CN105226500B - Flexible tunable multi-wavelength organic semiconductor laser and preparation method - Google Patents
Flexible tunable multi-wavelength organic semiconductor laser and preparation method Download PDFInfo
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- CN105226500B CN105226500B CN201510233259.5A CN201510233259A CN105226500B CN 105226500 B CN105226500 B CN 105226500B CN 201510233259 A CN201510233259 A CN 201510233259A CN 105226500 B CN105226500 B CN 105226500B
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Abstract
Flexible tunable multi-wavelength organic semiconductor laser and preparation method, belong to field of photoelectric technology.The optical grating construction of multiple different cycles is produced in same flexible substrate with different angle, flexible substrate bend deformation when, the cycle of all gratings will all change, so as to form the multi-wavelength tunable organic semiconductor laser based on two-dimentional composite grating structure.Its making comprises the following steps：1) organic semiconducting materials organic solution is prepared；2) organic semiconductor thin-film in uniform thickness by solutions of organic semiconductors spin coating on a flexible substrate, is obtained；3) strong ultraviolet laser interference figure and organic semiconductor thin-film are acted on, direct write goes out the composite grating structure of different cycles, different directions respectively on organic semiconductor thin-film；4) composite grating structure bend deformation when, the pumping structure can obtain multi-wavelength tunable laser output.Cost of the present invention is cheap, can prepare large area organic semiconductor laser, reproducible, and preparation efficiency is high.
Description
Technical field
The present invention relates to a kind of organic semiconductor laser for realizing multi-wavelength tunable on flexible substrates, belong to photoelectricity
Technical field.
Background technology
In the early 1960s, former Soviet Union Basov et al. proposes the concept of semiconductor laser, this concept is once carrying
Go out, just receive extensive concern because of the superior function that semiconductor laser has.1992, Daniel Moses had found MEH-
PPV xylene solution can send laser, and its quantum yield can compare favourably with Rhodamine 6G.1996, the U.S.
MEH-PPV is mixed into PS matrix by Heeger groups, and adds appropriate TiO2Nanocrystal, thickness is made in micron dimension
The film of (typical thickness 200um).Under the pumping of 532nm pulse lasers, it was observed that gain narrowing phenomenon.1996, English
The Friend groups in Cambridge University of the state all one's life laboratory polymer micro-cavity laser for having reported optical pumping detailed first
Laser action.1998, the Heeger groups in the U.S. realized the stimulated emission of optical pumping in BuEH-PPV films, obtained
There is high-quantum efficiency, high-gain coefficient, the organic luminescent device of low lasing threshold.
In recent years, DFB laser has become the popular research field of international laser educational circles.Distributed Feedback Laser has stability
Good, small volume, it is cheap the advantages that, before all many-sides such as display, illumination, medical treatment, detection, storage have a wide range of applications
Scape.
The laser of multi-wavelength output is had a wide range of applications in photoelectron technology, therefore how to provide one kind just
The accidental laser of prompt, quick tuning wavelength, it is one of current study hotspot.The present invention is based on considerations above, proposes
A kind of multi-wavelength Distributed Feedback Laser by realizing tunable output on flexible substrates, has a convenient and swift tuning multi-wavelength
The characteristics of.
The content of the invention
The present invention seeks to propose a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate, its feature
It is, its structure is to be produced on the optical grating construction of multiple different cycles in same flexible substrate with different angle, flexible liner
Bottom bend deformation when, the cycle of all gratings will all change, so as to be formed based on the more of two-dimentional composite grating structure
Tunable wave length organic semiconductor laser.
The specific solution of flexible tunable multi-wavelength organic semiconductor laser is as follows in the present invention：
1) it is molten that the organic semiconductor that concentration is 10-60mg/ml by organic semiconducting materials dissolving in organic solvent, is made
Liquid；
2) by solutions of organic semiconductors spin coating on a flexible substrate, spin speed 500-4000rpm, it is uniform to obtain thickness
Organic semiconductor thin-film, the thickness of film is 50-500nm；
3) Ultra-Violet Laser interference figure and organic semiconductor thin-film are acted on, direct write goes out respectively on organic semiconductor thin-film
The grating of different cycles, each grating orientation is different, forms the organic semiconductor composite grating structure of high quality.
Fluorescent emission organic semiconducting materials described above are：9,9- dioctyl fluorenes -2,7)-alternating copolymerization-(Isosorbide-5-Nitrae -
{ 2,1 ', 3 }-diazosulfide) (F8BT),-two (4- methoxyphenyls)-fluorenes (F8DP) of (9,9- dioctyl fluorene -2,7)-copolymerization,
(9,9- dioctyl fluorene -2,7)-copolymerization-bis--N, N '-(4- butyl phenyls)-bis--N, N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB) etc.；
Described organic solvent is in dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, hexamethylene, pentane, hexane or octane
One kind；Substrate is selected from polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polyether-ether-ketone
(PEEK), polyethylene (PE), polypropylene (PP), polystyrene (PS), polyethylene naphthalate (PEN), polyimides
(PI) etc.；Interference burns erosion Ultra-Violet Laser light source for high energy pulse laser of the wavelength less than or equal to 400nm.
