CN1941327A - 制造图像传感器的方法 - Google Patents

制造图像传感器的方法 Download PDF

Info

Publication number
CN1941327A
CN1941327A CNA2006101524616A CN200610152461A CN1941327A CN 1941327 A CN1941327 A CN 1941327A CN A2006101524616 A CNA2006101524616 A CN A2006101524616A CN 200610152461 A CN200610152461 A CN 200610152461A CN 1941327 A CN1941327 A CN 1941327A
Authority
CN
China
Prior art keywords
film
usg
layer
sin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101524616A
Other languages
English (en)
Inventor
黄祥逸
沈千万
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TONG-BOO ELECTRONICS Co Ltd
DB HiTek Co Ltd
Original Assignee
TONG-BOO ELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TONG-BOO ELECTRONICS Co Ltd filed Critical TONG-BOO ELECTRONICS Co Ltd
Publication of CN1941327A publication Critical patent/CN1941327A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

本发明涉及制造图像传感器的方法，其中本发明可以增强USG层和SiN层之间的粘合强度。根据本发明的制造图像传感器的方法包括下列步骤：在衬底的电路区域上形成金属垫并使该金属垫图案化；在衬底上形成未掺杂硅玻璃(USG)膜以覆盖金属垫；在USG膜的表面上实施氧(O2)等离子体过程；在已经实施了氧(O2)等离子体过程的USG膜上形成氮化硅(SiN)膜；选择性蚀刻SiN层和USG层以暴露金属垫；和在衬底的光敏元件区域的SiN膜上形成彩色滤镜阵列和微透镜。根据上述结构，可以增强USG膜和SiN膜之间的粘合强度。因此可防止SiN膜从USG膜剥离的剥落现象。

