CN1885516A - Structure of electric connection pad - Google Patents
Structure of electric connection pad Download PDFInfo
- Publication number
- CN1885516A CN1885516A CNA200510079606XA CN200510079606A CN1885516A CN 1885516 A CN1885516 A CN 1885516A CN A200510079606X A CNA200510079606X A CN A200510079606XA CN 200510079606 A CN200510079606 A CN 200510079606A CN 1885516 A CN1885516 A CN 1885516A
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- China
- Prior art keywords
- connection gasket
- projection
- peristome
- electric connection
- drive integrated
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The related electric connection cushion comprises: arranging an insulation layer on cushion top, forming some openings on the cushion to expose small-area cushion surface to electric connect with the cushion. Thereby, a metal projection formed on the opening and near area has smooth plane.
Description
Technical field
The present invention relates to the structure of an electric connection pad, mainly be at glass flip chip encapsulation (Chip on Glass, COG) in, make the golden projection of going up in order to electrically connect at drive integrated circult (IC) have a very smooth surface.
Background technology
LCD compare with conventional cathode ray tube (CRT) have low voltage drive, low-power consumption, the capacity of display are big, low radiation and characteristic such as frivolous, so be widely used on various audio-visual devices and the communication apparatus.The packaged type of the drive integrated circult of this LCD also directly encapsulates (Chip on Board by early stage chip, COB), coil type encapsulation (Tape Carrier Bonding, TAB) develop into glass flip chip of today (Chip on Glass, COG), (Chip on Film COF) waits packaged type to membrane of flip chip.
Seeing also Fig. 1, is a kind of crimping schematic diagram of glass flip chip structure.This glass flip chip structure comprises a drive integrated circult (IC) 11, an Anisotropically conductive film 12 and a glass substrate 13.Have a plurality of golden projections (gold bump) 111 on this drive integrated circult 11, and a plurality of corresponding electrodes 131 that form by conductive film of number and position with these golden projections 111 of tool on this glass substrate 13, (Anisotropic ConductiveFilm, ACF) 12 are made up of binder (binder) 121 and the conducting particles (conductive particles) 122 that is positioned at wherein this Anisotropically conductive film.This glass flip chip encapsulating structure is to make the golden projection 111 of drive integrated circult 11 and the electrode 131 crimping conductings on the glass substrate 13 by this Anisotropically conductive film 12.
The crimping mode of this glass flip chip structure is at first, to provide this glass substrate 13, and have the electrode 131 that a plurality of conductive films form on this glass substrate 13; With these Anisotropically conductive film 12 glutinous overlaying on this glass substrate 13; This drive integrated circult 11 is placed on this Anisotropically conductive film 12, have a plurality of golden projections 111 on this drive integrated circult 11, these golden projections 111 are corresponding with the electrode 131 on the glass substrate 13 respectively.Then under uniform temperature, speed and pressure condition, said structure is carried out precompressed and this pressure (main bonding) operation, make of electrode 131 electric connections of the golden projection 111 of drive integrated circult 11, and drive integrated circult 11 and glass substrate 13 are binded (as shown in Figure 2) by binder 121 by conducting particles 122 with this glass substrate 13 of this Anisotropically conductive film 12.
The main feature of this Anisotropically conductive film 12 is that Z axle (thickness) direction electrically conducts, and the characteristic of not conducting of horizontal direction, therefore need only conducting particles 122 enough little or insulation well mutually, can reach the joint effect of the thin space (fine pitch) between each golden projection 111.
Because LCD is towards having more high-resolution display direction development at present, to face the increasing problem of pin (pin) quantity of drive integrated circult 11, just not only on the drive integrated circult 11 integrated level of circuit more and more high, and the number of these golden projections 111 is also more and more.
So the designer is for reducing the shared space of spacing (pitch) of each golden projection 111, utilizable place is except these electrically connect the layout parameter of line, be exactly the spacing of dwindling between each golden projection 111 in addition, because if the spacing of each golden projection 111 can't reduce effectively, the developing direction that the limited chip size is reduced day by day.
But, the particle size range of common now conducting particles 122 is between 3～15 μ m, too big conducting particles 122 meetings reduce the population of each electrode contact, cause adjacent electrode simultaneously easily because conducting particles 122 contacts and the situation (as shown in Figure 3) of short circuit 14.In the same manner, after the spacing of dwindling between each golden projection 111, also above-mentioned problem can appear, so in order to form thin space, just must use the conducting particles 122 of small particle diameter, as the conducting particles 122 of particle diameter 3～4 μ m.
