JP2010015874A - Organic optical device, method of manufacturing the same, and method of manufacturing amplified or narrowed light - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic optical device that emits light upon application of low-energy light from a general mercury lamp or the like and that amplifies and narrows the light emitted, to provide a method of manufacturing the same, and to provide a method of using low-energy light from a general mercury lamp or the like to cause emission of light, amplifying the light emitted, and supplying it as narrowed light. <P>SOLUTION: The organic optical device includes: (A) a planar crystal 11 of an organic semiconductor material; and (B) a diffraction grating 12, with (B) the diffraction grating 12 provided on at least one principal plane of (A) the planar crystal 11 of the organic semiconductor material. (B) Preferably, the diffraction grating 12 is formed on the surface of a dielectric material 13. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to (A) a plate-like crystal of an organic semiconductor material, and (B) an organic optical device having a diffraction grating, a manufacturing method thereof, and a method of emitting amplified or narrowed light.

In recent years, organic electronic materials and organic optical materials using organic semiconductor materials have attracted attention, and various organic optical devices have been developed and used in various fields (for example, see Non-Patent Document 1). Especially, the organic semiconductor material is used for the thin-screen television as an organic EL material, for example, The development is attracting attention.
The organic EL material has a property of emitting light when incident, but even if it can be emitted using low energy light such as a mercury lamp, the obtained emission intensity is weak, so Neither amplification nor narrowing of the emission line width is observed. In order to amplify the light emission of these organic EL materials and cause the light emission line width to be narrowed, the light irradiated for light emission usually requires a high-energy laser beam.
Michael D. McGehee and Alan J. Heeger, Advanced Materials, 2000, 12, No. 22, November 16, P.1655-1668

  An object of the present invention is to provide an organic optical device that emits light by irradiating low-energy light such as a general mercury lamp, amplifies the emitted light, and a method for manufacturing the same. . It is another object of the present invention to provide a method of emitting light using low energy light such as a general mercury lamp, amplifying the light emission, and supplying the light as narrowed light.

As a result of intensive studies, the inventors have surprisingly found that
(A) It has been found that the above problem can be solved by attaching (B) a diffraction grating to at least one of the main planes of the flat crystal of the organic semiconductor material, and the present invention has been completed. Is. Here, the main plane means a pair of wide crystal planes of a flat crystal of an organic semiconductor material.
That is, the present invention in one aspect,
(A) An organic optical device comprising a flat crystal of an organic semiconductor material and (B) a diffraction grating,
(B) A diffraction grating provides an organic optical device provided on at least one main plane of a plate-like crystal of (A) an organic semiconductor material.
The organic optical device according to the present invention can be preferably used for optical amplification or optical narrow line width.
In one aspect of the present invention, there is provided an organic optical device in which (B) a diffraction grating is formed on a surface of a dielectric material.

In another aspect, the present invention provides:
(1) (A) preparing a flat crystal of an organic semiconductor material,
(2) (B) a step of forming a diffraction grating on the surface of the dielectric, and (3) (A) a step of arranging an organic semiconductor flat crystal on the (B) diffraction grating of the dielectric surface. An organic optical device manufacturing method is provided.

In a preferred aspect of the present invention,
(I) (A) preparing a flat crystal of an organic semiconductor material;
(Ii) (A) a step of providing a diffraction grating on at least one main plane of the flat crystal of the organic semiconductor material; and (iii) (A) irradiating the flat crystal of the organic semiconductor material with light. (A) Fluorescence is generated in the organic semiconductor flat crystal, and (B) the flat crystal region of the organic semiconductor material provided with the diffraction grating is in a direction not perpendicular to the diffraction grating wave vector of the diffraction grating. In addition, a method of emitting amplified or narrowed (or narrowed line) light including a process through which the fluorescence passes is provided.

The organic optical device according to the present invention is
(A) a flat crystal of an organic semiconductor material, and (B) a diffraction grating,
(B) Since the diffraction grating is provided on at least one main plane of the plate-like crystal of the organic semiconductor material (A), it emits light by irradiating it with low-energy light such as a general mercury lamp. The emitted light can be amplified and narrowed.
(B) When the diffraction grating is formed on the surface of the dielectric material, there is an advantage that the light emission characteristics of the organic semiconductor material are not impaired.

BEST MODE FOR CARRYING OUT THE INVENTION

The organic optical device according to the present invention is
(A) It comprises a flat crystal of an organic semiconductor material and (B) a diffraction grating, and (B) the diffraction grating is provided on at least one main plane of the (A) flat crystal of the organic semiconductor material. Yes.
In the present invention, the “organic semiconductor material” is generally referred to as an organic semiconductor material, and is not particularly limited as long as it is a material from which the organic optical device intended by the present invention can be obtained. As such an organic semiconductor material, for example, a compound represented by the formula (I):
Formula _{(I) :( X) m -} (Y) n
[here,
X may each independently have a heteroatom such as nitrogen, sulfur, oxygen, selenium and tellurium, and an alkyl group (for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, Heptyl group, octyl group, etc.), halogen, alkoxyl group (eg, methoxy group, ethoxy group, etc.), alkenyl group (eg, ethenyl group, etc.), cyano group, fluorinated alkyl group (eg, trifluoromethyl group, etc.), etc. And a benzene ring, a pyridine ring, a pyrimidine ring, a pyridazine ring, a p-pyridylvinylene, a pyran, a thiopyran ring, and the like, and a benzene ring is more preferable.
m is preferably from 0 to 20, and more preferably from 1 to 8.
Y may each independently have a heteroatom such as nitrogen, sulfur, oxygen, selenium and tellurium, and an alkyl group (for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, Heptyl group, octyl group, etc.), halogen, alkoxyl group (eg, methoxy group, ethoxy group, etc.), alkenyl group (eg, ethenyl group, etc.), cyano group, fluorinated alkyl group (eg, trifluoromethyl group, etc.), etc. And a thiophene ring, a furan ring, a pyrrole ring, and a selenophene ring, and a thiophene ring is more preferable.
n is preferably from 0 to 20, and more preferably from 1 to 8.
X and Y may be combined in a block, randomly, or alternately. X and Y may be bonded by a single bond, a double bond, or a triple bond.
Xs may be condensed.
X and Y are preferably bonded by a single bond, and X and Y are preferably bonded alternately. ]
Can be illustrated.

