CN102838082A - Method for preparing micro-nano structure on material surface based on laser interference photolithography - Google Patents
Method for preparing micro-nano structure on material surface based on laser interference photolithography Download PDFInfo
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- CN102838082A CN102838082A CN2012103568811A CN201210356881A CN102838082A CN 102838082 A CN102838082 A CN 102838082A CN 2012103568811 A CN2012103568811 A CN 2012103568811A CN 201210356881 A CN201210356881 A CN 201210356881A CN 102838082 A CN102838082 A CN 102838082A
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Abstract
The invention belongs to the technical field of electronics, and particularly relates to a method for preparing a micro-nano structure on a material surface based on laser interference photolithography. The micro-nano structure is formed on photoresist by generation of laser interference, so as to transfer the micro-nano structure on the photoresist to the material surface of a substrate with an etching method, and form the structures such as micro-nano-scale gratings, dot matrixes and linear arrays. By adoption of the method disclosed by the invention, high-quality nano structures can be produced in a large area on various material surfaces. The method disclosed by the invention is simple and convenient, is low in cost and has a great application value.
Description
Technical field
The invention belongs to electronic technology field, be specifically related to utilize laser interference to be engraved in the method that material surface is made micro-nano structure.
Background technology
The micro-nano structure of making ad hoc structure at material surface is the research emphasis in microelectronics and nano science field always; Yet the size restrictions of conventional lithography method and high cost; Can't produce the micro-nano graph that large tracts of land and cycle yardstick change flexibly in enormous quantities, and these specific periodic structures are made, and make at microelectronic component; Biologic medical and electron detection etc. belong to core technology in the field, and therefore low-cost batch process large area micro-nano structure has high market value.
The method of laser interference lithography is made surface micro micro-nano structure aspect for low cost large tracts of land in enormous quantities has incomparable advantage; Especially when making from the periodic structure of hundreds of nanometer to several micro-meter scales, the method for laser interference lithography can be finished the work very easy and cheaply.These periodic structures comprise grating, dot matrix and linear array structure.Then utilize microelectronic lithographic method commonly used, can these micro-nano structures be transferred to above the substrate, thereby make laser interference lithography to be applied in more field.We have developed this laser interference photolithography technology that utilizes and have transferred to the method on the substrate through lithographic method then at making micro-nano structure on the photoresist earlier, make the surface micro micro-nano structure on the various substrates thereby be implemented in.
Summary of the invention
The objective of the invention is to propose a kind of method, to be used for fields such as electronics, biologic medical in material surface making large tracts of land periodicity micro/nano-scale structure.
What the present invention proposed makes the periodically method of micro/nano-scale structure of large tracts of land at material surface; Mainly be on photoresist, to make micro-nano structure through the method for laser interference lithography; And then through dry method or wet etching, will the micro-nano structure on photoresist transfer to the surface of substrate.Concrete steps are:
(1) spin coating photoresist on substrate;
(2) make micro-nano structure through method for laser interference lithography on the photoresist surface;
(3) utilize the method for etching to transfer on the substrate micro-nano structure on the photoresist.
Among the present invention, the photoresist of spin coating can be selected from the positive photoresist or the negative photoresist of g line, i line and ultraviolet band on substrate.
Among the present invention, described substrate is silicon, platinum, ruthenium, iridium, chromium or gold, perhaps is yttrium oxide, glass or quartz etc.
Among the present invention, described micro-nano structure comprise grating, dot matrix, linear array and the nanometer pinpoint array structure of material surface, and this array structure is periodic.
The cycle of micro-nano structure of the present invention; Be meant adjacent two the projection nano wire centre distances of optical grating construction, the distance between adjacent two dot center of lattice structure, and in the heart distance in adjacent two nano wires in the linear array structure; Be one-period, scope is 100 nanometers to 5 micron.
Linear array micro-nano structure according to the invention is meant periodically nano thread structure, and every nanowire length unanimity is from 100 nanometers to 5 micron, and the cycle is adjacent two nano wire center distance.
Among the present invention, described method for laser interference lithography comprises two-beam interference photoetching or multi-beam interference photoetching, and interference lithography repeatedly.Wherein multi-beam interference photoetching comprises from light beam to 7 beam interference photoetching.
Among the present invention, etching is dry etching or wet etching described in the step (3); Described dry etching is a reactive ion etching, uses gases such as oxygen, argon gas, sulfur hexafluoride, fluoroform, four negative methane to produce plasma, thereby produces the etching effect.Described wet etching uses strong base solution, and hydrofluoric acid etc. have corrosive solution to backing material.