When using the flexible laser device sample in the mechanical bend present invention, the optical grating construction of script can be with the shape of substrate
Become the increase or reduction of generating period, so as to produce the output wavelength of new laser, and as the difference of deformation, multi-wavelength have
Blue shift and red shift can occur for the launch wavelength of machine semiconductor laser.
Mechanical bend Tuning Principle：Thickness is t (can direct measurement), length h1The flexible substrate of (can direct measurement) is curved
During bent arcuate structure into 2 α (can direct measurement) degree, increase/reduction is caused the light for being attached to its surface by length surface thereon
Grid cycle Λ (can direct measurement) is by increase/reduction, and so as to cause laser emission wavelength red shift/basket to move △ λ, there is light on wherein surface
Grid structure for upper surface, upward surface direction bending, grating period A (can direct measurement) will reduce, backwards to upper surface direction
Bending, grating period A (can direct measurement) will increases.Meet formula：△ λ=Λ t α/h1,Λ、t、h1Unit be nm, α's
Unit is radian.
A series of multi-wavelength Distributed Feedback Laser of tunable outputs is can obtain using technical scheme.Complex light
Grid structure bend deformation when, the pumping structure can obtain multi-wavelength tunable laser output.Cost of the present invention is cheap, can make
Standby large area organic semiconductor laser, reproducible, preparation efficiency is high.
Brief description of the drawings
Accompanying drawing 1 is the two-beam interference direct write light path that in the present invention prepared by optical grating construction.
Wherein, 1 is ultraviolet pulse laser；2 be beam splitter；3 be deielectric-coating total reflective mirror；4 be sample to be processed
Accompanying drawing 2 is the generation schematic diagram of laser in the present invention.
Wherein, 1 is flexible substrate；2 be optical grating construction；3 be ultraviolet pulse laser；4 be that diffracted beam feeds back road in grating
Line；5 be that laser exports
Accompanying drawing 3 is AFM (AFM) photo of the two-dimentional organic semiconductor composite grating structure obtained.
Wherein, (a) is rectangle lattice structure；(b) it is scalene triangle lattice structure
Accompanying drawing 4 is the transmitting laser photo of the laser in the present invention.
Wherein, (a) is the dual-wavelength laser launch spot based on rectangle lattice structure；(b) it is based on scalene triangle
Three wavelength laser launch spots of lattice structure
Accompanying drawing 5 is the laser emission wavelength mechanical bend Tuning Principle figure in the present invention.
Wherein flexible substrate thickness is t (can direct measurement), length h1Chord length is h after (can direct measurement), bending2
(can direct measurement), angle of bend be 2 α, radius of curvature is that (α and r value can be by simultaneous formula hs by r1=2r α and h2=2rsin
(α) is calculated), increase/reduction △ L=t α are caused the grating period A for being attached to its surface will by thereon/lower surface length
Increase/reduction △ Λ=△ L/ (h1/ Λ), so as to cause laser emission wavelength red shift/basket to move △ λ.Meet formula：△ λ=△
Λ=Λ t α/h1。
Accompanying drawing 6 is the laser emission wavelength mechanical bend tuning experimental spectrum figure in the present invention.
Accompanying drawing 7 is the repeated experiment of the laser emission wavelength mechanical bend continuous tuning in the present invention.
Wherein, wavelength change theoretical calculation formula is：△ λ=△ Λ=Λ t α/h1。
Embodiment
The present invention is described in detail with reference to embodiment, but the present invention is not limited to following examples.
Embodiment 1：Two-dimentional scalene triangle lattice organic semiconductor laser
(1) 20mg F8BT are added in 1ml dimethylbenzene, 60 DEG C of heating are completely dissolved it, are configured to 20mg/ml's
F8BT solution；
(2) select PET sheet as flexible substrates (length and width are respectively 20mm, thickness 0.4mm), by the spin coating of F8BT solution into
Film thick about 120nm；
(3) existed using pulse laser (pulsewidth 5ns, pulse energy 60mj, the repetition rate 1Hz) optical interference circuit put up
Direct write goes out the grating of different cycles respectively on F8BT films, and three cycles are respectively 355nm, 360nm and 365nm, three gratings
Angle is 60 ° two-by-two in direction, ultimately forms solid sample, shown in AFM photos such as Fig. 3 (b) of its surface topography；
(4) consolidated with 400nm femtosecond pulse (pulsewidth 200fs, pump frequency 1kHz) as pumping light irradiation
Body sample；
(5) as shown in Fig. 3 (b), the common intersection of a plurality of bright line is Laser emission hot spot；
(6) by way of mechanical bend substrate by the degree that sample bent is different, realize output three wavelength are organic and partly lead
The tuning of volumetric laser, as shown in Figure 6.Wherein flexible substrate thickness t=4 × 105Nm, length h1=2 × 107Length after nm, bending
h2=1.8 × 107nm。
(7) the wavelength continuous tuning of the structure is highly stable, is relatively coincide with theoretical value.Fig. 7 repeats for its mechanical bend
Property test result.
