CN1880008A - 助焊组合物 - Google Patents
助焊组合物 Download PDFInfo
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- CN1880008A CN1880008A CNA2006100846839A CN200610084683A CN1880008A CN 1880008 A CN1880008 A CN 1880008A CN A2006100846839 A CNA2006100846839 A CN A2006100846839A CN 200610084683 A CN200610084683 A CN 200610084683A CN 1880008 A CN1880008 A CN 1880008A
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- scaling powder
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- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 4
- 125000001424 substituent group Chemical group 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims description 47
- 229920005989 resin Polymers 0.000 claims description 42
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- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 3
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- HSHNITRMYYLLCV-UHFFFAOYSA-N 4-methylumbelliferone Chemical compound C1=C(O)C=CC2=C1OC(=O)C=C2C HSHNITRMYYLLCV-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3613—Polymers, e.g. resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/362—Selection of compositions of fluxes
-
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Abstract
包含助焊剂的助焊组合物,其中所述助焊剂是化合物,其具有(i)芳环,(ii)至少一个-OH、-NHR(其中R是氢或低级烷基)或-SH基团,(iii)在芳环上的吸电子或给电子取代基,和(iv)无亚氨基团。
Description
技术领域
[0001]本发明涉及助焊组合物以及它们在电子封装中的应用,特别是在用于倒装片型(flip-chip based)半导体封装和电子组件的无流动底层充填组合物(no-flowunderfill composition)和预施用晶片级底层充填中的应用。在毛细管底层充填工艺(capillary underfill process)之前的回流焊接过程中,这些组合物也具有回流焊料的用途。
背景技术
[0002]在半导体封装操作中,一种用于将集成电路附到基底上的日益重要的方法是所谓的倒装片工艺。在倒装片工艺中,半导体芯片的有效面(active side)用金属焊球(solder ball)形成凸起,并被倒转,这样,焊球可以对准基底上的相应电终端,并与之接触。当焊料被回流而形成与基底的冶金连接时,电路连接得以实现。半导体芯片、焊料和基底的热膨胀系数(CTE)是不同的,这种失配导致对焊料接点(solder joint)产生应力,这最终可导致半导体封装的失效。
[0003]通常被填充有有机或无机填料或间隔物(spacer)的有机材料被用于底层填充芯片和基底之间的间隙,以弥补CTE失配和强化焊接点。通过在回流焊接后沿芯片-基底组件的边沿涂敷底层填充材料,并允许该材料流入芯片与基底之间的间隙,这样的底层填充材料可以通过毛细管效应而被施加。然后固化所述底层填料,一般通过施加热来完成。