In the compounds described in formula (I), the compound shown in formula (II):
Formula (II): (X) _m
[Formula (II) is a compound of formula (I) where n = 0, X and m are as described in formula (I), and Xs are condensed or bonded by a single bond. Compound] is preferred.
X is more preferably a benzene ring.
More specifically, as such compounds, tetracene (reference: chemical 1), pentacene (reference: chemical 2), quater-phenyl (reference: chemical 3), kinque-phenyl (reference: chemical 4), sexi- An example is phenyl (see: Chemical formula 5).

In the compounds described in formula (I), compounds of formula (III):
Formula (III): (Y) _n
[Formula (III) is a compound of formula (I) in which m = 0, Y and n are as described in formula (I), and Y is a compound in which a single bond is bonded].
Y is a thiophene ring, and a compound in which the thiophene rings are bonded at the 2-position and 5-position is more preferable.
More specific examples of such compounds include quater-thiophene (Reference: Chemical Formula 6), sexual-thiophene (Reference: Chemical Formula 7), and octi-thiophene (Reference: Chemical Formula 8).

In the compounds described in formula (I), a compound represented by formula (IV):
Formula (IV): (X) _m1- (Y) _n- (X) _m2
[Formula (IV) is a compound in which (Y) n is present as a block at the center of the molecule in Formula (I), and a block of (X) _{m1 and} a block of (X) _m2 can exist on both sides thereof. M1 + m2 in the formula (IV) is m in the formula (I), X, Y, and n are as described in the formula (I), and a compound in which X and Y are bonded by a single bond] is preferable.
Y is a thiophene ring, the thiophene ring is bonded to X at the 2-position and 5-position, X is a benzene ring which may have a substituent, m1 and m2 are 0 to 2, and n = The compound which is 1-5 is more preferable.
When n = 1 to 3, it is even more preferable that m1 or m2 = 2, and it is more preferable that m1 = m2 = 2. When n = 4 or more, it is even more preferable that m1 or m2 = 1, and it is more preferable that m1 = m2 = 1. It is particularly preferred that n = 1-5.

  As such a compound, more specifically, when n = 1, BP1T (Reference: Chemical formula 9), BP1T-Bu (Reference: Chemical formula 10), BPT1-OME (Reference: Chemical formula 11), BP1T-CN ( Reference: Chemical formula 12) can be exemplified.

  As such a compound, more specifically, when n = 2, BC4 (Reference: Chemical formula 13), BP2T (Reference: Chemical formula 14), BP2T-He (Reference: Chemical formula 15), BT2T-OME (Reference: 16) and BP2T-CN (see: Chemical formula 17).

  More specifically, as such a compound, when n = 3, BP3T (Reference: Chemical formula 18) can be exemplified.

More specifically, as such a compound, when n = 4, BP4T (Reference: Chemical Formula 19) and P4T-CF ₃ (Reference: Chemical Formula 20) can be exemplified.

  As such a compound, more specifically, when n = 5, P5T (Reference: Chemical Formula 21) can be exemplified.

In the compounds described in the formula (I), a compound represented by the formula (V):
Formula (V): (X) _m1- (Y) _n1- (X) _m2- (Y) _n2- (X) _m3
[Formula (V) is a compound of formula (I) where n = 2 (ie, n1 = n2 = 1) and formula (I) where m = m1 + m2 + m3, where m2 = 1, and X and Y are In the formula (I), X and Y are bonded by a single bond].
Y is a thiophene ring, the thiophene ring is bonded to X at the 2-position and 5-position, X is each independently a benzene ring which may have a substituent, and m1 and m3 are 1 or 2 Is more preferable, and 1 is particularly preferable.

More specific examples of such a compound include AC5 (Reference: Chemical Formula 22) and AC5-CF ₃ (Reference: Chemical Formula 23).

  The “(A) flat crystal of an organic semiconductor material” according to the present invention refers to a plate-like crystal of an organic semiconductor material as described above, and is preferably a single crystal. When the plate is thin, it is also called a slab crystal. The thickness of the plate crystal is not particularly limited as long as the target organic optical device can be obtained, but is preferably 0.001 to 1000 μm, more preferably 0.01 to 100 μm. Preferably, it is 0.1-10 micrometers especially preferable. The size (or area) of the tabular crystal is preferably larger than the area of the region occupied by (B) the diffraction grating.

  The method for producing the flat crystal of the organic semiconductor material according to the present invention is not limited as long as the target flat crystal can be obtained. Examples of such methods include methods such as a sublimation recrystallization method and a liquid phase recrystallization method.

The “(B) diffraction grating” according to the present invention is generally called a diffraction grating, and is not particularly limited as long as the organic optical device intended by the present invention can be obtained. . The length of the diffraction grating, the period of the diffraction grating, the number of diffraction gratings, the depth and width of the grooves of the diffraction grating are also particularly limited as long as the organic optical device intended by the present invention can be obtained. It can be appropriately selected depending on the organic semiconductor material to be used, the wavelength and intensity of the irradiated light, the diameter of the irradiated light, the degree of amplification of light emission, the degree of narrow line width of light emission, and the like. In general,
The length of the diffraction grating is preferably 0.1 to 100,000 μm, more preferably 1 to 10000 μm, and particularly preferably 10 to 1000 μm.
The period of the diffraction grating is preferably 0.01 to 100 μm, more preferably 0.03 to 30 μm, and particularly preferably 1.0 to 10 μm.
The number of diffraction gratings is preferably 3 to 1,000,000, more preferably 10 to 100,000, and particularly preferably 30 to 10,000.
The depth of the grooves of the diffraction grating is preferably 0.001 to 1000 μm, more preferably 0.003 to 30 μm, and particularly preferably 0.01 to 1 μm.
The groove width of the diffraction grating is preferably 0.0001 to 100 μm, more preferably 0.001 to 10 μm, and particularly preferably 0.01 to 1 μm.

In general, the (B) diffraction grating according to the present invention is preferably formed on a plane of a dielectric material.
Here, the dielectric material is generally called a dielectric, and is not particularly limited as long as the organic optical device intended by the present invention can be obtained. The dielectric material is transparent to the light used, and the refractive index of the dielectric material is preferably smaller than the refractive index of the organic semiconductor material, and the difference in refractive index is 0.01 to 10. More preferably, it is 1-10.
Examples of such a dielectric material include quartz, soda glass, polymethyl methacrylate, polystyrene, polyethylene terephthalate, indium-tin oxide, silicon and the like, but quartz, soda glass, indium-tin oxide A thing etc. are preferable.

