CN1815746A - Cmos图像传感器及其制造方法 - Google Patents
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Abstract
本发明提供了一种CMOS图像传感器及其制造方法,用来防止微透镜的上升现象。该CMOS图像传感器包括:半导体衬底结构,其中沉积有至少一个光电二极管;形成在该半导体衬底结构上的绝缘中间层;形成在该绝缘中间层上的图样化的金属层;形成在包括图样化的金属层的绝缘中间层上的氧化层;形成在氧化层上的钝化层;和至少一个与氧化层直接接触形成的微透镜;其中氧化层和钝化层共同被蚀刻,以形成对应至少一个微透镜的多个开口。
Description
本申请要求于2004年12月24日提交的韩国专利申请第10-2004-0112058号的优先权,其全部内容结合于此作为参考。
技术领域
本发明涉及CMOS图像传感器及其制造方法。虽然本发明适于大范围的应用,但尤其适用于用于防止微透镜的上升(lifting)现象的CMOS图像传感器及其制造方法。
背景技术
图像传感器是用于将光学图像转换成电信号的半导体器件,包括电荷耦合器件和互补型金属氧化物(CMOS)图像传感器。一般的电荷耦合器件包括将光信号转换成电信号的光电二极管阵列,但一般的电荷耦合器件的缺陷在于驱动方法复杂、高功耗、以及需要多级照相处理的复杂制造工艺。在电荷耦合器件中,难以将诸如控制电路、信号处理器、以及模数转换器这样的互补电路集成到单芯片器件中。因而,阻碍了紧凑型(薄型)产品的发展,利用这种图像传感器的紧凑型或薄型产品的例子包括数字照相机和数字摄像机。
另一方面,CMOS图像传感器采用了利用控制电路和信号处理电路作为外围电路的CMOS技术,还采用了允许利用与排列的像素的数量对应设置的MOS晶体管顺序检测输出而由此检测图像的开关技术。因此,CMOS图像传感器利用了CMOS制造技术,即,使用更少光刻步骤的简单的制造方法,从而使器件具有低功耗的优点。
在上述的CMOS图像传感器中,通常,光电二极管是通过根据入射光的强度和波长(颜色)产生电信号,基于入射光信号形成光学图像的有源器件。在这种CMOS图像传感器中,每个光电二极管检测入射光,相应的CMOS逻辑电路根据输入波长将所检测到的光转换成电信号,光电二极管的光敏性随着更多光线可以到达光电二极管而增加。在这种情况下,提高的光敏性是由所检测到的光能级的增加所导致,并对应于有源器件的光接收性能。一种提高CMOS图像传感器的光敏性的方式是提高其“填充系数”,即,由光电二极管所占的表面区域与图像传感器的整个表面区域的比值度。通过增加响应入射光的区域(即,感光部分)来提高填充系数。但由于要求有逻辑电路部分,所以限制了增加感光部分。
因此,用具有优异的光透射比的材料制成的诸如具有预定曲率的、用于折射入射光的凸微透镜这样的器件,可被设置用于将入射到图像传感器上的任何光重新导向到光电二极管的紧邻区域外。具有预定曲率的凸微透镜将入射光会聚(聚焦)到一个或多个光电二极管自身上。也就是说,到达微透镜的凸面结构表面且平行于微透镜的光轴的入射光,由微透镜根据凸微透镜的曲率进行折射。该折射使得入射光在沿光轴的预定点处聚焦。微透镜通常由沉积在作为钝化层的氮化层上的光刻胶(photoresist,也称光致抗蚀剂)材料形成,但在微透镜和氮化层之间获得良好的粘附存在着困难。
参看图1,根据相关技术的CMOS图像传感器在半导体衬底结构上构成,该半导体衬底结构包括分开多个光电二极管的一系列外延层,所述多个光电二极管即:分别用于接收用于形成彩色图像的各光信号的红色光电二极管11、绿色光电二极管13、以及蓝色光电二极管15。因此,半导体衬底由其中形成有红色光电二极管11的第一外延层10、形成在包括红色光电二极管11的第一外延层10上的、其中形成有绿色光电二极管13的第二外延层12、以及形成在包括绿色光电二极管13的第二外延层12上的、其中形成有蓝色光电二极管15的第三外延层14构成。浅沟槽隔离区域16形成在第三外延层14中。绝缘中间层17形成在第三外延层14上并被选择性蚀刻,以形成通道18。然后,在绝缘中间层17上形成图样化的金属层。也就是说,通过将沉积在绝缘中间层上的金属层图样化,在绝缘中间层17上形成连接到金属线(未示出)的衬垫21。为了防止器件潮湿和受到微小的外部冲击,在包括衬垫21的绝缘中间层17的上方形成由氧化物形成的第一绝缘层19,在第一绝缘层19上形成由氮化物形成的第二绝缘层20。通过选择性地蚀刻第二和第一绝缘层20和19,露出图样化的金属层的上表面,并且,例如衬垫这样的金属经历了热处理。
