CN100458565C - Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof - Google Patents
Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof Download PDFInfo
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- CN100458565C CN100458565C CNB2003101001709A CN200310100170A CN100458565C CN 100458565 C CN100458565 C CN 100458565C CN B2003101001709 A CNB2003101001709 A CN B2003101001709A CN 200310100170 A CN200310100170 A CN 200310100170A CN 100458565 C CN100458565 C CN 100458565C
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Abstract
A method and system for acousto-optic FM one-shot exposing imaging interference photo-etching characterizes in using two acousto-optic frequency modulators to move the laser frequency with lambda wave length emitted from a laser to form beams of laser for off-axis illumination light mask on X direction, to form an other beam of laser used in off-axis illuminating the same light mask and using the laser of lambda wavelength to vertically illuminate the light mask. Since three beams of light are incoherent interference beams, images generated by them are laminated incoherently to form a final mask picture, which does not use three laser in different wavelength to expose three times, only needs one shot exposing to finish the imaging photo-etching exposure.
Description
Technical field
The present invention relates to a kind of acousto-optic frequency modulation single exposure image interference photoetching method and system thereof, belong to three times exposure image interference photoetching methods of generation Micropicture and the improvement of system.
Background technology
General image interference photoetching method and system are by laser instrument, beam expander, collimating apparatus and spatial filter, reflection unit, photomask, compositions such as imaging optical system and resist silicon chip, and adopt three exposure process to finish the interference lithography imaging, document Steven R.J.Brueck, Imaging interferometriclithography, Microlithography World, Winter 1998,2-10. and document Xiaolan Chen and S.R.J.Brueck, Imaging interferometric lithography:AWavelength division multiplex approach to extending opticallithogaraphy, J.Vac.Sci.Technol.B 16 (6): 3392-3397, introduced among the Nov./Dec.1998 about image interference photoetching (three exposures) technology.This three exposure technique schematic diagrams at first carry out projection imaging first time photolithographic exposure with vertical illumination optical illumination photomask as shown in Figure 2; Next off axis illumination Mingguang City mask that is used in the x deviation in driction carries out projection imaging second time photolithographic exposure; The off axis illumination Mingguang City mask that is used in the y deviation in driction at last carries out projection imaging photolithographic exposure for the third time.Image interference photoetching has the ability that traditional projection lithography produces arbitrary graphic (being determined by photomask), has the high resolution capacity of interference photoetching technology simultaneously.But the weak point of this three times exposure image interference photoetchings is the exposure technology complexity, the aligning difficulty between three exposures; Low frequency component is recycled and reused for exposure, has reduced the modulation transfer function of radio-frequency component, reduces picture contrast and resolution, and three exposures make the exposure cycle lengthening, the reduction exposure efficiency.
Summary of the invention
The present invention needs technology to deal with problems: the deficiency that overcomes existing method and system, provide a kind of need to carry out single exposure, can regulate low-and high-frequency composition exposure intensity ratio, improve contrast and resolution and shorten the time shutter and the new image interference photoetching method and the system thereof of raising exposure efficiency.
Technical scheme that the present invention adopts is: acousto-optic frequency modulation single exposure image interference photoetching method, its characteristics are: adopting the acousto-optic frequency modulator to make from the wavelength of laser instrument output is the laser of λ, frequency modulation is to have two-beam λ+Δ λ and the λ-Δ λ that wavelength difference is Δ λ, making wavelength is λ, λ+Δ λ and λ-this three-beam of Δ λ is irrelevant mutually, the light beam vertical illumination photomask that wherein a branch of wavelength is λ, another Shu Bochang is the light beam x direction biasing illumination light mask of λ+Δ λ and light beam y direction biasing illumination light mask that the three beams wavelength is λ-Δ λ, once finishes exposure by imaging system; Utilize the variable density attenuating light filter, regulate the relative intensity of above-mentioned three-beam λ, λ+Δ λ and λ-Δ λ respectively, improve contrast and resolution; Utilize zero level reference beam optical filter, mask graph low-and high-frequency light strength ratio when regulating x direction, the exposure of y direction is to improve picture contrast and resolution.