The method of forming the diffraction grating (B) in the plane of the dielectric material is particularly limited as long as the organic optical device intended by the present invention can be obtained and the above-mentioned desired diffraction grating can be obtained. It is not a thing. As such a method, for example, a method of physically digging a groove, a method of etching using a chemical or the like can be exemplified.
For example, when the dielectric material is a quartz substrate, a method of physically digging a groove is preferable.

The organic optical device according to the present invention can be obtained by providing the diffraction grating (B) thus obtained on the main plane of the flat crystal of the organic semiconductor material (A) described above.
The method for providing the (B) diffraction grating on the main surface of the plate-like crystal of the (A) organic semiconductor material is not particularly limited as long as the organic optical device intended by the present invention can be obtained. As such a method, for example, (B) a method of arranging a flat crystal of an organic semiconductor material (A) on a plane of a dielectric material on which a diffraction grating is formed can be exemplified. In general, (B) a plate-like crystal of an organic semiconductor material is brought into physical contact with and in close contact with a plane of a dielectric material on which a diffraction grating is formed. An adhesive or the like may be used. (B) The method of disposing the flat crystal of the organic semiconductor material (A) on the plane of the organic semiconductor material on which the diffraction grating is formed is as follows. Since it is supported as a whole, it is preferable.

The organic optical device obtained as described above was irradiated with energy light such as a mercury lamp as excitation light, and the emitted fluorescence spectrum was measured. The line width of became narrower. It is a very unusual phenomenon that such a phenomenon was recognized by low-energy excitation light such as a mercury lamp.
Therefore, the organic optical device according to the present invention is used for a method of emitting light using low energy light such as a general mercury lamp as described later, amplifying the light emission, and supplying the light as narrowed light. can do. In this case, in the method of emitting light, which will be described later, the steps (i) and (ii) can be combined to prepare the organic optical device according to the present invention. The step of preparing the organic optical device according to the present invention may be used by manufacturing the organic optical device according to the present invention on the basis of the manufacturing method described above, if necessary. Organic optical devices may be used.

In the method of emitting amplified or narrowed light according to the present invention,
(I) (A) preparing a flat crystal of an organic semiconductor material;
(Ii) (A) a step of providing a diffraction grating on at least one main plane of the flat crystal of the organic semiconductor material; and (iii) (A) irradiating the flat crystal of the organic semiconductor material with light. (A) The fluorescent light is generated in the organic semiconductor flat crystal, and the fluorescent wave vector is selected so that the fluorescent wave vector is not orthogonal to the diffraction grating wave vector, and (B) the diffraction grating is provided. A step of passing the fluorescence of the flat crystal region in a direction not parallel to the grating of the diffraction grating.

That is, the method of emitting amplified or narrowed light according to the present invention includes the step (iii) in addition to the steps (i) and (ii).
In the step (iii), (A) the flat crystal of the organic semiconductor material is irradiated with excitation light to generate fluorescence in the flat crystal, but the wave number vector of the fluorescence generated from the organic optical device to be used. It is necessary to select a direction which is not orthogonal to the diffraction grating wave vector of the diffraction grating. Here, the diffraction grating wave vector is defined as a direction perpendicular to the groove of the diffraction grating. The fluorescence goes straight from the place where the excitation light is irradiated, and the straight direction coincides with the direction of the wave number vector of the fluorescence. Therefore, the place where the excitation light is irradiated is (A) the fluorescence generated by irradiating the plate-like crystal of the organic semiconductor material with the wave number vector of the fluorescence not orthogonal to the diffraction grating wave vector, and (B) (A) The region of the plate-like crystal of the organic semiconductor material provided with the diffraction grating is determined by the condition that the fluorescence passes.
Of these, the most preferable condition is when the direction of the wavenumber vector of fluorescence is parallel to the direction of the diffraction grating wavenumber vector of the diffraction grating.
As long as the arrangement is as described above, the location where the excitation light is irradiated may be on the diffraction grating. However, optical loss due to the influence of scattering or the like may occur on the diffraction grating. It is preferably on the crystal.

The irradiation position of the excitation light can be adjusted appropriately from the distance from the diffraction grating, but it is preferable to irradiate the diffraction grating at a position of 0.01 to 10000 μm, and to irradiate the position of 0.1 to 1000 μm. More preferred.
The excitation light is not particularly limited as long as it is normally used as excitation light. However, in the present invention, even low-energy light such as a mercury lamp and a xenon lamp is used. be able to.
The direction of polarization of the flat crystal of the organic semiconductor material placed on the organic optical device is 0 degree normal to the main surface of the flat crystal of the organic semiconductor material and 90 degrees parallel to the main surface. , Polarized light in a direction close to 0 degrees. Therefore, the organic optical device according to the present invention is useful for generating fluorescence having a polarization direction close to 0 degrees. Further, when the method according to the present invention is used, light having strong polarization in a direction close to 0 degrees can be emitted.

  In the organic optical device and the method of emitting amplified or narrowed light according to the present invention, the wavelength of fluorescence to be amplified or narrowed is changed with respect to excitation light by appropriately changing the grating interval of the diffraction grating to be used. be able to.

The organic optical device according to the present invention can be used in various fields. For example, the information device field, the display field, the biological light measurement field, and the like can be exemplified.
Further, the method of emitting amplified or narrowed light according to the present invention can be used in various fields, and examples thereof include the information device field, the display field, and the biological light measurement field.

  Hereinafter, the present invention will be described more specifically with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments without departing from the gist thereof.

FIG. 1 is a schematic view showing one embodiment of an organic optical device according to the present invention.
The organic optical device 1 includes an organic semiconductor crystal 11 including an organic light emitting waveguide layer 10 and a quartz glass layer 13 having a rectangular diffraction grating 12 formed on a part of the surface. By being disposed on the quartz glass layer 13, it is physically bonded and brought into contact. The organic optical device shown in FIG. 1 was manufactured as follows.

Embodiment 1: Production of organic optical device and evaluation of light emission performance
Formation of diffraction grating on quartz substrate A commercially available quartz glass substrate (about 1 cm × 1 cm) was washed with an organic solvent or a detergent (acetone, neutral detergent, 2-propanol in this order) and acid (96% After washing with 4: 1 of sulfuric acid and 31% hydrogen peroxide, the surface was cleaned by rinsing with distilled water. Next, using a vacuum vapor deposition apparatus (internal pressure: 4.0 × 10 ⁻³ Pa or less), aluminum is heated and vaporized with a tungsten heating wire, and the surface of the cleaned quartz glass substrate is about 15 nm. The thickness of aluminum was evaporated. This is to prevent charging of the quartz glass substrate when forming a diffraction grating by digging quartz glass by irradiating gallium ions using a focused ion beam apparatus (hereinafter referred to as FIB apparatus) to be described later. This is to prevent the inability to excavate.