But, as shown in Figure 4, this figure is the schematic diagram that the electric connection pad of drive integrated circult 11 is shown, connection gasket 112 on this drive integrated circult 11 forms a connection gasket peristome (pad open) 114 (please consulting shown in Figure 5 again) by an insulating barrier 113 by the gold-tinted manufacturing process, again by electroplating the golden projection 111 that manufacturing process forms about 15～17 μ m thickness.
And in being connected of the electrode 131 of the golden projection 111 of general standard and this glass substrate 13, need crush conducting particles 122 more than five, because should gold projection 111 be formed on this connection gasket peristome 114 and the peripheral insulating barrier 113 thereof, so be about 2000 μ m at surface area that generally should gold projection 111
2Situation under, because the thickness relationship of this insulating barrier 113, the surface 1141 of this gold projection 111 will form one to the surface appearance of about 2 μ m of sinking, and generally electroplates the plating drop that manufacturing process also can produce surface ± 1 μ m at grade because of the factor of manufacturing process.
Described above comprehensive, the surface of this gold projection 111 1141 is the highest will to have the height fall of 4 μ m with lowest part.Like this, the small particle diameter conducting particles 122 of 3～4 μ m will cause because of the drop height on this surface 1141 this conducting particles 122 press brokenly inadequately and and the contact area between the golden projection 111 not enough, connect effect thereby produce excellent electrical property.
Summary of the invention
Thus, main purpose of the present invention is to solve the flattening surface problem of these golden projections on this drive integrated circult, planarization by this gold lug surface, in the crimping manufacturing process of glass flip chip encapsulation, make this small particle diameter conducting particles not have the broken inadequately of pressure, thereby produce the not enough problem of contact area, make to have excellent electrical property between the electrode of connection and connect effect.
Another object of the present invention is to the drive integrated circult that is used for glass flip chip encapsulation to any, need not change under the situation of manufacturing process, optional usefulness has the Anisotropically conductive film of the conducting particles of small particle diameter, thereby reach the purpose of dwindling the thin space between each golden projection, can increase the circuit level on the drive integrated circult thus.
The present invention is a kind of electric connection mat structure, is used for the drive integrated circult of glass flip chip encapsulation, and wherein this structure comprises: a connection gasket is positioned on this drive integrated circult; One insulating barrier is arranged on this connection gasket top, and insulating barrier forms a plurality of connection gasket peristomes by the gold-tinted manufacturing process, exposes the small size surface of connection gasket by this connection gasket peristome; One gold medal projection forms above this insulating barrier, and it electrically connects by this connection gasket peristome and this connection gasket.
The present invention's large-area connection gasket opening structure originally changes a plurality of connection gasket peristomes into, the area ratio of the not open area by adjusting these connection gasket peristomes and insulating barrier, considering under the condition that electrically connects, when golden projection forms on the insulating barrier of these connection gasket peristomes and periphery thereof, will be little because of the single area of these connection gasket peristomes, and reduce the influence of the excessive settlement that existing single large-area connection gasket peristome produced, make the formed golden projection of the present invention have a very smooth surface.
Description of drawings
Fig. 1 is a kind of crimping schematic diagram of glass flip chip encapsulation of prior art.
Fig. 2 is the schematic diagram of glass flip chip encapsulation.
Fig. 3 is owing to the conducting particles contact produces the schematic diagram of short circuit.
Fig. 4 is the schematic diagram of the electric connection pad of existing drive integrated circult.
Fig. 5 is the schematic diagram of connection gasket hatch frame shown in Figure 4.
Fig. 6 is the schematic diagram of glass flip chip encapsulation of the present invention.
Fig. 7 is the schematic diagram of the electric connection pad of drive integrated circult of the present invention.
Fig. 8 is the schematic diagram of connection gasket hatch frame shown in Figure 7.
Embodiment
Relevant detailed description of the present utility model and technology contents, existing accompanying drawings is as follows:
Seeing also shown in Figure 6ly, is the schematic diagram of glass flip chip of the present invention encapsulation.This glass flip chip encapsulation comprises a drive integrated circult (IC) 21, and has a plurality of golden projections 211 on this drive integrated circult 21; One glass substrate 23, and have the electrode 231 that the corresponding conductive films of number and position a plurality of and these golden projections 211 form on this glass substrate 23; One Anisotropically conductive film 22, this Anisotropically conductive film 22 are by binder 221 and be positioned at wherein the conducting particles 222 of the small particle diameter of about 3～4 μ m of particle diameter and form.Wherein, this glass flip chip encapsulation is electrode 231 electric connections of the golden projection 211 of drive integrated circult 21 being passed through this conducting particles 222 and this glass substrate 23, and by binder 221 drive integrated circult 21 and glass substrate 23 is binded.
