CN1816777B - 提供改良的双层光刻胶图案的方法 - Google Patents

提供改良的双层光刻胶图案的方法 Download PDF

Info

Publication number
CN1816777B
CN1816777B CN2004800192167A CN200480019216A CN1816777B CN 1816777 B CN1816777 B CN 1816777B CN 2004800192167 A CN2004800192167 A CN 2004800192167A CN 200480019216 A CN200480019216 A CN 200480019216A CN 1816777 B CN1816777 B CN 1816777B
Authority
CN
China
Prior art keywords
layer
image layer
top image
oxygen
reducing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2004800192167A
Other languages
English (en)
Chinese (zh)
Other versions
CN1816777A (zh
Inventor
H·肖
H·H·朱
K·-L·唐
S·M·R·萨亚迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1816777A publication Critical patent/CN1816777A/zh
Application granted granted Critical
Publication of CN1816777B publication Critical patent/CN1816777B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
CN2004800192167A 2003-05-09 2004-04-29 提供改良的双层光刻胶图案的方法 Expired - Fee Related CN1816777B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/435,130 2003-05-09
US10/435,130 US7049052B2 (en) 2003-05-09 2003-05-09 Method providing an improved bi-layer photoresist pattern
PCT/US2004/013818 WO2004102277A2 (en) 2003-05-09 2004-04-29 Method providing an improved bi-layer photoresist pattern

Publications (2)

Publication Number Publication Date
CN1816777A CN1816777A (zh) 2006-08-09
CN1816777B true CN1816777B (zh) 2011-06-08

Family

ID=33416877

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800192167A Expired - Fee Related CN1816777B (zh) 2003-05-09 2004-04-29 提供改良的双层光刻胶图案的方法

Country Status (7)

Country Link
US (2) US7049052B2 (https=)
EP (1) EP1623275A2 (https=)
JP (1) JP2007503728A (https=)
KR (2) KR101144019B1 (https=)
CN (1) CN1816777B (https=)
TW (1) TWI348180B (https=)
WO (1) WO2004102277A2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048325B2 (en) * 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US7785753B2 (en) * 2006-05-17 2010-08-31 Lam Research Corporation Method and apparatus for providing mask in semiconductor processing
JP2008085005A (ja) * 2006-09-27 2008-04-10 Elpida Memory Inc 半導体装置の製造方法
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20090208865A1 (en) * 2008-02-19 2009-08-20 International Business Machines Corporation Photolithography focus improvement by reduction of autofocus radiation transmission into substrate
US8753804B2 (en) * 2008-03-11 2014-06-17 Lam Research Corporation Line width roughness improvement with noble gas plasma
KR101355434B1 (ko) 2012-06-12 2014-01-28 한국생산기술연구원 미세 홀이 배열된 폴리머 멤브레인을 포함하는 플라스틱 챔버 플레이트의 제작 방법
US9911620B2 (en) * 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
CN109153690A (zh) * 2016-05-03 2019-01-04 美国陶氏有机硅公司 倍半硅氧烷树脂和甲硅烷基酐组合物
JP7265356B2 (ja) 2016-05-03 2023-04-26 ダウ シリコーンズ コーポレーション シルセスキオキサン樹脂及びオキサアミン組成物
US10643858B2 (en) 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726102A (en) * 1996-06-10 1998-03-10 Vanguard International Semiconductor Corporation Method for controlling etch bias in plasma etch patterning of integrated circuit layers
CN1373899A (zh) * 1999-06-30 2002-10-09 兰姆研究有限公司 改善蚀刻率均匀性的技术

