CN102651537B - Manufacturing method for organic semiconductor laser based on active waveguide grating structure - Google Patents
Manufacturing method for organic semiconductor laser based on active waveguide grating structure Download PDFInfo
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- CN102651537B CN102651537B CN201110043450.5A CN201110043450A CN102651537B CN 102651537 B CN102651537 B CN 102651537B CN 201110043450 A CN201110043450 A CN 201110043450A CN 102651537 B CN102651537 B CN 102651537B
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Abstract
The invention discloses a manufacturing method for an organic semiconductor laser based on an active waveguide grating structure, which belongs to the technical field of nanometer photo-electronic materials and devices. The manufacturing method comprises the following steps of: (1) preparing an organic solution of a fluorescent emission organic semiconductor material; (2) coating the fluorescent emission organic semiconductor solution on a substrate in a spinning way to obtain a uniform organic semiconductor film of which the thickness is 50-500 nanometers; (3) spinning a recording medium onto the organic semiconductor film obtained in the step (2) to obtain a recording medium film of which the thickness is uniform and is 50-500 nanometers; and (4) reacting a laser interface pattern with the recording medium film to form a high-quality recording medium distribution feedback structure. The method has the advantages of no need of expensive equipment, low cost, high preparation efficiency, good laser mode, low threshold value and suitability for manufacturing electric pumped semiconductor lasers.
Description
Technical field
The invention belongs to the sub-material of nano photoelectric and device technology field, relate to successively organic semiconductor and recording medium solution are spin-coated on substrate, recycling laser interference photolithography technology is made nanometer grating on recording medium film, has realized a kind of technology of preparing of new organic semiconductor laser.
Background technology
As the prerequisite that realizes electric pump organic semiconductor laser, distributed feedback organic semiconductor laser has caused in the world to be paid close attention to widely.But existing distributed feedback organic semiconductor laser be all by active material as distributed feed-back chamber, need distributed feedback structure to be transferred on active material.Transfer process inevitably can be introduced defect in distributed feed-back chamber, and active material film is in uneven thickness, causes zlasing mode poor.Reduce the defect of active material film, improve distributed feedback organic semiconductor laser pattern and there is important application value.
Summary of the invention
The present invention seeks to propose successively organic semiconductor and recording medium solution to be spin-coated on substrate, recycling laser interference photolithography technology is made nanometer grating on recording medium film, realizes a kind of technology of preparing of the new distributed feedback organic semiconductor laser based on active waveguide.
In the present invention, organic semiconductor laser technology of preparing concrete scheme is as follows:
1) fluorescent emission organic semiconducting materials is dissolved in organic solvent, makes the solutions of organic semiconductors that concentration is 10-60mg/ml;
2) fluorescent emission solutions of organic semiconductors is spin-coated in substrate, spin speed is 500-4000rpm, during taking rotating speed as 1800rpm, as best, obtains the organic semiconductor thin-film of even thickness, and film thickness is 50-500nm.
3) recording medium is spin-coated on to step 2) on prepared organic semiconductor thin-film, spin speed is 500-4000rpm, is best during taking rotating speed as 2000rpm, obtains the recording medium film of even thickness, the thickness of film is 50-500nm;
4) by laser interference pattern and recording medium membrane action, form high-quality recording medium distributed feedback structure, laser interference photolithography technology is prepared the light path schematic diagram of recording medium distributed feedback structure and is seen Fig. 1.
Fluorescent emission organic semiconducting materials described above is: 9,9-dioctyl fluorene-2,7)-alternating copolymerization-(1,4-{2,1 ', 3}-diazosulfide) (F8BT), (9,9-dioctyl fluorene-2,7)-copolymerization-bis-(4-methoxyphenyl)-fluorenes (F8DP), (9,9-dioctyl fluorene-2,7)-copolymerization-bis--N, N '-(4-butyl phenyl)-bis--N, N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB) etc.; Described organic solvent is the one in dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or octane; Substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip etc.; Interfering the erosion Ultra-Violet Laser light source that burns is the high energy pulse laser that wavelength is less than or equal to 400nm.