Description

制造图像传感器的方法
本申请要求享有在2005年9月30日提交的韩国专利申请No.10-2005-0092216的优先权，通过引用将其全部内容并入本文。
技术领域
本发明涉及图像传感器，更具体涉及用于制造可以增强未掺杂硅玻璃(USG)层和氮化硅(SiN)层之间的粘合强度的图像传感器的方法。
背景技术
一般而言，图像传感器是将光学图像转换为电信号的半导体器件。在图像传感器中，电荷耦合器件(CCD)是其中各个金属氧化物硅(MOS)电容器紧密布置的元件，载荷子存储在电容器中并移动。此外，互补MOS(CMOS)图像传感器是一种采用转换方法的元件，该转换方法利用CMOS技术通过使用与像素一样多的MOS晶体管来顺序检测输出，在CMOS技术中控制电路和信号处理电路被用作外围电路。
在图像传感器制造中，已经进行了一些尝试以改善图像传感器的光敏性。尝试之一是聚焦技术。例如，CMOS图像传感器包括用于感光的光敏元件部分以及用于将传感的光处理成为电信号以产生数据的CMOS逻辑电路部分。此外，已进行的另一尝试是增加光敏元件部分的面积占图像传感器的全部面积的比值(通常被称为“滤光系数”)，以增加光敏性。但是，由于逻辑电路部分不能根本性地移除，因此这种尝试在有限的面积中具有局限性。
图1a-1f是图示说明用于制造传统图像传感器的方法的截面图。
参考图1a，在半导体衬底1上形成绝缘层2，其中形成用于在图像传感器的单元像素之间电绝缘的场绝缘层(未示出)、一个或多个光敏元件(未示出)以及在场绝缘层之间的逻辑电路(未示出)。
在绝缘层2上方形成由铝(Al)或铜(Cu)制成的金属垫4。分别在金属垫4下方和上方形成下和上阻挡层3和5。下和上阻挡层3和5通过沉积材料例如钛(Ti)或氮化钛(TiN)来形成，并且它们被用作增加接触部分电导率的阻挡层。
通过利用光刻胶PR作为掩模的蚀刻过程来依次剥离上阻挡层5、金属垫4和下阻挡层3，其中所述光刻胶PR形成在所产生结构上的预定区域(其中将形成逻辑电路的金属垫区域)中。
参考图1b，USG(未掺杂硅玻璃)层6b和氮化硅(SiN)6a依次沉积在衬底1的绝缘层2上，以保护元件免受外部水分和刮擦的损伤。同时，在图1b中，附图标记A表示光敏元件区域，B表示逻辑电路区域。
参考图1c，光刻胶PR涂布在垫开口区域以外的区域中的USG层6b和SiN层6a上，由此打开金属垫部分3、4和5。
参考图1d，利用涂布在SiN层6a上的光刻胶PR作为掩模通过TV(端路(Terminal Via))蚀刻来剥离垫开口区域中的SiN层6a、USG层6b和上阻挡层5。在TV蚀刻过程中，使用CHF3、CH4和N2并且在USG∶TiN＝10∶1的蚀刻比下实施该蚀刻过程。通过TV蚀刻过程来蚀刻SiN层6a和USG层6b以及金属垫单元3、4和5的上阻挡层5，从而暴露金属垫4。在封装图像传感器的后续过程中，将金属垫的暴露部分C用作将实施引线结合的区域。
参考图1e，将光刻胶涂布在SiN层6a的光敏元件区域A上以除去拓扑结构并增强粘附。通过曝光和显影过程来使光刻胶图案化，产生第一平坦化层7。
参考图1f，将染色的光刻胶涂布在光敏元件区域A中的第一平坦化层7上。通过曝光和显影过程来使光刻胶图案化，由此形成包括红、绿和蓝色滤镜的彩色滤镜阵列8。以包围彩色滤镜阵列8的方式，在具有彩色滤镜阵列8的第一平坦化层7上形成第二平坦化层9。
之后，将光刻胶涂布在光敏元件区域A中的第二平坦化层9上，然后通过曝光和显影过程使其图案化，使得光刻胶图案保留在与彩色滤镜阵列8相对的位置。然后实施退火过程以淹没光刻胶图案，由此形成用于将光聚焦在第二平坦化层9上的半球形微透镜10。由此完成图像传感器的制造过程。
在图像传感器的传统制造方法中，由于与USG层6b的粘附较差，导致在退火过程例如TV烧结过程中，发生SiN层6a以圆环方式剥离的剥落现象，如图2所示。换言之，由于在TV烧结过程后衬底冷却时产生的应力，导致当SiN层6a离开USG层6b时发生SiN层6a的剥落现象。剥落现象是由氧化物和金属之间热膨胀差异所引起的。因此，剥落现象通常发生在金属垫单元C的附近。
因此，在图像传感器的传统制造方法中，由于USG层6b的剥落现象导致剥离的SiN层6a的碎片落在器件的图案上，由此引起图像传感器的失效。
发明内容
因此，考虑到现有技术中发生的上述问题而做出了本发明，本发明的目的是提供一种用于制造图像传感器的方法，该方法可改善USG层和SiN层之间的粘合强度。
为了实现上述目的，根据本发明的一方面，提供制造图像传感器的方法，包括下列步骤：在衬底的电路区域上形成金属垫并使该金属垫图案化；在衬底上形成未掺杂硅玻璃(USG)膜，以覆盖金属垫；在USG膜的表面上实施氧(O2)等离子体过程；在已经实施了氧(O2)等离子体过程的USG膜上形成氮化硅(SiN)膜；选择性蚀刻SiN层和USG层以暴露金属垫；和在衬底的光敏元件区域的SiN膜上形成彩色滤镜阵列和微透镜。
在USG膜的表面上实施氧(O2)等离子体过程的步骤包括使用采用远程等离子体设备的化学干蚀刻过程。
在化学干蚀刻过程中，用作蚀刻气体的氧(O2)气的流量可以设置为400-500sccm。
