CN101179055B - 半导体功率模块及其散热方法 - Google Patents

半导体功率模块及其散热方法 Download PDF

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CN101179055B
CN101179055B CN2007101916462A CN200710191646A CN101179055B CN 101179055 B CN101179055 B CN 101179055B CN 2007101916462 A CN2007101916462 A CN 2007101916462A CN 200710191646 A CN200710191646 A CN 200710191646A CN 101179055 B CN101179055 B CN 101179055B
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copper
base
base plate
semiconductor chip
power module
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CN101179055A (zh
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王晓宝
赵善麒
刘利峰
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Macmic Science and Technology Co Ltd
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Jiangsu Macmic Science & Technology Co Ltd
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Abstract

本发明涉及一种半导体功率模块及其散热方法，属于半导体模块制造领域。包括底板、覆金属陶瓷基板、半导体芯片、导电连接件、电极以及壳体，覆金属陶瓷基板连接在底板上，半导体芯片连接在覆金属陶瓷基板或底板上，导电连接件连接半导体芯片和覆金属陶瓷基板，电极与导电连接件或与覆金属陶瓷基板连接，壳体连接在底板上，底板由铜基层和固相复合在铜基层下部的铝基层构成，且铝基层厚度是铜基层厚度的0.5倍以上，在半导体芯片工作中的热量通过底板上部的铜基层快速吸收，再通过固相复合在铜基层下部的铝基层迅速散热。本发明的底板为铜铝复合一体化，能提高半导体模块工作容量，具有节材、体积小、重量轻、成本低的特点，具有极高推广价值。