Among the present invention, the used laser instrument of described laser interference lithography comprises: 633nm, 514nm, 355nm or 325nm equiwavelength's semiconductor or gas laser.
Method for laser interference lithography provided by the present invention is made the technology of micro-nano structure figure at material surface; Can form the two-dimentional micro-nano graph that area is of high quality very greatly, can be at biologic medical, the micro-nano electronic device is made; Be used widely in the electron detection field, and with low cost.
Description of drawings
Fig. 1-Fig. 4 is the example procedure generalized section according to the inventive method.
Fig. 5-Fig. 6 is according to the sample of the inventive method actual fabrication nanostructured electron micrograph in kind.
Label declaration among the figure: 100 silicon substrates; 102 positivities or negative photoresist; Positivity or negative photoresist after 102-1 develops, 104 incident coherent lights, 106 developer solutions; Gases such as oxygen, argon gas, sulfur hexafluoride, fluoroform, four negative methane produce plasma in 108 dry etchings, the graphic structure that 110 cycles produced to the periodic grating of 5um, dot matrix, nanometer pinpoint array and all use interference lithographies at 100nm.
The specific embodiment
Hereinafter combines to be shown in more specifically describes the present invention in the reference implementation example, the present invention provides preferred embodiment, but should not be considered to the embodiment that only limits in this elaboration.In the drawings, the thickness in layer and zone has been amplified in explanation for ease, shown in size do not represent actual size.
Reference diagram is the sketch map of idealized embodiment of the present invention; Embodiment shown in the present should not be considered to only limit to the given shape in zone shown in the figure, in embodiments of the present invention, all representes with complicated nanometer pinpoint array structure; Other simple structures; For example grating, dot matrix etc. all are included in the present invention's row, and the expression among the figure is schematically, but this should not be considered to limit scope of the present invention.
Fig. 1-Fig. 4 is the preparation process generalized section according to the instance of the inventive method application.
Fig. 1 is the cross-sectional view of substrate 100 and photoresist 102.Selected substrate can be silicon, platinum, ruthenium, iridium, chromium, gold and yttrium oxide, glass.What instance was selected among this paper is silicon.Cross-sectional view behind spin coating one deck photoresist 102 on the substrate 100, photoresist can be i line positive photoresist and negative photoresist.What this instance used is positive photoresist, is spin-coated on the substrate 102 with certain rotating speed, on the hot plate of uniform temperature, it is carried out preceding baking then.Use interference photoetching technology that ready sample is made public subsequently; Two bundle coherent lights 104 are radiated at sample surfaces with identical incidence angle; Just can on photoresist, form grating array behind the certain hour; Carry out the irradiation second time if rotate to an angle after the irradiation again, just can on photoresist, form complicated structure such as nano-dot matrix, nanometer pinpoint array.
Fig. 2 immerses the corresponding developer solution 106 of photoresist that uses in the technology for the sample after will making public, and behind the developing process of several seconds, interferes the zone of strengthening just can be washed off 102-1 on the photoresist, just can form nanometer pinpoint array 110 structures on the photoresist surface.After cleaning with deionized water, on the hot plate of uniform temperature, carry out post bake and handle, in technical process, the post bake process also can not carried out, and therefore, no matter post bake whether, this step process is all at protection domain of the present invention.
Fig. 3 places in the reaction chamber of reactive ion etching appearance for the sample after will developing; Gases such as oxygen, argon gas, sulfur hexafluoride, fluoroform, four negative methane produce plasma 108 bombardment sample surfaces in the reaction chamber; Photoresist and backing material are carried out etching; And, the figure on photoresist surface is transferred on the backing material with certain etching selection ratio.In the process of etching; Can carry out complicated more processing to material surface owing to use different mists, different pressure, different power; Simultaneously because the etching all directions speed of gas with various is different; The figure of producing is difference to some extent also, therefore makes the different surface micro-nano structure all in the protection domain of this patent by different parameters.
Fig. 4 transfers in substrate 100 surface diagrams for last nanometer pinpoint array 110 structures.
Fig. 5 is the cross-sectional electron micrograph that substrate 100 and post-develop are carved glue 102-1.This figure is the electron micrograph of the surface texture in real technology, produced, and what substrate was selected is silicon, and what photoresist was selected is a kind of i line positive photoresist glue, uses the technology of re-expose, produces the complicated pointed structure of nanoneedle on the surface.
Fig. 6 receives the electron micrograph of surface texture for the dimension behind over etching, produced on substrate 100 surfaces.This figure after using the reactive ion etching process step in the real technology, transfers to surface of silicon with the figure on photoresist surface.This step is the adjustment parameter, and the etching selection ratio of photoresist with substrate remained on about 1:1.