The present invention proposes a kind of tunable multi-wavelength organic semiconductor laser based on flexible substrates, the above show and
Describe the general principle of the present invention and main preparation method.
Embodiment 2
By the mutually perpendicular light for replacing with two different cycles of the scalene triangle lattice structure in embodiment 1
Grid, such as the rectangle lattice structure of a in accompanying drawing 3 and 4, equally obtain good effect.
Claims (5)
1. a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate, it is characterised in that its structure is will be more
The optical grating construction of individual different cycles is produced in same flexible substrate with different angle, flexible substrate bend deformation when,
The cycle of all gratings will all change, and so as to be formed, the multi-wavelength tunable based on two-dimentional composite grating structure is organic partly to lead
Body laser；Its preparation method comprises the following steps：
1) solutions of organic semiconductors that concentration is 10-60mg/ml by organic semiconducting materials dissolving in organic solvent, is made；
2) by solutions of organic semiconductors spin coating on a flexible substrate, spin speed 500-4000rpm, acquisition is in uniform thickness to be had
Machine semiconductive thin film, the thickness of film is 50-500nm；
3) Ultra-Violet Laser interference figure and organic semiconductor thin-film are acted on, direct write goes out difference respectively on organic semiconductor thin-film
The grating in cycle, each grating orientation is different, forms the organic semiconductor composite grating structure of high quality；
4) when composite grating structure deforms upon, the pumping structure can obtain the output of multi-wavelength tunable laser；
Thickness is t, length h1Flexible substrate when bending to the arcuate structure of 2 α degree, length surface is by increase/reduction thereon,
Cause to be attached to the grating period A on its surface by increase/reduction, so as to cause laser emission wavelength red shift/basket to move △ λ, wherein
There is being bent for upper surface, upward surface direction for optical grating construction on surface, and grating period A will reduce, curved backwards to upper surface direction
Song, grating period A will increase, and meet formula：△ λ=Λ t α/h1, Λ, t, h1Unit be nm, α unit is radian, is measured
Chord length is h after bending2, angle of bend be 2 α, radius of curvature r, α and r value can be by simultaneous formula h1=2r α and h2=
2rsin (α) is calculated.
2. according to a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate described in claim 1, it is special
Sign is that the organic semiconductor is 9,9- dioctyl fluorenes -2,7)-alternating copolymerization-(Isosorbide-5-Nitrae-{ 2,1 ', 3 }-diazosulfide)
(F8BT), (9,9- dioctyl fluorene -2,7)-copolymerization-two (4- methoxyphenyls)-fluorenes (F8DP) or (9,9- dioctyl fluorene -2,7) -
Copolymerization-bis--N, one kind in N '-(4- butyl phenyls)-bis--N, N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB)；
3. according to a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate described in claim 1, it is special
Sign is, described organic solvent be dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, hexamethylene, pentane, hexane or
One kind in octane.
4. according to a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate described in claim 1, it is special
Sign is that described flexible substrates are polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polyethers
Ether ketone (PEEK), polyethylene (PE), polypropylene (PP), polystyrene (PS), polyethylene naphthalate (PEN) or polyamides
One kind in imines (PI).
5. according to a kind of multi-wavelength tunable organic semiconductor laser based on flexible substrate described in claim 1, it is special
Sign is that it is the high energy pulse laser that wavelength is less than or equal to 400nm to interfere the erosion Ultra-Violet Laser light source that burns.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105957964A (en) * | 2016-05-03 | 2016-09-21 | 南京邮电大学 | Flexible organic semiconductor laser and manufacturing method thereof |
| CN110137799B (en) * | 2019-05-29 | 2021-12-31 | 北京工业大学 | Composite cavity laser with adjustable laser emitting direction |
| CN110429470B (en) * | 2019-05-29 | 2021-07-30 | 北京工业大学 | Cavity coupling DFB laser with adjustable emergent laser polarization state |
| CN111682398B (en) * | 2020-06-11 | 2021-10-01 | 南京邮电大学 | Wavelength-tunable organic thin-film laser device based on photoresponse and application thereof |
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| US6410416B1 (en) * | 1999-05-28 | 2002-06-25 | Agere Systems Guardian Corp. | Article comprising a high-resolution pattern on a non-planar surface and method of making the same |
| CN101388523A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Novel organic semi-conductor solid laser and preparation thereof |
| CN102403651A (en) * | 2011-11-15 | 2012-04-04 | 南京大学 | Multi-wavelength distribution feedback type semiconductor laser device and manufacturing method thereof |
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| US6410416B1 (en) * | 1999-05-28 | 2002-06-25 | Agere Systems Guardian Corp. | Article comprising a high-resolution pattern on a non-planar surface and method of making the same |
| CN101388523A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Novel organic semi-conductor solid laser and preparation thereof |
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