The present invention mainly is a kind of electric connection mat structure, it is a kind of improvement of the electric connection pad to this drive integrated circult 21, the broken inadequately situation that makes these conducting particless 222 in the glass flip chip encapsulation process can not occur pressing, and have enough contacts area between the electrode 231 of this glass substrate 23 and the golden projection 211, connect effect so have excellent electrical property.
Please consulting Fig. 7 again, is the schematic diagram of the electric connection pad of this drive integrated circult 21, and this drive integrated circult 21 is provided with and is used for the externally connection gasket 212 of connection.One insulating barrier 213 is arranged on this connection gasket 212 tops, and this insulating barrier 213 forms the connection gasket peristome 214 of a plurality of small sizes by the gold-tinted manufacturing process, the surface (please consulting shown in Figure 8 again) of exposing this connection gasket 212 by these connection gasket peristomes 214, wherein be not communicated with mutually between these connection gasket peristomes 214, and the gross area in these connection gasket peristome 214 zones must make, and to have being connected of standard between this gold projection 211 and this electrode 231 electrical.
And should above this insulating barrier 213, form by gold projection 211, electrically connect by this connection gasket peristome 214 and this connection gasket 212.Material that wherein should gold projection 211 is any one material in copper, nickel and the gold, or leypewter, is formed on thickness between 15～18 μ m by electroplating manufacturing process.
The invention is characterized in that the structure with the large-area connection gasket peristome 114 of existing script (as shown in Figure 5) changes the connection gasket peristome 214 (as shown in Figure 8) of a plurality of small sizes into.Thus, when this gold projection 211 forms on the insulating barrier 213 of these connection gasket peristomes 214 and periphery thereof, because the influences that insulating barrier 213 thickness of the periphery of the connection gasket peristome 214 of single small size sink to the surface 2141 of this gold projection 211 do not reach 1 μ m.Add the factor of electroplating manufacturing process and produce the electroplating surface drop of ± 1 μ m at grade, the surface 2141 of this gold projection 211 is the highest will not to reach 2 μ m with height fall lowest part, and the surface 2141 that is to say this gold projection 211 is very smooth.
The present invention replaces existing single connection gasket peristome 114 by a plurality of connection gasket peristomes 214 and improves existing sagging phenomenon, but because insulating barrier 213 upper surfaces of opening still are not flat states, between this gold projection 211 and this electrode 231, have under the electrical principle of being connected of industry standard, the ratio of the region area of the not opening by adjusting total opening (region areas of a plurality of connection gasket peristomes 214) and insulating barrier 213 can be taken into account the planarization that is connected electrical and these gold projection 211 surfaces 2141 between this gold projection 211 and this electrode 231.
In general industry standard, in being connected of the electrode 231 of this gold projection 211 and this glass substrate 23, need crush the conducting particles 222 more than five, enough electrical contacts area are just arranged at last, and have excellent electrical property connection effect.So the present invention is formed electric connection pad on drive integrated circult 21, because the connection gasket peristome 214 of a plurality of small sizes, make the surface 2141 of this gold projection 211 become very smooth, so when this conducting particles 222 is the small particle diameter of 3～4 μ m for particle diameter, in the crimping manufacturing process of glass flip chip encapsulation, will can not there be the existing defective of pressing brokenly inadequately, not having enough contacts area in this small particle diameter conducting particles 222, make that having excellent electrical property between the electrode that is connected connects effect.
By electric connection mat structure of the present invention, the problem that crushes of above-mentioned small particle diameter conducting particles 222 is solved, and this spacing needs greater than the standard of conducting particles 222 particle diameters more than three times in the industry standard so the spacing between each golden projection 211 meets.Promptly need not change under the situation of manufacturing process, the present invention has the Anisotropically conductive film 22 of the conducting particles 222 of small particle diameter with regard to optional usefulness, with regard to the conducting particles 222 of particle diameter 3 μ m, the spacing of each golden projection 211 can narrow down to 10 μ m, just reach the purpose of thin space, the integrated level of circuit on the drive integrated circult can be provided simultaneously.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. one kind electrically connects mat structure, is used for the drive integrated circult (21) of glass flip chip encapsulation, it is characterized in that described structure comprises:
One connection gasket (212) is positioned on the described drive integrated circult (21);
One insulating barrier (213), be arranged on described connection gasket (212) top, and described insulating barrier (213) forms a plurality of connection gasket peristomes (214) by the gold-tinted manufacturing process, exposes the small size surface of described connection gasket (212) by described connection gasket peristome (214);
One gold medal projection (211) forms in described insulating barrier (213) top, electrically connects by described connection gasket peristome (214) and described connection gasket (212).