The quartz glass substrate on which aluminum was vapor-deposited was fixed on the sample table of the FIB apparatus with carbon tape, and the quartz glass substrate on the sample table was inserted into the processing chamber in the FIB apparatus without disturbing the vacuum of the FIB apparatus.
While the processing chamber of the FIB apparatus was kept in vacuum (8 × 10 ⁻⁴ Pa or less), a gallium ion beam (hereinafter also referred to as “beam”) having a beam diameter set to 20 nm was emitted. After observing at 50 times and determining the excavation place on the quartz substrate, excavation was performed under the following excavation conditions.
As conditions for excavating one groove with the FIB apparatus, the processing mode is set to the rectangular mode, the excavation length L is set to 40 μm, the excavation width W is set to 400 nm, and the dose is set to 1.0 nC / cm ² . A rectangular groove having an excavation length L of 40 μm was excavated on a quartz glass substrate. When the quartz substrate was excavated, the aluminum deposited on the quartz substrate was also excavated together.
Under the same excavation conditions, grooves of the same shape were excavated in parallel at regular intervals. If the interval between the digging start position of one groove and the digging start position of the next groove is the period Λ of the diffraction grating, the value is set to 10 pixels on the processing screen, and a total of 40 grooves are continuously drilled. A diffraction grating was formed on a quartz substrate. After excavation by the FIB apparatus, the aluminum remaining on the quartz glass substrate was removed by immersion in hydrochloric acid. FIG. 2 shows a schematic diagram of the diffraction grating 12 obtained as described above.

FIG. 3 shows a three-dimensional image of a portion of a diffraction grating on a quartz glass substrate, as observed with an atomic force microscope (AFM). FIG. 4 shows a cross-sectional view in the direction perpendicular to the grating direction of the diffraction grating shown in the AFM image.
From the observation with an atomic force microscope, the length L in the grating direction of the obtained diffraction grating is 40 μm, the period Λ of the adjacent groove is 1317 nm, the groove width W is 370 nm, and the groove depth D is 88 nm. It was confirmed that a rectangular diffraction grating having a length of 52 μm in the direction perpendicular to the grating direction of the diffraction grating was formed on the quartz glass substrate.

Organic semiconductor crystal used as the prepared organic light emitting waveguide of the tabular crystals by sublimation recrystallization of the organic semiconductor material was prepared by the sublimation recrystallization method. FIG. 5 schematically shows a sublimation recrystallization apparatus for organic semiconductor materials. FIG. 5 a schematically shows an overall outline of the sublimation recrystallization apparatus 20. The sublimation recrystallization apparatus 20 includes a test tube 21 for sublimating and recrystallizing an organic semiconductor material therein, a nitrogen cylinder 31 for introducing nitrogen into the test tube 21 to prevent deterioration of the organic semiconductor material, a flow meter 32, and a test tube 21. A cold trap 34 for trapping a gas of an organic semiconductor material that has not been recrystallized therein and a bubbler 35 containing liquid paraffin are included.
FIG. 5b schematically shows the test tube 21 for sublimation recrystallization of the organic semiconductor material in more detail. The test tube 21 (outer diameter 25 mm) was fixed to a stainless steel fitting (not shown) with two sets of stainless steel rings and a rubber ring for sealing, and the inside thereof was kept highly airtight. A glass ring 23 having an outer diameter of 22 mm was placed in the test tube 21 in consideration of facilitating the removal of crystals. A total of four glass rings 23a to 23d having lengths of 20 mm, 30 mm, 30 mm, and 20 mm were inserted from the back of the test tube.
A powdery organic semiconductor material 24 placed on an aluminum foil (not shown) was placed on the innermost glass ring 23a. BP1T (2,5-Bis (4-biphenylyl) thiophene) was selected as the organic semiconductor material. Nitrogen gas (inert gas), the flow rate of which was adjusted by the flow meter 32, was caused to flow to the innermost part of the test tube 21 through a glass tube 25 having an outer diameter of 4 mm fixed to a stainless steel fitting with a rubber ring. This nitrogen gas also acts as a carrier gas 26 for the organic semiconductor material sublimated by heating.

In order to sublimate and recrystallize the powdered organic semiconductor material 24, two heaters, a source heater 27 and a growth heater 28, were used. The source heater 27 was wound around the test tube 21 so as to cover a part of the glass rings 23 a and 23 b at the deepest part of the test tube 21. The growth heater 28 was wound around the test tube 21 so as to cover a part of the glass ring 23b and 23c. Accordingly, the region of the test tube 21 around which the source heater 27 is wound is also referred to as a source region, and the region of the test tube 21 around which the growth heater is wound is also referred to as a growth region. The organic semiconductor material 24 heated and sublimated in the source region is crystallized in the growth region to produce an organic semiconductor material crystal 29. When the set temperatures of the source heater and the growth heater were T1 and T2, respectively, T1 was set to 310 ° C. and T2 was set to 270 ° C., and crystals were grown for 15 hours.
The nitrogen gas 26 and the organic semiconductor material gas that has not been crystallized exit from the test tube 21, the organic semiconductor material gas is removed by the cold trap 34, and the nitrogen gas passes through the bubbler 35 to the atmosphere. It is exhausted inside.

Production of Organic Optical Device by Bonding Flat Crystal of Organic Semiconductor Material and Quartz Glass Substrate One suitable flat crystal 11 was selected from the many organic semiconductor crystals 29 produced by the above-described sublimation recrystallization method. By arranging the organic semiconductor material flat crystal 11 on the quartz glass substrate 13 so as not to bend the crystal 11 of the organic semiconductor material so as to cover the diffraction grating 12 of the quartz glass substrate 13. Contact. As a result, the flat crystal 11 of the organic semiconductor material was adhered to and adhered to the quartz glass substrate, and the organic optical device 1 was manufactured.
FIG. 6 shows a photomicrograph of an example of an organic optical device manufactured in this way. The magnification is 50 times for the objective lens and 10 times for the eyepiece. The photograph in FIG. 6 was taken from a direction perpendicular to the plane of the flat crystal 11 of the organic optical material 1. A rectangular region visible in the lower left of the photograph is a region of the diffraction grating 12 formed on the quartz glass substrate 13 and is seen through the flat crystal 11.

