KR101395294B1 - Laser interference lithography system - Google Patents

Laser interference lithography system Download PDF

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Publication number
KR101395294B1
KR101395294B1 KR1020120142153A KR20120142153A KR101395294B1 KR 101395294 B1 KR101395294 B1 KR 101395294B1 KR 1020120142153 A KR1020120142153 A KR 1020120142153A KR 20120142153 A KR20120142153 A KR 20120142153A KR 101395294 B1 KR101395294 B1 KR 101395294B1
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KR
South Korea
Prior art keywords
substrate
stage
light
axis
angle
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Application number
KR1020120142153A
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Korean (ko)
Inventor
김종석
이성호
정일규
강경태
김형태
Original Assignee
한국생산기술연구원
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Priority to KR1020120142153A priority Critical patent/KR101395294B1/en
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Publication of KR101395294B1 publication Critical patent/KR101395294B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Abstract

The present invention relates to a laser interference lithography device wherein the device comprises a reflection mirror for reflecting laser outputted from a laser light source into a particular direction; a space filter for diffusing the light reflected from the reflected mirror; a tilting mirror part for forming interference fringes on a substrate by reflecting the light diffused through the space filter at three mirrors disposed at particular angles; and a moving stage for controlling the incidence angle of light coming into the substrate by settling the substrate and moving into particular direction. A two-dimensional pattern can be formed at the substrate by disposing the three tilting mirrors at the upper end of the substrate and controlling the angle of the three tilting mirrors and the moving stage.

Description

[0001] The present invention relates to a laser interference lithography system,

The present invention relates to a laser interference lithography apparatus, and more particularly, to a laser interference lithography apparatus capable of forming a desired two-dimensional pattern on a substrate by arranging three tilting mirrors at the top of the substrate, and adjusting the angle of the moving stage and three tilting mirrors .

Generally, interference lithography is a process technology used to fabricate periodic patterns in semiconductor processing and related fields. It uses a coherence light source such as a laser to generate an interference signal interference fringe and then irradiating the signal onto a substrate coated with photoresist to form a pattern such as an intensity distribution of the interference signal.

To date, three to four optics have been used as interferometric lithography systems to realize this process technology. Among them, Lloyd type interference lithography apparatus and interference lithography apparatus improved it. 1 and 2 are presented for a more detailed description. FIG. 1 is a schematic view for explaining the principle of a Lloyd type interference lithography apparatus, and FIG. 2 is a schematic diagram of an interference lithography apparatus for improving the same.

As shown in FIG. 1, the interference lithography apparatus 10 is an apparatus that was initially developed, and has been widely used so far due to simple device configuration and reliability. The laser light emitted from the optical oscillator 11 travels in the form of a spherical wave while passing through the condenser lens 12 and the pinhole 13. On the substrate 14, a photo-curing agent 16 is applied, and a reference mirror 17 is provided. A part of the light is incident on the reference mirror 17 and a part of the light is incident on the substrate 14.

The reference light is incident on the reference mirror (P2). The reference light is reflected on the substrate surface. The reference light is reflected on the substrate surface, and the interference light (P1) to form an interference signal, and the photo-curing agent 16 is cured according to the light intensity distribution of the interference signal. The intensity of the interference signal formed on the substrate surface is determined by the optical path difference between the reference light and the interference light. The light intensity at the point P1 in FIG. 1 is reflected at the point P2 of the reference mirror, Is determined as the difference in the traveling distance of the interference light incident on the point P1 at the reference light and the pinhole, and has a sinusoidal shape when the light intensity is shown on the entire surface of the substrate.