每一个都由光刻胶材料形成的多个微透镜22在第二绝缘层20上形成,第二绝缘层作为氮化物的钝化层在第一绝缘层19的氧化物上形成。因此,由于微透镜的光刻胶材料不良或有缺陷地粘附到第二绝缘层20的氮化物上,微透镜22可能变得上升,即,全部或部分未粘附状态的状态。这种上升导致了像素有缺陷和产量降低。而且,各个微透镜在第二绝缘层20的上表面上以预定间隔形成,由此这些微透镜间的间隙也有助于上升现象的产生。
发明内容
因此,本发明旨在提供一种CMOS图像传感器及其制造方法,能基本上消除由于相关技术的限制和缺点造成的一个或多个问题。
本发明的一个目的是提供一种CMOS图像传感器及其制造方法,来防止微透镜变得上升,并因此提高产量。
本发明的另一个目的是提供一种CMOS图像传感器及其制造方法,以便于改善微透镜的粘附。
本发明的另一个目的是提供一种CMOS图像传感器及其制造方法,通过选择性蚀刻作为钝化层的氮化层之后,在氧化层上形成微透镜,来防止微透镜的上升现象。
在以下描述中,本发明另外的特征和优点将部分地得以阐述,对于本领域的普通技术人员,通过该说明部分地将变得显而易见,或可从本发明的实施获得。通过在书面描述中特别指出的结构和方法及其权利要求以及附图,可实现和获得本发明的目的和其它优点。
如本文中所体现和广泛描述的,为了获得与本发明目的一致的这些目标和其它优点,提供了一种CMOS图像传感器,包括:半导体衬底结构,其中沉积有至少一个光电二极管;绝缘中间层,形成在所述半导体衬底结构上;图样化的金属层,形成在所述绝缘中间层上;氧化层,形成在包括所述图样化的金属层的所述绝缘中间层上;钝化层,形成在所述氧化层上;至少一个微透镜,与所述氧化层直接接触形成;其中,所述氧化层和所述钝化层共同被蚀刻,以形成对应所述至少一个微透镜的多个开口。
在本发明的另一方面,提供了一种CMOS图像传感器的制造方法。该方法包括:形成绝缘中间层,所述绝缘中间层在半导体衬底结构上形成,所述半导体衬底结构中沉积了至少一个光电二极管;在所述绝缘中间层上形成图样化的金属层;形成在包括所述图样化的金属层的所述绝缘中间层上形成的氧化层;在所述氧化层上形成钝化层;蚀刻所述氧化层和所述钝化层中的每一层,以形成多个开口;以及在所述多个开口中的至少一个中形成至少一个微透镜,所述微透镜将与所述氧化层直接接触。
应当理解,本发明的上述一般性描述和下述具体描述是示范性和说明性的,目的在于提供对所要求的本发明的进一步的说明。
附图说明
附图、本发明的说明性实施例、以及描述用以说明本发明的原理,其中附图包含进来以提供对本发明的原理进一步的理解,且整合在本申请中并构成本发明的部分。在图中:
图1是相关技术的CMOS图像传感器的剖面图;
图2-图6是图解根据本发明的用于制造CMOS图像传感器的方法的剖面图。
具体实施方式
现在详细参看本发明的优选实施例,其实例在附图中示出。在任何可能的位置,相同的参考标号将在图中自始至终是指相同或相似部分。
参看图2,根据本发明的CMOS图像传感器在包括一系列外延层的半导体衬底结构上被构成,上述外延层分离多个光电二极管,即,分别用于接收用于形成彩色图像的各光信号的红色光电二极管31、绿色光电二极管33、以及蓝色光电二极管35。因此,半导体衬底由其中形成有红色光电二极管31的第一外延层30、形成在包括红色光电二极管31的第一外延层30上的、其中形成有绿色光电二极管33的第二外延层32、以及形成在包括绿色光电二极管33的第二外延层32上的、其中形成有蓝色光电二极管35的第三外延层34构成。浅沟槽隔离区域36形成在第三外延层34中。
参看图3,绝缘中间层37形成在第三外延层34上并被选择性蚀刻,以形成通道38,在其上方上形成图样化的金属层。也就是说,通过将沉积在被蚀刻的绝缘中间层37a上的金属层图样化,在被蚀刻的绝缘层上形成连接到金属线(未示出)的衬垫41,由此填充通道38。为了防止器件潮湿和受到微小的外部冲击,在包括衬垫41的被蚀刻的绝缘中间层37a的上方形成氧化物的第一绝缘层39,并在第一绝缘层39上形成氮化物的第二绝缘层40。通过用光刻胶涂布第二绝缘层40并对光刻胶执行曝光和显影处理(光刻),形成用于打开微透镜形成区和衬垫形成区的光刻胶图样42。通过在对应于要在微透镜之间设置的壁的图样中形成一厚度,光刻胶图样42的形成确定微透镜形成之间的分隔(间隔)。
参看图4,利用光刻胶图样42作为掩模,第二和第一绝缘层40和39被选择性地蚀刻,由此形成与衬垫形成区对应的第一开口43和与微透镜形成区对应的第二开口44。第一开口43露出衬垫41的上表面,第二开口44具有由第一绝缘层39的材料形成的底表面,使得用于形成微透镜的光刻胶材料与氧化层(即,被蚀刻的第一绝缘层39a)而不是氮化层(即,被蚀刻的第二绝缘层40a)直接接触。
