CN1945842A - 一种tft lcd阵列基板结构及其制造方法 - Google Patents
一种tft lcd阵列基板结构及其制造方法 Download PDFInfo
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- CN1945842A CN1945842A CNA2006101498861A CN200610149886A CN1945842A CN 1945842 A CN1945842 A CN 1945842A CN A2006101498861 A CNA2006101498861 A CN A2006101498861A CN 200610149886 A CN200610149886 A CN 200610149886A CN 1945842 A CN1945842 A CN 1945842A
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CNB2006101498861A CN100421257C (zh) | 2006-10-27 | 2006-10-27 | 一种tft lcd阵列基板结构及其制造方法 |
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CNB2006101498861A CN100421257C (zh) | 2006-10-27 | 2006-10-27 | 一种tft lcd阵列基板结构及其制造方法 |
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CN1945842A true CN1945842A (zh) | 2007-04-11 |
CN100421257C CN100421257C (zh) | 2008-09-24 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101713893B (zh) * | 2009-10-26 | 2012-07-04 | 华映光电股份有限公司 | 画素数组 |
CN103941509A (zh) * | 2014-04-16 | 2014-07-23 | 深圳市华星光电技术有限公司 | 阵列基板与液晶面板 |
CN111009185A (zh) * | 2018-10-08 | 2020-04-14 | 元太科技工业股份有限公司 | 像素阵列 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR100193653B1 (ko) * | 1995-11-20 | 1999-06-15 | 김영환 | 축적 캐패시터를 구비한 스태거 tft-lcd 및 그의 제조방법 |
CN1124518C (zh) * | 2001-01-11 | 2003-10-15 | 友达光电股份有限公司 | 薄膜晶体管液晶显示器的制作方法 |
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- 2006-10-27 CN CNB2006101498861A patent/CN100421257C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101713893B (zh) * | 2009-10-26 | 2012-07-04 | 华映光电股份有限公司 | 画素数组 |
CN103941509A (zh) * | 2014-04-16 | 2014-07-23 | 深圳市华星光电技术有限公司 | 阵列基板与液晶面板 |
WO2015158021A1 (zh) * | 2014-04-16 | 2015-10-22 | 深圳市华星光电技术有限公司 | 阵列基板与液晶面板 |
CN111009185A (zh) * | 2018-10-08 | 2020-04-14 | 元太科技工业股份有限公司 | 像素阵列 |
CN111009185B (zh) * | 2018-10-08 | 2021-10-12 | 元太科技工业股份有限公司 | 像素阵列 |
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CN100421257C (zh) | 2008-09-24 |
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Owner name: JINGDONGFANG PHOTOELECTRIC SCIENCE & TECHNOLOGY C Free format text: FORMER OWNER: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Effective date: 20071019 |
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Effective date of registration: 20071019 Address after: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Applicant after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Co-applicant after: BOE Technology Group Co., Ltd. Address before: 100016 No. 10, Jiuxianqiao Road, Beijing, Chaoyang District Applicant before: BOE Technology Group Co., Ltd. |
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Effective date of registration: 20201123 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. |
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