CN100416343C - Structure for increasing reliability of metal connecting line - Google Patents
Structure for increasing reliability of metal connecting line Download PDFInfo
- Publication number
- CN100416343C CN100416343C CNB200410002974XA CN200410002974A CN100416343C CN 100416343 C CN100416343 C CN 100416343C CN B200410002974X A CNB200410002974X A CN B200410002974XA CN 200410002974 A CN200410002974 A CN 200410002974A CN 100416343 C CN100416343 C CN 100416343C
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- China
- Prior art keywords
- substrate
- metal
- connecting line
- fiduciary level
- metal connecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The present invention relates to a structure for enhancing reliability of metal connecting lines, which comprises a plurality of metal salient points positioned on a basal plate, wherein the other surface adjacent to the basal plate on each metal salient point is provided with a plurality of grooves. The metal salient points in a lattice structure are formed on a chip so as to increase probability for grabbing conducting particles of an ACF; contact area of the ACF adhesive material and the metal salient points in the grooves of the metal salient points in a lattice structure is increased so as to enhance the tensile strength for the combination of the chip and a glass substrate metal pad.
Description
Technical field
The present invention relates to a kind of structure that increases the metal connecting line fiduciary level, be specifically related to the structure packing technique of integrated circuit, particularly relevant for a kind of structure packing technique that is applied between integrated circuit and display.
Background technology
In some existing electronic installations, being connected between element and main body circuit is to be undertaken by conducting film (for example anisotropy conductiving glue is called for short ACF).Anisotropy conductiving glue ACF mixes with dielectric synthetic resin and conducting particles (conductive particle), conducting particles 1 is shown in the sectional view of Figure 1A, its diameter is approximately 3～5 μ m, its middle body 1a is a polymkeric substance, and be coated with metallic conductor 1b outside, as gold, nickel, tin etc.
ACF often is used to the manufacturing of LCD, having plenty of the chip for driving that is used for panel directly is packaged in manufacture method on the glass substrate (industry is commonly referred to as COG, be chip on glass), perhaps this chip for driving is bonded to flexible PCB (COF, i.e. chip on Film), is bonded to the method for substrate again.In addition, ACF also is applicable to chip bonding in the technology of general printed circuit board (PCB) (COB, i.e. chip onboard).
Shown in Figure 1B, with above-mentioned glass substrate, flexible PCB, printed circuit board (PCB) or other circuit board piece of substrate 4 expressions.In the mill, be formed with metal gasket (pad) 4a on its substrate 4, use for various signals, NE BY ENERGY TRANSFER.On the other hand, on the pin of chip 3, form thicker conductive salient point (bump) 3a.Insert anisotropy conductiving glue (ACF) 5 between chip for driving 3 and the substrate 4, heating changes the viscosity of anisotropy conductiving glue (ACF) 5 then, then pressing chip for driving 3 and substrate 4, this moment corresponding metal gasket 4a with conductive salient point 3a between must be mutual the aligning.
Because conductive salient point 3a has certain thickness, conducting particles 1 can be extruded between conductive salient point 3a and metal gasket 4a.By the metal level 1b that its outer peripheral face coats, the conducting particles 1 that is extruded just constitutes between conductive salient point 3a and metal gasket 4a and is electrically connected.Utilize ACF to carry out Chip Packaging, just can finish the action that bonding chip for driving 3 and circuit couple simultaneously.
When application ACF carried out Chip Packaging, common problem was the migration improperly (migration) of conducting particles.Because the viscosity of resin part descends among the ACF of heating back, when pressing conductive salient point 3a and metal gasket 4a, conducting particles 1 therebetween is diffusive migration towards periphery easily.One of problem is shown in Fig. 1 C, and conducting particles 1 quantity between conductive salient point 3a and metal gasket 4a and increases the resistance that couples very little.Moreover another problem is shown in Fig. 1 D, and too many conducting particles 1 concentrates between adjacent conductive salient point 3a, and produces the electrical connection of side direction, that is adjacent conductive salient point 3a and adjacent metal pad 4a are caused short circuit.Day by day increase at chip functions, and under the situation that the pin number on the unit area increases thereupon, problem of short-circuit will take place more and more easily.And along with the dwindling of au bump area, the phenomenon of conducting particles catch rate deficiency also takes place easily.
Summary of the invention
In view of this, in order to address the above problem, the object of the present invention is to provide a kind of structure that increases the metal connecting line fiduciary level, by on chip, forming metal salient point with grating texture, to increase extracting probability for the conducting particles of ACF, and increase with the contact area of metal salient point in the groove of grating texture metal salient point by the glue material of ACF, to improve the tension intensity that chip combines with the glass substrate metal gasket.