2. electric connection mat structure according to claim 1, it is characterized in that, be not communicated with mutually between the described connection gasket peristome (214), and the gross area in described connection gasket peristome (214) zone must make, and to have being connected of standard on described golden projection (211) and the glass-based version (23) between the corresponding electrode (231) electrical.
3. electric connection mat structure according to claim 1 is characterized in that, described golden projection (211) forms by electroplating manufacturing process.
4. electric connection mat structure according to claim 1 is characterized in that, the material of described golden projection (211) is any one in copper, nickel and the gold.
5. electric connection mat structure according to claim 1 is characterized in that, the material of described golden projection (211) is a leypewter.
6. electric connection mat structure according to claim 1 is characterized in that, the thickness of described golden projection (211) is between 15～18 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510079606XA CN100428433C (en) | 2005-06-23 | 2005-06-23 | Structure of electric connection pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510079606XA CN100428433C (en) | 2005-06-23 | 2005-06-23 | Structure of electric connection pad |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1885516A true CN1885516A (en) | 2006-12-27 |
| CN100428433C CN100428433C (en) | 2008-10-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510079606XA Active CN100428433C (en) | 2005-06-23 | 2005-06-23 | Structure of electric connection pad |
Country Status (1)
| Country | Link |
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| CN (1) | CN100428433C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582386B (en) * | 2008-05-14 | 2011-08-03 | 俞宛伶 | Method for forming metallic bump on semiconductor component and sealing semiconductor component |
| CN102543894A (en) * | 2010-12-13 | 2012-07-04 | 奕力科技股份有限公司 | Electrical connection pad structure and integrated circuit comprising a plurality of electrical connection pad structures |
| CN101988994B (en) * | 2009-07-30 | 2012-12-05 | 瀚宇彩晶股份有限公司 | Bonding pad, wafer-substrate bonded packaging structure and liquid crystal display panel |
| CN103117236A (en) * | 2013-02-25 | 2013-05-22 | 江苏汇成光电有限公司 | Producing process of imaging gold bump |
| CN106154594A (en) * | 2015-03-31 | 2016-11-23 | 鸿富锦精密工业（深圳）有限公司 | Electric connection structure and array base palte |
| CN109786349A (en) * | 2018-01-11 | 2019-05-21 | 苏州能讯高能半导体有限公司 | A kind of exhaust device and device welding structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357701A (en) * | 1999-06-16 | 2000-12-26 | Seiko Epson Corp | Semiconductor device and manufacture thereof |
| US20040222520A1 (en) * | 2002-09-19 | 2004-11-11 | Yonggang Jin | Integrated circuit package with flat metal bump and manufacturing method therefor |
| JP2004228295A (en) * | 2003-01-22 | 2004-08-12 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacturing process |
| CN100371808C (en) * | 2003-07-08 | 2008-02-27 | 鸿富锦精密工业（深圳）有限公司 | Glass flip-chip arrangement |
-
2005
- 2005-06-23 CN CNB200510079606XA patent/CN100428433C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101582386B (en) * | 2008-05-14 | 2011-08-03 | 俞宛伶 | Method for forming metallic bump on semiconductor component and sealing semiconductor component |
| CN101988994B (en) * | 2009-07-30 | 2012-12-05 | 瀚宇彩晶股份有限公司 | Bonding pad, wafer-substrate bonded packaging structure and liquid crystal display panel |
| CN102543894A (en) * | 2010-12-13 | 2012-07-04 | 奕力科技股份有限公司 | Electrical connection pad structure and integrated circuit comprising a plurality of electrical connection pad structures |
| CN103117236A (en) * | 2013-02-25 | 2013-05-22 | 江苏汇成光电有限公司 | Producing process of imaging gold bump |
| CN106154594A (en) * | 2015-03-31 | 2016-11-23 | 鸿富锦精密工业（深圳）有限公司 | Electric connection structure and array base palte |
| CN106154594B (en) * | 2015-03-31 | 2019-08-13 | 鸿富锦精密工业（深圳）有限公司 | Electric connection structure and array substrate |
| CN109786349A (en) * | 2018-01-11 | 2019-05-21 | 苏州能讯高能半导体有限公司 | A kind of exhaust device and device welding structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100428433C (en) | 2008-10-22 |
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