CN102651534A - Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography - Google Patents
Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography Download PDFInfo
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- CN102651534A CN102651534A CN201110043483XA CN201110043483A CN102651534A CN 102651534 A CN102651534 A CN 102651534A CN 201110043483X A CN201110043483X A CN 201110043483XA CN 201110043483 A CN201110043483 A CN 201110043483A CN 102651534 A CN102651534 A CN 102651534A
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Abstract
The invention discloses a distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography and belongs to the technical fields of nanometer photoelectron materials and devices. The preparation method comprises the following steps: 1) coating a substrate with recording medium in a spinning way, thus obtaining an uniform recording medium thin film with thickness of 50-500nm; 2) reacting a laser interference figure with the recording medium thin film, thus forming a high-quality recording medium distributed feedback type structure; 3) dissolving a fluorescence-emission organic semiconductor material in an organic solvant; 4) coating the recording medium distributed feedback type structure with the organic semiconductor solution in a spinning way, thus obtaining an organic semiconductor thin film with uniform thickness of 50-500nm. The preparation method is low in cost, excellent in repeatability and high in preparation efficiency, and can be used for preparing large-area, non-defective, one-dimensional and two-dimensional distributed feedback type organic semiconductor lasers; and the prepared two-dimensional organic semiconductor laser has a controllable structure.
Description
Technical field
The invention belongs to sub-material of nano photoelectric and device technology field; Relate to and utilize method for laser interference lithography to make large-area nanometer grating, be spin-coated on solutions of organic semiconductors the one peacekeeping Two dimensional Distribution reaction type organic semiconductor laser that can obtain controlling cycle on the nanometer grating.
Background technology
Distributed feed-back formula organic semiconductor laser is the research topic of extensive concern in the world, and is all significant in practical application and basic research.The traditional fabrication method of distributed feed-back formula structure has: electron beam lithography, reactive ion beam etching (RIBE), nanometer embossing etc.; But these method complex process, apparatus expensive, efficient are low, are unfavorable for the useful application exploitation of distributed feed-back formula organic semiconductor laser.And that interference lithography has technology is simple, can make the flawless various photonic crystal lattices of large tracts of land at low cost.The making of interference lithography being introduced distributed feed-back formula structure has important use value.
Summary of the invention
The present invention seeks to propose a kind of cavity configuration that utilizes laser interference lithography to make distributed feed-back formula laser, again organic semiconductor is spin-coated on the distributed feed-back formula structure, obtain one dimension or two-dimentional organic semiconductor laser.
The concrete scheme of organic semiconductor laser technology of preparing is following among the present invention:
1) recording medium is spin-coated in the substrate, spin speed is 500-4000rpm, is best with the rotating speed during for 1800rpm, obtains the uniform recording medium film of thickness, and the thickness of film is 50-500nm;
2) with laser interference pattern and recording medium membrane action, form high quality record dielectric distribution reaction type structure, laser interference photolithography technology prepares the light path sketch map of recording medium distributed feed-back formula structure and sees Fig. 1;
3) the fluorescent emission organic semiconducting materials is dissolved in the organic solvent, processes the solutions of organic semiconductors that concentration is 10-150mg/ml;
4) solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, spin speed is 500-4000rpm, is best with the rotating speed during for 2000rpm, obtains the uniform organic semiconductor thin-film of thickness, film thickness be 50-500nm.
On the basis of the above-mentioned one dimension recording medium distributed feed-back formula structure that has realized, sample around its normal half-twist, is carried out the second time again and interferes exposure, can realize the preparation of two-dimentional recording medium distributed feed-back formula structure.
Described fluorescent emission organic semiconducting materials is: 9, and 9-dioctyl fluorene-2,7)-alternating copolymerization-(1,4-{2; 1 ', the 3}-diazosulfide) (F8BT), (9,9-dioctyl fluorene-2; 7)-and copolymerization-two (4-methoxyphenyl)-fluorenes (F8DP), (9,9-dioctyl fluorene-2,7)-copolymerization-two-N; N '-(4-butyl phenyl)-two-N, N '-phenyl-1,4-phenylenediamine (PFB) etc.; Described organic solvent is a kind of in xylenes, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or the octane; Substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip etc.; Interfering the erosion Ultra-Violet Laser light source that burns is the high energy pulse laser of wavelength smaller or equal to 400nm.
Advantageous feature of the present invention:
1) the inventive method need not to use expensive equipment, and cost is low, can prepare the flawless one dimension of large tracts of land, Two dimensional Distribution reaction type organic semiconductor laser, good reproducibility, and preparation efficiency is high.
2) the prepared distributed feed-back formula organic semiconductor laser controlling cycle of the present invention.Through the interference angle α of change optical interference circuit, but just manufacturing cycle is the recording medium distributed feed-back formula structure of 200nm-2000nm.
3) the prepared two-dimentional organic semiconductor laser controllable structure of the present invention.Change the β angle simultaneously through multiple beam single exposure or dual-beam multiexposure, multiple exposure, just can prepare various two-dimension periodics, accurate crystalline substance and non crystalline structure.