For reaching above-mentioned purpose, the invention provides a kind of structure that increases the metal connecting line fiduciary level, it comprises that a plurality of metal salient points are positioned on the substrate, and each metal salient point has a plurality of grooves on the another side of this substrate.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A has shown typical conductive particle structure;
Figure 1B has shown the ACF bonding method synoptic diagram of chip for driving and glass substrate;
Fig. 1 C, 1D have shown traditional common problem of ACF bonding mode;
Fig. 2 shows the planimetric map of preferred embodiment that the present invention increases the structure of metal connecting line fiduciary level;
Fig. 3 is the sectional view along the 3-3 ' of Fig. 2;
Fig. 4 shows the planimetric map of another preferred embodiment that the present invention increases the structure of metal connecting line fiduciary level;
Fig. 5 shows the planimetric map of another preferred embodiment that the present invention increases the structure of metal connecting line fiduciary level;
Fig. 6 shows the another preferred generation type synoptic diagram that the present invention increases the structure of metal connecting line fiduciary level.
Description of reference numerals
Prior art
1 conductive particle 1b metal level
3 chip 3a conductive salient points
4 substrate 4a metal gaskets
5 ACF
The technology of the present invention
202,602 metal salient points, 204 first substrates
206,402,502 grooves
208 conducting particless, 210 second substrates
212 metal gaskets, 604 resin grating textures
The surface of 606 metal salient points
Embodiment
Embodiment
Please be simultaneously with reference to Fig. 2 and Fig. 3, Fig. 2 shows the planimetric map of preferred embodiment that the present invention increases the structure of metal connecting line fiduciary level.Fig. 3 is the sectional view along the 3-3 ' of Fig. 2.It for example is on first substrate 204 of semiconductor substrate that a plurality of metal salient points 202 are positioned at one, in this preferred embodiment, its semiconductor substrate 204 is a silicon, its metal salient point 202 is preferably gold and forms, be formed in the metal electrode (not shown) that connects chip on the silicon 204, and metal salient point 202 have a plurality of grooves 206 on the another side of first substrate 204.Its groove 206 is preferably rectangle or square, and with the metal salient point 202 of matrix-style arrangement to form a grating texture.The minor face that is noted that its rectangular recess 206 needs diameter than the conducting particles 208 of anisotropy conductiving glue (ACF) for long, so that the metal salient point 202 of its grating texture can effectively grasp conducting particles 208.Its conducting particles diameter is approximately 3～5 μ m, and its middle body is a polymkeric substance, and is coated with metallic conductor outside, as gold, nickel, tin etc.
Thereafter, at the metal salient point 202 on pressing first substrate 204 with when for example being metal gasket 212 on second substrate 210 of glass substrate or resin substrate, it heats at the ACF to 204,210 of two substrates, and high pressure is when sticking together, because of making the conducting particles 208 of its ACF, its grating texture 206 is not easy diffusive migration towards periphery, therefore can effectively grasp conducting particles 208 in groove 206, increase the extracting probability of conducting particles 208.In addition, the metal salient point of its grating texture can also have the groove 402 of four arranged as shown in Figure 4, and shown in Figure 5ly has two grooves 502 side by side, and above-mentioned both all can increase extracting probability for conducting particles.
Generation type
One of the metal salient point 202 of its grating texture is preferably formed mode for gold-tinted, etching its metal salient point composition is become the grating texture with a plurality of grooves 206 again after metal salient point forms.Its another preferred generation type in addition, as shown in Figure 6, for before metal salient point on chip 602 forms as yet, forming the grating texture of being made up of resin 604 earlier forms on the zone of metal salient point 602 in predetermined, when forming metal salient point 602 with plating mode afterwards, its metal salient point promptly forms grating textures because of the influence of the discrepancy in elevation surperficial 606.
The features and advantages of the present invention
The invention is characterized in provides a kind of structure that increases the metal connecting line fiduciary level, by on chip, forming cancellate metal salient point with a plurality of grooves, to increase extracting probability for the conducting particles of ACF, therefore an advantage of the present invention is when pressing first substrate and second substrate, the problem that can improve metal salient point and metal gasket conducting particles number deficiency and the resistance that couples is increased is so can increase the stability of product.Metal salient point and glue material have bigger contact area in this external groove structure, can increase its tension intensity.And because its groove structure can increase the conducting contact area of conducting particles and metal salient point, the present invention also has lowers the advantage that couples resistance.
Though the present invention is open in conjunction with the preferred embodiments as above; so it is not to be used for limiting the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is with appended being as the criterion that claim was defined.
Claims (15)
1. structure that increases the metal connecting line fiduciary level comprises:
Be positioned at a plurality of metal salient points on the substrate; And
Each metal salient point on the another side of this substrate, have the clathrate groove that forms by gold-tinted, etching.
2. the structure of increase metal connecting line fiduciary level as claimed in claim 1, wherein this substrate is the semiconductor substrate.
3. the structure of increase metal connecting line fiduciary level as claimed in claim 1, wherein those metal salient points are formed by gold.
4. the structure of increase metal connecting line fiduciary level as claimed in claim 1, wherein those grooves are rectangle or square.
5. the structure of increase metal connecting line fiduciary level as claimed in claim 4, wherein those rectangles or square groove are arranged with matrix-style.