Luminescence measurement of organic optical device FIG. 7 schematically shows a luminescence measurement apparatus 40 using a fluorescence microscope. A quartz substrate 13 (that is, the organic optical device 1) on which a diffraction grating 12 was formed, to which a flat crystal 11 of an organic semiconductor crystal material was attached, was placed on a sample stage (not shown) of a fluorescence microscope.
A mercury lamp 42 was provided as a light source in a fluorescence microscope 41 (Eclipse LV100POL type manufactured by Nikon). Ultraviolet light (wavelength 330 to 380 nm) was extracted from the light from the mercury lamp through the field stop 43 and the filter 44. The extracted ultraviolet light is reflected by the mirror 45, passes through the objective lens of the fluorescence microscope 41, and is irradiated from a direction perpendicular to the plane (planar crystal plane) of the organic optical device 1 as shown in FIG. . At this time, the irradiation area of the ultraviolet light extracted from the mercury lamp was limited by a diaphragm installed in the microscope, and the organic optical device 1 was irradiated through a 50 × objective lens. This is because the ultraviolet light is irradiated only to a specific region of the organic optical device 1 (for example, a region having the same area as the region of the diffraction grating formed on the quartz glass substrate). Since the diaphragm installed in the microscope has a hexagonal shape, the ultraviolet irradiation region has a hexagonal shape.

  The light is emitted from the end face of the plate crystal in the direction parallel to the crystal plane of the plate crystal 11 of the organic optical device 1 and in the direction parallel to the diffraction grating wave vector of the diffraction grating 12 around the diffraction grating region. The emitted light 46 passed through a sharp cut filter 47 (420 nm), further guided to an optical fiber 48, and observed with a detector 49 (46 photonic multichannel analyzer: hereinafter also referred to as “PMA”). A sharp cut filter 47 is installed between the organic optical device 1 and the detector 49, and the ultraviolet light extracted from the mercury lamp 42 is scattered by the flat crystal 11 and enters the detector 49 to disturb the measurement. Prevented that. The detector 49 is at a position where the intensity of the light 46 emerging from the end face of the plate crystal 11 can be detected most strongly when the irradiation position of the mercury lamp 42 on the organic optical device 1 and the position of the organic optical device 1 are fixed. installed.

  The organic optical device 1 including the diffraction grating 12 having the average diffraction grating period Λ of 1317 nm described above was irradiated with ultraviolet light from the mercury lamp 42, and the emission emitted from the end face of the crystal was observed. . 1-6 of FIG. 8 shows the fluorescence micrograph at the time of irradiating the above-mentioned ultraviolet-ray to the organic optical device 1. FIG. In 1 of FIG. 8, the ultraviolet light is irradiated to the hexagonal shape seen in the center. As described above, since the irradiation area of the ultraviolet light is narrowed by the hexagonal shaped diaphragm of the microscope 41, the irradiation area of the ultraviolet light has a hexagonal shape. To the right of this hexagonal region, a rectangular diffraction grating 12 (enclosed by a dotted line) can be seen. FIG. 9 shows an enlarged fluorescence micrograph of the diffraction grating 12. The sharp cut filter 47, the detector 49, and the like are arranged on the left side of the photograph 1 in FIG. 8, that is, on the opposite side of the diffraction grating 12 with respect to the hexagonal ultraviolet light irradiation region. The detector 49 was installed at a position parallel to the diffraction grating vector of the diffraction grating and parallel to the plane of the flat crystal 11 of the organic optical device 1. Therefore, in 1 of FIG. 8, only the light emitted through the crystal 11 of the organic semiconductor material to which the diffraction grating 12 is not attached is detected by the detector 49.

The measurement of the light emission of the organic optical material 1 is performed by measuring the irradiation position of the ultraviolet light from the mercury lamp 42 on the organic optical device 1 on the straight line connecting the detector and the center of the diffraction grating and closer to the detector in front of the diffraction grating. Then, it was carried out while moving through the region of the diffraction grating to a position opposite to the detector across the diffraction grating (1 to 6 in FIG. 8).
That is, from 1 in FIG. 8 to 6 in FIG. 8, the organic optical device 1 was gradually moved from right to left toward the screen of the photograph, and the light emission of the organic optical device 1 was measured by the detector 49. . 8, the left half of the diffraction grating 12 is irradiated with ultraviolet light. In FIG. 8, the entire surface of the diffraction grating 12 is irradiated with ultraviolet light. In FIG. 8 is irradiated with ultraviolet light, and in FIG. 8 5, the diffraction grating 12 is no longer irradiated with ultraviolet light, and in FIG. 8, the diffraction grating 12 and the ultraviolet light irradiation region are further irradiated. The interval is widening.
During this measurement, measurement conditions such as other detectors and excitation light intensity are constant except for the irradiation position of the ultraviolet light on the diffraction grating 12 of the organic optical device 1.
In addition, since the direction of the grating of the diffraction grating 12 is parallel to the screens 1 to 6 in FIG. 8 and the vertical direction (see also FIG. 9), the measurement proceeds from 2 in FIG. 8 to 5 in FIG. The light emitted from the organic optical device 1 passes through the crystal region 10 attached to the diffraction grating 12 for a longer time.

The measurement result of the observed luminescence is shown in FIG. 1 to 6 in FIG. 10 show fluorescence spectra observed when ultraviolet rays are irradiated at positions 1 to 6 in FIG. In FIGS. 1 to 6, since the spectrum is displayed while being shifted little by little, the peak position is not shifted as much as displayed in FIG. 10.
When ultraviolet light was irradiated to the position 1 in FIG. 8 (the side closest to the detector when viewed from the diffraction grating), a broad spectrum over a wide wavelength range was observed, as indicated by 1 in FIG. When ultraviolet light was irradiated to the position 2 in FIG. 8, new peaks were observed in the vicinity of 462 nm, 468 nm, and 517 nm, as indicated by 2 in FIG. When light was irradiated at the position 3 in FIG. 8 (directly above the diffraction grating), sharp peaks with a sharp increase in intensity were observed at 463 nm, 468 nm, and 519 nm, as indicated by 3 in FIG. When ultraviolet light was irradiated to the position 4 in FIG. 8, the intensity of the sharp peak that appeared when the position 3 in FIG. 8 was irradiated was further significantly increased, as indicated by 4 in FIG. When ultraviolet light was irradiated to the positions 5 in FIG. 8 and 6 in FIG. 8, the intensity of the sharp peak described above was further remarkably increased as shown in 5 and 6 in FIG. The observed change in peak wavelength is shown in Table 1.