Description of drawings
Fig. 1, laser interference photolithography technology prepare the light path sketch map of distributed feed-back formula structure
Wherein, 1 is the pulsed ultraviolet laser device; 2 is to expand bundle to use set of lenses; 3 is the deielectric-coating total reflective mirror; 4 is beam splitter; 5 is sample to be processed
AFM (AFM) photo of Fig. 2, the one dimension recording medium distributed feed-back formula structure that obtained
Embodiment
Embodiment 1: the preparation (one-dimentional structure) of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, the used optical maser wavelength of interference lithography is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) atomic force microscopy image of prepared one dimension distributed feed-back formula structure is as shown in Figure 2, and under the situation of α=22 °, the cycle of prepared organic semiconductor grating is 355nm.
4) organic semiconductor F8BT is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
5) the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1000rpm, and corresponding thickness is 200nm.
Embodiment 2: the preparation of Two dimensional Distribution reaction type structure (two-dimension square structure)
On the basis of the one dimension distributed feed-back formula structure technology of preparing that embodiment 1 has realized, sample around its normal half-twist, is carried out the second time again and interferes exposure, can realize the preparation of Two dimensional Distribution reaction type structure; Then the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, can obtains the organic organic semiconductor laser of Two dimensional Distribution reaction type.
Embodiment 3: the preparation of Two dimensional Distribution reaction type structure (two-dimentional three-legged structure)
On the basis of the one dimension distributed feed-back formula structure technology of preparing that embodiment 1 has realized, sample around 60 ° of its normal rotations, is carried out the second time again and interferes exposure, can realize the preparation of Two dimensional Distribution reaction type structure; Then the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, can obtains the organic organic semiconductor laser of Two dimensional Distribution reaction type.
Embodiment 4: the preparation of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, optical maser wavelength is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor F8BT is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the F8BT solutions of organic semiconductors of 25mg/ml;
4) the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1400rpm, and corresponding thickness is 200nm.
Embodiment 5: the preparation of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, optical maser wavelength is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor PFB is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the PFB solutions of organic semiconductors of 15mg/ml;
4) the PFB solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1000rpm, and corresponding thickness is 200nm.
Embodiment 6: the preparation of one dimension organic semiconductor nanometer grating structure
1) on being spin-coated on recording medium S1805 photoresist at the bottom of the silicon wafer-based.Spin speed is 2000rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, optical maser wavelength is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor F8BT is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
4) the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1000rpm, and corresponding thickness is 200nm.
Embodiment 7: the preparation of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, optical maser wavelength is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor PFB is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the PFB solutions of organic semiconductors of 15mg/ml;
4) the PFB solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 800rpm, and corresponding thickness is 300nm.
Embodiment 8: the preparation of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=22 ° wherein, optical maser wavelength is 355nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor F8BT is dissolved in the organic solvents such as chloroform or cyclohexane, processing concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
4) the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1000rpm, and corresponding thickness is 200nm.
Embodiment 9: the preparation of one dimension organic semiconductor nanometer grating structure
1) recording medium S1805 photoresist is spin-coated on the substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 500nm;
2) the photoresist film sample with above-mentioned preparation places optical interference circuit; As shown in Figure 1; The angle of two light beams=36 ° wherein, optical maser wavelength is 405nm, can on photoresist film, note interference fringe; Then with the photoresist sample develop, photographic fixing, can obtain periodic one dimension distributed feed-back formula structure;
3) organic semiconductor F8BT is dissolved in the organic solvents such as toluene or xylenes, processing concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
4) the F8BT solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, obtains the organic organic semiconductor laser of one dimension distributed feed-back formula.Spin speed is 1000rpm, and corresponding thickness is 200nm.
Claims (6)
1. based on the distributed feed-back formula organic semiconductor laser manufacture method of laser interference lithography, it is characterized in that, may further comprise the steps:
1) recording medium is spin-coated in the substrate, spin speed is 500-4000rpm, obtains the uniform recording medium film of thickness, and the thickness of film is 50-500nm;
2), form high quality record dielectric distribution reaction type structure with laser interference pattern and recording medium membrane action;
3) the fluorescent emission organic semiconducting materials is dissolved in the organic solvent, processes the solutions of organic semiconductors that concentration is 10-150mg/ml;
4) solutions of organic semiconductors is spin-coated on the recording medium distributed feed-back formula structure, spin speed is 500-4000rpm, obtains the uniform organic semiconductor thin-film of thickness, film thickness be 50-500nm.
2. according to the method for claim 1, it is characterized in that step 2) also comprise: on the basis of the above-mentioned one dimension recording medium distributed feed-back formula structure that has realized, sample around its normal half-twist, is carried out interfering the second time exposure again.