2 is a block diagram of an interference lithography optical system widely used as a Mach-Zehnder interference system. In the Mach-Zehnder interferometric lithography apparatus 20, incident light such as a laser oscillated in the optical oscillator 21 is split into two beams via a mirror 22 and a beam splitter. The left and right lights are respectively referred to as left and right lights. The light is passed through a spatial filter composed of a mirror 24, a condenser lens 25 and a pinhole 26, (28). The spatial filter is applied equally to the left and right lights and serves to enlarge the laser light to a size corresponding to the exposure area. FIG. 2 shows an example of enlarging the light in the form of a spherical wave, and a lens is further provided after the pinhole to enlarge the light in the form of a parallel wave.

The optical intensity of the interference signal formed on the substrate 28 in the interference lithography apparatus 20 is determined by the difference in distance from the pinhole 26 of the left and right spatial filters to the corresponding point. For example, Is determined by the distance between the pinhole P1 of the left spatial filter and the distance of P1 from the pinhole of the right spatial filter. The intensity of the light is generated in the form of a sinusoidal wave as shown in the entire surface of the substrate.

However, in the above apparatus, the spatial axes of the spatial filter and the interference light must be strictly adjusted every time the incident angle &thetas; of the two interference lights is adjusted, and it is difficult to control the interference lithography apparatus at a specific incident angle. Furthermore, if the angle of incidence can not be precisely controlled, incidence angles of the left / right interference light can not be matched, and the period of the pattern to be formed can not be precisely controlled.

In order to form a two-dimensional periodic pattern in the case of the Lloyd's mirror method and the Mach-Zender method, there is a problem that the sample wafer must be rotated twice at the desired angle after the first exposure, have.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a semiconductor device, which comprises three tilting mirrors disposed on an upper surface of a substrate, adjusting the angle between the moving stage and the three tilting mirrors, And to provide a lithographic apparatus.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention, unless further departing from the spirit and scope of the invention as defined by the appended claims. It will be possible.

According to an aspect of the present invention, there is provided a laser interference lithography apparatus including: a reflection mirror for reflecting a light path of laser light output from a laser light source unit in a predetermined direction; A spatial filter for diffusing light reflected from the reflection mirror; A tilting mirror unit that reflects light diffused through the spatial filter through three mirrors arranged at a predetermined angle to form an interference fringe on the substrate; And a moving stage that seats the substrate and moves in a predetermined direction to adjust an incident angle of light incident on the substrate.

In particular, a shutter for transmitting or blocking light output from the light source unit; A shutter control unit for controlling the driving of the shutter in conjunction with the stage driving; A mirror control unit for controlling driving of the tilting mirror unit; And a stage control unit for controlling the driving of the moving stage.

In particular, the moving stage is characterized by including an X-axis stage, a Y-axis stage, a Z-axis stage, a rotating stage, and a goniometer.

In particular, the present invention is characterized in that the size of the pattern formed on the substrate is controlled by controlling the incident angle of light incident on the substrate by driving the X-axis stage, the Y-axis stage, or the Z-axis stage .

In particular, the rotary stage is characterized in that the pattern forming direction of the object is adjusted while the object is rotated.

In particular, the goniometer is characterized in that it adjusts the angle of incidence of the three lights incident on the substrate by adjusting the angle of the substrate.

In particular, the tilting mirror portion is characterized in that a beam output from the spatial filter is moved in three mirrors to form a two-dimensional pattern on the substrate by adjusting an incident angle of light irradiated to the substrate.

In particular, the tilting mirror portion is characterized in that the angle is controlled so that the incident light is irradiated onto the substrate within a range of 0 to 90 degrees.

Particularly, the spatial filter includes a condenser lens for enlarging the laser light to a size corresponding to the exposure area, and a pinhole for determining the intensity of an interference signal formed on the substrate. .

In particular, the present invention is characterized in that it further includes a phase difference plate for adjusting the phase difference of the light reflected by the reflection mirror to polarize the light.

According to the present invention, a desired two-dimensional pattern can be formed on a substrate by disposing three tilting mirrors on the top of the substrate and adjusting the angles of the moving stage and the three tilting mirrors.

Further, in the case of processing a large-area substrate, it is possible to form a pattern of a large-area substrate without installing the stage vertically.