[0004]在一个替代的工艺中,将底层填充材料预施用到带有焊料凸块(solderbumped)的半导体晶片上,或者通过印刷,如果该材料是膏的话,或者通过层叠,如果材料是膜的话。晶片被划分为芯片,随后在回流焊接的过程中,单个的芯片被键合到基底上,一般在温度和压力的协助下,这也固化了底层填充材料。
[0005]在另一个被称为无流动的工艺中,基底被预施用以底层填充材料,倒装片被放置在底层填料之上,一般在温度和压力的协助下,回流焊料,以实现芯片与基底之间的互联。这些条件可以固化底层填充材料。尽管有时附加的固化步骤是必需的。一般在热压键合装置上,在可以短至几秒的时间期间内完成此回流工艺。
[0006]在所有这三种底层填充操作中,关键的是在回流操作之前或者回流操作过程中,焊料必须被熔化,以去除存在的任何金属氧化物,因为金属氧化物的存在阻碍了焊料的回流、焊料对基底的浸润以及电路连接。对于毛细流操作,在加入毛细流底层填料之前,进行助焊以及焊剂残余物的去除。对于无流动和预施用底层填料操作而言,一般将助焊剂(fluxing agent)加入底层填充材料中。
[0007]目前很多的无流动底层填料树脂是基于环氧树脂化学,其通过使用羧酸或酸酐实现焊料助焊。有机醇有时被用作促进剂,因为它们可以与酸酐反应形成羧酸,这些羧酸又可以熔融焊料。来自酸酐的羧酸在热压键合工艺中是挥发性的,可能导致半导体封装的腐蚀。
[0008]此外,基于酸酐的助焊剂(fluxing agent)不适合对酸类敏感的化学物,例如基于氰酸酯的底层填料树脂。越具反应活性的酸酐越具有侵入性,这引起树脂单体和低聚物增长(advance),导致短的树脂贮存期以及在固化期间形成空隙。这种空隙化可以不利地影响焊球与基底之间的互联,引起短路和连接失效。
附图简述
[0009]图1至5是焊点互联的扫描电子显微镜照片,以及在支撑这些互联的底层填充组合物中所使用的助焊剂的图。图6是作为电路的焊盘上共晶焊料的声学扫描。
发明概述
[0010]本发明是助焊组合物(fluxing composition),包括助焊剂(fluxing agent),其中助焊剂为化合物,其具有(i)芳环,(ii)至少一个-OH、-NHR(其中R是氢或低级烷基)或-SH基团,(iii)在芳环上的吸电子或给电子取代基,和(iv)无亚氨基团。对于本说明书和权利要求书的目的而言,芳族被认为是包括5元和6元环结构,包括杂环结构,其具有离域的4n+2π电子。芳环可以与一个或多个脂族或其它芳族环结构稠合。在助焊剂上的-OH、-NH或-SH基团质子具有大约在5至14范围内的pKa值,并且又可以作为金属或金属性材料的焊剂。
发明详述
[0011]用在本发明的助焊组合物中的助焊剂在化合物的芳环部分上具有吸电子或给电子基团。示例性吸电子基团对于本领域技术人员而言是已知的,包括:-C6H5、-N(CH3)3 +、-NO2、-CN、-SO3H、-COOH、-CHO、-COR和-X(卤素)。示例性给电子基团对于本领域技术人员而言是已知的,包括:-NHR、-OH、-OCH3、-NHCOCH3、-CH3(其中R是氢或低级烷基)。在存在有吸电子基团的这些化合物中,-OH、-NHR或-SH质子离解的能力被增加,从而,作为焊剂它们表现良好。在存在有给电子基团的这些化合物中,化合物作为金属氧化物的还原剂的能力得以增加,从而,作为焊剂它们表现良好。因此,本发明人相信,在本发明中所发现的助焊剂助焊机理(fluxing mechanism)很可能是助焊剂与焊料金属氧化物之间的酸/碱化学与氧化还原化学的混合。
[0012]满足本发明的助焊组合物的助焊剂的定义的示例性化合物包括但不限于下列化合物。对其中的一些化合物进行了助焊性能(fluxing performance)试验,如在实施例1中所述,并且在这些化合物的式子下面,报告了焊料球塌陷时的时间,以秒(secs)作为单位。
[0037]在一个实施方案中,助焊组合物可以被用于在毛细作用底层填充工艺中熔融焊料(flux solder),如在本说明书的背景技术章节所述。在该情况下,助焊组合物包括助焊剂或几种助焊剂的组合、溶剂或几种溶剂的组合以及任选的添加剂,例如分散剂和消泡剂。
[0038]当用在毛细流操作(capilliary flow operation)中时,助焊剂的热稳定性应当足以抵抗焊料被回流时升高的温度。焊料回流温度将取决于焊料组成,并且将随实际的冶金而变化。通过加热焊料直到其回流,实践者能够确定焊料回流温度。通过热重分析(TGA)——一种在本领域技术人员的专业范围内的技术,可以容易地估计确定助焊剂的热稳定性。