参看图5,被蚀刻的第二绝缘层40a涂布有光刻胶,该光刻胶被选择性地曝光和显影,以形成与第二开口44对应的微透镜图样45。此处,微透镜图样45填充第二开口44,并具有可与第二绝缘层40的上表面齐平或可在该上表面上方延伸的顶侧。
参看图6,通过对微透镜图样45进行热处理和烧结处理,形成微透镜46。通过用于打开衬垫41的图样化的相同步骤建立的微透镜间的壁确定了各个微透镜46之间的距离,因此,这些微透镜被凹进以进一步防止上升。
通过采用根据上述的本发明的CMOS图像传感器及其制造方法,在选择性蚀刻氮化物钝化层后,微透镜直接形成在下面的氧化层上,从而通过改善微透镜对下层的粘附防止微透镜的上升并防止产生有缺陷的像素,由此提高了产量。而且,由于通过同时对微透镜图样进行热处理和烧结处理,由此获得了简化的工艺。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同更换、改进等,均应包含在本发明的保护范围之内。
Claims (16)
1.一种CMOS图像传感器,包括:
半导体衬底结构,其中设置有至少一个光电二极管;
绝缘中间层,形成在所述半导体衬底结构上;
图样化的金属层,形成在所述绝缘中间层上;
氧化层,形成在包括所述图样化的金属层的所述绝缘中间层上;
钝化层,形成在所述氧化层上;以及
至少一个微透镜,与所述氧化层直接接触形成;
其中,所述氧化层和所述钝化层共同被蚀刻,以形成对应所述至少一个微透镜的多个开口。
2.根据权利要求1所述的CMOS图像传感器,其中,所述钝化层由氮化物形成。
3.根据权利要求1所述的CMOS图像传感器,其中,所述图样化的金属层具有暴露的上表面。
4.根据权利要求3所述的CMOS图像传感器,其中,形成在所述所述氧化层和所述钝化层中的所述多个开口包括对应所述图样化的金属层的所述暴露的上表面的开口。
5.根据权利要求1所述的CMOS图像传感器,其中,所述多个开口是通过共同蚀刻所述氧化层和所述钝化层中的每层形成的。
6.根据权利要求1所述的CMOS图像传感器,其中,形成在所述氧化层和所述钝化层中的所述多个开口包括至少一个第一开口和至少一个第二开口,所述第一开口露出所述图样化的金属层的上表面,所述第二开口具有由所述氧化层形成的底表面。
7.根据权利要求1所述的CMOS图像传感器,其中,所述至少一个微透镜在形成于所述氧化层和所述钝化层中的所述多个开口中的至少一个开口中形成。
8.根据权利要求1所述的CMOS图像传感器,其中,所述至少一个微透镜具有粘附到所述氧化层的下表面。
9.根据权利要求1所述的CMOS图像传感器,其中,所述半导体衬底结构包括:
在第一外延层中形成的红色光电二极管;
在第二外延层中形成的绿色光电二极管;以及
在第三外延层中形成的蓝色光电二极管;
其中,所述第二外延层在包括所述红色光电二极管的所述第一外延层上形成,且其中所述第三外延层在包括所述绿色光电二极管的所述第二外延层上形成。
10.一种用于制造CMOS图像传感器的方法,包括:
形成绝缘中间层,所述绝缘中间层在其中设置有至少一个光电二极管的半导体衬底结构上形成;
在所述绝缘中间层上形成图样化的金属层;
形成氧化层,所述氧化层在包括所述图样化的金属层的所述绝缘中间层上形成;
在所述氧化层上形成钝化层;
蚀刻所述氧化层和所述钝化层中的每一层,以形成多个开口;以及
在所述多个开口中的至少一个中形成至少一个微透镜,所述微透镜将与所述氧化层直接接触。
11.根据权利要求10所述的方法,其中,所述钝化层由氮化物形成。
12.根据权利要求10所述的方法,其中,所述图样化的金属层具有暴露的上表面。
13.根据权利要求12所述的方法,其中,形成在所述氧化层和所述钝化层中的多个开口包括与所述图样化的金属层的所述暴露的上表面对应的开口。
14.根据权利要求10所述的方法,其中,形成在所述氧化层和所述钝化层中的所述多个开口包括与所述至少一个微透镜对应的开口。
15.根据权利要求10所述的方法,其中,通过共同蚀刻所述氧化层和所述钝化层中的每一层形成所述多个开口。
16.根据权利要求10所述的方法,其中,所述微透镜的形成包括:
形成对应于所述多个开口的光刻胶图样;以及
对所述光刻胶图样同时执行热处理和烧结处理,从而形成所述至少一个微透镜。
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