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041361A (en) 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
JPH02172223A (ja) 1988-12-26 1990-07-03 Hitachi Ltd プラズマエッチング装置
US5277749A (en) * 1991-10-17 1994-01-11 International Business Machines Corporation Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
DE19504434C1 (de) 1995-02-10 1996-05-15 Siemens Ag Verfahren zur Herstellung siliziumhaltiger Masken
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
KR100249172B1 (ko) * 1996-10-24 2000-03-15 김영환 감광막 식각방법
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
EP0911697A3 (en) 1997-10-22 1999-09-15 Interuniversitair Microelektronica Centrum Vzw A fluorinated hard mask for micropatterning of polymers
JP2000305273A (ja) * 1998-11-19 2000-11-02 Applied Materials Inc 遠紫外線ドライフォトリソグラフィー
US20010004510A1 (en) * 1998-12-15 2001-06-21 Wheeler David R. Refractory bilayer resist materials for lithography using highly attenuated radiation
KR100477386B1 (ko) * 1999-02-26 2005-03-18 어플라이드 머티어리얼스, 인코포레이티드 심층 자외선 노출용 개선된 건식 사진평판 공정 처리방법
US6153530A (en) * 1999-03-16 2000-11-28 Applied Materials, Inc. Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
DE19919036C1 (de) 1999-04-27 2001-01-11 Bosch Gmbh Robert Ätzmaske und Verfahren zu deren Herstellung
US20010024769A1 (en) * 2000-02-08 2001-09-27 Kevin Donoghue Method for removing photoresist and residues from semiconductor device surfaces
KR100520188B1 (ko) * 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
US6495311B1 (en) * 2000-03-17 2002-12-17 International Business Machines Corporation Bilayer liftoff process for high moment laminate
JP3403374B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6541361B2 (en) * 2001-06-27 2003-04-01 Lam Research Corp. Plasma enhanced method for increasing silicon-containing photoresist selectivity
JP3971603B2 (ja) 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
US6551938B1 (en) * 2002-01-25 2003-04-22 Taiwon Semiconductor Manufacturing Company N2/H2 chemistry for dry development in top surface imaging technology
US6716570B2 (en) * 2002-05-23 2004-04-06 Institute Of Microelectronics Low temperature resist trimming process
EP1609175A1 (en) * 2003-03-31 2005-12-28 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US7226706B2 (en) * 2003-05-20 2007-06-05 Taiwan Semiconductor Manufacturing Company Modification of mask blank to avoid charging effect

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726102A (en) * 1996-06-10 1998-03-10 Vanguard International Semiconductor Corporation Method for controlling etch bias in plasma etch patterning of integrated circuit layers
CN1373899A (zh) * 1999-06-30 2002-10-09 兰姆研究有限公司 改善蚀刻率均匀性的技术

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US 2003/0003756 A1,说明书第【0034】－【0051】、图2.

Also Published As

Publication number Publication date
US7049052B2 (en) 2006-05-23
KR20110073590A (ko) 2011-06-29
US20060166145A1 (en) 2006-07-27
TWI348180B (en) 2011-09-01
JP2007503728A (ja) 2007-02-22
CN1816777A (zh) 2006-08-09
WO2004102277B1 (en) 2005-03-03
KR20060020621A (ko) 2006-03-06
TW200504830A (en) 2005-02-01
EP1623275A2 (en) 2006-02-08
US20040224264A1 (en) 2004-11-11
WO2004102277A3 (en) 2004-12-29
KR101155842B1 (ko) 2012-06-20
KR101144019B1 (ko) 2012-05-11
WO2004102277A2 (en) 2004-11-25

Similar Documents

Publication Publication Date Title
KR101555397B1 (ko) 포토레지스트 마스크 전처리를 갖는 플라즈마 프로세스
US7053003B2 (en) Photoresist conditioning with hydrogen ramping
US7838426B2 (en) Mask trimming
US7785484B2 (en) Mask trimming with ARL etch
CN100543946C (zh) 蚀刻掩模特征临界尺寸的减小
CN102318037A (zh) 利用arc层打开的cd偏置负载控制
CN1816777B (zh) 提供改良的双层光刻胶图案的方法
CN101903978B (zh) 用于注入光刻胶的保护层
CN100487874C (zh) 具有均匀性控制的蚀刻
US20060011578A1 (en) Low-k dielectric etch

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110608

CF01 Termination of patent right due to non-payment of annual fee