[0039]在另一个实施方案中,本发明的助焊组合物包括一种或多种树脂;可选地包括针对这些树脂的一种或多种固化剂;和可选地包括导电或不导电填料。可固化树脂以10至99.5重量%的量存在;固化剂,如果存在,以可达30重量%的量存在,填料,如果存在,以可达80重量%的量存在;并且助焊剂将以0.5至30重量%的量存在。
[0040]用于助焊组合物的合适的树脂包括但不限于环氧树脂、聚酰胺、苯氧基树脂、聚苯并嗪、丙烯酸酯、氰酸酯、双马来酰亚胺、聚醚砜、聚酰亚胺、苯并嗪、乙烯基醚、硅化烯烃(siliconized olefin)、聚烯烃、polybenzoxyole、聚酯、聚苯乙烯、聚碳酸酯、聚丙烯、聚氯乙烯、聚异丁烯、聚丙烯腈、聚甲基丙烯酸甲酯、聚乙酸乙烯酯、聚2-乙烯吡啶、顺式-1,4-聚异戊二烯、3,4-聚氯丁二烯、乙烯基共聚物、聚环氧乙烷、聚乙二醇、聚甲醛、聚乙醛、poly(b-propiolacetone)、聚10-癸酸酯、聚对苯二甲酸乙二酯、聚己内酰胺、聚11-十一酰胺(poly(11-undecanoamide))、聚对苯二甲酸间苯二酰胺、聚四亚甲基间苯磺酰胺、聚酯型聚丙烯酸酯、聚苯醚、聚苯硫醚、聚砜、聚醚酮、聚醚酰亚胺、氟化聚酰亚胺、聚酰亚胺硅氧烷、聚异吲哚并喹唑啉二酮、聚硫醚酰亚胺(polythioetherimide)、聚苯基喹喔啉、polyquinixalone、酰亚胺-芳基醚苯基喹喔啉共聚物、聚喹喔啉、聚苯并咪唑、聚苯并唑、聚降冰片烯、聚芳撑醚(poly(aryleneether))、聚硅烷、聚对二甲苯、苯并环丁烯、羟基苯并唑共聚物、poly(silarylenesiloxanes)和聚苯并咪唑。
[0041]在一个实施方案中,合适的树脂包括氰酸酯、环氧树脂、双马来酰亚胺、甲基丙烯酸酯、以及这些化合物中的一种或多种的组合。在另外的实施方案中,树脂是氰酸酯,其可以被用在这些组合物中,因为助焊剂已进行选择而具有弱的酸性。已知氰酸酯对酸性环境敏感,因此,其还未频繁地用在含有助焊剂的底层填料组合物中。因此,在一个实施方案中,本发明是这样的助焊组合物,其包含氰酸酯树脂、用于氰酸酯树脂的固化剂、本文所述的助焊剂以及任选的导电或不导电填料。
[0042]合适的氰酸酯树脂包括那些具有一般结构
的树脂,其中n是1或更大,X是烃基团。示例性的X实体包括但不限于双酚A、双酚F、双酚S、双酚E、双酚O、苯酚或甲酚线型酚醛清漆、二环戊二烯、聚丁二烯、聚碳酸酯、聚氨酯、聚醚或聚酯。商业可得的氰酸酯材料包括:AroCy L-10、AroCy XU366、AroCy XU371、AroCy XU378、XU71787.02L和XU71787.07L,供应自HuntsmanLLC;Primaset PT30、Primaset PT30S75、Primaset PT60、Primaset PT60S、PrimasetBADCY、Primaset DA230S、Primaset MethylCy和Primaset LECY,供应自LonzaGroup Limited;2-烯丙基苯酚氰酸酯、4-甲氧基苯酚氰酸酯、2,2-双(4-氰氧基苯酚)-1,1,1,3,3,3-六氟丙烷、双酚A氰酸酯、二烯丙基双酚A氰酸酯、4-苯基苯酚氰酸酯、1,1,1-三(4-氰氧基-苯基)乙烷、4-枯基酚氰酸酯、1,1,-二-(4-氰氧基-苯基)乙烷、2,2,3,4,4,5,5,6,6,7,7-十二氟辛二醇二氰酸酯和4,4′-双酚氰酸酯,供应自OakwoodProducts,Inc.。
[0043]合适的环氧树脂包括双酚、萘和脂族型环氧树脂。商业可得的材料包括双酚型环氧树脂(Epiclon 830LVP、830CRP、835LV、850CRP),供应自Dainippon Ink& Chemicals,Inc.;萘型环氧树脂(Epiclon HP4032),供应自Dainippon Ink &Chemicals,Inc.;脂族环氧树脂(Araldite CY179、184、192、175、179),供应自Ciba Specialty Chemicals;(环氧树脂1234、249、206),供应自Dow;和(EHPE-3150),供应自Daicel Chemical Industries,Ltd.。其它合适的环氧树脂包括脂环系环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、环氧-线型酚醛树脂、联苯型环氧树脂、萘型环氧树脂、二环戊二烯苯酚(dicyclopentadienephenol)型环氧树脂。
