CN1862353A - Method for making surface period minute structure and apparatus thereof - Google Patents
Method for making surface period minute structure and apparatus thereof Download PDFInfo
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- CN1862353A CN1862353A CN 200610085343 CN200610085343A CN1862353A CN 1862353 A CN1862353 A CN 1862353A CN 200610085343 CN200610085343 CN 200610085343 CN 200610085343 A CN200610085343 A CN 200610085343A CN 1862353 A CN1862353 A CN 1862353A
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Abstract
The present invention relates to a method for forming periodic microrough structure on the material surface by adopting laser interference photoetching process and its equipment. Said equipment includes the following several portions: laser, band-pass filter, electronic optical gate, beam expander, beam splitter prism, focusing lens, three-dimensional drive working table and computer control system. Said invention also provides the concrete steps of its processing method.
Description
Technical field
The present invention relates to material science and Laser Micro-Machining field, refer in particular to and adopt laser interference photolithography technology that material surface is carried out a kind of method and the device that microfabrication forms periodicity micro-rough structure, applicable to materials such as multiple metal, inorganic non-metallic and compounds thereof.
Background technology
Periodically the preparation and the performance thereof of the material of micro-rough structure are the important topics of lot of domestic and foreign scholar further investigation always to have cross-scale surface.Realize the ultra-hydrophobicity of material surface by the compound coarse structure of making the micro-nano-scale combination at material surface, the self-cleaning characteristic that can make material have to be unsurpassed in excellence, the ability such as anti-pollution, anti-oxidant, anticorrosive, anti-aging of material will improve greatly.This research direction derives from the discussion of people to " lotus leaf effect " of biological surface at first, people find under study for action, many biological surfaces have stratum's composite structure that micron combines with nanophase, and the many just biological surfaces of the bilayer of this micro-nano-scale combination or MULTILAYER COMPOSITE coarse structure have the basic reason of ultra-hydrophobicity.Henceforth, the surface wettability of reflection biological surface key character just progressively develops into the research focus of physics and field of biology.
Influence the infiltrating factor of solid surface and mainly contain two, be i.e. surface free energy and surfaceness.Therefore, in commercial production and daily life, have wide application prospect super hydrophobic surface (with the contact angle of water greater than 150 °) generally can be by two kinds of methods preparations, a kind of be hydrophobic material (with the contact angle of water greater than 90 °) surface makes up the micro-rough structure; Another kind is a material of modifying low-surface-energy on rough surface.Studies show that, even have minimum surface can smooth surface, it also only has about 119 ° with the contact angle of water, thereby structure micro-rough structure just becomes the effective method the most that makes material surface acquisition ultra-hydrophobicity.
The method that has occurred at present the surperficial fine coarse structure of many making, for example plasma processing method, anodizing, carbon nano tube growth method, phase separation method and laser ablation method etc.Wherein the laser ablation method is used for material surface microstructure processing and is of long duration with the research that realizes the material surface hydrophobic performance, and it progressively is applied in the making of silicon-based semiconductor product now.
The laser ablation technology is to adopt the high energy pulse laser beam fine sulculus that scanning obtains having the certain width and the degree of depth to material surface, to improve the wetting property of material surface.It has noncontact, pollution-free and can realize characteristics such as micro-nano-scale retrofit, proposes at the excimer laser process technology in the eighties in 20th century the earliest.Along with the raising of laser instrument quality and the improvement of control system, the laser ablation technology has obtained application more and more widely especially.
Laser interference photolithography technology in the laser ablation method is the forward position research topic of Micrometer-Nanometer Processing Technology and microelectronic.Laser interference photolithography technology utilizes interference of light and diffraction characteristic exactly, regulates and control light intensity distributions in the interference field by specific light beam array mode, and notes with photosensitive material, thereby produces litho pattern on matrix material.The people such as C.Daniel of Germany discover that at the silicon chip surface acquisition periodicity micro nano structure of plated film laser interference can cause the micro nano structure reorganization of metal surface to adopting laser interferometry.Doctor Zhang Jin of Sichuan University has also carried out calculating simulation and experiment discussion to laser interference photolithography technology, also carried out the Preliminary Applications research of interference photoetching technology, her achievement in research has great theoretical direction and reference for adopting laser interference photolithography technology to carry out the surface micro-structure manufacturing.
Compare with laser interferometry, there is certain limitation in other conventional laser lithographic techniques, the main performance in the following areas:
Resolution is low.Traditional laser ablation technology generally adopts the mask projection imaging technique to obtain the etching figure, and its resolution is exposed the restriction of wavelength and imaging system numerical aperture, further advances difficulty of etching limiting proportion.
