CN1752847A - Adopt the image interference photoetching method and the system of an acoustooptic deflector - Google Patents
Adopt the image interference photoetching method and the system of an acoustooptic deflector Download PDFInfo
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- CN1752847A CN1752847A CN 200510086827 CN200510086827A CN1752847A CN 1752847 A CN1752847 A CN 1752847A CN 200510086827 CN200510086827 CN 200510086827 CN 200510086827 A CN200510086827 A CN 200510086827A CN 1752847 A CN1752847 A CN 1752847A
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- acoustooptic deflector
- exposure
- deflector
- mask
- image interference
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Abstract
Adopt the image interference photoetching method and the system of an acoustooptic deflector, it is characterized in that only using an acoustooptic deflector, the laser beam of sending from laser instrument is deflected, when acoustooptic deflector does not add ultrasonic power, the direct transmitted sound light deflector of laser beam is for mask provides vertical illumination; When the acoustooptic deflector horizontal direction adds the ultrasonic power of certain frequency, then produce the first-order diffraction light that deflection angle is proportional to ultrasonic frequency at directions X, for horizontal direction biasing exposure provides illumination, when adding ultrasonic power on the acoustooptic deflector vertical direction, then provide illumination for vertical direction biasing exposure.By changing the conveniently adjusted first-order diffraction light intensity of ultrasonic power, the exposure intensity control and the different space frequency composition exposure dose of optical filter of being easy to realize to decay controlled, can control the deflection angle size in real time by changing ultrasonic frequency, three exposures that image interference photoetching is required be can realize flexibly, quickly and easily, exposure efficiency and resist graphical quality improved.
Description
Technical field
The present invention relates to the image interference photoetching method and the system of an acoustooptic deflector of a kind of employing, belong to improvement imaging Interferometric Lithography.
Background technology
Imaging Interferometric Lithography is a kind of with multiexposure, multiple exposure different space frequency component and non-coherent addition, to improve the novel photoetching technique of photoetching resolution.General image interference photoetching method is to adopt laser instrument, beam splitter, catoptron, spatial filter, the beam-expanding collimation device, mask, imaging optical system and resist substrate etc. are formed the image interference etching system, document Xiaolan Chen and S.R.J.Brueck, Imaginginterferometric lithography for arbitrary patterns, SPIE Proceedings Vol.3331,214-224,1997 and document S.R.J.Brucek, Imaging interferometriclithography, Microlithography World, Winter 1998, image interference photoetching principle and technology have been introduced among the 2-10, but very little for the optimization of concrete enforcement and system and practical research, the general employing adjusted light path to realize three exposures between the exposure, image alignments etc. are the key issues of still needing and solving, and exposure efficiency is not high, is unfavorable for applying.
Summary of the invention
The technical issues that need to address of the present invention are: the deficiency that overcomes existing method and system, provide a kind of usefulness an acoustooptic deflector, by regulating ultrasonic frequency control bundle deflection angle and controlling light intensity by changing ultrasonic power, finish the method and system of three times required exposures of image interference photoetching, and need not use the decay optical filter to regulate light intensity, need not the light path adjustment between three exposures, there is not the image alignment problem, and, help improving the exposure efficiency of image interference photoetching and be beneficial to and advance it to develop to practicability by electronic shutter control time shutter.
The technical solution adopted in the present invention is: adopt the image interference photoetching method of an acoustooptic deflector, its characteristics are:
(1) adds an acoustooptic deflector between laser instrument in the image interference etching system and the completely reflecting mirror;
(2) when acoustooptic deflector does not add the ultrasound-driven voltage power, the direct transmitted sound light deflector of laser beam that sends from laser instrument provides the vertical illumination light beam for mask, realizes the low frequency component exposure;
(3) when adding ultrasound-driven voltage on the acoustooptic deflector horizontal direction, its first-order diffraction light in surface level with angle of optical axis deviation, for mask provides in the surface level biasing illumination, realize directions X biasing exposure;
(4) when adding ultrasound-driven voltage on the acoustooptic deflector vertical direction, its first-order diffraction in vertical plane with angle of optical axis deviation, for mask provides biasing illumination in the vertical plane, realize Y direction biasing exposure, finish three times required exposures of image interference photoetching.
An electronic shutter is set behind laser instrument, control three time shutter respectively to control each time exposure dose, realize the exposure dose ratio of different space frequency composition, optimize high and low empty exposure frequently, in light path, need not adopt the decay optical filter to go to control each road light intensity, improve the laser utilization factor.
Ultrasound-driven voltage on the described acoustooptic deflector is provided by the acousto-optic power supply.
