CN102236267A - Laser interference lithographic system - Google Patents
Laser interference lithographic system Download PDFInfo
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- CN102236267A CN102236267A CN2011101788776A CN201110178877A CN102236267A CN 102236267 A CN102236267 A CN 102236267A CN 2011101788776 A CN2011101788776 A CN 2011101788776A CN 201110178877 A CN201110178877 A CN 201110178877A CN 102236267 A CN102236267 A CN 102236267A
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Abstract
The invention discloses a laser interference lithographic system, which comprises at least two lens groups. The lens group comprises a beam splitter, a first completely reflecting mirror and a second completely reflecting mirror. The beam splitter of the lens group is positioned on the main optical axis of incident light. Different lens groups are positioned at different positions of the main optical axis. After passing through the beam splitter of each lens group, the incident light generates reflected light and transmitted light, wherein the reflected light irradiates interference points of a sample to be lithographed after being reflected by the first and second completely reflecting mirrors of the current lens group; and the transmitted light is taken as the incident light of the lens group adjacent to the current lens group. In the laser interference lithographic system provided by the invention, angles of incident planes of interference light can be randomly adjusted about the main optical axis of the incident light so as to greatly widen the adjustment range of the angles of the incident planes of the interference light and meet the diversity of interference patterns.
Description
Technical field
The present invention relates to micro-nano structure and make the field, particularly relate to a kind of laser interference etching system.
Background technology
The surface periodic micro-nano structure as a kind of cutting edge technology, has shown tempting application prospect in various fields, as anti-reflection, sunken light, waterproof automatically cleaning, photonic crystal etc.The method of making this surface periodic micro-nano structure has electron beam lithography, nano-imprint lithography usually, but these two kinds of methods cost height often, apparatus expensive, can not large-area preparation or the surface structure for preparing meticulous inadequately; Laser interference lithography then can be with lower cost large-area preparation surface periodic micro-nano structure.
The ultimate principle of laser interference lithography is to utilize two bundles or the above coherent laser stack of two bundles to be radiated at sample surfaces, produces interference pattern.
In the prior art, the controlled laser interference etching system of a kind of incident direction and angle is arranged.Referring to Fig. 1, be laser interference lithography system construction drawing of the prior art.The principle of work of system shown in Figure 1 mainly is: incident ray 1 (laser) is divided into the four bundle light that intensity equates after semi-transparent semi-reflecting spectroscope group, and the light path in Fig. 2 finally forms at sample surfaces and interferes again.
But there is following shortcoming in laser interference etching system of the prior art: one be this system's spectroscope away from primary optical axis, the light path system more complicated; Another is this system for fear of to the blocking of incident light, and the runner 2 that links to each other with drive unit is designed to fan-shaped, causes the range of adjustment of interfering beam angle less, has limited the diversity of interference pattern.
Summary of the invention
The purpose of this invention is to provide a kind of laser interference etching system, can increase the range of adjustment of interfering beam angle, realize more various interference pattern.
For achieving the above object, the invention provides following scheme:
A kind of laser interference etching system comprises: at least two mirror groups; Described mirror group comprises: spectroscope, first total reflective mirror and second total reflective mirror;
The spectroscope of described mirror group all is positioned on the primary optical axis of incident light; Different mirror groups are positioned at the diverse location of described primary optical axis;
Incident light produces reflected light and transmitted light through behind the spectroscope of described mirror group; After first total reflective mirror of described this mirror of reflected light process group and the reflection of second total reflective mirror, be radiated at the interference point for the treatment of the photoetching sample; Described transmitted light becomes the incident light of the mirror group adjacent with this mirror group.
Preferably, described mirror group also comprises: the light beam compression unit is used for the spectroscope beam reflected of described mirror group is compressed.
Preferably, described light beam compression unit comprises: projection lens and concave cylindrical lens, described projection lens and concave cylindrical lens are confocal.