Advantageous feature of the present invention:
1) the inventive method is without being used expensive equipment, and cost is low, and preparation efficiency is high, and zlasing mode is good, and threshold value is low.
2) structure of the present invention is suitable for making electric pump semiconductor laser.
Brief description of the drawings
Fig. 1, laser interference photolithography technology are prepared the light path schematic diagram of distributed feedback structure
Wherein, 1 is pulsed ultraviolet laser device; 2 for expanding by set of lenses; 3 is deielectric-coating total reflective mirror; 4 is beam splitter; 5 is sample to be processed
Atomic force microscope (AFM) photo of Fig. 2, the one dimension recording medium distributed feedback structure that obtains
Embodiment
Embodiment 1: the preparation (one-dimentional structure) of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor F8BT is dissolved in the organic solvents such as toluene, dimethylbenzene, chloroform, cyclohexane, pentane, hexane or octane, making concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
2) F8BT solutions of organic semiconductors is spin-coated in substrate of glass.Spin speed is 1800rpm, and corresponding thickness is 150nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 355nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure;
5) as shown in Figure 2, the cycle of prepared organic semiconductor grating is 350nm to the atomic force microscopy image of prepared one dimension distributed feedback organic semiconductor laser.
Embodiment 2: the preparation of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor F8BT is dissolved in the organic solvents such as toluene, dimethylbenzene, chloroform, cyclohexane, pentane, hexane or octane, making concentration is the F8BT solutions of organic semiconductors of 25mg/ml;
2) F8BT solutions of organic semiconductors is spin-coated in substrate of glass.Spin speed is 2000rpm, and corresponding thickness is 150nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 355nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure.
Embodiment 3: the preparation of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor PFB is dissolved in the organic solvents such as toluene, dimethylbenzene, chloroform, cyclohexane, pentane, hexane or octane, making concentration is the PFB solutions of organic semiconductors of 15mg/ml;
2) PFB solutions of organic semiconductors is spin-coated in substrate of glass.Spin speed is 1000rpm, and corresponding thickness is 200nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 355nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure.
Embodiment 4: the preparation of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor F8BT is dissolved in the organic solvents such as toluene, dimethylbenzene, chloroform, cyclohexane, pentane, hexane or octane, making concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
2) on F8BT solutions of organic semiconductors being spin-coated at the bottom of silicon wafer-based.Spin speed is 2000rpm, and corresponding thickness is 150nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 355nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure.
Embodiment 5: the preparation of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor F8BT is dissolved in the organic solvents such as toluene, dimethylbenzene or chloroform, making concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
2) F8BT solutions of organic semiconductors is spin-coated in substrate of glass.Spin speed is 1000rpm, and corresponding thickness is 200nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 355nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure.
Embodiment 6: the preparation of the one dimension organic semiconductor laser based on active waveguide
1) organic semiconductor F8BT is dissolved in the organic solvents such as toluene, dimethylbenzene, chloroform, cyclohexane, pentane, hexane or octane, making concentration is the F8BT solutions of organic semiconductors of 15mg/ml;
2) F8BT solutions of organic semiconductors is spin-coated in substrate of glass.Spin speed is 2000rpm, and corresponding thickness is 150nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) in organic semiconductor thin-film on.Spin speed is 2000rpm, and corresponding thickness is 500nm;
4) the duplicature sample of above-mentioned preparation is placed in to optical interference circuit, as shown in Figure 1, wherein, interference lithography optical maser wavelength used is 405nm, can on the photoresist film of upper strata, record interference fringe, then photoresist sample is developed, photographic fixing, can obtain periodic one dimension distributed feedback structure.