Working (finishing) area is little, the cost height.The conventional laser lithographic technique is in order to improve resolution, the exposure visual field has to be confined in the very little scope, actual adding, will arrive bigger matrix surface by field scan with the etching figure of little " visual field " man-hour, and this needs to be equipped with complicated processing positioning system, has increased the cost of process equipment greatly.
Use limited.Because the intrinsic optical characteristics of conventional laser etching system, its exposure area is little, and adds and be difficult to obtain multidimensional figure clearly man-hour, has limited the application aspect the processing of large scale substrate material surface fine microstructure greatly.
Summary of the invention
The purpose of this invention is to provide a kind of obtain method and device the surface periodic coarse structure, that be better than the conventional laser lithographic technique, it is to use to transfer Q ps pulsed laser and ns pulsed laser device to realize that multi-beam interference photoetching directly carries out microfabrication to material surface.
The present invention realizes according to following scheme:
Open laser instrument, be divided into multi-beam by beam splitter after making the laser beam of sending by laser instrument pass through band pass filter, electronics optical gate, beam expander, light beam after the beam splitting is regulated optical path difference to satisfy coherent condition by optical delay, and last line focus mirror focuses on the back acting in conjunction in being placed on the three-dimensional processed sample surface that drives on the worktable.Realize the break-make of light path in the operation by the switch of computer control system control electronics optical gate.Can also according to processing request by computer control system drive three-dimensional drive fine motion adjusting that worktable realize processed sample after exposure is finished at every turn, expose again, can obtain different litho patterns at sample surfaces like this.
In the process of operation, can increase the exposure area area by the clear aperature of control beam expander and catoptron, thereby effectively improve little working (machining) efficiency; Angle by changing coherent light beam or carry out multiple-beam interference and expose and regulate the cycle of surperficial micro-rough structure, thus meticulous litho pattern obtained.
The effect of band pass filter is the frequency span and the light intensity of regulating laser beam, the effect of electronics optical gate is the in good time break-make of control laser beam, the effect of beam expander is that spot diameter is adjusted to desired size, the effect of beam splitter is that laser beam is divided into the multi-beam that energy equates (for example can adopt a splitting ratio (saturating inverse ratio) during the two-beam interference photoetching is 1: 1 beam splitter, and two beam splitters that can adopt splitting ratio to be respectively 1: 2 and 1: 1 during three beam interference photoetching make up realization).
Device of the present invention mainly postpones system, light beam focusing system and sample control system by laser instrument, laser beam splitter system, light beam and forms successively, and wherein laser beam adopts the two frequencys multiplication outputs (wavelength 532nm) or the first-harmonic output (wavelength 1064nm) of ps pulsed laser and ns pulsed laser device.
The present invention compares with other traditional laser ablation technology has following technical advantage:
System of processing is simple to operation, and cost is lower.The light path of this system is simple and regulate easily, does not need to adopt mask in the system, need not expensive short wavelength light source and imaging len, just can obtain the litho pattern of nano-scale.
Can realize the making of large tracts of land cycle micro-rough structure, efficient is higher.The size of the exposure visual field of interference lithography is corresponding to the size of beam size, only be subject to the clear aperature of beam expander and catoptron, compare with other lithographic techniques, big " visual field " easier realization of this method, therefore can produce meticulous litho pattern in the area in a big way, therefore working (machining) efficiency also is improved.
The controlling cycle of micro-rough structure, resolution is higher.Change the incident angle of coherent laser light beam or adopt multiple-beam interference can accurately adjust the cycle of surface microstructure, reach super sub-micro level even nano level resolution.
Interference lithography has unlimited depth of focus, can be applicable to special occasion.The depth of focus of interference lithography reality is by coherence's (coherent length is the rice magnitude) decision of the overlapping scope and the employed LASER Light Source of light beam, and the coherent length of interference light is corresponding to the depth of focus in the conventional optical lithography.If adopt short wavelength light source, compare with the depth of focus (micron order) of existing projecting etching imaging optical system, its long coherent length makes interference lithography be equivalent to have the depth of focus of " infinity ", is particularly suitable for using under the situation big in the matrix material size, that surface figure accuracy can't accurately be controlled.
Description of drawings
Fig. 1 double laser beams interference lithography is made the device synoptic diagram of surface period minute structure
Fig. 2 double laser beams interference lithography principle schematic
1 Nd:YAG transfers Q ps pulsed laser and ns pulsed laser device, 2 band pass filters, 3 electronics optical gates, 4 beam expanders, 5 splitting ratios are 1: 1 beam splitter, 6 catoptrons, 7 optical delays, 8 catoptrons, 9 catoptrons, 10 focus lamps, 11 matrix materials (being processed sample), the 12 three-dimensional worktable that drive, 13 computer control systems, 14 coherent laser beams, 15 coherent laser beams, waveform behind 16 litho patterns (being surface period micro-rough structure), 17 liang of relevant optical superposition.