Preferably: removing a described mirror group is the fixed mirror group, and all the other described mirror groups are fixed on the same rotatable mechanical arm separately;
Perhaps, removing a described mirror group is the fixed mirror group, and all the other described mirror groups are fixed on the mechanical hook-up of same rotatable interlock separately, identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
A kind of laser interference etching system comprises: a type mirror group and one two type mirror group; A described type mirror group comprises: a spectroscope and two total reflective mirrors; Described two type mirror groups comprise: three total reflective mirrors;
A total reflective mirror of the spectroscope of a described type mirror group and described two type mirror groups all is positioned on the primary optical axis of incident light;
Incident light produces reflected light and transmitted light through behind the spectroscope of a described type mirror group; After first total reflective mirror of described this mirror of reflected light process group and the reflection of second total reflective mirror, be radiated at the interference point for the treatment of the photoetching sample; Described transmitted light becomes the incident light of the mirror group adjacent with this mirror group;
After the reflection of incident light through first total reflective mirror, second total reflective mirror and the 3rd total reflective mirror of described two type mirror groups, be radiated at the described interference point for the treatment of the photoetching sample.
Preferably, a described type mirror group and two type mirror groups also comprise: the light beam compressibility is used for the spectroscope beam reflected of a described type mirror group and two type mirror groups is compressed.
Preferably, described light beam compressibility comprises: projection lens and concave cylindrical lens, described projection lens and concave cylindrical lens are confocal.
Preferably: removing a described type mirror group is the fixed mirror group, and all the other described type mirror groups and described two type mirror groups are fixed on respectively on the same rotatable mechanical arm separately;
Perhaps, removing a described type mirror group is the fixed mirror group, all the other described type mirror groups and described two type mirror groups are fixed on respectively on the mechanical hook-up of same rotatable interlock separately, and are identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
Preferably: a described type mirror group is fixed on respectively on the same rotatable mechanical arm;
Perhaps, a described type mirror group is fixed on respectively on the mechanical hook-up of same rotatable interlock, and is identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
According to specific embodiment provided by the invention, the invention discloses following technique effect: by spectroscope is placed on the primary optical axis, simplified the light path of similar system, reduced optical path loss, increased the reliability of light path; Because in the light path of system, there be not stopping of any element in incident ray, therefore, the incident angle of interference light can be around the primary optical axis of incident ray, regulate at any angle, increased the range of adjustment of interfering beam angle greatly, can satisfy the diversity of interference pattern.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use among the embodiment below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a laser interference lithography system construction drawing of the prior art;
Fig. 2 is laser interference lithography system light path figure of the prior art;
Fig. 3 is the embodiment of the invention one a disclosed laser interference lithography system construction drawing;
Fig. 4 is the embodiment of the invention two disclosed laser interference lithography system construction drawings;
Fig. 5 is the hot spot synoptic diagram of uncompressed;
Fig. 6 is the hot spot interference region synoptic diagram of two uncompressed;
Fig. 7 is the disclosed light beam compression unit of a present embodiment structural drawing;
Fig. 8 is the hot spot synoptic diagram after overcompression;
Fig. 9 is two hot spot interference region synoptic diagram after overcompression.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Embodiment one
Referring to Fig. 3, be the embodiment of the invention one disclosed laser interference lithography system construction drawing.As shown in Figure 1, this system comprises: four mirror groups.The first mirror group comprises: spectroscope 1011, first total reflective mirror 1012 and second total reflective mirror 1013; The second mirror group comprises: spectroscope 1021, first total reflective mirror 1022 and second total reflective mirror 1023; The 3rd mirror group comprises: spectroscope 1031, first total reflective mirror 1032 and second total reflective mirror 1033; The 4th mirror group comprises: spectroscope 1041, first total reflective mirror 1042 and second total reflective mirror 1043.
The spectroscope of each mirror group all is positioned on the primary optical axis of incident light.By being successively set on the primary optical axis as far as near order, promptly different mirror groups are positioned at the diverse location of primary optical axis to the first mirror group to the, four mirror groups according to the distance sample.
Be example with the first mirror group below, the light path of laser interference etching system disclosed in this invention is done brief description.Incident ray is from the left side of Fig. 3, and level is injected spectroscope 1011.After spectroscope 1011 beam split, a part of light is gone out from spectroscope 1011 transmissions, becomes the incident ray of the spectroscope 1021 of the second mirror group; Another part light reflects on spectroscope 1011 surfaces, shines first total reflective mirror 1012, through 1012 reflections of first total reflective mirror, shines second total reflective mirror, 1013 surfaces again, after second total reflective mirror 1013 reflects, is radiated at the interference point of sample surfaces.
Incident ray is similar in the light path and the first mirror group of the second mirror group, the 3rd mirror group, the 4th mirror group.That is, behind the spectroscope of the light of each mirror group through this mirror group, a part of light finally can be radiated at the interference point of sample surfaces through the total reflective mirror of this mirror group, and another part light passes spectroscope, becomes the incident ray of adjacent next mirror group.
