |
| EP1788559B1 (en) | 2009-05-20 |
| US7524570B2 (en) | 2009-04-28 |
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