The acousto-optic frequency modulation single exposure image interference etching system that utilizes said method to form, comprise that wavelength is the laser instrument of λ, the three beams beam splitter, the acousto-optic frequency modulator, the beam-expanding collimation spatial filter, catoptron, removable catoptron, photomask, imaging system, removable catoptron, the resist silicon chip, the laser that laser instrument sends is divided into through the three beams beam splitter and has certain angle and the approximately equalised three-beam of intensity, wherein a light beam is through placing the beam-expanding collimation spatial filter between three beams beam splitter and the photomask to become directional light vertical illumination photomask, and other two light beams become the light beam that wavelength is λ+Δ λ and λ-Δ λ through separately acousto-optic frequency modulator respectively, become directional light respectively through separately beam-expanding collimation spatial filter again, through separately catoptron and removable catoptron illumination light mask separately; The light beam of illumination light mask produces direct transmitted light and diffraction light through photomask, and diffraction light is imaged onto on the resist silicon chip through imaging system; And through two light beams of the direct transmission of photomask through separately removable catoptron, arrive the resist silicon chip; Also be provided with one in the light path of the three-beam behind the three beams beam splitter separately and be used for regulating respectively the relative intensity of three-beam to improve the variable density attenuating light filter of picture contrast and resolution; In by the reference path behind the two-beam process photomask of acousto-optic frequency modulator frequency modulation, also be provided with a zero level reference beam filter plate separately, be respectively applied for mask graph low-and high-frequency light strength ratio when regulating x direction, the exposure of y direction oblique illumination, to improve picture contrast and resolution.
The three beams beam splitter can be the single beam splitter or the combination beam splitter of partial reflection part transmission, or is diffraction grating, or is binary optical elements, or is holographic optical elements (HOE); The acousto-optic frequency modulator is to be used to change laser frequency and the high conversion efficiency acousto-optical device that do not change the coherence.
The present invention has compared following advantage with existing method and system:
(1) owing to adopts the acousto-optic frequency modulator to change optical maser wavelength, the image interference photoetching that carries out three exposures with same wavelength laser can be become the image interference photoetching of finishing with three wavelength single exposures, also need not adopt three laser instruments to be respectively applied for three exposures, reduce exposure frequency, improve exposure efficiency.This method and system adopts the three beams beam splitter, make light beam be divided into the approximately equalised three-beam that certain angle is arranged of intensity, then in the two-beam light path therein, add that respectively an acousto-optic frequency modulator produces wavelength and moves, acousto-optic frequency modulation efficient height, good beam quality can satisfy the requirement of high-resolution imaging interference lithography.
(2), also reduced the alignment difficulties and the process complexity of figure between three exposures because the present invention adopts single exposure.
(3) the present invention adopts the variable density attentuating filter in three-beam, is convenient to regulate the relative exposure intensity of three-beam.
(4) the present invention is when x, y direction biasing illumination, in the mid-strength ratio of going into zero level reference beam decay optical filter (blade inserting) low-and high-frequency composition when being convenient to regulate the biasing exposure of Zero-order diffractive light path, helps improving image contrast and resolution.
Description of drawings
Fig. 1 is acousto-optic frequency modulation single exposure image interference photoetching method of the present invention and system schematic;
Fig. 2 is three times exposure image interference photoetching methods of the prior art and system schematic.
Embodiment
As shown in Figure 1, acousto-optic frequency modulation image interference etching system of the present invention includes laser instrument 1, three beams beam splitter 2, variable density attenuating light filter 3, acousto-optic frequency modulator 4, beam-expanding collimation spatial filter 5, catoptron 6, removable catoptron 7, photomask 8, zero level decay optical filter 9, imaging system 10, removable catoptron 11, resist silicon chip 12,1. the laser that laser instrument 1 sends is divided into through three beams beam splitter 2 has certain angle and the approximately equalised three-beam of intensity, 2. and 3., three-beam is respectively through behind three variable density attenuating light filters, 1. light beam becomes directional light vertical illumination photomask 8 through beam-expanding collimation spatial filter 5, and 2. and 3. light beam becomes the light that wavelength is λ+Δ λ and λ-Δ λ through acousto-optic frequency modulator 4 respectively, become directional light through beam-expanding collimation spatial filter 5 again, through catoptron 6 and removable catoptron 7 illumination light masks 8; 1. the light beam of illumination light mask is imaged onto on the resist silicon chip 12 through photomask 8 diffraction and imaging system 10; Light beam 2. and 3. behind the mask diffraction, by the high fdrequency component of imaging system with through zero level decay optical filter 9 and removable catoptron 11, and arrive the zero order light interference imaging of resist silicon chip 12.X, y direction offset angle hour, 2. and 3. light beam after the zero order diffracted light behind the photomask 8 is through zero level decay optical filter 9, directly passes through imaging system 10 (need not add removable catoptron 11 in addition) and high fdrequency component interference imaging on resist silicon chip 12.So far, finish photomask 8 under light beam illumination 1., 2. and 3., be imaged onto on the resist silicon chip 12 by imaging system 10.
Variable density attenuating light filter 3 regulate light beams 1., 2., relative intensity 3., the relative intensity of regulating three wavelength pictures; The strength ratio of zero order light and high fdrequency component when zero level decay optical filter 9 is regulated x, y direction biasing illumination, purpose all is to improve contrast, improves photoetching resolution.