[0044]合适的马来酰亚胺树脂包括那些具有一般结构
的化合物,其中n是1至3,X1是脂族或芳族基团。示例性的X1实体包括聚丁二烯、聚碳酸酯、聚氨酯、聚醚、聚酯、简单烃和含有诸如羰基、羧基、酯、酰胺、氨基甲酸酯、脲或醚的官能团的烃。这些类型的树脂是商业可得的,可以从例如Dainippon Ink andChemical,Inc.获得。
[0045]另外的合适的马来酰亚胺树脂包括但不限于固体芳族双马来酰亚胺树脂,特别是那些具有结构
的树脂,其中Q是芳香基团;示例性芳香基团包括:
具有这些Q桥连基团的马来酰亚胺树脂是商业可得的,可以从例如Sartomer(美国)或HOS-Technic GmbH(澳大利亚)获得。
[0046]其它合适的马来酰亚胺树脂包括下列物质:
其中C36代表36个碳原子的直链或支链烃链(具有或没有环状部分);
[0047]合适的丙烯酸酯和甲基丙烯酸酯树脂包括那些具有一般结构
的树脂,其中n是1至6,R1是-H或-CH3,X2是芳族或脂族基团。示例性的X2实体包括聚丁二烯、聚碳酸酯、聚氨酯、聚醚、聚酯、简单烃以及含有诸如羰基、羧基、酰胺、氨基甲酸酯、脲或醚的官能团的简单烃。商业可得的材料包括(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸n-月桂酯、(甲基)丙烯酸烷基酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸n-硬脂醇酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸四氢糠酯、(甲基)丙烯酸2-苯氧乙酯、(甲基)丙烯酸异冰片酯、1,4-丁二醇二(甲基)丙烯酸酯、二(甲基)丙烯酸1,6-己二醇酯、1,9壬二醇二(甲基)丙烯酸酯(1,9-nonandiol di(meth)acrylate)、(甲基)丙烯酸全氟辛基乙酯(perfluorooctylethyl(meth)acrylate)、1,10-癸二醇二(甲基)丙烯酸酯(1,10-decandiol di(meth)acrylate)、壬基苯酚聚丙氧基化聚(甲基)丙烯酸酯(nonylphenol polypropoxylate(meth)acrylate)以及polypentoxylatetetrahydrofurfuryl acrylate,供应自Kyoeisha Chemcial Co.,LTD;聚丁二烯氨基甲酸酯二甲基丙烯酸酯(CN302、NTX6513)和聚丁二烯二甲基丙烯酸酯(CN301、NTX6039、PRO6270),供应自Sartomer Company,Inc.;聚碳酸酯氨基甲酸酯二丙烯酸酯(ArtResin UN9200A),供应自Negami Chemical Industries Co.,LTD;丙烯酸酯化脂族氨基甲酸酯低聚物(acrylated aliphatic urethane oligomer)(Ebecryl 230、264、265、270、284、4830、4833、4834、4835、4866、4881、4883、8402、8800-20R、8803、8804),供应自Radcure Specialities Inc.;聚酯丙烯酸酯低聚物(Ebecryl 657、770、810、830、1657、1810、1830),供应自Radcure Specialities,Inc.;和环氧丙烯酸酯树脂(CN104、111、112、115、116、117、118、119、120、124、136),供应自Sartomer Company,Inc.。在一个实施方案中,丙烯酸酯树脂选自丙烯酸异冰片酯、甲基丙烯酸异冰片酯、丙烯酸月桂酯、甲基丙烯酸月桂酯、带有丙烯酸酯官能团的聚丁二烯以及带有甲基丙烯酸酯官能团的聚丁二烯。
[0048]合适的乙烯基醚(viny ether)树脂是任何含乙烯基醚官能团的树脂,包括聚丁二烯、聚碳酸酯、聚氨酯、聚醚、聚酯、简单烃和含有诸如羰基、羧基、酰胺、氨基甲酸酯、脲或醚的官能团的烃。商业可得的树脂包括环己烷二甲醇二乙烯基醚、十二烷基乙烯基醚、环己基乙烯基醚、2-乙基己基乙烯基醚、二丙二醇二乙烯基醚、己二醇二乙烯基醚、十八烷基乙烯基醚和丁二醇二乙烯醚,供应自International Speciality Products(ISP);Vectomer4010、4020、4030、4040、4051、4210、4220、4230、4060、5015,供应自Sigma-Aldrich,Inc.。