6. structure that increases the metal connecting line fiduciary level comprises:
Two relative one first substrate and one second substrates;
Be positioned at a plurality of metal salient points on this first substrate, wherein each metal salient point has the clathrate groove that forms by gold-tinted, etching on respect to this second real estate;
Be positioned at a plurality of metal gaskets on this second substrate, wherein those metal gaskets are with respect to those metal salient points; And
One anisotropy conductiving glue is positioned between this first substrate and this second substrate, bind this first substrate and this second substrate, wherein this anisotropy conductiving glue has a plurality of conducting particless, and each metal salient point comprises at least one of those grooves that a conducting particles is arranged in this metal salient point at least, makes this metal salient point be coupled to corresponding this metal gasket.
7. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein this first substrate is the semiconductor substrate.
8. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein this second substrate is a glass substrate.
9. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein this second substrate is a resin substrate.
10. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein those metal salient points are formed by gold.
11. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein those grooves are rectangle or square.
12. the structure of increase metal connecting line fiduciary level as claimed in claim 11, wherein the minor face of this rectangle is greater than the diameter of those conducting particless.
13. the structure of increase metal connecting line fiduciary level as claimed in claim 11, wherein those rectangles or square groove are arranged with matrix-style.
14. the structure of increase metal connecting line fiduciary level as claimed in claim 6, wherein those conducting particles centers are a polymkeric substance and the peripheral structure that is coated with metallic conductor.
15. the structure of increase metal connecting line fiduciary level as claimed in claim 14, wherein this metallic conductor is gold, nickel or tin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410002974XA CN100416343C (en) | 2004-01-21 | 2004-01-21 | Structure for increasing reliability of metal connecting line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410002974XA CN100416343C (en) | 2004-01-21 | 2004-01-21 | Structure for increasing reliability of metal connecting line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1558270A CN1558270A (en) | 2004-12-29 |
| CN100416343C true CN100416343C (en) | 2008-09-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410002974XA Expired - Fee Related CN100416343C (en) | 2004-01-21 | 2004-01-21 | Structure for increasing reliability of metal connecting line |
Country Status (1)
| Country | Link |
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| CN (1) | CN100416343C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465424A (en) * | 2014-12-12 | 2015-03-25 | 南通富士通微电子股份有限公司 | Method for manufacturing metal bumps |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100345292C (en) * | 2005-11-02 | 2007-10-24 | 友达光电股份有限公司 | Chip pressing structure and its shaping method and electronic installation |
| TWI351670B (en) | 2006-05-18 | 2011-11-01 | Au Optronics Corp | Signal transmission assembly and display panel app |
| CN100458508C (en) * | 2006-06-12 | 2009-02-04 | 友达光电股份有限公司 | Signal transmission assembly and display using same |
| KR100918052B1 (en) * | 2008-03-07 | 2009-09-22 | 삼성에스디아이 주식회사 | Plasma display device |
| JP2015179831A (en) * | 2014-02-27 | 2015-10-08 | デクセリアルズ株式会社 | Connection body, manufacturing method of the same, and inspection method of the same |
| CN108987439A (en) * | 2018-06-21 | 2018-12-11 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN113169147A (en) * | 2018-12-03 | 2021-07-23 | 深圳市柔宇科技股份有限公司 | Display panel and display module |
| CN112201640A (en) | 2019-07-08 | 2021-01-08 | 群创光电股份有限公司 | Electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5783465A (en) * | 1997-04-03 | 1998-07-21 | Lucent Technologies Inc. | Compliant bump technology |
| JPH10321758A (en) * | 1997-05-23 | 1998-12-04 | Nec Kansai Ltd | Semiconductor device |
| JPH1116946A (en) * | 1997-06-20 | 1999-01-22 | Hitachi Ltd | Mounting method of semiconductor device |
| US6088236A (en) * | 1993-01-28 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a bump having a rugged side |
| CN1266283A (en) * | 1999-03-08 | 2000-09-13 | 精工爱普生株式会社 | Semiconductor device, instllation structure for smeiconductor device, liquid crystal device and electronic device |
| CN1444073A (en) * | 2002-03-13 | 2003-09-24 | 夏普株式会社 | Liquid display deivce and mfg. method thereof |
-
2004
- 2004-01-21 CN CNB200410002974XA patent/CN100416343C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088236A (en) * | 1993-01-28 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a bump having a rugged side |
| US5783465A (en) * | 1997-04-03 | 1998-07-21 | Lucent Technologies Inc. | Compliant bump technology |
| JPH10321758A (en) * | 1997-05-23 | 1998-12-04 | Nec Kansai Ltd | Semiconductor device |
| JPH1116946A (en) * | 1997-06-20 | 1999-01-22 | Hitachi Ltd | Mounting method of semiconductor device |
| CN1266283A (en) * | 1999-03-08 | 2000-09-13 | 精工爱普生株式会社 | Semiconductor device, instllation structure for smeiconductor device, liquid crystal device and electronic device |
| CN1444073A (en) * | 2002-03-13 | 2003-09-24 | 夏普株式会社 | Liquid display deivce and mfg. method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465424A (en) * | 2014-12-12 | 2015-03-25 | 南通富士通微电子股份有限公司 | Method for manufacturing metal bumps |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1558270A (en) | 2004-12-29 |
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Granted publication date: 20080903 Termination date: 20210121 |
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