Fig. 5 and Fig. 6 sample for producing in the real technology has proved that fully dimension that the inventive method can be used for making large-area high-quality receives the surface texture of yardstick, and these structures have important prospect in fields such as electronics, biologic medicals.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except like enclosed claim limited, the invention is not restricted at the specific embodiment described in the specification.
Claims (8)
1. one kind is engraved in the method that material surface is made micro-nano structure based on laser interference; It is characterized in that: the method through laser interference lithography is made micro-nano structure on photoresist; And then through dry method or wet etching; Will the micro-nano structure on photoresist transfer to the surface of substrate, concrete steps are:
(1) spin coating photoresist on substrate;
(2) make micro-nano structure through method for laser interference lithography on the photoresist surface;
(3) utilize the method for etching to transfer on the substrate micro-nano structure on the photoresist.
2. method according to claim 1 is characterized in that: said photoresist is the positive photoresist or the negative photoresist of g line, i line or ultraviolet band.
3. method according to claim 1 is characterized in that: described substrate is silicon, platinum, ruthenium, iridium, chromium or gold, perhaps is yttrium oxide, glass or quartz.
4. method according to claim 1 is characterized in that: described micro-nano structure comprise grating, dot matrix, linear array or the nanometer pinpoint array structure of material surface, and this array structure is periodic; The cycle of described micro-nano structure is meant adjacent two the projection nano wire centre distances of optical grating construction, adjacent two line center distance in distance between adjacent two dot center of lattice structure and the linear array structure, and periodic regime is 100 nanometers to 5 micron.
5. method according to claim 4 is characterized in that: in the said linear array micro-nano structure, every nanowire length unanimity is 100 nanometers to 5 micron, and the cycle is adjacent two nano wire center distance.
6. method according to claim 1 is characterized in that: described method for laser interference lithography is two-beam interference photoetching or multi-beam interference photoetching.
7. method according to claim 1 is characterized in that: etching is dry etching or wet etching described in the step (3); Described dry etching is a reactive ion etching, uses oxygen, argon gas, sulfur hexafluoride, fluoroform or four negative methane gas to produce plasma, thereby produces the etching effect; Described wet etching uses strong base solution, and hydrofluoric acid etc. have corrosive solution to backing material.
8. method according to claim 1 is characterized in that: the used laser instrument of described laser interference lithography is the semiconductor or the gas laser of 633nm, 514nm, 355nm or 325nm wavelength.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103204460A (en) * | 2013-03-21 | 2013-07-17 | 北京工业大学 | Production method of metal micro-nano structure based on laser interference induced cross-linking reaction |
| CN103558368A (en) * | 2013-11-19 | 2014-02-05 | 长春理工大学 | Nano electrode array structure for measuring characteristics of biological cells and manufacturing method thereof |
| CN105084305A (en) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | Nano-structure and preparation method thereof |
| CN106444296A (en) * | 2016-10-31 | 2017-02-22 | 武汉光迅科技股份有限公司 | Photoetching method based on micro-nano structure |
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103204460A (en) * | 2013-03-21 | 2013-07-17 | 北京工业大学 | Production method of metal micro-nano structure based on laser interference induced cross-linking reaction |
| CN103204460B (en) * | 2013-03-21 | 2016-03-02 | 北京工业大学 | Based on the preparation method of the metal micro-nanostructure of laser interference induction cross-linking reaction |
| CN103558368A (en) * | 2013-11-19 | 2014-02-05 | 长春理工大学 | Nano electrode array structure for measuring characteristics of biological cells and manufacturing method thereof |
| CN103558368B (en) * | 2013-11-19 | 2015-12-30 | 长春理工大学 | A kind of biological cell feature measurement nano electrode array structure and manufacture method thereof |
| CN105084305A (en) * | 2015-06-17 | 2015-11-25 | 中国科学院微电子研究所 | Nano-structure and preparation method thereof |
| CN105084305B (en) * | 2015-06-17 | 2017-07-04 | 中国科学院微电子研究所 | A kind of nanostructured and preparation method thereof |
| CN106444296A (en) * | 2016-10-31 | 2017-02-22 | 武汉光迅科技股份有限公司 | Photoetching method based on micro-nano structure |
| CN110703577A (en) * | 2019-11-21 | 2020-01-17 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN110703577B (en) * | 2019-11-21 | 2022-03-04 | 苏州大学 | Preparation method of super-surface color hologram and optical system |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
| CN114654097B (en) * | 2022-02-24 | 2023-03-07 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
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Application publication date: 20121226 |