In addition, the configuration of the optical system can be reduced by applying only one spatial filter.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic diagram illustrating the principle of a Lloyd type interferometric lithography apparatus.
2 is an optical system configuration diagram widely used as a Mach-Zehnder interference lithography apparatus.
3 schematically shows a configuration of a laser interference lithography apparatus according to the present invention;
FIGS. 4A and 4B illustrate the adjustment of the angle of incidence to the substrate by adjusting the tilting mirror and the moving stage viewed in the "A" direction in FIG.
FIG. 4C is a view illustrating adjustment of an incident angle to be incident on a substrate by adjusting a tilting mirror and a moving stage viewed in the direction of "B"
5 illustrates a process of forming a pattern of a large substrate by a laser interference lithography apparatus according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the detailed description of known functions and configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention.

The same reference numerals are used for portions having similar functions and functions throughout the drawings.

In addition, in the entire specification, when a part is referred to as being 'connected' to another part, it may be referred to as 'indirectly connected' not only with 'directly connected' . Also, to include an element does not exclude other elements unless specifically stated otherwise, but may also include other elements.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a view schematically showing a configuration of a laser interference lithography apparatus according to the present invention. 3, the laser interferometric lithography apparatus 300 of the present invention includes a light source unit 310, a shutter 320, a reflection mirror 330, a retardation plate 340, a spatial filter 350, A tilting mirror unit 370, a substrate 380, a shutter control unit 321, a tilting mirror control unit 375, and a moving stage control unit 365. [

The laser light output from the light source unit 310 is reflected by the reflection mirror 320 and propagates by changing the optical path in a predetermined direction. At this time, the light can use the laser light itself emitted from the laser source, and the laser light amplified to a certain diameter through the collimator can be used to uniformly control the intensity of the incident light. Further, the light output from the light source unit may be blocked or transmitted by the shutter through the control of the shutter control unit to control the output.

The shutter 320 transmits or blocks light output from the light source unit.

The shutter control unit 321 controls the driving of the shutter in conjunction with the stage driving.

The retarder 340 is polarized by adjusting the phase difference of the light reflected from the reflective mirror. That is, it can be used to polarize the light incident on the spatial filter 340.

The spatial filter 340 receives light from three tilting mirror parts by enlarging and outputting light reflected from the reflection mirror by applying one configuration in the present invention. Here, the spatial filter 340 includes a condenser lens and a pinhole, and serves to spread incident laser light having a random fluctuation removed on a predetermined area of the substrate through a series of optical components . That is, the laser light is magnified to a size corresponding to the exposure area of the condenser lens, and the intensity of the interference signal formed on the substrate is determined by a distance difference from the pinhole to the corresponding point. Here, the pinhole is a metal sheet precisely punched in the center, and the size of the hole is inversely proportional to the magnification of the lens, and is 5 to 50 탆.

The moving stage 360 seats the substrate 380 and moves in a predetermined direction to adjust the incident angle of the light incident on the substrate 380. At this time, the moving stage controller 365 controls the driving of the moving stage 360.

More specifically, the moving stage 360 includes an X-Y-axis stage 361, a Z-axis stage 362, a rotating stage 363, and a goniometer 364.

The X-Y-axis stage 361 or the Z-axis stage 362 is driven to control the incident angle of the light incident on the substrate 280 to control the size of the pattern formed on the substrate 380 .

The rotation stage 363 adjusts the pattern formation direction of the substrate 380 while rotating the substrate 380 and the goniometer 364 adjusts the angle of the substrate 380 to form a pattern The angle is adjusted.

The tilting mirror unit 370 reflects the light diffused through the spatial filter 350 by the three mirrors 371, 372 and 373 arranged at a predetermined angle to form an interference fringe on the substrate. At this time, the driving of the tilting mirror unit 370 is controlled by the tilting mirror control unit 375.