在化学干蚀刻过程中，实施氧(O2)等离子体过程时的压力可以设置为40-50Pa。
在化学干蚀刻过程中，实施氧(O2)等离子体过程时的处理时间可以设置为50-100秒。
在衬底的电路区域上形成金属垫并使金属垫图案化的步骤可以包括下列步骤：在衬底上形成绝缘膜，在绝缘膜上依次形成由金属材料制成的下阻挡膜、金属垫和上阻挡膜，和选择性剥离下阻挡膜、金属垫和上阻挡膜。
形成彩色滤镜阵列和微透镜的步骤可以包括下列步骤：在衬底的光敏元件区域的SiN膜上形成第一平坦化层，在第一平坦化层上形成彩色滤镜阵列，形成覆盖彩色滤镜阵列的第二平坦化层，和在第二平坦化层上形成微透镜。
下面将参考附图并结合具体实施方案来详细说明本发明。
附图说明
图1a-1f是图示说明用于制造传统图像传感器的方法的截面图；
图2是示出图1f中所示SiN层剥离的剥落现象的图；和
图3a-3h是图示说明用于制造根据本发明实施方案的图像传感器的方法的截面图。
具体实施方式
图3a-3h是图示说明用于制造根据本发明实施方案的图像传感器的方法的截面图。
参考图3a，在半导体衬底101上形成绝缘层102，其中形成用于在图像传感器的单元像素之间电绝缘的场绝缘层(未示出)、一个或多个光敏元件(未示出)以及在场绝缘层之间的逻辑电路(未示出)。
在绝缘层102上方形成由铝(Al)或铜(Cu)制成的金属垫104。分别在金属垫104下方和上方形成下和上阻挡层103和105。下和上阻挡层103和105通过沉积例如钛(Ti)或氮化钛(TiN)的材料来形成，并且它们被用作阻挡物以增加接触部分的电导率。
通过利用光刻胶PR作为掩模的蚀刻过程来依次剥离上阻挡层105、金属垫104和下阻挡层103，其中所述光刻胶PR形成在所产生结构上的预定区域(具体地，其中将形成逻辑电路的金属垫区域)中。
参考图3b，在衬底101的绝缘层102上沉积USG层106a，以保护元件免受外部水分和刮擦的损伤。因此，形成在绝缘层102上的金属垫单元103、104和105覆盖有USG层106a。
参考图3c，利用CED(化学干蚀刻)设备(即远程等离子体设备)在USG层106a的表面上实施氧(O2)等离子体过程，以防止等离子体损害，在实施氧(O2)等离子体过程时，氧(O2)的流量优选约400-500sccm，用于产生远程等离子体的微波功率优选约600-700W。此外，压力优选约40-50Pa并且处理时间优选约50-100秒。
参考图3d，在已经实施氧(O2)等离子体过程的USG层106a上沉积SiN层106b。因此，SiN层106b更加牢固地粘附在已经实施(O2)等离子体过程的USG层106a上。同时，在图3d中，附图标记A表示光敏元件区域，B表示逻辑电路区域。
参考图3e，光刻胶PR被涂布在垫开口区域以外的USG层106a和SiN层106b上，从而打开金属垫单元103、104和105。
参考图3f，利用涂布在SiN层106b上的光刻胶PR作为掩模，通过TV蚀刻来剥离垫开口区域的SiN层106b、USG层106a和上阻挡层105。在TV蚀刻过程中，使用CHF3、CH4和N2并且在USG∶TiN＝10∶1的蚀刻比下实施该蚀刻过程。通过TV蚀刻过程来蚀刻USG层106a和SiN层106b以及金属垫单元103、104和105的上阻挡层105，由此暴露金属垫104。暴露的金属垫单元C是在封装图像传感器的后续过程中将实施引线结合的区域。
参考图3g，将光刻胶涂布在光敏元件区域A中的SiN层106b上，以克服拓扑步骤并增强粘附。通过曝光和显影过程来使光刻胶图案化，由此形成第一平坦化层107。
参考图3h，将染色的光刻胶涂布在光敏元件区域A的第一平坦化层107上。通过曝光和显影过程来使光刻胶图案化，由此形成包括红、绿和蓝色的彩色滤镜阵列108。以定包围彩色滤镜阵列108的方式，在其上具有彩色滤镜阵列108的第一平坦化层107上形成第二平坦化层109。
之后，将光刻胶涂布在光敏元件区域A的第二平坦化层9上，然后通过曝光和显影过程来使其图案化，使得光刻胶图案保留在与彩色滤镜阵列108相对的位置。然后实施退火过程以淹没光刻胶图案，由此形成用于将光聚焦在第二平坦化层109上的半球形微透镜110。由此完成图像传感器的制造过程。
在根据本发明实施方案的图像传感器制造方法中，在USG层106a表面上实施氧(O2)等离子体过程，以增强USG层106a和SiN层106b之间的粘合强度。因此可防止在在退火过程例如TV烧结中，SiN层106b以圆环方式从USG层106a剥离的剥落现象。
如上所述，根据本发明的图像传感器的制造方法，在USG层表面上实施氧(O2)等离子体过程并且在USG层上形成SiN层。因此，由于USG层和SiN层之间的粘合强度增强，因而可以防止SiN层从USG层剥离的剥落现象。因此，本发明的优点在于它可以改善图像传感器的良率和产量。
虽然已经参考具体的示例性实施方案说明了本发明，但是本发明并不受这些实施方案的限制，本发明仅受限于所附的权利要求。应该理解的是，本领域技术人员可以改变或修改这些实施方案而不偏离本发明的范围和精神。

