CN2432001Y - Laser interference photoetching system - Google Patents

Laser interference photoetching system Download PDF

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Publication number
CN2432001Y
CN2432001Y CN 00223444 CN00223444U CN2432001Y CN 2432001 Y CN2432001 Y CN 2432001Y CN 00223444 CN00223444 CN 00223444 CN 00223444 U CN00223444 U CN 00223444U CN 2432001 Y CN2432001 Y CN 2432001Y
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China
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beam
laser
beam splitter
photoetching system
shutter
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CN 00223444
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Chinese (zh)
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张锦
冯伯儒
蒋世磊
候德胜
宗德蓉
苏平
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中国科学院光电技术研究所
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Abstract

The utility model relates to a laser interference photoetching system, which belongs to the improvement of a fine pattern photoetching system. The laser interference photoetching system is characterized in that light emitted by a laser is divided into three beams of parallel light by a light splitter and a reflecting mirror device after passing through a beam expanding collimator and a needle hole spatial filter, and then is crossed and superimposed to generate interference; one beam can be blocked by a shutter; a photosensitive material base sheet can be arbitrarily rotated through a rotating mechanism. The laser interference photoetching system can carry out multi-beam multi-time interference and exposure, and can be used for generating a plurality of hole array and linear array patterns with different periodic structure. The photoetching system has the advantages of high resolution, a large viewing field, long focal depth, etc. The utility model can be used for manufacturing microelectronic and optoelectronic devices, large screen displays, field emitters, etc.

Description

一种激光干涉光刻系统 A laser interference lithography system

本实用新型是一种激光干涉光刻系统,属于对微细图形光刻系统的进一步改进。 The present invention is a laser interference lithography system, belonging to the further development of the fine pattern lithography system.

传统微细图形光刻系统有接触式/接近式曝光系统。 Fine pattern lithography system with a conventional contact / proximity exposure system. 接触式曝光系统因接触压紧方式使掩模图形或基片上的光刻胶损坏,只适宜于几微米以上的光刻图形和少量次数的光刻曝光。 Contact exposure system due to the contact pressure-tight manner in the photoresist mask pattern or damage to the substrate, suitable only for lithographic exposure of more than a few microns and a few times the lithography patterning. 接近式曝光系统虽然可以避免接触损坏,但由于光的衍射,一般只适宜于2-3微米以上的光刻曝光。 A proximity exposure system will avoid damaging contact, but due to the diffraction of light, is generally suitable only for 2-3 micron lithographic exposure. 投影式曝光不但可以通过增大投影曝光系统数值孔径和缩短曝光波长及改进工艺来提高分辨率,而且不损伤掩模和基片上的光刻胶。 Projection exposure not only to improve the resolution by increasing the numerical aperture of the projection exposure system and shorten the exposure wavelength and to improve the process, but does not damage the photoresist on the mask and the substrate. 但随着分辨率的提高,要求更大的数值孔径和更短的波长,因此使系统设计、制作困难,成本昂贵;而且随曝光波长的缩短,系统焦深更短,透镜光学材料选择困难增大,光源也难以解决。 However, the higher resolution requires a larger numerical aperture and a shorter wavelength, so that the system design, production is difficult and expensive; and with shorter exposure wavelength, the system Shengeng short focus lens optical material is difficult to select by large, it is difficult to solve the light source.

本实用新型的目的在于克服现有技术的不足而提供一种可实现高分辨率、大视场、长焦深的激光干涉光刻系统。 The present invention aims to overcome the disadvantages of the prior art and to provide a high resolution, large field of view, focal depth of laser interference lithography system.

本实用新型可通过以下技术措施实现:激光干涉光刻系统包括激光器、分光镜、全反射镜、衰减器、转动机构和快门;主光路顺序安置激光器、将激光转换为平行光束的扩束准直空间滤波装置、快门、以及将激光分为分别到达基片的反射光束①和透射光束②的分光镜;反射光束①光路上安置全反射镜和衰减器;透射光束②光路上顺序安置将透射光束②分为反射光束③和透射光束②的分束器、衰减器和快门;反射光束③光路上放置反射镜和衰减器;在两次曝光之间使感光材料基片转动一定角度的转动机构连接基片。 The present invention can be achieved by the following technical measures: laser interference lithography system includes a laser, a beam splitter, total reflection mirror, an attenuator, and a shutter rotating mechanism; master laser light path sequentially disposed, the laser beam is converted into a parallel beam expander collimators spatial filtering means, a shutter, and the laser beam into the reflector are reaching the substrate ① and ② of the transmitted beam spectroscope; disposed reflection mirror ① and the attenuator optical path of the reflected light beam; ② transmission beam sequentially disposed on the optical path of the transmitted beam ③ ② divided into a reflected beam and a transmitted beam ② beam splitter, and a shutter attenuator; the reflected light beam is placed on the optical path mirrors ③ and the attenuator; exposing the photosensitive material between the two substrates angle of rotation of the rotary mechanism is connected to a certain substrate.