Adopt the image interference etching system of an acoustooptic deflector, it is characterized in that: comprise laser instrument, electronic shutter, acoustooptic deflector, acousto-optic power supply, completely reflecting mirror, beam expanding lens, spatial filter, colimated light system, mask, imaging optical system and resist substrate, the acousto-optic power supply is added to the ultrasound-driven voltage V on the acoustooptic deflector
1=V
2=0 o'clock, the laser beam of being sent by laser instrument is behind electronic shutter, direct transmitted sound light deflector, expand bundle by beam expanding lens, after spatial filter filtering and colimated light system collimation, become the parallel light mask, by imaging optical system mask is imaged onto on the resist substrate, realizes the vertical exposure of exposure mask pattern low frequency component; When the acousto-optic power supply is added to ultrasound-driven voltage V on the acoustooptic deflector
2=0, V
1During for definite value, the laser beam of sending by laser instrument, in surface level, produce deflection by acoustooptic deflector, through catoptron, beam expanding lens, spatial filter and colimated light system, at directions X biasing illumination mask, be imaged onto on the resist substrate by imaging optical system, realize the biasing exposure of directions X high fdrequency component; When the acousto-optic power supply is added to ultrasound-driven voltage V on the acoustooptic deflector
1=0, V
2During for definite value, the laser beam of sending by laser instrument, in vertical plane, produce deflection by acoustooptic deflector, through catoptron, beam expanding lens, spatial filter and colimated light system, at Y direction biasing illumination mask, be imaged onto on the resist substrate by imaging optical system, realize the biasing exposure of Y direction high fdrequency component, thereby finish three exposure process of image interference photoetching.
The present invention has compared following advantage with existing system:
(1) owing to only adopts an acoustooptic deflector, by adding the change of ultrasonic voltage on the acoustooptic deflector, illumination for exposure is provided three times, need not the light path adjustment between three exposures, system does not have mechanical moving-member and mechanical vibration influence, flexible and convenient operation, the pattern alignment problem that does not exist real-time adjustment light path to be produced can improve exposure efficiency.
(2) with changing ultrasound wave voltage-regulation deflection angle size, be beneficial to the light path adjustment, change the first-order diffraction light intensity, be beneficial to the adjusting exposure dose, need not use the decay optical filter to regulate by the ultrasonic voltage of controlling and driving.
(3) be strict with under the ultrasonic power stable condition, adopting an electronic shutter as exposure switch and time shutter control, conveniently adjusted exposure dose and high and low spatial frequency component exposure dose ratio.
(4) adopt an acousto-optic modulator and an electronic shutter, system is succinct, and cost saving reduces the light path adjustment between the exposure, improves exposure efficiency.
Description of drawings
Fig. 1 is the image interference photoetching system schematic of an acoustooptic deflector of employing of the present invention.
Embodiment
As shown in Figure 1, the image interference etching system of an acoustooptic deflector of employing of the present invention comprises laser instrument 1, electronic shutter 2, acoustooptic deflector 3, acousto-optic power supply 4, completely reflecting mirror 5, beam expanding lens 6, spatial filter 7, colimated light system 8, mask 9, imaging optical system 10, resist substrate 11, acousto-optic power supply 4 are added to the ultrasound-driven voltage V on the acoustooptic deflector 3
1=V
2=0 o'clock, the laser beam of being sent by laser instrument 1 is behind electronic shutter 2, direct transmitted sound light deflector 3, expand bundle by beam expanding lens 6, after spatial filter 7 filtering and colimated light system 8 collimations, become parallel light mask 9, by imaging optical system 10 mask 9 is imaged onto on the resist substrate 11, realizes the vertical exposure of exposure mask pattern low frequency component; Work as V
2=0, V
1During for certain value, the laser beam of sending by laser instrument 1, in surface level, produce deflection by acoustooptic deflector 3, through catoptron 5, beam expanding lens 6, spatial filter 7 and colimated light system 8, at directions X biasing illumination mask 9, be imaged onto on the resist substrate 11 by imaging optical system 10, realize the biasing exposure of directions X high fdrequency component; In like manner, work as V
1=0, V
2During for certain value, realize the biasing exposure of Y direction high fdrequency component, so finish three exposure process of image interference photoetching.
Described acoustooptic deflector and power supply and electronic shutter are ripe conventional products.Usual acoustic light deflector material is tellurium dioxide, lithium niobate etc., depends on the acoustooptic deflector of different purposes.The acousto-optic supply frequency changes, and deflection angle is changed; The acousto-optic supply voltage changes, and can change diffraction light intensity.According to different acoustooptic deflector designing requirements, the acoustooptic deflector supply voltage is the 10-15 volt, can reach stronger diffraction light output; And supply frequency reaches as high as more than the 100MHz at present, and conventional frequency is tens MHz, and deflection angle is about 4 °-5 ° in this case.
Electronic shutter also is a conventional products, can control power supply by it and control the unlatching of shutter, closes and the opening time.
Claims (4)
1, adopt the image interference photoetching method of an acoustooptic deflector, it is characterized in that:
(1) adds an acoustooptic deflector between laser instrument in the image interference etching system and the completely reflecting mirror;
(2) when acoustooptic deflector does not add the ultrasound-driven voltage power, the direct transmitted sound light deflector of laser beam that sends from laser instrument provides the vertical illumination light beam for mask, realizes the low frequency component exposure;
(3) when adding ultrasound-driven voltage on the acoustooptic deflector horizontal direction, its first-order diffraction light in surface level with angle of optical axis deviation, for mask provides in the surface level biasing illumination, realize directions X biasing exposure;
(4) when adding ultrasound-driven voltage on the acoustooptic deflector vertical direction, its first-order diffraction in vertical plane with angle of optical axis deviation, for mask provides biasing illumination in the vertical plane, realize Y direction biasing exposure, finish three times required exposures of image interference photoetching.