  As described above, the organic optical device of the present invention has a light emission peak that is narrower (that is, the wavelength width of the emission spectrum is significantly narrower) than the broad peak of fluorescence emitted from the conventional organic semiconductor crystal thin film. I was able to observe. Further, by moving the light irradiation position from 4 in FIG. 8 to 6 in FIG. 8, remarkable light amplification (that is, increase in emission spectrum intensity) was observed as shown in FIG.

Second Embodiment: Evaluation of Polarization Direction of Light Emission of Organic Optical Device The irradiation position of the ultraviolet rays from the mercury lamp 42 to the organic optical device 1, the arrangement of the diffraction grating 12 and the detector 49 are shown in FIG. 6 was set in the same manner as the irradiation position and arrangement. The light emission 46 radiated from the end face of the flat crystal 11 between the diffraction grating 12 attached to the flat crystal 11 of the organic optical device 1 and the detector 49 to the detector 49 is changed to the end face of the flat crystal 11. A polarizing plate (not shown) was installed between the detectors 49 and observed, and the polarization characteristics of light emitted from the organic optical device 1 were evaluated. FIG. 11 is a fluorescence micrograph showing the irradiation position of ultraviolet light on the organic optical device 1 of the second embodiment. Between the irradiation position of the ultraviolet light and the detector 49, there is a region 10 of the plate crystal 11 in contact with the diffraction grating 12.
Regarding the polarization direction of the polarizing plate, the normal direction of the plane of the organic optical device 1 (that is, the surface of the diffraction grating 12) was 0 degrees, and the direction parallel to the grooves of the diffraction grating was 90 degrees. And the polarization | polarized-light characteristic of the light emission from the organic optical device 1 was investigated about the polarization direction of 0 degree | times, 30 degree | times, 60 degree | times, and 90 degree | times.

FIG. 12 shows emission spectra in the respective polarization directions of light emitted from the organic device 1. When the polarization direction of the polarizing plate is 0 degree, the emission spectrum is the sharpest and the emission intensity is the strongest. As the polarization direction increases to 30 degrees, 60 degrees, and 90 degrees, the emission intensity decreases remarkably, and the sharpness of the emission spectrum is lost.
As described above, the light emitted from the organic optical device 1 according to the present invention is significantly polarized in the normal direction of the main plane of the plate-like crystal of the organic optical device 1. Therefore, it was found that the light emitted from the organic optical device 1 according to the present invention can be used as light having stronger polarization in the normal direction of the plane crystal surface of the organic optical device 1. This is considered to reflect the polarization characteristics of the organic semiconductor crystal 11 of the organic optical device 1 and to further enhance the effect.

Embodiment 3
The irradiation position of the ultraviolet rays from the mercury lamp 42, the arrangement of the diffraction grating 12 and the detector 49 are set in the same manner as 6 in FIG. 8 of “Embodiment 1”, and are attached to the flat crystal 11 of the organic optical device 1. The light emission 46 radiated to the detector 49 was measured from the end face of the plate crystal 11 between the attached diffraction grating 12 and the detector 49. FIG. 13 is a fluorescence micrograph showing the irradiation position of ultraviolet light on the organic optical device 1 of the third embodiment. Between the irradiation position of the ultraviolet light and the detector 49, there is a region 10 of the plate crystal 11 in contact with the diffraction grating 12. Assuming that the light intensity of the ultraviolet light emitted from the same mercury lamp 42 as that of “Embodiment 1” is 100%, the ultraviolet light whose intensity is reduced to 50%, 25%, and 12.5% of the intensity is organic optical. Device 1 was irradiated. More specifically, by arranging an appropriate ND filter (not shown) between the mercury lamp 42 and the field stop 43 of the light emission measuring device 40 of FIG. The emission spectrum from the optical device 1 was measured.

  FIG. 14 shows an emission spectrum when the intensity of ultraviolet rays irradiated to the organic optical device 1 of the above-described third embodiment is 100%, 50%, 25%, and 12.5%. When the intensity of the ultraviolet light is 100% and the fluorescence intensity at the wavelength at which the emission peak is observed (about 468 nm) is 100%, the emission intensity when the intensity of the ultraviolet light is 50% is 38.6%. The emission intensity was 15.9% when the light intensity was 25%, and 8.7% when the ultraviolet light intensity was 12.5%.

  The stronger the intensity of the ultraviolet light that irradiates the organic optical device 1, the greater the fluorescence intensity obtained by light emission. Therefore, it has been found that it is useful to increase the intensity of the irradiated ultraviolet rays in order to efficiently enhance the light by the organic optical device 1 according to the present invention. As described later, this is considered to be because the light confinement effect by the diffraction grating 12 of the organic optical device 1 of the present invention works effectively with the increase in light intensity. There are no restrictions.

Embodiment 4: Manufacture of another organic optical device (change of grating period of diffraction grating) and evaluation of its light emission performance
Production of Organic Optical Device 1 Another organic optical device 1 was produced using the same method as in Embodiment 1 except that the lattice spacing was changed to 1038 nm. That is, the diffraction grating 12 having a grating interval of 1038 nm was formed on another quartz glass substrate 13. The organic semiconductor flat crystal 11 produced by the sublimation recrystallization method described above was placed on the diffraction grating 12 and physically attached to produce an organic optical device 1 different from the first embodiment. The quartz glass substrate 13 to which the organic semiconductor crystal 11 is attached is cooled to 3 ° C. (refrigerator temperature), and then returned to room temperature, so that the organic semiconductor crystal 11 is more closely attached to the quartz glass substrate 13, and the organic semiconductor The adhesion between the crystal 11 and the quartz glass substrate 13 was improved. As in the first embodiment, BP1T was used as the flat crystal of the organic semiconductor material.
Using the same method as in “Embodiment 1”, the irradiation position of the ultraviolet light of the mercury lamp 42 is moved on a straight line connecting the region of the plate-like crystal 10 to which the detector 49 and the diffraction grating 12 are attached. Then, the light emission performance of the organic optical device 1 was measured. The result was shown to 1-5 of FIG. Here, the irradiation position of the ultraviolet light of 1 to 5 in FIG. 15 with respect to the organic optical device approximately corresponds to the irradiation position of the ultraviolet light of 1 to 5 in FIG. (Strictly speaking, 1 in FIG. 8 corresponds to 2 in FIG. 15, 3 in FIG. 8 corresponds to 3 in FIG. 15, and 5 in FIG. 8 corresponds to 4 in FIG. 15.) 15, ultraviolet rays are irradiated to the left side of the diffraction grating 12 in 1 of FIG. 15, ultraviolet rays are irradiated to the left side of the diffraction grating 12 in 2 of FIG. 15, and diffraction gratings in 3 of FIG. 15. In FIG. 15, the ultraviolet rays are irradiated to the right side of the diffraction grating 12, and the ultraviolet rays are no longer irradiated to the diffraction grating. In FIG. 15, the diffraction grating 12 and the ultraviolet rays are further irradiated. The interval between the irradiated areas is widened.)