Claims (3)
1. the manufacture method of the organic semiconductor laser based on active waveguide optical grating construction, is characterized in that, comprises the following steps:
1) fluorescent emission organic semiconducting materials is dissolved in organic solvent, makes the solutions of organic semiconductors that concentration is 10-60mg/ml;
2) fluorescent emission solutions of organic semiconductors is spin-coated in substrate, spin speed is 500-4000rpm, and rotating speed is 1800rpm, obtains the organic semiconductor thin-film of even thickness, and film thickness is 50-500nm;
3) recording medium S1805 photoresist is spin-coated on to step 2) on prepared organic semiconductor thin-film, spin speed is 500-4000rpm, rotating speed is 2000rpm, obtains the recording medium film of even thickness, the thickness of film is 50-500nm;
4), by laser interference pattern and recording medium membrane action, form high-quality recording medium distributed feedback structure;
Described fluorescent emission organic semiconducting materials is: 9,9-dioctyl fluorene-2,7)-alternating copolymerization-(1,4-{2,1 ', 3}-diazosulfide) (F8BT), (9,9-dioctyl fluorene-2,7)-copolymerization-bis-(4-methoxyphenyl)-fluorenes (F8DP), (9,9-dioctyl fluorene-2,7)-copolymerization-bis--N, N '-(4-butyl phenyl)-bis--N, N '-phenyl-Isosorbide-5-Nitrae-phenylenediamine (PFB); Interfering the erosion Ultra-Violet Laser light source that burns is the high energy pulse laser that wavelength is less than or equal to 400nm.
2. according to the method for claim 1, it is characterized in that, described organic solvent is the one in dimethylbenzene, toluene, chlorobenzene, dichloro-benzenes, benzene, chloroform, cyclohexane, pentane, hexane or octane.
3. according to the method for claim 1, it is characterized in that, substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip.
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| CN103197366B (en) * | 2013-03-13 | 2015-06-17 | 北京工业大学 | Polarizing filter based on heterojunction grating and preparation method |
| CN103236647A (en) * | 2013-04-17 | 2013-08-07 | 北京工业大学 | Manufacturing method of distributed Bragg reflection lens structure |
| CN105226500B (en) * | 2015-05-08 | 2018-03-30 | 北京工业大学 | Flexible tunable multi-wavelength organic semiconductor laser and preparation method |
| CN104882780B (en) * | 2015-06-10 | 2017-10-13 | 北京工业大学 | A kind of preparation method of film-type organic polymer laser |
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| CN101388523A (en) * | 2008-10-30 | 2009-03-18 | 上海大学 | Novel organic semi-conductor solid laser and preparation thereof |
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| US6665479B2 (en) * | 2000-03-06 | 2003-12-16 | Shayda Technologies, Inc. | Polymeric devices including optical waveguide laser and optical amplifier |
| JP2001257399A (en) * | 2000-03-09 | 2001-09-21 | Taiyo Yuden Co Ltd | Thin-film laser light emitting element and producing method therefor |
| JP4415113B2 (en) * | 2003-10-01 | 2010-02-17 | 独立行政法人理化学研究所 | Organic distributed feedback laser with variable oscillation wavelength |
| JP2010015874A (en) * | 2008-07-04 | 2010-01-21 | Kyoto Institute Of Technology | Organic optical device, method of manufacturing the same, and method of manufacturing amplified or narrowed light |
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Non-Patent Citations (4)
| Title |
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| polymer grating based on photopolymerization for low-order distributed feedback polymer lasers;zhao xuanke,et al;《CHINESE OPTICS LETTERS》;20080210;第6卷(第2期);90-92 * |
| zhao xuanke,et al.polymer grating based on photopolymerization for low-order distributed feedback polymer lasers.《CHINESE OPTICS LETTERS》.2008,第6卷(第2期),90-92. |
| 周进波.用于有机半导体激光器的新型聚合物光栅.《清华大学硕士学位论文》.2004,全文. |
| 用于有机半导体激光器的新型聚合物光栅;周进波;《清华大学硕士学位论文》;20041231;全文 * |
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