本实用新型也可通过以下技术措施实现:激光干涉光刻系统的分光镜和分束器是可调节激光束①、②和③的强度的可变分束器。 The present invention may also be achieved by the following technical measures: laser interference lithography system beam splitter and the beam splitter is adjustable variable intensity laser beams ①, ② and ③ of the beam splitter.

本实用新型还可通过以下技术措施实现:激光干涉光刻系统的反射镜、全反射镜是改变光束之间的夹角的可移动反射镜。 The present invention can also be implemented through the following technical measures: laser interference lithography system reflecting mirror, a total reflection mirror to change the angle between the light beam is a movable mirror.

本实用新型与现有技术相比有以下优点:干涉光刻图形由激光器发出的光通过扩束准直和针孔空间滤波器和分光镜、全反射镜形成三束并以一定交角叠加产生干涉形成。 The present invention over the prior art has the following advantages: the interference lithographic patterning of light collimation and beam expander and spatial filter pinhole emitted by the laser beam splitter, total reflection mirror and forming the three-beam interference at a certain intersecting angle superimposition form. 通过控制快门以产生不同的光束组合进行曝光,可产生不同周期性的孔阵和线阵图形。 By controlling the shutter combinations to produce different beam exposure, can produce different periodic hole arrays and the line pattern. 可移动反射镜可改变光束①、②和③之间的交角,以改变产生的干涉图形的周期结构。 The movable mirror may change the angle of intersection between the beams ①, ② and ③, the periodic structure to change the interference pattern produced. 光束光路中设置可变分束器和衰减器以调节光束①、②和③之间的相对强度以及各光束的强度,以产生高对比度图形,提高图形质量。 Beam path the beam splitter is provided a variable attenuator to adjust the beam and ①, the relative strength between ② and ③ and the intensity of each light beam, to produce a high-contrast pattern, to improve the image quality.

下面结合附图和实施例对本实用新型作进一步说明。 The present invention is further described as below in conjunction with the accompanying drawings and embodiments.

附图为本实用新型实施例的光路结构图。 BRIEF embodiment of the present invention is a configuration diagram of an optical path.

如图所示,记录多光束干涉产生的孔阵或线阵图形时,来自激光干涉光刻系统的激光器1的激光束经扩束准直空间滤波装置2变为平行光束,再经快门13到达分光镜3;分光镜3将激光分为分别到达基片的反射光束①和透射光束②。 As shown, the recording array in FIG hole array or linear interference pattern generated by the multi-beam laser interference lithography system from the laser beam by a laser beam expander collimation spatial filtering means 2 into a parallel beam by the shutter 13 and then reach the beam splitter 3; 3 a laser beam splitter into a reflected light beam respectively to ① transmitted beam reaching the substrate and ②.

经分光镜3反射的反射光束①由全反射镜4反射后,通过可调衰减器5到达涂有感光材料(光刻胶等)的基片6。 ① reflected light beam reflected by the beam splitter 3 after the total reflection mirror 4 is reflected by an adjustable attenuator reaches 5 coated with a photosensitive material (photoresist and the like) of the substrate 6.

透射光束②经分束器7分为反射光束③和透射光束②。 ② transmitted beam through the beam splitter 7 is divided into a transmitted beam and a reflected beam ③ ②.

透射光束②经衰减器10和快门11到达基片6;反射光束③经反射镜8和衰减器9到达基片6。 ② transmitted beam by the attenuator 10 and the shutter 11 to reach the substrate 6; ③ the reflected light beam by the reflecting mirror 8 and the attenuator 9 to reach the substrate 6.

分光镜3和分束器7是可调节激光束①、②、③的强度的可变分束器。 Beam splitter 3 and the beam splitter 7 is adjustable variable beamsplitter intensity of the laser beams ①, ②, ③ a. 全反射镜4和全反射镜8可移动,以改变光束夹角,相应改变干涉图形周期结构。 The total reflection mirror 4 and the total reflection mirror 8 is movable to change the angle of the light beam, a periodic structure corresponding to the interference pattern changes.