[0049]取决于在助焊组合物中所使用的实际树脂,固化剂可以是但不限于下列物质的一种或多种:胺、三嗪、金属盐、芳族羟基化合物。固化剂的例子包括咪唑,例如2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、2-苯基咪唑、2-乙基4-甲基咪唑、1-苄基-2-甲基咪唑、1-丙基-2-甲基咪唑、1-氰基-乙基-2-甲基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基乙基-2-苯基咪唑、1-胍氨基乙基-2-甲基咪唑以及咪唑与1,2,4-苯三酸的加成产物;叔胺,例如N,N-二甲基-苄胺、N,N-二甲基苯胺、N,N-二甲基-甲苯胺、N,N-二甲基-对甲氧基苯胺、对-卤代-N,N-二甲基苯胺、2-N-乙基苯胺基乙醇、三正丁胺、吡啶、喹啉、N-甲基吗啉、三乙醇胺、三乙二胺、N,N,N′,N′-四甲基丁烷二胺、N-甲基哌啶;酚类,例如苯酚、甲酚、二甲苯酚、间苯二酚、酚醛树脂和间苯三酚;有机金属盐,例如环烷酸铅、硬脂酸铅、环烷酸锌、辛酸锌(zinc octolate)、油酸锡、顺丁烯二酸二丁基锡、环烷酸锰、环烷酸钴和乙酰丙酮铁(acetyl aceton iron);其它金属化合物,例如金属乙酰丙酮酸盐、金属辛酸盐(metal octolates)、金属乙酸盐、金属卤化物、金属咪唑络合物(metal imidazole complex)、Co(II)(乙酰丙酮酸)、Cu(II)(乙酰丙酮酸)、Mn(II)(乙酰丙酮酸)、Ti(乙酰丙酮酸)和Fe(II)(乙酰丙酮酸);胺络合物(aminecomplex);无机金属盐,例如氯化锡、氯化锌和氯化铝;过氧化物,例如过氧化苯甲酰、月桂酰过氧化物、辛酰过氧化物、过辛酸丁酯(butyl peroctoate)、过氧化二枯基、过氧化乙酰、对氯过氧化苯甲酰和二-叔丁基邻羧酸过苯二甲酸酯(di-t-butyl diperphthalate);酸酐,例如马来酸酐、邻苯二甲酸酐、月桂酸酐、1,2,4,5-苯四酸酐、1,2,4-苯三酸酐、六氢邻苯二甲酸酐、六氢均苯四酸酐(hexahydropyromellitic anhydride)和六氢偏苯三酸酐(hexahydrotrimelliticanhydride);偶氮化合物,例如偶氮异丁腈、2,2′-偶氮二丙烷、m,m′-氧化偶氮苯乙烯(m,m′-azoxystyrene)、腙(hydrozones);己二酸二酰肼(adipic dihydrazide)、二烯丙基三聚氰胺、diamino malconnitrile和BF3-胺络合物;以及它们的混合物。
[0050]固化剂可以是自由基引发剂或离子引发剂(或者阳离子或者阴离子),这取决于所选择的是自由基还是离子固化树脂,固化剂以有效量存在。对于自由基固化剂而言,有效量一般为按有机化合物(不包括任何填料)的重量计算的0.1至10%。优选的自由基引发剂包括过氧化物,例如过辛酸丁酯、过氧化二枯烯基,以及偶氮化合物,例如2,2′-偶氮二(2-甲基-丙腈)和2,2′-偶氮二(2-甲基-丁腈)。对于离子固化剂或引发剂而言,有效量一般为按有机化合物(不包括任何填料)的重量计算的0.1至10%。优选的阳离子固化剂包括双氰胺、线型酚醛树脂、己二酸二酰肼、二烯丙基三聚氰胺、diamino malconitrile、BF3-胺络合物、胺盐和改性咪唑化合物。
[0051]在一些情况下,使用不止一种类型的固化可能是被期望的。例如,阳离子和自由基引发可能都是期望的,在该情况下,自由基固化和离子固化树脂可以被用在组合物中。例如,这样的组合物将允许固化过程通过使用紫外光照射的阳离子引发而开始,并且在后来的处理步骤中,通过应用热的自由基引发而结束。
[0052]在一些情况下,例如在氰酸酯系统中,通过使用固化促进剂,可以最优化固化率。固化促进剂包括但不限于金属环烷酸盐、金属乙酰丙酮酸盐(螯合物)、金属辛酸盐、金属乙酸盐、金属卤化物、金属咪唑络合物、金属胺络合物、三苯膦、烷基取代的咪唑、咪唑盐及硼酸盐(onium borate)。
[0053]当使用固化步骤时,固化温度一般在80°-250℃的范围内,并且固化将在数秒或可达120分钟的时间期间内完成,这取决于具体的树脂化学和所选择的固化剂。每种胶粘剂组合物的时间和温度固化特征会有所变化,并且不同的组合物可以被设计为提供适合具体工业制造工艺的固化特征(curing profile)。