Embodiment
The details and the performance of concrete device of the present invention are described below in conjunction with Fig. 1.
Laser interference lithography is made the device of surface period minute structure and is transferred Q ps pulsed laser and ns pulsed laser device (1), optical interference circuit system and sample control system to form by Nd:YAG successively.The optical interference circuit system comprises that laser beam splitter system, light beam postpone system and light beam focuses on system, comprise the band pass filter (2), beam expander (4), beam splitter (5), catoptron (6), optical delay (7), the catoptron (8) that connect successively, and the catoptron (9), the focus lamp (10) that link to each other successively with beam splitter (5), the sample control system by electronics optical gate (3), processed sample (11), three-dimensionally drive worktable (12) and computer control system (13) is formed; Wherein electronics optical gate (3) is positioned between band pass filter (2), the beam expander (4), places processed sample (11) and the three-dimensional worktable (12) that drives under the focus lamp (10) respectively,
In the little process of reality, processed sample (11) is fixed on three-dimensional the driving on the worktable (12), processed sample (11) moves thereupon together when computer control system (13) drives three-dimensional driving worktable (12), thereby can realize the relative motion between laser spot hot spot and the processed sample (11).Meanwhile, computer control system (13) also will coordinate to control the switch motion of electronics optical gate 2, to realize the in good time break-make of laser beam.
Fig. 2 is a double laser beams interference lithography principle schematic.By interference theory, two light beams can form light and dark interference fringe when satisfying the condition (frequency is identical, direction of vibration is identical, constant phase difference) of coherent light.In the present embodiment, by same lasing light emitter send two the bundle coherent laser beams (14) and (15) respectively with incident angle θ
1And θ
2Act on the surface of matrix material (11), the light intensity stack of two relevant light beams, the crest (light intensity is stronger) of the waveform (17) after the two relevant optical superposition is corresponding to bright fringe, trough (light intensity is weak) is corresponding to dark fringe, thereby the matrix material in light action zone will produce the change of pattern, thereby forms litho pattern (16).The cycle d of litho pattern (16) and the wavelength X of coherent light, the incident angle θ of coherent light
1And θ
2Relevant, relational expression is: d=λ/(sin θ
1+ sin θ
2).
Concrete device of the present invention also can extend to multi-beam interference photoetching, and unique different place is will adopt the beam splitter combination of a plurality of different splitting ratios that light beam is divided into the identical multi-beam of energy as required in the optical interference circuit system.
Claims (2)
1. method of making surface period minute structure, it is characterized in that at first opening laser instrument, be divided into multi-beam by beam splitter after making the laser beam of sending by laser instrument pass through band pass filter, electronics optical gate, beam expander, light beam after the beam splitting is regulated optical path difference by optical delay, and last line focus mirror focuses on the back acting in conjunction in being placed on the three-dimensional processed sample surface that drives on the worktable.
2. realize the described a kind of device of making the method for surface period minute structure of claim 1, it is characterized in that transferring Q ps pulsed laser and ns pulsed laser device (1) by Nd:YAG successively, optical interference circuit system and sample control system are formed, the optical interference circuit system comprises the laser beam splitter system, light beam postpones system and light beam focuses on system, it comprises the band pass filter (2) that connects successively, beam expander (4), beam splitter (5), catoptron (6), optical delay (7), catoptron (8), and the catoptron (9) that links to each other successively with beam splitter (5), focus lamp (10), the sample control system is by electronics optical gate (3), processed sample (11), three-dimensional worktable (12) and computer control system (13) composition of driving; Wherein electronics optical gate (3) is positioned between band pass filter (2), the beam expander (4), place processed sample (11) and the three-dimensional worktable (12) that drives under the focus lamp (10) respectively, it is wavelength 532nm or first-harmonic output wavelength 1064nm that laser beam adopts the two frequencys multiplication output of ps pulsed laser and ns pulsed laser device.