The tilting mirror unit 370 moves the beam output from the spatial filter 350 from the three mirrors 371, 372 and 373 to the left and right to control the angle of incidence of light on the substrate 380, A two-dimensional pattern size is determined and formed on the substrate. At this time, if only one-dimensional pattern is formed, one mirror may be removed and the process may proceed.

The angle of the tilting mirror unit 370 is controlled so that the incident light is irradiated onto the substrate 380 within a range of 0 to 90 degrees.

FIGS. 4A and 4B are views for adjusting the angle of incidence entering the substrate by adjusting the tilting mirror and the moving stage viewed in the direction of "A" in FIG. 3. FIG. FIG. 3 is a view showing the adjustment of the incident angle to be incident on the substrate by adjusting the tilting mirror and the moving stage.

4A, the moving stage 360 is composed of an X-axis-Y-axis stage 361, a Z-axis stage 362, a rotating stage 363, and a goniometer 364. The moving stage 360 seats the substrate 380 and moves in a predetermined direction to adjust the incident angle of the light incident on the substrate 380.

More specifically, the moving stage 360 is sequentially connected to an X-axis-Y-axis stage 361, a Z-axis stage 362, a rotating stage 363 and a goniometer 364, A substrate is provided on the substrate 364. The moving stage control unit 365 controls the driving of each of the moving stages. That is, when a predetermined pattern is formed on the substrate 380, when the X-axis-Y-axis stage 361 is moved, the Z-axis stage 362 and the rotation stage 363 move along the X- Axis. The incident angle can be adjusted when the X-Y axis is moved.

In addition, the height of the Z-axis stage 362 is adjusted up and down in the moving stage 360 to adjust the incident angle of the light irradiated to the substrate 380. That is, it can be seen that the angle of incidence irradiated on the substrate 380 is changed by increasing the Z-axis stage 362. Accordingly, the pattern size formed on the substrate can be easily controlled by controlling the incident angle of the light incident on the substrate 380.

The rotation stage 363 can adjust the pattern formation direction of the substrate while rotating the substrate 380. That is, the pattern direction of the substrate can be formed differently while rotating the rotation stage 363 at a predetermined angle on the X-Y axis plane of the substrate. By using this, two or three processes are performed at different rotation angles to form various two-dimensional patterns.

When adjusting the inclination of the substrate 380 mounted on the goniometer 364, the angle of incidence of the light incident on the substrate can be adjusted by tilting the goniometer 364 at a predetermined angle.

As shown in FIG. 4B, three tilting mirror units 370 are provided on the substrate so as to correspond to the light output diffused in the spatial filter 350. The tilting mirror control unit 370 adjusts an angle of the tilting mirror unit 370 so that incident light is irradiated onto the substrate 380 within a range of 0 to 90 degrees, Change the path. That is, the height of the Z-axis stage and the angle and direction of the tilting mirror unit 370 are controlled to adjust the incident angle of the substrate 380. Therefore, it is possible to easily adjust the incident angle without adjusting the optical system such as the aligned spatial filter.

As shown in FIG. 4C, while driving the XYZ axis stage, the tilting mirror unit 370 is adjusted in parallel with the driving of the XYZ axis stage to adjust the incident angle of the light incident on the substrate 380, It is possible to control the size and shape of a pattern formed for each region.

5 is a view showing a process of forming a pattern of a large substrate by a laser interference lithography apparatus according to the present invention. 5, in the case of a large area wafer substrate, the X axis-Y axis stage 361, the Z axis stage 362, the rotation stage 363, and the goniometer 364 are appropriately adjusted, The patterning process can be carried out in such a manner that the patterning process is sequentially performed.

Therefore, it becomes possible to form a pattern of a large-area substrate limited by the configuration of the optical system.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims that follow.

