CN105226500A - Flexible tunable multi-wavelength organic semiconductor laser and preparation method - Google Patents
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- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000010276 construction Methods 0.000 claims abstract description 8
- 238000005086 pumping Methods 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 claims abstract description 4
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
Flexible tunable multi-wavelength organic semiconductor laser and preparation method, belong to field of photoelectric technology.The optical grating construction of multiple different cycles is produced in same flexible substrate with different angles, flexible substrate bend deformation time, the cycle of all gratings all will change, thus form the multi-wavelength tunable organic semiconductor laser based on two-dimentional composite grating structure.Its making comprises the following steps: 1) prepare organic semiconducting materials organic solution; 2) by solutions of organic semiconductors spin coating on a flexible substrate, the uniform organic semiconductor thin-film of thickness is obtained; 3) by strong ultraviolet laser interference figure and organic semiconductor thin-film effect, organic semiconductor thin-film directly writes out the composite grating structure of different cycles, different directions respectively; 4) composite grating structure bend deformation time, this structure of pumping can obtain multi-wavelength tunable Laser output.The present invention is with low cost, can prepare large area organic semiconductor laser, and reproducible, preparation efficiency is high.
Description
Technical field
The present invention relates to a kind of organic semiconductor laser realizing multi-wavelength tunable on flexible substrates, belong to field of photoelectric technology.
Background technology
Early 1960s, the people such as former Soviet Union Basov propose the concept of semiconductor laser, this concept once proposition, the superior function just had because of semiconductor laser and receive extensive concern.1992, DanielMoses found that the xylene solution of MEH-PPV can send laser, and its quantum yield can compare favourably with Rhodamine6G.1996, MEH-PPV was mixed in PS matrix by Heeger group of the U.S., and adds appropriate TiO
2nanocrystal, makes the film of thickness micron dimension (typical thickness is 200um).Under the pumping of 532nm pulse laser, observe gain narrowing phenomenon.1996, the sharp of micro polymer cavity laser having reported optical pumping that the Friend group in univ cambridge uk's all one's life laboratory is detailed first penetrated behavior.1998, the Heeger group of the U.S. achieved the stimulated emission of optical pumping in BuEH-PPV film, obtains the organic luminescent device with high-quantum efficiency, high-gain coefficient, low lasing threshold.
In recent years, DFB laser has become the popular research field of international laser educational circles.Distributed Feedback Laser has the advantages such as good stability, volume be little, cheap, has a wide range of applications in all many-sides such as display, illumination, medical treatment, detection, storages.
The laser that multi-wavelength exports has a wide range of applications in photoelectron technology, therefore how to provide a kind of accidental laser of convenient, quick tuning wavelength, is one of current study hotspot.The present invention, just based on above consideration, proposing a kind of multi-wavelength Distributed Feedback Laser by realizing tunable output on flexible substrates, having the feature of convenient and swift tuning multi-wavelength.
Summary of the invention
The present invention seeks to propose a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate, it is characterized in that, its structure is produced in same flexible substrate by the optical grating construction of multiple different cycles with different angles, flexible substrate bend deformation time, the cycle of all gratings all will change, thus form the multi-wavelength tunable organic semiconductor laser based on two-dimentional composite grating structure.
In the present invention, the specific solution of flexible tunable multi-wavelength organic semiconductor laser is as follows:
1) organic semiconducting materials is dissolved in organic solvent, make the solutions of organic semiconductors that concentration is 10-60mg/ml;
2) by solutions of organic semiconductors spin coating on a flexible substrate, spin speed is 500-4000rpm, and obtain the uniform organic semiconductor thin-film of thickness, the thickness of film is 50-500nm;
3) by Ultra-Violet Laser interference figure and organic semiconductor thin-film effect, organic semiconductor thin-film directly writes out the grating of different cycles respectively, each grating orientation is all different, forms high-quality organic semiconductor composite grating structure.
Fluorescent emission organic semiconducting materials described above is: 9,9-dioctyl fluorene-2,7)-alternating copolymerization-(1,4-{2,1 ', 3}-diazosulfide) (F8BT), (9,9-dioctyl fluorene-2,7)-copolymerization-two (4-methoxyphenyl)-fluorenes (F8DP), (9,9-dioctyl fluorene-2,7)-copolymerization-bis--N, N '-(4-butyl phenyl)-bis--N, N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB) etc.; Described organic solvent is the one in dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or octane; Substrate is selected from PETG (PET), polymethyl methacrylate (PMMA), polyether-ether-ketone (PEEK), polyethylene (PE), polypropylene (PP), polystyrene (PS), polyethylene naphthalate (PEN), polyimides (PI) etc.; The erosion Ultra-Violet Laser light source that burns is interfered to be the high energy pulse laser that wavelength is less than or equal to 400nm.
When adopting the flexible laser device sample in mechanical bend the present invention, optical grating construction originally can along with the increase of the deformation generating period of substrate or reduction, thus produce the output wavelength of new laser, and along with the difference of deformation, can there is blue shift and red shift in the emission wavelength of multi-wavelength organic semiconductor laser.