Claims (7)

1.一种制造图像传感器的方法，所述方法包括以下步骤：
在衬底的电路区域上形成金属垫并使该金属垫图案化；
在衬底上形成未掺杂硅玻璃(USG)膜以覆盖金属垫；
在USG膜的表面上实施氧(O2)等离子体过程；
在其上已经实施了氧(O2)等离子体过程的USG膜上形成氮化硅(SiN)膜；
选择性蚀刻SiN层和USG层以暴露金属垫；和
在衬底的光敏元件区域的SiN膜上形成彩色滤镜阵列和微透镜。
2.权利要求1的方法，其中在USG膜的表面上实施氧(O2)等离子体过程的步骤包括采用使用远程等离子体设备的化学干蚀刻过程。
3.权利要求2的方法，其中在化学干蚀刻过程中，用作蚀刻气体的氧(O2)气的流量设置为400-500sccm。
4.权利要求2的方法，其中在化学干蚀刻过程中，实施氧(O2)等离子体过程时的压力设置为40-50Pa。
5.权利要求2的方法，其中在化学干蚀刻过程中，实施氧(O2)等离子体过程时的处理时间设置为50-100秒。
6.权利要求1的方法，其中在衬底的电路区域上形成金属垫并使金属垫图案化的步骤包括下列步骤：
在衬底上形成绝缘膜；
在绝缘膜上因此形成由金属材料制成的下阻挡膜、金属垫和上阻挡膜；和
选择性剥离下阻挡膜、金属垫和上阻挡膜。
7.权利要求1的方法，其中形成彩色滤镜阵列和微透镜的步骤包括下列步骤：
在衬底的光敏元件区域的SiN膜上形成第一平坦化层；
在第一平坦化层上形成彩色滤镜阵列；
形成第二平坦化层以覆盖彩色滤镜阵列；和
在第二平坦化层上形成微透镜。
CNA2006101524616A 2005-09-30 2006-09-29 制造图像传感器的方法 Pending CN1941327A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050092216A KR100640981B1 (ko) 2005-09-30 2005-09-30 이미지 센서의 제조방법
KR1020050092216 2005-09-30

Publications (1)

Publication Number Publication Date
CN1941327A true CN1941327A (zh) 2007-04-04

Family

ID=37649801

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101524616A Pending CN1941327A (zh) 2005-09-30 2006-09-29 制造图像传感器的方法

Country Status (3)