3. according to the method for claim 1, it is characterized in that described fluorescent emission organic semiconducting materials is: 9,9-dioctyl fluorene-2,7)-alternating copolymerization-(1; 4-{2,1 ', the 3}-diazosulfide) (F8BT), (9; 9-dioctyl fluorene-2,7)-copolymerization-two (4-methoxyphenyl)-fluorenes (F8DP), (9,9-dioctyl fluorene-2; 7)-and copolymerization-two-N, N '-(4-butyl phenyl)-two-N, N '-phenyl-1,4-phenylenediamine (PFB).
4. according to the method for claim 1, it is characterized in that organic solvent is a kind of in xylenes, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or the octane.
5. according to the method for claim 1, it is characterized in that substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip.
6. according to the method for claim 1, it is characterized in that interfering the erosion Ultra-Violet Laser light source that burns is the high energy pulse laser of wavelength smaller or equal to 400nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102838082A (en) * | 2012-09-24 | 2012-12-26 | 复旦大学 | Method for preparing micro-nano structure on material surface based on laser interference photolithography |
| CN104882780A (en) * | 2015-06-10 | 2015-09-02 | 北京工业大学 | Preparation method of thin-film type organic polymer laser |
| CN105226500A (en) * | 2015-05-08 | 2016-01-06 | 北京工业大学 | Flexible tunable multi-wavelength organic semiconductor laser and preparation method |
| CN107681463A (en) * | 2017-11-15 | 2018-02-09 | 苏州大学 | Polymer laser of continuous optical pumping and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010021204A1 (en) * | 2000-03-09 | 2001-09-13 | Taiyo Yuden Co., Ltd | Thin film laser emitting device and method for the manufacture thereof |
| WO2002071557A2 (en) * | 2001-03-06 | 2002-09-12 | Shayda Technologies, Inc. | Polymeric waveguide laser and amplifier |
| CN101388523A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Novel organic semi-conductor solid laser and preparation thereof |
| JP2010015874A (en) * | 2008-07-04 | 2010-01-21 | Kyoto Institute Of Technology | Organic optical device, method of manufacturing the same, and method of manufacturing amplified or narrowed light |
-
2011
- 2011-02-23 CN CN201110043483XA patent/CN102651534A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010021204A1 (en) * | 2000-03-09 | 2001-09-13 | Taiyo Yuden Co., Ltd | Thin film laser emitting device and method for the manufacture thereof |
| WO2002071557A2 (en) * | 2001-03-06 | 2002-09-12 | Shayda Technologies, Inc. | Polymeric waveguide laser and amplifier |
| JP2010015874A (en) * | 2008-07-04 | 2010-01-21 | Kyoto Institute Of Technology | Organic optical device, method of manufacturing the same, and method of manufacturing amplified or narrowed light |
| CN101388523A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Novel organic semi-conductor solid laser and preparation thereof |
Non-Patent Citations (4)
| Title |
|---|
| 《CHINESE OPTICS LETTERS》 20080210 zhao xuanke,et al polymer gratings based on photopolymerization for low-order distributed feedback polymer lasers 90-92 1-6 第6卷, 第2期 * |
| VICTOR NAVARRO-FUSTER, ET AL: "highly photostable organic distributed feedback laser emitting at 573nm", 《APPLIED PHYSICS LETTERS》 * |
| ZHAO XUANKE,ET AL: "polymer gratings based on photopolymerization for low-order distributed feedback polymer lasers", 《CHINESE OPTICS LETTERS》 * |
| 周进波: "用于有机半导体激光器的新型聚合物光栅", 《清华大学硕士学位论文》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102838082A (en) * | 2012-09-24 | 2012-12-26 | 复旦大学 | Method for preparing micro-nano structure on material surface based on laser interference photolithography |
| CN105226500A (en) * | 2015-05-08 | 2016-01-06 | 北京工业大学 | Flexible tunable multi-wavelength organic semiconductor laser and preparation method |
| CN105226500B (en) * | 2015-05-08 | 2018-03-30 | 北京工业大学 | Flexible tunable multi-wavelength organic semiconductor laser and preparation method |
| CN104882780A (en) * | 2015-06-10 | 2015-09-02 | 北京工业大学 | Preparation method of thin-film type organic polymer laser |
| WO2016197423A1 (en) * | 2015-06-10 | 2016-12-15 | 北京工业大学 | Manufacturing method of thin film laser of organic polymer |
| US9667035B1 (en) | 2015-06-10 | 2017-05-30 | Beijing University Of Technology | Method for preparing organic polymer thin film laser |
| CN104882780B (en) * | 2015-06-10 | 2017-10-13 | 北京工业大学 | A kind of preparation method of film-type organic polymer laser |
| CN107681463A (en) * | 2017-11-15 | 2018-02-09 | 苏州大学 | Polymer laser of continuous optical pumping and preparation method thereof |
| CN107681463B (en) * | 2017-11-15 | 2019-10-22 | 苏州大学 | The polymer laser and preparation method thereof of continuous optical pumping |
| US10879670B2 (en) | 2017-11-15 | 2020-12-29 | Soochow University | Continuous-wave pumped polymer laser and preparation method thereof |
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Application publication date: 20120829 |