Description

半导体功率模块及其散热方法
技术领域
本发明涉及一种半导体功率模块及其散热方法，属于半导体模块制造领域。
背景技术
半导体功率模块广泛用于通讯、工业、医疗、家用电器、照明、交通运输、半导体生产设备、军事和航空等领域。主要应用产品类别有各种变频器、斩波器及各种开关电源。如厚膜陶瓷片焊接式半导体功率模块、覆金属陶瓷基板焊接式半导体功率模块、非绝缘式焊接半导体功率模块、压接式半导体功率模块等，均为标准外形尺寸和非标准外形尺寸半导体模块产品，这些半导体模块产品均有一个底板，该底板即可作为固定各半导体芯片或覆金属陶瓷基板、电极以及灌注弹性保护胶和环氧树脂等的载体，而且有时又可作为半导体功率模块的一个导电体。为便于半导体芯片及电极的连接，目前半导体模块的底座均采用铜底板，以利用铜材质的可焊性。众所周知，铜材质与铝材质相比，具有热熔大、比热小、吸热快的特点。半导体功率模块在工作过程中，半导体芯片产生的热量能通过铜底板迅速吸收，但铜底板与铝材相比比热小，热逃逸速度较慢，不能及时将模块内的热量散出，故需将模块安装在散热器上进行散热。但半导体模块安装在散热器上需要有导热硅脂填充模块与散热器之间的空隙，不仅增加了热阻，而且也降低了散热能力。因此在同体积的条件下，无法进一步增加半导体模块的工作容量。另一方面半导体功率模块的底板厚度是随半导体模块底板面积的增大而增厚，增加底板厚度主要解决焊接过程中热应力变形和安装强度要求，因此半导体模块生产数量巨大，需要大量的铜材，而铜材价格不断上涨，使得半导体模块成本也不断增加。
发明内容
本发明的目的是提供一种吸热和散热迅速，且体积小，能增加半导体模块工作容量，降低制造成本的半导体功率模块及其散热方法。
本发明为达到上述目的的技术方案是：一种半导体功率模块，包括底板、覆金属陶瓷基板、半导体芯片、导电连接件、电极以及壳体，覆金属陶瓷基板连接在底板上，半导体芯片连接在覆金属陶瓷基板或底板上，导电连接件连接半导体芯片和覆金属陶瓷基板，电极与导电连接件或与覆金属陶瓷基板连接，壳体连接在底板上，其特征在于：所述的底板由铜基层和固相复合在铜基层下部的铝基层构成，且铝基层厚度是铜基层厚度的0.5倍以上。
本发明半导体功率模块的散热方法，半导体芯片工作中产生的热量通过底板上部的铜基层吸收，再通过固相复合在铜基层下部的铝基层散热。
本发明半导体功率模块的底板采用铜基层和固相复合在铜基层下部的铝基层构成的铜铝复合板，能集铜材和铝材在换热方面的优点，由于铜的导热系数为1386KJ/(M.H.K)，比热为93卡/(千克×℃)，而铝的导热系数为735KJ/(M.H.K)，比热为217卡/(于克×℃)，本发明不仅可利用铜基层的可焊性作为与半导体芯片和覆金属陶瓷基板的焊接载体，而且铜的导热系数是铝的1.9倍，故底板上部的铜基层能瞬间吸收半导体芯片的热量，铜基层通过两金属原子间结合的铜铝层将热量传递给下部的铝基层，且热量的传递过程中铜铝界面没有热阻增加，而铝的比热是铜的2.3倍，铝基层能迅速将铜基层所吸收的热量散发，起到快速散热作用，有效地降低了半导体芯片在长期工作中的热应力，提高了半导体芯片工作可靠性。本发明采用铜铝固相复合底板，因半导体芯片与散热器之间的热阻更小，散热效率大大提高，故在相同半导体模块工作容量，能减小半导体模块体积。而且同样体积的铜其重量是铝的3倍，也大大减少模块的重量，降低成本。可广泛地应用于厚膜陶瓷片焊接式半导体功率模块、DBC基板焊接式半导体功率模块、非绝缘式焊接半导体功率模块、压接式半导体功率模块等。
附图说明
下面结合附图对本发明的实施例作进一步的详细描述。
图1是具有二极管芯片的半导体功率模块结构示意图。
图2是具有绝缘栅双极型晶体管(IGBT)的半导体功率模块结构示意图。
图3是图2去掉壳体的俯视结构示意图。
图4是焊接式晶闸管芯片的半导体功率模块结构示意图。
图5是具有快恢复二极管(FRD)芯片的半导体功率模块示意图。
图6是图5的俯视结构示意图。
其中：1-底板、2-壳体，3-半导体芯片，4-导电连接件，5-覆金属陶瓷基板，6-电极。
具体实施方式
见图1～6所示，本发明的半导体功率模块包括底板1、覆金属陶瓷基板5、半导体芯片3、导电连接件4、电极6以及壳体2，覆金属陶瓷基板5连接在底板1上，半导体芯片3连接在覆金属陶瓷基板5或底板1上，如图2、3所示电极6可通过导电连接件4与半导体芯片3连接。可如图5、6所示，电极6通过导电连接件4与覆金属陶瓷基板5连接，壳体2连接在底板1上，壳体2可粘接在底板1上，或壳体2直接卡接在底板1上，该底板1由铜基层11和固相复合在铜基层11下部的铝基层12构成，本发明的铜基层11和铝基层12是在一定加热温度以及加热速度下压制，铜、铝金属在加热条件下使得原子活化并扩散，并在外力作用下，固态金属的晶格错位而转移产生塑性变形，使两金属接合界面紧密接触接合，实现铜铝两金属固相复合，因此在传热过程中铜铝接合界面没有热阻的增加，达到快速吸热和迅速散热的目的。在相同体积的半导体功率模块下，能提高半导体功率模块的工作容量。本发明铝基层厚度是铜基层厚度的0.5倍以上，一般该铝基层厚度是铜基层厚度的1～100倍，最好铝基层厚度是铜基层厚度的5～15倍，该底板1上的铝基层12可以是固相复合在铜基层11下部的板状层，或铝基层12是由固相复合在铜基层11下部的板状层和沿板状层向下延伸、且相互之间具有空隙的三个以上翅片构成；还可以是铝基层12固相复合在铜基层11下部并向下延伸的三个以上翅片构成。本发明的半导体功率模块通过底部的底板1的铜基层11快速吸收，再通过固相复合在铜基层11下部的铝基层12迅速散热，来提高散热效率。