Country Link
US (1) US20070077766A1 (zh)
KR (1) KR100640981B1 (zh)
CN (1) CN1941327A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903667A (zh) * 2011-07-26 2013-01-30 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN103035509A (zh) * 2011-09-29 2013-04-10 中芯国际集成电路制造(上海)有限公司 半导体器件的制造方法
CN103165515A (zh) * 2011-12-08 2013-06-19 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841861B1 (ko) * 2006-12-28 2008-06-27 동부일렉트로닉스 주식회사 씨모스이미지센서의 제조 방법
TWI413244B (zh) * 2008-07-04 2013-10-21 United Microelectronics Corp 影像感測器及其製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319814B1 (en) 1999-10-12 2001-11-20 United Microelectronics Corp. Method of fabricating dual damascene
JP2002057212A (ja) * 2000-08-09 2002-02-22 Mitsubishi Electric Corp 半導体装置、及び半導体装置の製造方法
JP2001284450A (ja) * 2000-04-03 2001-10-12 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
KR100533166B1 (ko) * 2000-08-18 2005-12-02 매그나칩 반도체 유한회사 마이크로렌즈 보호용 저온산화막을 갖는 씨모스이미지센서및 그 제조방법
KR100462757B1 (ko) * 2002-03-14 2004-12-20 동부전자 주식회사 이미지 센서용 반도체 소자 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102903667A (zh) * 2011-07-26 2013-01-30 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN102903667B (zh) * 2011-07-26 2016-05-25 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
CN103035509A (zh) * 2011-09-29 2013-04-10 中芯国际集成电路制造(上海)有限公司 半导体器件的制造方法
CN103035509B (zh) * 2011-09-29 2015-03-11 中芯国际集成电路制造(上海)有限公司 半导体器件的制造方法
CN103165515A (zh) * 2011-12-08 2013-06-19 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法
CN103165515B (zh) * 2011-12-08 2015-03-11 中芯国际集成电路制造(上海)有限公司 半导体器件的制作方法

Also Published As

Publication number Publication date
KR100640981B1 (ko) 2006-11-02
US20070077766A1 (en) 2007-04-05

Similar Documents

Publication Publication Date Title
JP4384454B2 (ja) イメージ素子
JP2001298175A (ja) 撮像システム
US7435615B2 (en) Method for fabricating CMOS image sensor
JP2003224249A (ja) 半導体撮像装置及びその製造方法
KR100769131B1 (ko) Ｃｍｏｓ 이미지 센서의 제조 방법
KR100524200B1 (ko) 이미지 소자 및 그 제조 방법
JP3992714B2 (ja) Ｃｍｏｓイメージセンサー及びその製造方法
CN1941327A (zh) 制造图像传感器的方法
US20060183266A1 (en) Method of fabricating CMOS image sensor
CN1819247A (zh) Cmos图像传感器及其制造方法
US7879640B2 (en) CMOS image sensor and method for fabricating the same
US20060148123A1 (en) Method for fabricating CMOS image sensor
CN1801494A (zh) Cmos图像传感器的滤色器阵列及其重新形成方法
KR100871553B1 (ko) 이미지 센서 및 그 제조방법
US20090114960A1 (en) Image Sensor and a Method for Manufacturing the Same
US20060039044A1 (en) Self-aligned image sensor and method for fabricating the same
KR100449951B1 (ko) 이미지센서 및 그 제조 방법
KR100790209B1 (ko) 시모스 이미지센서
US6800838B2 (en) Image sensor having reduced stress color filters and method of making
US20080054387A1 (en) Image Sensor and Method for Manufacturing the Same
JPH10321828A (ja) 固体撮像素子の製造方法
KR100410590B1 (ko) 이미지센서 및 이미지센서 제조방법
KR20050011951A (ko) 마이크로렌즈 캡핑레이어의 들뜸 현상을 방지한 시모스이미지센서의 제조방법
KR100850143B1 (ko) 이미지 센서 제조 방법
KR20030042305A (ko) 시모스 이미지센서의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Open date: 20070404