[0054]取决于终端应用,可以将一种或多种填料包括在组合物中,并且通常被加入是用于改进流变性质和减小应力。对于底层填充应用,填料将是不导电的。合适的不导电填料的例子包括氧化铝、氢氧化铝、二氧化硅、蛭石、云母、硅灰石、碳酸钙、二氧化钛、沙子、玻璃、硫酸钡、锆、炭黑、有机填料;和卤化乙烯聚合物,例如四氟乙烯、三氟乙烯、偏二氟乙烯、乙烯基氟、偏二氯乙烯和乙烯基氯。
[0055]填料颗粒可以是任何合适的尺寸,其在纳米级至数mm范围内变化。用于任何具体终端用途的此类尺寸的选择在本领域技术人员的专业范围之内。填料可以以按总组合物的重量计算从10至90%的量存在。在组合物中可以使用不止一种填料,并且填料可以进行或没有进行表面处理。适合的填料尺寸可以被实践者确定,但是一般而言,在20纳米至100微米的范围内。
实施例
[0056]实施例1.在本实施例中,对各种化合物作为直接应用于焊料的焊剂的性能进行了测试——如在毛细流操作之前所进行的。性能被测定,以助焊剂塌陷焊球(collapse solder ball)所需要的时间来表示,单位为秒。使用铜或镀金铜试样作为基底,焊料为具有217℃的熔点的无铅Sn99.5Cu3.8Ag0.7焊料。(焊料的熔点会有所变化,取决于实际冶金)。在热板(hotplate)上,基底试样被预热到240℃(该温度高于焊料的熔点),将5至10mg助焊剂滴到加热的热板上,然后将足够形成焊球的四至六粒焊料滴到该助焊剂上。当焊球开始熔融时,其快速塌陷并融合成显示光泽表面的焊块(solder glob)。在所有被测试的实施例中观察到了这种反应,记录了在焊球塌陷之前所经历的时间。在本说明书的上文中报告了一些结果;其它结果报告在表1中。
[0057]表1
助焊剂和助焊性能
在240℃,熔融的时间(秒(sec))
[0058]实施例2.无流动助焊组合物
在本实施例中,测试了在无流动助焊底层填料组合物中的助焊剂。使用热压Toray键合机,建立凸起芯片(bumped die)与基底之间的电路互联,制备焊料凸起芯片和基底的组装件。将助焊组合物涂敷到BT基底上,所述基底被覆盖以阻焊剂(solder mask),并具有为镀到Cu上的Ni/Au的暴露痕量(exposed trace)。将用Sn95.5Cu3.8Ag0.7焊料凸点凸起的硅芯片(5×5mm)与基底上的暴露痕量对齐。将基底加热到80℃,在热压键合机中,芯片和基底在20牛顿的压力下接触。然后以倾斜上升式,在1-2秒内将芯片从200℃加热至220℃,并在220℃保持5-6秒,以形成硅芯片与基底的组装件。通过使用Agilent 34401 Digit Multimeter测量电路的电阻,证实焊接点的电连接。
[0059]使用两种助焊组合物进行试验,其被命名为平台A,公开在表2中,或者平台B,公开在表3中。这些平台的对照制剂与报告的相同,只是所述对照不含助焊剂。两种对照制剂都没有在热压键合工艺中建立互联,这表明焊料在缺乏助焊剂的情况下不熔融。
[0060]本发明的助焊组合物,平台A和平台B,用选择的助焊剂(fluxing agent)配制,并且在所有情况下,都可以观察到熔融。通过扫描电子显微术(SEM)(Hitachi S-3000N)检查焊接点的质量。
[0061]平台A配方和结果。
具有结构
的助焊剂被独立地配制到平台A组合物中,以制备如在表2中所示的助焊组合物。
[0062]
表2.平台A:环氧树脂/氰酸酯制剂(百分比按重量计算) | ||
助焊剂 | 5% | Sigma-Aldrich |
环氧树脂 | 13.36% | Epiclon 830CRP(Dainippon Ink Chemical) |
氰酸酯 | 10.08% | XU71787.07L(Dow Chemical) |
氰酸酯 | 7.56% | Primaset LECY(Lonza) |
环氧树脂 | 10.0% | 双酚F/表氯醇RSL-1739(Resolution PerformanceProducts) |
环氧树脂 | 3.92% | Epiclon N-730A(Dainippon Ink Chemical) |
催化剂 | 0.08% | 乙酰丙酮酸钴(II)(98%,Sigma-Aldrich) |
流变改性剂 | 0.01% | Modaflow树脂改性剂(Solutia Inc.) |