Claims (4)
1. acousto-optic frequency modulation single exposure image interference photoetching method is characterized in that comprising the following steps:
(1) adopting the acousto-optic frequency modulator to make from the wavelength of laser instrument output is the laser of λ, frequency modulation is to have two-beam λ+Δ λ and the λ-Δ λ that wavelength difference is Δ λ, making wavelength is that λ, λ+Δ λ and λ-this three-beam of Δ λ are irrelevant mutually, light beam vertical illumination photomask, another Shu Bochang that wherein a branch of wavelength is λ is the light beam * direction biasing illumination light mask of λ+Δ λ and the light beam y direction biasing illumination light mask that the three beams wavelength is λ-Δ λ, once finishes exposure by imaging system;
(2) utilize the variable density attenuating light filter, regulate the relative intensity of above-mentioned three-beam λ, λ+Δ λ and λ-Δ λ respectively, improve contrast and resolution;
(3) utilize zero level reference beam optical filter, mask graph low-and high-frequency light strength ratio when regulating x direction, the exposure of y direction is to improve picture contrast and resolution.
2. acousto-optic frequency modulation single exposure image interference etching system, it is characterized in that: comprise that wavelength is the laser instrument (1) of λ, three beams beam splitter (2), acousto-optic frequency modulator (4), beam-expanding collimation spatial filter (5), catoptron (6), removable catoptron (7), photomask (8), imaging system (10), removable catoptron (11), resist silicon chip (12), the laser that laser instrument (1) sends is divided into through three beams beam splitter (2) and has certain angle and the approximately equalised three-beam of intensity, wherein a light beam is through placing the beam-expanding collimation spatial filter (5) between three beams beam splitter (2) and the photomask (8) to become directional light vertical illumination photomask (8), and other two light beams become the light beam that wavelength is λ+Δ λ and λ-Δ λ through separately acousto-optic frequency modulator (4) respectively, become directional light respectively through separately beam-expanding collimation spatial filter (5) again, through separately catoptron (6) and removable catoptron (7) illumination light mask (8) separately; The light beam of illumination light mask produces direct transmitted light and diffraction light through photomask (8), and diffraction light is imaged onto on the resist silicon chip (12) through imaging system (10); And through photomask (8) directly two light beams of transmission arrive on the resist silicon chip (12) through separately removable catoptron (11); Also be provided with one in the light path of the three-beam behind three beams beam splitter (2) separately and be used for regulating respectively the relative intensity of three-beam to improve the variable density attenuating light filter (3) of picture contrast and resolution; Reference path (R after the two-beam by acousto-optic frequency modulator (4) frequency modulation passes through photomask (8)
xAnd R
y) in also be provided with a zero level reference beam filter plate (9) separately, mask graph low-and high-frequency light strength ratio when being respectively applied for the exposure of adjusting * direction, y direction oblique illumination is to improve picture contrast and resolution.
3. acousto-optic frequency modulation single exposure image interference etching system according to claim 2, it is characterized in that: described three beams beam splitter (2) can be the single beam splitter or the combination beam splitter of partial reflection part transmission, or be diffraction grating, or be binary optical elements, or be holographic optical elements (HOE).
4. acousto-optic frequency modulation single exposure image interference etching system according to claim 2 is characterized in that: described acousto-optic frequency modulator (4) is for being used to change the high conversion efficiency acousto-optical device that laser frequency does not change the coherence.
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| CNB2003101001709A CN100458565C (en) | 2003-10-15 | 2003-10-15 | Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100483256C (en) * | 2005-11-10 | 2009-04-29 | 中国科学院光电技术研究所 | Image interference photoetching method using end acousto-optical deflector and its system |
| CN100483257C (en) * | 2005-11-23 | 2009-04-29 | 中国科学院光电技术研究所 | Method and system for imaging interference photoetching adopting white laser |
| CN102636968A (en) * | 2012-05-08 | 2012-08-15 | 上海理工大学 | Holographic exposure device of any groove grating structure and exposure method thereof |
| CN102707584B (en) * | 2012-06-15 | 2014-03-12 | 杭州士兰明芯科技有限公司 | Double-light-beam exposure system and method for manufacturing photonic crystal mask layer |
| CN102707583A (en) * | 2012-06-15 | 2012-10-03 | 杭州士兰明芯科技有限公司 | Multi-light-beam exposure system and method for manufacturing photonic crystal mask layer |
| CN110007384B (en) * | 2019-03-25 | 2020-06-12 | 中国科学院长春光学精密机械与物理研究所 | Two-dimensional plane holographic grating exposure method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5759744A (en) * | 1995-02-24 | 1998-06-02 | University Of New Mexico | Methods and apparatus for lithography of sparse arrays of sub-micrometer features |
| CN2432001Y (en) * | 2000-06-21 | 2001-05-30 | 中国科学院光电技术研究所 | Laser interference photoetching system |
Non-Patent Citations (1)
| Title |
|---|
| Imaging interferometric lithography: A wavelength divisionmultiplex approach to extending optical lithography. Xiaolan Chen, S.R.J.Brueck.J.Vac.sci.Technol.B,Vol.16 No.6. 1998 * |
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