Mechanical bend Tuning Principle: thickness is t (can directly measure), length is h
1when the flexible substrate of (can directly measure) bends to the arcuate structure that 2 α (can directly measure) spend, its upper surface length will increase/reduce, cause the grating period A (can directly measure) being attached to its surface will increase/reduce, thus cause laser emission wavelength red shift/basket to move △ λ, what wherein there was optical grating construction on surface is upper surface, upwards surface direction bends, grating period A (can directly measure) will reduce, upper surface direction bends dorsad, and grating period A (can directly measure) will increase.Meet formula: △ λ=Λ t α/h
1,Λ, t, h
1unit be the unit of nm, α be radian.
Adopt technical scheme of the present invention can obtain a series of tunable output multi-wavelength Distributed Feedback Laser.Composite grating structure bend deformation time, this structure of pumping can obtain multi-wavelength tunable Laser output.The present invention is with low cost, can prepare large area organic semiconductor laser, and reproducible, preparation efficiency is high.
Accompanying drawing explanation
Accompanying drawing 1 is that the two-beam interference that in the present invention prepared by optical grating construction directly writes light path.
Wherein, 1 is ultraviolet pulse laser; 2 is beam splitter; 3 is deielectric-coating total reflective mirror; 4 is sample to be processed
Accompanying drawing 2 is generation schematic diagrams of laser in the present invention.
Wherein, 1 is flexible substrate; 2 is optical grating construction; 3 is ultraviolet pulse laser; 4 is diffracted beam feedback path in grating; 5 is Laser output
Accompanying drawing 3 is atomic force microscope (AFM) photos of obtained two-dimentional organic semiconductor composite grating structure.
Wherein, (a) is rectangle lattice structure; B () is scalene triangle lattice structure
Accompanying drawing 4 is Emission Lasers photos of the laser in the present invention.
Wherein, (a) is the dual-wavelength laser launch spot based on rectangle lattice structure; B () is the three-wavelength Laser emission hot spot based on scalene triangle lattice structure
Accompanying drawing 5 is the laser emission wavelength mechanical bend Tuning Principle figure in the present invention.
Wherein flexible substrate thickness is t (can directly measure), length is h
1(can directly measure), bending rear chord length are h
2(can directly measure), angle of bend are 2 α, radius of curvature is r, and (value of α and r is by simultaneous formula h
1=2r α and h
2=2rsin (α) calculates), its up/down length surface will increase/reduce △ L=t α, cause the grating period A being attached to its surface will increase/reduce △ Λ=△ L/ (h
1/ Λ), thus cause laser emission wavelength red shift/basket to move △ λ.Meet formula: △ λ=△ Λ=Λ t α/h
1.
Accompanying drawing 6 is the tuning experimental spectrum figure of laser emission wavelength mechanical bend in the present invention.
Accompanying drawing 7 is repeated experiments of the laser emission wavelength mechanical bend continuous tuning in the present invention.
Wherein, wavelength change theoretical calculation formula is: △ λ=△ Λ=Λ t α/h
1.
Embodiment
Below in conjunction with embodiment, the present invention is described in detail, but the present invention is not limited to following examples.
Embodiment 1: two-dimentional scalene triangle lattice organic semiconductor laser
(1) added by 20mgF8BT in 1ml dimethylbenzene, 60 DEG C of heating make it dissolve completely, are mixed with the F8BT solution of 20mg/ml;
(2) select PET sheet as flexible substrates (length and width are respectively 20mm, thickness 0.4mm), by the spin coating of F8BT solution into about the thick film of 120nm;
(3) pulse laser (the pulsewidth 5ns put up is utilized, pulse energy 60mj, repetition rate 1Hz) optical interference circuit directly writes out the grating of different cycles respectively on F8BT film, three cycles are respectively 355nm, 360nm and 365nm, three grating orientations between two angle are 60 °, and finally form solid sample, the AFM photo of its surface topography is as shown in Fig. 3 (b);
(4) solid sample is irradiated with the femtosecond pulse (pulsewidth is 200fs, and pump frequency is 1kHz) of 400nm as pump light;
(5) as shown in Fig. 3 (b), the common intersection of many bright lines is Laser emission hot spot;
(6) by the mode of mechanical bend substrate by degree different for sample bent, realize exporting the tuning of three-wavelength organic semiconductor laser, as shown in Figure 6.Wherein flexible substrate thickness t=4 × 10
5nm, length h
1=2 × 10
7nm, bending rear length h
2=1.8 × 10
7nm.
(7) the wavelength continuous tuning of this structure is highly stable, more identical with theoretical value.Fig. 7 is its mechanical bend reperformance test result.
The present invention proposes a kind of tunable multi-wavelength organic semiconductor laser based on flexible substrates, above display and describe general principle of the present invention and main manufacture method.