In the present embodiment, the reflection ray of four mirror groups adds the last light that transmits through spectroscope 1041, always has the interference point of five irradiate light at sample surfaces, and sample is carried out interference lithography.Need to prove that in the present embodiment, the number of mirror group is two (because having at least two light just can interfere) at least, also can be more than two, for example 3,4,5 or the like.In the practical application, the number of mirror group is to select flexibly according to the concrete pattern of photoetching.So locate should not be construed as limitation of the invention.
In the present embodiment, creatively spectroscope is placed on the primary optical axis, has simplified the light path of similar system widely, reduced optical path loss, increased the reliability of light path.
In the present embodiment, because incident ray is in the light path of system, there be not stopping of any element, therefore, the plane of incidence of interference light can be around the primary optical axis of incident ray, regulate at any angle, increased the range of adjustment of interfering beam plane of incidence angle greatly, can satisfy the diversity of interference pattern.
In the practical application, laser beam is that cross sectional shape is circular light beam.Referring to Fig. 5, be the hot spot synoptic diagram of uncompressed.As shown in Figure 5, when xsect was mapped to sample surfaces for circular light beam so that certain angle is oblique, its hot spot at sample surfaces was oval.
When different light beam mutual superposition was interfered, the direction of transverse was also inequality, and promptly ellipse can not overlap fully, thereby causes energy loss.Referring to Fig. 6, be the hot spot interference region synoptic diagram of two uncompressed.As shown in Figure 6, the overlapping region of two oval hot spots (promptly producing the zone of interfering) is very little, and non-overlapped part does not produce relevant pattern, is the energy loss part.
For reducing this energy loss, need before sample surfaces, compress in light beam irradiates to light beam.Therefore, in the present embodiment, each mirror group can also comprise: the light beam compression unit.As shown in Figure 1, the first mirror group comprises that light beam compression unit 1014, the second mirror groups comprise that light beam compression unit 1024, the three mirror groups comprise that light beam compression unit 1034, the four mirror groups comprise that light beam compression unit 1034, the four mirror groups comprise light beam compression unit 1044.
Referring to Fig. 7, be the disclosed light beam compression unit of present embodiment structural drawing.As shown in Figure 7, this light beam compression unit comprises:
Referring to Fig. 8, be the hot spot synoptic diagram after overcompression.Compare with Fig. 5, as can be seen, original oval-shaped hot spot obviously levels off to circle.
Referring to Fig. 9, be two hot spot interference region synoptic diagram after overcompression.Compare with Fig. 6, as can be seen, the interference region of two hot spots obviously increases, and has improved the utilization factor to incident ray.
More specifically, in the practical application, the light beam compression unit is identical at the draw direction of sample surfaces with light beam to the compression direction of light, and ratio of compression is identical with draw ratio or close.Compressibility adopts the combination of concavo-convex post lens.Projection lens and concave cylindrical lens are confocal, during directional light incident, still are directional light after the compression then.The projection lens are fixed, and when changing ratio of compression, only need to change different concave cylindrical lenses.Compressibility also can adopt the concavo-convex post combination of lenses more than three or three, changes ratio of compression by the distance that changes between each lens.
In the practical application,, the mirror group can be fixed on the mechanical arm in order conveniently to regulate the interference angle of incident ray in the native system.Concrete, be the complexity mechanically of avoiding linkage to cause, can be with rotatable respectively being fixed on the same mechanical arm of other mirror group except that the first mirror group.The mirror group that is fixed on the mechanical arm can be separately around the key light shaft rotary random angle.
Embodiment two
Referring to Fig. 4, be the embodiment of the invention two disclosed laser interference lithography system construction drawings.As shown in Figure 4, this system comprises: the one one type mirror group that spectroscope 2011, total reflective mirror 2012 and total reflective mirror 2013 constitute; The 21 type mirror group that spectroscope 2021, total reflective mirror 2022 and total reflective mirror 2023 constitute; The 31 type mirror group that spectroscope 2031, total reflective mirror 2032 and total reflective mirror 2033 constitute; The two type mirror groups that total reflective mirror 2041,2042,2043 constitutes.
Wherein, the spectroscope 2031 of spectroscope the 2021, the 31 type mirror group of spectroscope the 2011, the 21 type mirror group of the one one type mirror group and the total reflective mirror 2041 of two type mirror groups all are positioned on the primary optical axis of incident light.