图1是具有二极管半导体芯片的半导体功率模块的结构，半导体芯片3采用二极管芯片，可用钎焊料将带有上下钼片的半导体芯片3焊接到底板1的固定位置上，再与电极6和导电连接件4焊接，而导电连接件4采用连接桥，通过连接桥将半导体芯片3与电极6连接，其底板1由铜基层11和固相复合在铜基层11下部的铝基层12构成，，铜基层厚度在0.4mm，铝基层厚度在2.8mm；或铜基层厚度在0.4mm，铝基层厚度在40mm；还可以是铜基层厚度在10mm，而铝基层厚度在5mm，可以根据要求设定厚度，壳体2连接在底板1上，底板1与壳体2之间用硅橡胶密封，灌注软弹性胶进行保护半导体芯片。该结构同样也可用于晶闸管芯片焊接在底板1上的半导体功率模块。
图2、3是具有绝缘栅双极型晶体管(IGBT)的半导体功率模块的结构，半导体芯片3采用绝缘栅双极型晶体管芯片，半导体芯片3焊接在覆金属陶瓷基板5上，该覆金属陶瓷基板5采用DBC覆金属陶瓷基板，如Cu-Al2O3(AlN)-Cu直接键合的覆金属陶瓷基板，导电连接件4为粗铝丝，通过粗铝丝键合技术将半导体芯片3的上表面与DBC覆金属陶瓷基板表面电极区连接，而电极6通过导电连接件4即粗铝丝与DBC覆金属陶瓷基板连接，DBC覆金属陶瓷基板与底板1上的铜基层11焊接，铜基层11的下部具有固相复合的铝基层12，铜基层厚度在1mm，铝基层厚度在10mm，或铜基层厚度与铝基层厚度相同，均为10mm，壳体2连接在底板1上，底板1与壳体2之间用硅橡胶密封，灌注软弹性胶进行保护半导体芯片3，半导体芯片3工作中所产生的热量通过底板1上铜基层11导出，而通过铝基层12迅速散出。此类半导体功率模块还有如MOSFET芯片等组成的半导体功率模块。
见图4所示，是焊接式晶闸管半导体芯片的半导体功率模块结构，半导体芯片3采用晶闸管芯片，半导体芯片3焊接在覆金属陶瓷基板5上，导电连接件4采用连接桥，连接桥的一端通过上钼片与半导体芯片3焊接，连接桥另一端与覆金属陶瓷基板5焊接，将半导体芯片3的上表面与覆金属陶瓷基板5表面电极区连接，电极6则与覆金属陶瓷基板5的电极区连接，覆金属陶瓷基板5焊接在底板1的铜基层11上，而铜基层11固相复合有铝基层12，铜基层厚度在5mm，铝基层厚度在15mm，或铜基层厚度在5mm，而铝基层厚度在25mm，壳体2固定在底板1上，底板1与壳体2之间用硅橡胶密封，灌注软弹性胶进行保护半导体芯片3。同样也适用于二极管半导体芯片直接焊接在覆金属陶瓷基板5的结构。
图5、6所示，是快恢复二极管(FRD)芯片的半导体功率模块结构，半导体芯片3采用快恢复二极管(FRD)芯片，半导体芯片3焊接在覆金属陶瓷基板上，该覆金属陶瓷基板5也采用DBC覆金属陶瓷基板，导电连接件4为铝丝，通过铝丝键合技术将半导体芯片3的上表面与覆金属陶瓷基板5表面电极区连接，而电极6通过导电连接件4即铝丝与覆金属陶瓷基板5焊接，覆金属陶瓷基板5与底板1上的铜基层11焊接，铜基层11的下部具有固相复合的铝基层12，铜基层厚度在1mm，而铝基层厚度在15mm，当铝基层12采用翅片结构时，铝基层厚度在50mm，当铝基层厚度在100mm，可达到最佳的散热效果，壳体2连接在底板1上，底板1与壳体2之间用硅橡胶密封，灌注软弹性胶进行保护半导体芯片3，半导体芯片3工作中所产生的热量通过底板1上铜基层11快速吸入，而通过铝基层12迅速散出。此类半导体功率模块还有如MOSFET半导体芯片等组成的半导体功率模块，POWER IC、CPU、数字集成电路组成的半导体模块。
本发明的半导体功率模块由于将铜铝复合一体化，能达到了高效、节材、体积小、重量轻、成本低、具有极高推广价值。

Claims (3)

1.一种半导体功率模块，包括底板(1)、覆金属陶瓷基板(5)、半导体芯片(3)、导电连接件(4)、电极(6)以及壳体(2)，其特征在于：覆金属陶瓷基板(5)连接在底板(1)上，半导体芯片(3)连接在覆金属陶瓷基板(5)或底板(1)上，导电连接件(4)连接半导体芯片(3)和覆金属陶瓷基板(5)，电极(6)与导电连接件(4)连接，壳体(2)连接在底板(1)上，所述的底板(1)由铜基层(11)和固相复合在铜基层(11)下部的铝基层(12)构成，且铝基层厚度是铜基层厚度的5～15倍。
2.根据权利要求1所述的半导体功率模块，其特征在于：所述的铝基层(12)是固相复合在铜基层(11)下部的板状层。
3.一种如权利要求1所述的半导体功率模块的散热方法，其特征在于：半导体芯片直接焊接在底板或通过覆金属陶瓷基板焊接在底板上，工作中的热量通过底板上部的铜基层吸收，再通过固相复合在铜基层下部的铝基层散热。
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