填料 | 50% | Admafine Silica SO-E5(Admatechs Company,Ltd.) |
[0063]在热压键合之后立刻检查互联,并在160℃进一步固化两小时之后再次检查互联。电互联在固化前和固化后几乎没有变化,两种组装件都通过了电测试,表明有电连接。SEM照片被显示在图1中,显示了良好的焊料湿润(solder wetting)和焊接点质量。在没有使用助焊剂的情况下,平台A树脂不能实现焊料熔融,硅芯片和基底组装没有通过电测试。
[0064]平台B配方和结果。
[0065]
表3:平台B:环氧树脂组合物(百分比按重量计算) | ||
助焊剂 | 5% | Sigma-Aldrich |
环氧树脂 | 25% | 双酚F/表氯醇环氧树脂内部材料(epichlorohydrin epoxy internal material)(National Starch and Chemical Co.) |
环氧树脂 | 15.0% | 双酚F/表氯醇RSL-1739(Resolution Performance Products) |
环氧树脂 | 4.5% | 三(2,3-环氧丙基)异氰尿酸酯(Sigma-Aldrich) |
硅烷粘合促进剂 | 0.13% | Z6040w Corning |
消泡剂 | 0.01% | BYK-A-500(BYK Chemie USA,Inc.) |
咪唑催化剂 | 0.15% | 苯基甲基咪唑,10微米颗粒(National Starchand Chemical) |
流变改性剂 | 0.1% | Disperbyk-1080(BYK Chemie USA,Inc.) |
防沫剂 | 0.0005% | Antifoam 1400(Dow Corning) |
填料 | 50% | Admafine Silica SO-E5(Admatechs Company,Ltd.) |
[0066]根据在实施例2中所述的步骤测试助焊组合物。在热压键合之后立刻检查互联,并在160℃进一步固化两小时之后再次检查互联。电互联在固化前和固化后几乎没有变化,两种组装件都通过了电测试,表明有电路连接。SEM照片被显示在图2中,显示了良好的焊料湿润和焊接点质量。在没有未使用助焊剂的情况下,平台B树脂不能实现焊料熔融,硅芯片和基底组装件没有通过电测试。
[0067]具有液体和固体助焊剂的平台B具有结构
的液体助焊剂和具有结构
的高熔点(>272℃)固体助焊剂被独立配制到平台B树脂组合物中,以制备两种助焊组合物。根据在实施例2中所述的步骤测试助焊组合物。在热压键合之后立刻检查互联,并在160℃进一步固化两小时之后再次检查互联。电互联在固化前和固化后几乎没有变化,两种组装件都通过了电测试。注意到,尽管具有272℃高熔点的固体助焊剂在室温下不溶于平台B组合物中,然而在220℃的键合温度下,它变得充分可溶的,并且能够熔融焊料,从而允许产生良好互联。SEM照片被显示在图3中,显示了良好的焊料湿润和焊接点质量。
[0068]实施例3.毛细流底层填料,共晶焊料。在进行如在本说明书的背景技术章节所述的回流焊接(solder reflow)和毛细流底层填充(capillary flow underfill)操作之前,用助焊剂涂刷两块BT基底和两个10×10mm的硅芯片,所述BT基底被阻焊剂覆盖并具有镀在Cu上的Ni/Au的暴露痕量,所述硅芯片带有共晶焊料Pb63Sn37凸起。一套部件用售自Kester、产品编号为6502的商业助焊剂涂刷。另一套用包含3-羟基-2-甲基-4-吡喃酮
的三丙二醇溶液(3%w/w)的助焊剂涂刷。在空气中干燥所述部件,并使用GSM倒装片芯片键合机将芯片键合到基底上。通过使用Agilent 34401Digit Multimeter测量电路的电阻,证实焊接点的电连接。毛细流底层填料——其为包含氰酸酯树脂的专门组合物,沿芯片的边沿被涂敷,并允许其在芯片和基底之间流动。然后在165℃将部件固化2小时。再次检查电连接,并使用光学显微术和扫描声学显微术检验所述部件,以检查焊剂残留和空隙。商业助焊剂显示出与氰酸酯树脂的过度反应,导致严重的焊剂残留和空隙,特别是在焊料区附近。
[0069]相反,如在图4的SEM照片中可以看到的,3-羟基-2-甲基-4-吡喃酮显示没有任何焊剂残留,也没有观察到空隙。使用4-甲基伞形酮(Aldrich Cat.No.M1381)(在三丙二醇中,2%w/w)和使用4-氰基酚的双丙二醇甲基醚溶液(46%w/w)作为助焊剂,获得了同样的结果:无残留物,无空隙。