Be example with the one one type mirror group below, the light path of laser interference etching system disclosed in this invention is done brief description.Incident ray is from the left side of Fig. 4, and level is injected spectroscope 2011.After spectroscope 2011 beam split, a part of light is gone out from spectroscope 2011 transmissions, becomes the incident ray of the spectroscope 2021 of the 21 type mirror group; Another part light reflects on spectroscope 2011 surfaces, shine first total reflective mirror 2012 of the first mirror group,, shine second total reflective mirror, 2013 surfaces of the first mirror group again through 2012 reflections of first total reflective mirror, after 2013 reflections of second total reflective mirror, be radiated at the interference point of sample surfaces.
Incident ray is similar in the light path and the one one type mirror group of the 21 type mirror group, the 31 type mirror group.That is, behind the spectroscope of the light of each mirror group through this mirror group, a part of light finally can be radiated at the interference point of sample surfaces through the total reflective mirror of this mirror group, and another part light passes spectroscope, becomes the incident ray of adjacent next mirror group.
The difference of the light path of two type mirror groups and a type mirror group is: the spectroscope in the type mirror group is replaced by total reflective mirror 2041 in two type mirror groups.This mainly is to depend on the pattern that need carry out interference lithography.Laser interference etching system in the present embodiment is applicable to the pattern that needs two dimension (2D) multiple-beam interference.The pattern that needs two dimension (2D) multiple-beam interference requires the primary optical axis direction not have interfering beam.In the present embodiment, because in the two last type mirror groups, being arranged on the primary optical axis is total reflective mirror, so can stop the axial incident light of key light.
Identical with embodiment one, in order to reduce the energy loss of interference light, in the present embodiment, each mirror group can also comprise: the light beam compression unit.As shown in Figure 4, the one one type mirror group comprises that light beam compression unit 2014, the 21 type mirror groups comprise that light beam compression unit 2024, the 31 type mirror groups comprise that light beam compression unit 2034, two type mirror groups comprise light beam compression unit 2044.
Each light beam compression unit comprises: projection lens and concave cylindrical lens, described projection lens and concave cylindrical lens are confocal.
In the practical application,, the mirror group can be fixed on the mechanical arm in order conveniently to regulate the interference angle of incident ray in the native system.Concrete, remove a described type mirror group, can with remaining type mirror group and two type mirror groups are rotatable respectively be fixed on the same mechanical arm, also can type mirror group be rotatable respectively is fixed on the same mechanical arm with one, make two type mirror groups fix.The mirror group that is fixed on the mechanical arm can be separately around the key light shaft rotary random angle.
In addition, when the distance of first total reflective mirror 2012 and second total reflective mirror 2013 is far away, also the element of the one one type mirror group can be separately fixed on the mechanical hook-up of same rotatable interlock.For example, spectroscope 2011, first total reflective mirror 2012 can be fixed on first change, second total reflective mirror 2013 is fixed on second change, and first change and second change interlock can guarantee that the element in the same mirror group is identical around the angle that the incident light primary optical axis rotates.
Each embodiment adopts the mode of going forward one by one to describe in this instructions, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand principle of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, part in specific embodiments and applications all can change.In sum, this description should not be construed as limitation of the present invention.
Claims (9)
1. a laser interference etching system is characterized in that, comprising: at least two mirror groups; Described mirror group comprises: spectroscope, first total reflective mirror and second total reflective mirror;
The spectroscope of described mirror group all is positioned on the primary optical axis of incident light; Different mirror groups are positioned at the diverse location of described primary optical axis;
Incident light produces reflected light and transmitted light through behind the spectroscope of described mirror group; After first total reflective mirror of described this mirror of reflected light process group and the reflection of second total reflective mirror, be radiated at the interference point for the treatment of the photoetching sample; Described transmitted light becomes the incident light of the mirror group adjacent with this mirror group.
2. system according to claim 1 is characterized in that, described mirror group also comprises: the light beam compression unit is used for the spectroscope beam reflected of described mirror group is compressed.
3. system according to claim 2 is characterized in that, described light beam compression unit comprises: projection lens and concave cylindrical lens, described projection lens and concave cylindrical lens are confocal.