Description of the Related Art
310 --- Light source 320 --- Reflective mirror
330 --- Beam splitter 340 --- Spatial filter
350 --- Adjustable mirror 360 --- Moving stage
370 --- substrate

Claims (10)

In a laser interference lithography apparatus,
A reflection mirror for reflecting the optical path of the laser light output from the laser light source part in a predetermined direction;
A spatial filter for diffusing light reflected from the reflection mirror;
A tilting mirror unit that reflects light diffused through the spatial filter through three mirrors arranged at a predetermined angle to form an interference fringe on the substrate;
And a moving stage that seats the substrate and moves in a predetermined direction to adjust an incident angle of light incident on the substrate,
The moving stage includes an X-axis-Y-axis stage, a Z-axis stage, a rotating stage, and a goniometer, wherein the X-axis-Y-axis stage, the Z-axis stage, Whereby the substrate is seated on the goniometer,
Dimensional pattern size on the substrate by adjusting the incident angle of the beam diffused from the spatial filter by moving the positions of the three mirrors to the left and right,
Determining a two-dimensional pattern size formed on a region of the substrate by horizontally moving the substrate using the X-axis and Y-axis stages or vertically moving the substrate using the Z-axis stage,
Dimensional pattern formation direction on the substrate by rotating the substrate using the rotation stage,
Wherein the angle of the substrate is adjusted using the goniometer to determine a two-dimensional pattern formation angle on the substrate.
The method according to claim 1,
A shutter for transmitting or blocking light output from the light source unit;
A shutter control unit for controlling the driving of the shutter in conjunction with the stage driving;
A mirror control unit for controlling driving of the tilting mirror unit;
Further comprising a stage control unit for controlling driving of the movable stage.
delete delete delete delete delete The method according to claim 1,
Wherein the tilting mirror unit adjusts the angle so that the incident light is irradiated onto the substrate within a range of 0 to 90 degrees.
The method according to claim 1,
Wherein the spatial filter comprises a condenser lens for enlarging the laser light to a size corresponding to the exposure area and a pinhole for determining the intensity of the interference signal formed on the substrate, Device.
The method according to claim 1,
And a phase difference plate for adjusting the phase difference of the light reflected by the reflection mirror to polarize the light.
KR1020120142153A 2012-12-07 2012-12-07 Laser interference lithography system KR101395294B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105425869A (en) * 2015-10-29 2016-03-23 中国工程物理研究院激光聚变研究中心 Light beam direction control method
US20210229218A1 (en) * 2020-01-23 2021-07-29 Shanghai Industrial µ Technology Research Institute Laser processing device and laser processing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162750A (en) * 2000-11-27 2002-06-07 Mitsutoyo Corp Exposure device
JP2002311218A (en) * 2001-04-11 2002-10-23 Hitachi Ltd Forming method for diffraction grating, interference exposing device and production method for optical device
US20060044539A1 (en) * 2004-08-27 2006-03-02 Asml Holding N.V. Adjustable resolution interferometric lithography system
KR20060049080A (en) * 2004-10-21 2006-05-18 세이코 엡슨 가부시키가이샤 A method of manufacturing a substrate with concave portions, a substrate with concave portions, a microlens substrate, a transmission screen, and a rear projection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162750A (en) * 2000-11-27 2002-06-07 Mitsutoyo Corp Exposure device
JP2002311218A (en) * 2001-04-11 2002-10-23 Hitachi Ltd Forming method for diffraction grating, interference exposing device and production method for optical device
US20060044539A1 (en) * 2004-08-27 2006-03-02 Asml Holding N.V. Adjustable resolution interferometric lithography system
KR20060049080A (en) * 2004-10-21 2006-05-18 세이코 엡슨 가부시키가이샤 A method of manufacturing a substrate with concave portions, a substrate with concave portions, a microlens substrate, a transmission screen, and a rear projection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105425869A (en) * 2015-10-29 2016-03-23 中国工程物理研究院激光聚变研究中心 Light beam direction control method
US20210229218A1 (en) * 2020-01-23 2021-07-29 Shanghai Industrial µ Technology Research Institute Laser processing device and laser processing method

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