使感光材料基片6转动一定角度的转动机构12连接基片6。 Photosensitive material of the substrate 6 is rotated a certain angle turning mechanism 12 is connected to the substrate 6.

快门11挡掉光束②时,光束①和③产生双光束干涉;当快门11开启使光束②通过时,光束①、②和③可产生三光束干涉;快门11挡掉光束②,用光束①和③曝光一次后,转动机构12使基片6在基片平面内旋转90°角,再进行第二次曝光,即为四光束曝光;光束①、②、③曝光后,基片6再转动90°角,再用光束①、③曝光,,即为五光束曝光。 When the shutter 11 to block off the beam ②, ③ and ① beam generating two-beam interferometer; when the shutter 11 is turned on when the light beam by ② beam ①, ② and ③ can produce three-beam interference; ② the shutter 11 to block off the beam, and the light beam ① ③ after the exposure time, the rotation mechanism 12 so that the substrate 6 is rotated 90 ° angle in the plane of the substrate, and then a second exposure, that is, four beam exposure; beams ①, ②, ③ after exposure, the substrate 6 and then rotated 90 ° angle, then beam ①, ③ ,, namely five exposure beam exposure.

整个系统的曝光和曝光量由快门13控制。 -Exposure of the entire system is controlled by a shutter 13.

Claims (3)

1.一种激光干涉光刻系统,包括激光器(1)、分光镜(3)、反射镜(4)、分束器(7)、反射镜(8)、快门(11)和(13),其特征在于:主光路顺序安置激光器(1)、将激光转换为平行光束的扩束准直空间滤波装置(2)、快门(13)、以及将激光分为分别到达基片(6)的反射光束①和透射光束②的分光镜(3);反射光束①光路上安置全反射镜(4)和衰减器(5);透射光束②光路上顺序安置将透射光束②分为反射光束③和透射光束②的分束器(7)、衰减器(10)和快门(11);反射光束③光路上放置反射镜(8)和衰减器(9);在两次曝光之间使感光材料基片(6)转动一定角度的转动机构(12)连接基片(6)。 A laser interference lithography system comprising a laser (1), beam splitter (3), a mirror (4), a beam splitter (7), a mirror (8), a shutter (11) and (13), wherein: the main light path sequentially disposed laser (1), the laser light into a beam expander a parallel beam collimation spatial filtering means (2), a shutter (13), and the laser light into respectively to the reflection reach the substrate (6) ① the beam and the beam splitter (3) ② of the transmitted light beam; an optical path of the reflected light beam is disposed ① total reflection mirror (4) and an attenuator (5); ② transmission beam sequentially disposed on the optical path of the transmitted light beam into a reflected beam ② and ③ transmission ② the beam splitter (7), attenuator (10) and shutter (11); positioning the optical path of the reflected light beam ③ mirror (8) and an attenuator (9); exposing the photosensitive material between the two substrates (6) the angle the rotation mechanism (12) connected to the substrate (6).
2.根据权利要求1所述的激光干涉光刻系统,其特征在于:分光镜(3)和分束器(7)是可调节激光束①、②、③的强度的可变分束器。 2. Laser according to claim 1 interference lithography system, wherein: the beam splitter (3) and the beam splitter (7) is adjustable variable intensity laser beams ①, ②, ③ beam splitter.
3.根据权利要求1或2所述的激光干涉光刻系统,其特征在于:全反射镜(4)和(8)是改变光束①、②、③之间的夹角的可移动反射镜。 The laser of claim 1 or claim 2, wherein the interference lithography system, comprising: a total reflection mirror (4) and (8) change the angle between the beams ①, ②, ③ movable mirror.
CN 00223444 2000-06-21 2000-06-21 Laser interference photoetching system CN2432001Y (en)

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CN103706947A (en) * 2013-11-14 2014-04-09 中国科学技术大学 Large-area manufacturing method and processing system for surfaces of micrometer and nanometer structures with tunable periods and tunable morphologies
CN104439716A (en) * 2014-11-17 2015-03-25 深圳锜宏伟科技有限公司 Laser processing system and laser processing method
CN104708196A (en) * 2015-01-21 2015-06-17 长春理工大学 Manufacturing method for increasing effective photosensitive area of photoelectric material
CN104708196B (en) * 2015-01-21 2017-05-10 长春理工大学 Manufacturing method for increasing effective photosensitive area of photoelectric material
CN108227063A (en) * 2018-01-31 2018-06-29 中国科学院光电技术研究所 A kind of integrated polarizing grating preparation system and method

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