4. according to each described system of claim 1-3, it is characterized in that: removing a described mirror group is the fixed mirror group, and all the other described mirror groups are fixed on the same rotatable mechanical arm separately;
Perhaps, removing a described mirror group is the fixed mirror group, and all the other described mirror groups are fixed on the mechanical hook-up of same rotatable interlock separately, identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
5. a laser interference etching system is characterized in that, comprising: a type mirror group and one two type mirror group; A described type mirror group comprises: a spectroscope and two total reflective mirrors; Described two type mirror groups comprise: three total reflective mirrors;
A total reflective mirror of the spectroscope of a described type mirror group and described two type mirror groups all is positioned on the primary optical axis of incident light;
Incident light produces reflected light and transmitted light through behind the spectroscope of a described type mirror group; After first total reflective mirror of described this mirror of reflected light process group and the reflection of second total reflective mirror, be radiated at the interference point for the treatment of the photoetching sample; Described transmitted light becomes the incident light of the mirror group adjacent with this mirror group;
After the reflection of incident light through first total reflective mirror, second total reflective mirror and the 3rd total reflective mirror of described two type mirror groups, be radiated at the described interference point for the treatment of the photoetching sample.
6. system according to claim 5 is characterized in that, a described type mirror group and two type mirror groups also comprise: the light beam compressibility is used for the spectroscope beam reflected of a described type mirror group and two type mirror groups is compressed.
7. system according to claim 6 is characterized in that, described light beam compressibility comprises: projection lens and concave cylindrical lens, described projection lens and concave cylindrical lens are confocal.
8. according to each described system of claim 5-7, it is characterized in that: removing a described type mirror group is the fixed mirror group, and all the other described type mirror groups and described two type mirror groups are fixed on respectively on the same rotatable mechanical arm separately;
Perhaps, removing a described type mirror group is the fixed mirror group, all the other described type mirror groups and described two type mirror groups are fixed on respectively on the mechanical hook-up of same rotatable interlock separately, and are identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
9. according to each described system of claim 5-7, it is characterized in that: a described type mirror group is fixed on respectively on the same rotatable mechanical arm;
Perhaps, a described type mirror group is fixed on respectively on the mechanical hook-up of same rotatable interlock, and is identical around the angle that the incident light primary optical axis rotates to guarantee the element in the same described mirror group.
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| CN201110178877.6A CN102236267B (en) | 2011-06-29 | 2011-06-29 | Laser interference lithographic system |
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| CN201110178877.6A CN102236267B (en) | 2011-06-29 | 2011-06-29 | Laser interference lithographic system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102707583A (en) * | 2012-06-15 | 2012-10-03 | 杭州士兰明芯科技有限公司 | Multi-light-beam exposure system and method for manufacturing photonic crystal mask layer |
| CN102838082A (en) * | 2012-09-24 | 2012-12-26 | 复旦大学 | Method for preparing micro-nano structure on material surface based on laser interference photolithography |
| CN110806680A (en) * | 2019-10-31 | 2020-02-18 | 清华大学 | Laser interference photoetching system |
| CN111093883A (en) * | 2017-04-26 | 2020-05-01 | 4Jet 微科技股份有限公司 | Method and apparatus for manufacturing trench |
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| CN1786822A (en) * | 2005-11-23 | 2006-06-14 | 中国科学院光电技术研究所 | Method and system for imaging interference photoetching adopting white laser |
| CN1862353A (en) * | 2006-06-12 | 2006-11-15 | 江苏大学 | Method for making surface period minute structure and apparatus thereof |
| JP2008027489A (en) * | 2006-07-19 | 2008-02-07 | Fujifilm Corp | Information recording and reproducing apparatus and information reproducing method |
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| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102707583A (en) * | 2012-06-15 | 2012-10-03 | 杭州士兰明芯科技有限公司 | Multi-light-beam exposure system and method for manufacturing photonic crystal mask layer |
| CN102838082A (en) * | 2012-09-24 | 2012-12-26 | 复旦大学 | Method for preparing micro-nano structure on material surface based on laser interference photolithography |
| CN111093883A (en) * | 2017-04-26 | 2020-05-01 | 4Jet 微科技股份有限公司 | Method and apparatus for manufacturing trench |
| CN111093883B (en) * | 2017-04-26 | 2022-08-30 | 4Jet 微科技股份有限公司 | Method and apparatus for manufacturing trench |
| CN110806680A (en) * | 2019-10-31 | 2020-02-18 | 清华大学 | Laser interference photoetching system |
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| CN102236267B (en) | 2014-05-28 |
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