CN1841729A - 大电流三相整流电力电子器件模块 - Google Patents
大电流三相整流电力电子器件模块 Download PDFInfo
- Publication number
- CN1841729A CN1841729A CNA2005100386879A CN200510038687A CN1841729A CN 1841729 A CN1841729 A CN 1841729A CN A2005100386879 A CNA2005100386879 A CN A2005100386879A CN 200510038687 A CN200510038687 A CN 200510038687A CN 1841729 A CN1841729 A CN 1841729A
- Authority
- CN
- China
- Prior art keywords
- silicon
- soft
- electronic device
- insulating plate
- power electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 23
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 abstract 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 231100000252 nontoxic Toxicity 0.000 abstract 1
- 230000003000 nontoxic effect Effects 0.000 abstract 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000000680 avirulence Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Rectifiers (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100386879A CN100499118C (zh) | 2005-03-28 | 2005-03-28 | 大电流三相整流电力电子器件模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100386879A CN100499118C (zh) | 2005-03-28 | 2005-03-28 | 大电流三相整流电力电子器件模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841729A true CN1841729A (zh) | 2006-10-04 |
CN100499118C CN100499118C (zh) | 2009-06-10 |
Family
ID=37030660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100386879A Active CN100499118C (zh) | 2005-03-28 | 2005-03-28 | 大电流三相整流电力电子器件模块 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100499118C (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101179055B (zh) * | 2007-12-14 | 2010-10-06 | 江苏宏微科技有限公司 | 半导体功率模块及其散热方法 |
CN101630676B (zh) * | 2009-04-02 | 2011-05-11 | 嘉兴斯达微电子有限公司 | 新型直接敷铜基板布局的绝缘栅双极性晶体管模块 |
CN102560488A (zh) * | 2012-02-02 | 2012-07-11 | 天津大学 | 基于纳米银焊膏连接芯片的dbc基板表面处理工艺 |
CN103795272A (zh) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | 一种三相整流桥功率模块 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040227476A1 (en) * | 2002-12-19 | 2004-11-18 | International Rectifier Corp. | Flexible inverter power module for motor drives |
CN2645342Y (zh) * | 2003-10-09 | 2004-09-29 | 秦皇岛晨砻华电科技有限公司 | 高频斩波串级调速控制装置 |
CN2789933Y (zh) * | 2005-03-28 | 2006-06-21 | 陈兴忠 | 大电流三相整流电力电子器件模块 |
-
2005
- 2005-03-28 CN CNB2005100386879A patent/CN100499118C/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101179055B (zh) * | 2007-12-14 | 2010-10-06 | 江苏宏微科技有限公司 | 半导体功率模块及其散热方法 |
CN101630676B (zh) * | 2009-04-02 | 2011-05-11 | 嘉兴斯达微电子有限公司 | 新型直接敷铜基板布局的绝缘栅双极性晶体管模块 |
CN102560488A (zh) * | 2012-02-02 | 2012-07-11 | 天津大学 | 基于纳米银焊膏连接芯片的dbc基板表面处理工艺 |
CN103795272A (zh) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | 一种三相整流桥功率模块 |
Also Published As
Publication number | Publication date |
---|---|
CN100499118C (zh) | 2009-06-10 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Changzhou Ruihua Power Electronic Devices Co., Ltd. Assignor: Chen Xingzhong|Yan Shufang Contract fulfillment period: 2009.6.25 to 2025.3.27 contract change Contract record no.: 2009320001100 Denomination of invention: Heavy current three-phase rectification power electronic device module Granted publication date: 20090610 License type: Exclusive license Record date: 2009.7.13 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.25 TO 2025.3.27; CHANGE OF CONTRACT Name of requester: CHANGZHOU RUNHUA POWER ELECTRONIC DEVICES CO., LTD Effective date: 20090713 |