Embodiment 2
By the mutually perpendicular grating replacing with two different cycles of the scalene triangle lattice structure in embodiment 1, as the rectangle lattice structure of a in accompanying drawing 3 and 4, obtain good effect equally.
Claims (7)
1. the multi-wavelength tunable organic semiconductor laser based on flexible substrate, it is characterized in that, its structure is produced in same flexible substrate by the optical grating construction of multiple different cycles with different angles, flexible substrate bend deformation time, the cycle of all gratings all will change, thus form the multi-wavelength tunable organic semiconductor laser based on two-dimentional composite grating structure.
2. a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate according to claim 1, it is characterized in that, its manufacture method comprises the following steps:
1) organic semiconducting materials is dissolved in organic solvent, make the solutions of organic semiconductors that concentration is 10-60mg/ml;
2) by solutions of organic semiconductors spin coating on a flexible substrate, spin speed is 500-4000rpm, and obtain the uniform organic semiconductor thin-film of thickness, the thickness of film is 50-500nm;
3) by Ultra-Violet Laser interference figure and organic semiconductor thin-film effect, organic semiconductor thin-film directly writes out the grating of different cycles respectively, each grating orientation is all different, forms high-quality organic semiconductor composite grating structure;
4), during composite grating structure generation deformation, this structure of pumping can obtain multi-wavelength tunable Laser output.
3. according to the method for claim 2, it is characterized in that, described organic semiconductor is 9,9-dioctyl fluorene-2,7)-alternating copolymerization-(1,4-{2,1 ', 3}-diazosulfide) (F8BT), (9,9-dioctyl fluorene-2,7)-copolymerization-two (4-methoxyphenyl)-fluorenes (F8DP) or (9,9-dioctyl fluorene-2,7)-copolymerization-bis--N, N '-(4-butyl phenyl)-bis--N, one in N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB).
4. according to the method for claim 2, it is characterized in that, described organic solvent is the one in dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or octane.
5. according to the method for claim 2, it is characterized in that, described flexible substrates is the one in PETG (PET), polymethyl methacrylate (PMMA), polyether-ether-ketone (PEEK), polyethylene (PE), polypropylene (PP), polystyrene (PS), polyethylene naphthalate (PEN) or polyimides (PI).
6. according to the method for claim 2, it is characterized in that, interfere the erosion Ultra-Violet Laser light source that burns to be the high energy pulse laser that wavelength is less than or equal to 400nm.
7. according to the multi-wavelength tunable organic semiconductor laser of claim 1 one kind based on flexible substrate, it is characterized in that, it is characterized in that, thickness is t, length is h
1flexible substrate when bending to the arcuate structure of 2 α degree, its upper surface length will increase/reduce, cause the grating period A being attached to its surface will increase/reduce, thus cause laser emission wavelength red shift/basket to move △ λ, what wherein there was optical grating construction on surface is upper surface, and upwards surface direction bends, grating period A will reduce, upper surface direction bends dorsad, and grating period A will increase, and meet formula: △ λ=Λ t α/h
1, Λ, t, h
1unit be the unit of nm, α be radian, record bending after chord length be h
2, angle of bend is 2 α, radius of curvature is that the value of r, α and r is by simultaneous formula h
1=2r α and h
2=2rsin (α) calculates.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957964A (en) * | 2016-05-03 | 2016-09-21 | 南京邮电大学 | Flexible organic semiconductor laser and manufacturing method thereof |
| CN110137799A (en) * | 2019-05-29 | 2019-08-16 | 北京工业大学 | A kind of adjustable composite chamber laser in laser emitting direction |
| CN110429470A (en) * | 2019-05-29 | 2019-11-08 | 北京工业大学 | A kind of adjustable chamber coupled mode Distributed Feedback Laser of shoot laser polarization state |
| CN111682398A (en) * | 2020-06-11 | 2020-09-18 | 南京邮电大学 | Wavelength-tunable organic thin-film laser device based on photoresponse and application thereof |
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2015
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| JPH0251497A (en) * | 1988-08-12 | 1990-02-21 | Nippon Telegr & Teleph Corp <Ntt> | Formation of semiconductor thin film |
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| C.FOUCHER: "Diode-pumped, mechanically-flexible polymer DFB laser encapsulated by glass membranes", 《OPTICS EXPRESS》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957964A (en) * | 2016-05-03 | 2016-09-21 | 南京邮电大学 | Flexible organic semiconductor laser and manufacturing method thereof |
| CN110137799A (en) * | 2019-05-29 | 2019-08-16 | 北京工业大学 | A kind of adjustable composite chamber laser in laser emitting direction |
| CN110429470A (en) * | 2019-05-29 | 2019-11-08 | 北京工业大学 | A kind of adjustable chamber coupled mode Distributed Feedback Laser of shoot laser polarization state |
| CN111682398A (en) * | 2020-06-11 | 2020-09-18 | 南京邮电大学 | Wavelength-tunable organic thin-film laser device based on photoresponse and application thereof |
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