  When ultraviolet light was irradiated to the position 1 in FIG. 15, a broad spectrum over a wide wavelength range was observed. The same applies to the case of irradiating ultraviolet light at position 2 in FIG. When ultraviolet light was irradiated at position 3 in FIG. 15, a sharp peak was observed near 492 nm. When ultraviolet light was irradiated at position 4 in FIG. 15, sharp peaks were observed in the vicinity of 492 nm and 497 nm, and the intensity increased. When ultraviolet light was irradiated to the position 5 in FIG. 15, a sharp peak was observed at the same wavelength as in the spectrum at position 4 in FIG. 15, and the peak became sharper and higher.

  The wavelengths of the emission peaks of the organic optical device of Embodiment 1 were about 464 nm and about 468 nm. On the other hand, since the wavelengths of the emission peaks of the organic optical device of the second embodiment were about 492 nm and about 497 nm, the organic optical device of the present invention has various narrownesses by changing the grating period of the diffraction grating. It was found that a linear emission peak wavelength can be obtained. That is, in the present invention, organic optical devices having various narrowed emission peak wavelengths can be easily produced.

Note that the following relation is known as a relational expression between the grating period and the oscillation wavelength (that is, the above-described wavelength at which the spectrum is narrowed):
Λ = pλ / 2n
[(Λ: grating period, λ: oscillation wavelength, n: effective refractive index, p: diffraction order (natural number))].
Adopting 1038 nm as the period of the diffraction grating according to the above formula and 495 nm as the oscillation wavelength between 492 nm and 497 nm, the refractive index of the organic semiconductor material BP1T crystal near the wavelength of 490 nm is 4.53 (measured using mode analysis). When the value was substituted, 19 was obtained as the diffraction order.

Embodiment 5: Influence of grating direction of diffraction grating on light emission FIG. 16 shows a fluorescence spectrum in a case where light emission passes through a region 10 of a flat crystal in the grating direction of the diffraction grating 12. Using the organic optical device 1 having the diffraction grating 12 having a grating period of 1317 nm manufactured in the first embodiment, the detector 49 is parallel to the groove direction of the diffraction grating 12 as shown in 3 and 5 of FIG. The diffraction grating 12 and the detector 49 are connected using the same method as in the “Embodiment 1” except that the organic optical device 1 is arranged so as to be perpendicular to the diffraction grating vector in the main plane. Light emission 46 from the end face of the plate crystal 11 on the line was observed.

  FIG. 16b shows the observed spectrum. 16b of FIG. 16b shows the result at the time of irradiating the ultraviolet light to the area | region 10 of the flat crystal | crystallization which touches the diffraction grating 12 of the organic optical device 1. FIG. 16b of FIG. 16b shows the result when the region 11 of the flat crystal opposite to the detector 49 is irradiated with ultraviolet light to the diffraction grating 12 of the organic optical device 1. FIG. In both cases, a broad spectrum with a wide wavelength range was observed, but no narrow emission peak was observed.

  Therefore, when the detector 49 is arranged in a direction parallel to the groove of the diffraction grating 12, a sharp emission peak due to the organic optical device 1 was not observed. It has been found that the direction in which the emitted light passes through the plate-like crystal 10 in contact with the diffraction grating 12 is preferably at least not parallel to the grooves (not perpendicular to the diffraction grating wave vector in the main plane).

The present invention has the excellent effects as described above, which is considered to be based on the following operation principle.
The operation principle of the organic optical device 1 according to the present invention will be described with reference to FIG.
A rectangular diffraction grating 12 is provided in the quartz glass layer 13 along the organic light emitting waveguide layer 10. This periodic structural change of the diffraction grating 12 is equivalent to a periodic refractive index change, and acts on the light guided through the organic light emitting waveguide layer 10 (guided light) to reflect a part of the guided light. The reflected guided light and the unreflected guided light are combined.
As a result, immediately above the diffraction grating 12 of the organic light emitting waveguide layer 10, when an integral multiple of a half wavelength of light guided in the organic light emitting waveguide layer 10 matches the spatial period of the refractive index change of the diffraction grating, It is considered that the light is amplified by the light confinement action of the organic semiconductor crystal 11 or the diffraction grating 12 immediately above the diffraction grating 12. The relationship between the period of the diffraction grating and the oscillation wavelength (wavelength at which the spectrum is narrowed) is expressed by the formula: Λ = pλ / 2n as described above. Here, Λ is a grating period, λ is an oscillation wavelength, n is an effective refractive index, and p is a diffraction order (natural number).
This will be further described with reference to the drawings.

FIG. 17 shows a case where excitation light is irradiated onto the diffraction grating. A region surrounded by a dotted line indicates a region (also referred to as a “diffraction grating region”) of the flat crystal 10 of an organic semiconductor material provided with a diffraction grating. The diffraction grating wave vector V is shown in a direction perpendicular to the grooves of the diffraction grating. (The diffraction grating wave vector V is also in the direction parallel to the plate-like crystal 11.) For example, the fluorescence generated at P1 is generated at the pair of grooves G1 and G2 located on the outermost side of the end of the diffraction grating. It is reflected several times, amplified and narrowed, and exits from the organic optical device as a light beam 101 for use.
18 and 19 show a case where the excitation light is irradiated to a place other than on the diffraction grating. In both cases, the irradiation points P2 and P3 of the excitation light and the points where the generated light beams 201 and 301 that are amplified and narrowed are extracted from the optical device are on opposite sides of the diffraction grating. In FIG. 19, the light beam 301 is parallel to the wave vector V and overlaps inside the diffraction grating region (region surrounded by a dotted line). In the case of FIG. 19, it is most advantageous as the positional relationship between the location P3 where the excitation light is irradiated and the location where the fluorescence generated from the optical device is extracted.