[0070]实施例4.毛细流底层填料,无铅焊料。在此进行了与在实施例3中所进行的相同的试验,只是使用在双丙二醇甲基醚中的4-氰基酚(46%w/w)作为助焊剂,焊料是无铅焊料Sn95.5Cu3.8Ag0.7。商业助焊剂Kester 6502再次导致严重的焊剂残留,特别是在焊料区附近,原因在于其与氰酸酯树脂的反应。相反,使用4-氰基酚作助焊剂显示没有任何焊剂残留。仅观察到非常少的空隙。SEM照片被示于图5中。
[0071]实施例5.毛细管流,高铅焊料。
在此进行了与在实施例3中所进行的相同的试验,只是芯片用高铅焊料Pb95Sn5形成凸起,和助焊剂是在双丙二醇甲基醚中的4-氰基酚的溶液(46%w/w)。对照助焊剂是Cookson的产品EB399。在该情况中的基底是具有在焊盘上的焊料电路的BT。根据截面检验,两种封装都显示无焊剂残留。然而,使用EB399作助焊剂导致空隙,大概是由于其与氰酸酯树脂的挥发性反应产物所致。相反,正如可以从图6中的声学扫描照片可以观察到的,用4-氰基酚处理的组装件显示无任何空隙。
Claims (12)
1.助焊组合物,其包含助焊剂,其中所述助焊剂是化合物,其具有(i)芳环,(ii)至少一个-OH、-NHR(其中R是氢或低级烷基)或-SH基团,(iii)在芳环上的吸电子或给电子取代基,和(iv)无亚氨基团。
2.根据权利要求1所述的助焊组合物,进一步包括热固性树脂。
3.根据权利要求2所述的助焊组合物,其中所述热固性树脂选自氰酸酯、环氧树脂、马来酰亚胺、双马来酰亚胺、丙烯酸酯、甲基丙烯酸酯、乙烯基醚或者它们的混合物。
4.根据权利要求3所述的助焊组合物,其中所述热固性树脂是氰酸酯。
5.根据权利要求3所述的助焊组合物,其中所述热固性树脂是环氧树脂。
6.根据权利要求3所述的助焊组合物,其中所述热固性树脂是氰酸酯和环氧树脂的掺合物。
7.根据权利要求2所述的助焊组合物,进一步包括不导电填料。
8.根据权利要求6所述的助焊组合物,其中所述填料选自未处理的二氧化硅、处理的二氧化硅、未处理的氧化铝和处理的氧化铝。
9.根据权利要求2所述的助焊组合物,进一步包括固化剂或催化剂,其选自过渡金属催化剂、芳香胺、脂族胺和有机过氧化物。
10.根据权利要求8所述的助焊组合物,其中所述过渡金属催化剂选自过渡金属络合物和有机金属络合物。
11.根据权利要求9所述的助焊组合物,其中所述催化剂选自Co(II)(乙酰丙酮酸)、Cu(II)(乙酰丙酮酸)、Mn(II)(乙酰丙酮酸)、Ti(乙酰丙酮酸)和Fe(II)(乙酰丙酮酸)。
12.根据权利要求10所述的助焊组合物,其中所述芳香胺选自咪唑、吡唑、三唑、氨基苯、脂族胺和芳香胺。
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US11/144,571 US20060272747A1 (en) | 2005-06-03 | 2005-06-03 | Fluxing compositions |
US11/144,571 | 2005-06-03 |
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EP (1) | EP1728585A1 (zh) |
JP (1) | JP5345278B2 (zh) |
KR (1) | KR101265988B1 (zh) |
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JP2006334669A (ja) | 2006-12-14 |
EP1728585A1 (en) | 2006-12-06 |
KR101265988B1 (ko) | 2013-05-22 |
TW200709886A (en) | 2007-03-16 |
KR20060126405A (ko) | 2006-12-07 |
SG127852A1 (en) | 2006-12-29 |
US20080023108A1 (en) | 2008-01-31 |
TWI435786B (zh) | 2014-05-01 |
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US20060272747A1 (en) | 2006-12-07 |
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