2, the image interference photoetching method of an acoustooptic deflector of employing according to claim 1 is characterized in that: an electronic shutter is set behind laser instrument, controls three time shutter respectively to control each time exposure dose.
3, the image interference photoetching method of an acoustooptic deflector of employing according to claim 1, it is characterized in that: the ultrasound-driven voltage on the described acoustooptic deflector is provided by the acousto-optic power supply.
4, adopt the image interference etching system of an acoustooptic deflector, it is characterized in that: comprise laser instrument, electronic shutter, acoustooptic deflector, acousto-optic power supply, completely reflecting mirror, beam expanding lens, spatial filter, colimated light system, mask, imaging optical system and resist substrate, the acousto-optic power supply is added to the ultrasound-driven voltage V on the acoustooptic deflector
1=V
2=0 o'clock, the laser beam of being sent by laser instrument is behind electronic shutter, direct transmitted sound light deflector, expand bundle by beam expanding lens, after spatial filter filtering and colimated light system collimation, become the parallel light mask, by imaging optical system mask is imaged onto on the resist substrate, realizes the vertical exposure of exposure mask pattern low frequency component; When the acousto-optic power supply is added to ultrasound-driven voltage V on the acoustooptic deflector
2=0, V
1During for definite value, the laser beam of sending by laser instrument, in surface level, produce deflection by acoustooptic deflector, through catoptron, beam expanding lens, spatial filter and colimated light system, at directions X biasing illumination mask, be imaged onto on the resist substrate by imaging optical system, realize the biasing exposure of directions X high fdrequency component; When the acousto-optic power supply is added to ultrasound-driven voltage V on the acoustooptic deflector
1=0, V
2During for definite value, the laser beam of sending by laser instrument, in vertical plane, produce deflection by acoustooptic deflector, through catoptron, beam expanding lens, spatial filter and colimated light system, at Y direction biasing illumination mask, be imaged onto on the resist substrate by imaging optical system, realize the biasing exposure of Y direction high fdrequency component, thereby finish three exposure process of image interference photoetching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510086827XA CN100483256C (en) | 2005-11-10 | 2005-11-10 | Image interference photoetching method using end acousto-optical deflector and its system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510086827XA CN100483256C (en) | 2005-11-10 | 2005-11-10 | Image interference photoetching method using end acousto-optical deflector and its system |
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| CN1752847A true CN1752847A (en) | 2006-03-29 |
| CN100483256C CN100483256C (en) | 2009-04-29 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236267A (en) * | 2011-06-29 | 2011-11-09 | 苏州大学 | Laser interference lithographic system |
| CN103092003A (en) * | 2013-01-17 | 2013-05-08 | 清华大学 | Laser interference lithography system |
| CN109948802A (en) * | 2019-03-22 | 2019-06-28 | 清华大学 | A kind of addressing control system |
| US11513418B2 (en) | 2019-03-22 | 2022-11-29 | Tsinghua University | Addressing system, addressing apparatus and computing apparatus |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4541712A (en) * | 1981-12-21 | 1985-09-17 | Tre Semiconductor Equipment Corporation | Laser pattern generating system |
| US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
| CN2252071Y (en) * | 1995-12-25 | 1997-04-16 | 曹勇 | High-efficient laser incising and drawing device |
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
| CN1263999C (en) * | 2002-08-21 | 2006-07-12 | 中国科学院长春光学精密机械与物理研究所 | Cylindrical grating shaft interference encoder |
| CN100458565C (en) * | 2003-10-15 | 2009-02-04 | 中国科学院光电技术研究所 | Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof |
-
2005
- 2005-11-10 CN CNB200510086827XA patent/CN100483256C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236267A (en) * | 2011-06-29 | 2011-11-09 | 苏州大学 | Laser interference lithographic system |
| CN102236267B (en) * | 2011-06-29 | 2014-05-28 | 苏州大学 | Laser interference lithographic system |
| CN103092003A (en) * | 2013-01-17 | 2013-05-08 | 清华大学 | Laser interference lithography system |
| CN103092003B (en) * | 2013-01-17 | 2015-01-07 | 清华大学 | Laser interference lithography system |
| CN109948802A (en) * | 2019-03-22 | 2019-06-28 | 清华大学 | A kind of addressing control system |
| CN109948802B (en) * | 2019-03-22 | 2020-12-22 | 清华大学 | Addressing control system |
| US11513418B2 (en) | 2019-03-22 | 2022-11-29 | Tsinghua University | Addressing system, addressing apparatus and computing apparatus |
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| Publication number | Publication date |
|---|---|
| CN100483256C (en) | 2009-04-29 |
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