FIG. 20 also shows a case where the excitation light is irradiated to a place other than on the diffraction grating. The fluorescence generated from P4 does not pass through G1 and travels in the diffraction grating region from a direction substantially oblique to the diffraction grating wave vector V. Even in the case shown in FIG. 20, fluorescence can be used effectively.
In FIGS. 17 to 20, when the fluorescence is reflected inside the diffraction grating region, the wave number vector of the light before being reflected and the wave number vector of the reflected light are line symmetric with respect to the diffraction grating wave vector V. Therefore, when an even number of reflections occur, the wave vector is stored. Further, the fluorescence incident on the diffraction grating region is also reflected by the flat crystal or dielectric material of the organic semiconductor material on both sides of each groove constituting the diffraction grating, but these are omitted in the figure. Only reflections at G1 and G2 are shown.

As shown in FIGS. 18 to 20, when the irradiation location is outside the diffraction grating region, the shortest distance between the irradiation location and the diffraction grating region is preferably 1000 μm. In the case where the irradiated portion has a spread, this condition is applied in consideration of a set of irradiated portions. This is because the excited state (exciton) does not deactivate from the irradiated part, diffuses the shortest distance, reaches the diffraction grating region, receives stimulated radiation, and contributes to amplification and narrowing of light. Because it can.
The present invention is considered to be based on the operation principle as described above, but the present invention is not limited by such an operation principle.

  The present invention provides an organic optical device, a manufacturing method thereof, and a light enhancement or light narrowing method. The present invention is particularly useful for obtaining light emission having a clear peak using broad excitation light that is not necessarily a single wavelength, such as a mercury lamp.

FIG. 1 is a schematic view showing one embodiment of an organic optical device according to the present invention. FIG. 2 shows a schematic diagram of a diffraction grating. FIG. 3 shows a three-dimensional image of a portion of a diffraction grating on a quartz glass substrate, as observed with an atomic force microscope (AFM). FIG. 4 shows a cross-sectional view in the direction perpendicular to the grating direction of the diffraction grating shown in the AFM image. FIG. 5 schematically shows a sublimation recrystallization apparatus for organic semiconductor materials. FIG. 5 a schematically shows an overall outline of the sublimation recrystallization apparatus 20. FIG. 5b schematically shows the test tube 21 for sublimation recrystallization of the organic semiconductor material in more detail. FIG. 6 shows a photomicrograph of an example of an organic optical device. FIG. 7 schematically shows a luminescence measuring apparatus 40 using a fluorescence microscope. 1-6 of FIG. 8 shows the fluorescence micrograph at the time of irradiating an organic optical device with an ultraviolet-ray. FIG. 9 shows an enlarged fluorescence micrograph of the diffraction grating 12 visible in FIG. FIG. 10 shows each fluorescence spectrum observed when ultraviolet rays are irradiated to positions 1 to 6 in FIG. FIG. 11 is a fluorescence micrograph showing the irradiation position of ultraviolet light on the organic optical device of the second embodiment. FIG. 12 shows an emission spectrum in each polarization direction of light emitted from the organic device of the second embodiment. FIG. 13 is a fluorescence micrograph showing the irradiation position of ultraviolet light on the organic optical device of the third embodiment. FIG. 14 shows an emission spectrum when the intensity of ultraviolet rays applied to the organic optical device is 100%, 50%, 25%, and 12.5%. FIG. 15 shows a fluorescence spectrum observed by irradiating another organic optical device with a changed lattice spacing with ultraviolet rays. FIG. 16 shows a fluorescence spectrum when light emission passes through the region 10 in the grating direction of the diffraction grating 12. FIGS. 3a and 5b show the arrangement of the organic optical device 1 such that the detector 49 is parallel to the direction of the grooves of the diffraction grating 12. FIG. FIG. 16b shows the spectrum observed with the arrangement of 3 and 5 in FIG. FIG. 17 schematically shows a state in which the generated fluorescence proceeds when the portion to which the excitation light is irradiated is on the diffraction grating 12. In FIG. 18, the excitation light is irradiated to a part other than the diffraction grating, and the irradiation part P2 of the excitation light and the part from which the generated and narrowed light beam 201 is taken out from the optical device are located on both sides of the diffraction grating. When it exists in the other side, a mode that the light ray 201 progresses is shown typically. FIG. 19 shows that a portion other than the diffraction grating is irradiated with the excitation light, and the excitation light irradiation portion P3 and the generated and narrowed light beam 301 are taken out from the optical device with the diffraction grating interposed therebetween. When it exists in the other side, a mode that it advances in parallel with the ray 301 diffraction grating vector V is shown typically. FIG. 20 shows that when excitation light is irradiated to a place other than on the diffraction grating, the fluorescence generated from P4 does not pass through G1 and travels through the diffraction grating region from a direction oblique to the diffraction grating wavenumber vector V. Is shown schematically.

Explanation of symbols

1 Organic optical device,
10 organic light emitting waveguide layer,
11 Organic semiconductor crystals,
12 diffraction grating,
13 quartz glass layer,
20 Sublimation recrystallization equipment,
21 test tubes,
23 glass rings, 23a-d glass rings,
24 Powdered organic semiconductor material,
25 glass tubes,
26 nitrogen gas,
31 Nitrogen cylinder,
32 flow meter,
34 Cold trap,
35 Bubbler,
40 Luminescence measuring device,
41 fluorescence microscope,
42 Mercury lamp,
43 Field stop,
44 filters,
45 mirror,
46 Luminescence (or fluorescence),
47 Sharp cut filter,
48 optical fiber,
49 detector,
101 rays 201 rays 301 rays 401 rays

Claims (5)

(A) An organic optical device comprising a flat crystal of an organic semiconductor material and (B) a diffraction grating,
(B) The diffraction grating is an organic optical device provided on at least one main plane of a flat crystal of the organic semiconductor material (A).   (B) The organic optical device according to claim 1, wherein the diffraction grating is formed on a surface of a dielectric material.   The organic optical device according to claim 1 or 2 for optical amplification or optical narrow line width. (1) (A) preparing a flat crystal of an organic semiconductor material,
(2) (B) a step of forming a diffraction grating on the surface of the dielectric, and (3) (A) a step of arranging an organic semiconductor flat crystal on the (B) diffraction grating of the dielectric surface. A method for producing an organic optical device. (I) (A) preparing a flat crystal of an organic semiconductor material;
(Ii) (A) a step of providing a diffraction grating on at least one main plane of the flat crystal of the organic semiconductor material; and (iii) (A) irradiating the flat crystal of the organic semiconductor material with light. (A) Fluorescence is generated in the organic semiconductor flat crystal, and (B) the flat crystal region of the organic semiconductor material provided with the diffraction grating is in a direction not perpendicular to the diffraction grating wave vector of the diffraction grating. And a method of emitting amplified or narrowed light including a process through which the fluorescence passes.

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