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| CN 200610085343 CN1862353A (en) | 2006-06-12 | 2006-06-12 | Method for making surface period minute structure and apparatus thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393303B (en) * | 2008-09-26 | 2010-06-09 | 苏州大学 | Method for making near infrared band three-dimensional photon crystal |
| CN101844272A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method and system for manufacturing self-cleaning surface structure by adopting laser interference photoetching technology |
| CN101980083A (en) * | 2010-09-13 | 2011-02-23 | 长春理工大学 | Method and system for preparing filter membrane mesh structure by laser interference photoetching technology |
| CN102172798A (en) * | 2011-02-17 | 2011-09-07 | 徐州永佳液压设备有限公司 | Method for processing antiwear texture of polyoxymethylene support ring |
| CN102236267A (en) * | 2011-06-29 | 2011-11-09 | 苏州大学 | Laser interference lithographic system |
| CN103663358A (en) * | 2012-09-20 | 2014-03-26 | 长春理工大学 | Method for preparing super-hydrophobic surface on silicon wafer based on laser interference nanometer lithography |
| CN101847670B (en) * | 2010-01-27 | 2015-09-02 | 长春理工大学 | Method for preparing nano grid by laser interference technology assisted electrochemical technology |
| CN106964908A (en) * | 2017-05-26 | 2017-07-21 | 广东工业大学 | A kind of laser micropore system of processing |
| CN108637489A (en) * | 2018-05-11 | 2018-10-12 | 北京卫星制造厂有限公司 | A method of carrying out milling microflute processing using ultrafast laser |
| CN109623155A (en) * | 2018-11-14 | 2019-04-16 | 吉林大学 | The method and application of nearly 4 π solid angle femtosecond laser direct write processing are carried out using multiphoton excitation |
| CN109954965A (en) * | 2019-03-28 | 2019-07-02 | 大族激光科技产业集团股份有限公司 | The method for carrying out Treatment of Metal Surface by nanosecond laser |
| CN110899983A (en) * | 2019-12-09 | 2020-03-24 | 沈阳理工大学 | Method for improving surface functionality of part by applying laser interference |
| CN113894444A (en) * | 2021-09-28 | 2022-01-07 | 武汉大学 | Water-guided pulse laser processing system and method based on interference light path design |
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2006
- 2006-06-12 CN CN 200610085343 patent/CN1862353A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393303B (en) * | 2008-09-26 | 2010-06-09 | 苏州大学 | Method for making near infrared band three-dimensional photon crystal |
| CN101844272A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method and system for manufacturing self-cleaning surface structure by adopting laser interference photoetching technology |
| CN101847670B (en) * | 2010-01-27 | 2015-09-02 | 长春理工大学 | Method for preparing nano grid by laser interference technology assisted electrochemical technology |
| CN101980083A (en) * | 2010-09-13 | 2011-02-23 | 长春理工大学 | Method and system for preparing filter membrane mesh structure by laser interference photoetching technology |
| CN101980083B (en) * | 2010-09-13 | 2013-02-20 | 长春理工大学 | Method for preparing filter membrane mesh structure by laser interference photoetching technology |
| CN102172798A (en) * | 2011-02-17 | 2011-09-07 | 徐州永佳液压设备有限公司 | Method for processing antiwear texture of polyoxymethylene support ring |
| CN102172798B (en) * | 2011-02-17 | 2014-01-29 | 徐州永佳液压设备有限公司 | Method for processing antiwear texture of polyoxymethylene support ring |
| CN102236267B (en) * | 2011-06-29 | 2014-05-28 | 苏州大学 | Laser interference lithographic system |
| CN102236267A (en) * | 2011-06-29 | 2011-11-09 | 苏州大学 | Laser interference lithographic system |
| CN103663358A (en) * | 2012-09-20 | 2014-03-26 | 长春理工大学 | Method for preparing super-hydrophobic surface on silicon wafer based on laser interference nanometer lithography |
| CN103663358B (en) * | 2012-09-20 | 2016-11-23 | 长春理工大学 | The method preparing super hydrophobic surface on silicon chip based on laser interference nanometer lithography |
| CN106964908A (en) * | 2017-05-26 | 2017-07-21 | 广东工业大学 | A kind of laser micropore system of processing |
| CN106964908B (en) * | 2017-05-26 | 2019-01-01 | 广东工业大学 | A kind of laser micropore system of processing |
| CN108637489A (en) * | 2018-05-11 | 2018-10-12 | 北京卫星制造厂有限公司 | A method of carrying out milling microflute processing using ultrafast laser |
| CN109623155A (en) * | 2018-11-14 | 2019-04-16 | 吉林大学 | The method and application of nearly 4 π solid angle femtosecond laser direct write processing are carried out using multiphoton excitation |
| CN109954965A (en) * | 2019-03-28 | 2019-07-02 | 大族激光科技产业集团股份有限公司 | The method for carrying out Treatment of Metal Surface by nanosecond laser |
| CN110899983A (en) * | 2019-12-09 | 2020-03-24 | 沈阳理工大学 | Method for improving surface functionality of part by applying laser interference |
| CN113894444A (en) * | 2021-09-28 | 2022-01-07 | 武汉大学 | Water-guided pulse laser processing system and method based on interference light path design |
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