JP4153426B2 - 集積イメージセンサを製造するための方法 - Google Patents
集積イメージセンサを製造するための方法 Download PDFInfo
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- JP4153426B2 JP4153426B2 JP2003529531A JP2003529531A JP4153426B2 JP 4153426 B2 JP4153426 B2 JP 4153426B2 JP 2003529531 A JP2003529531 A JP 2003529531A JP 2003529531 A JP2003529531 A JP 2003529531A JP 4153426 B2 JP4153426 B2 JP 4153426B2
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- 238000000034 method Methods 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011159 matrix material Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 8
- 238000001465 metallisation Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 102100039955 Gem-associated protein 6 Human genes 0.000 description 1
- 101000926140 Homo sapiens Gem-associated protein 2 Proteins 0.000 description 1
- 101000886614 Homo sapiens Gem-associated protein 6 Proteins 0.000 description 1
- 101000716750 Homo sapiens Protein SCAF11 Proteins 0.000 description 1
- 101000723833 Homo sapiens Zinc finger E-box-binding homeobox 2 Proteins 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 102100020876 Protein SCAF11 Human genes 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
−接合を覆う厚さ約0.1ないし0.2μの第1の絶縁層IS1、
−その層の上に、第1の多結晶性シリコン層SIP1が堆積されて成る厚さ約0.3μの電荷転送ゲートまたはトランジスタゲート、
−厚さ約0.1ないし0.2μの第2の絶縁層IS2、
−厚さ約0.3μの第2の多結晶性シリコン層SIP2、
−厚さ約1μの第3の絶縁層IS3、
−厚さ0.6μの第1の導電性金属(アルミニウム)層M1、
−厚さ約1μの第4の絶縁層IS4、
−厚さ約0.6μの第2の導電層M2。
Claims (6)
- 半導体基板上の第1領域(MP)に感光マトリックスを、第2領域(ZE)に周辺回路を有する集積イメージセンサを製造するための方法であって、
該半導体基板上に複数の導電層と平坦化層として機能する透明な絶縁層とを連続的に交互に前記基板全面に堆積し個々のパターンにエッチングする工程であって最後に導電層たる金属化段(M2)を堆積しエッチングすることを有する工程である第1ステップと、
第1ステップの後、前記基板上の全面に対して少なくとも1層の絶縁平坦化層を堆積する第2ステップと、
次いで、さらなる導電層の堆積及びエッチングとさらなる絶縁平坦化層の堆積及びエッチングとを交互に行う工程であって、該さらなる導電層のエッチングにおいては堆積された該さらなる導電層を第1領域(MP)において全面的に除去しながら第2領域のみにその一部を残留させる第3ステップと、
第2領域(ZE)上をマスクで保護して、第3ステップで堆積された前記さらなる絶縁平坦化層と少なくとも一部の第2ステップで堆積された絶縁平坦化層とのうち第1領域(MP)の上方に位置するものを、第1ステップにおいて堆積された前記金属化段が露出されるまである厚さ分均一に除去しながら第2領域(ZE)上に位置するものを残留させる第4ステップ、とを有する方法。 - 除去される絶縁体の厚さが、除去過程の時点で前記半導体基板上に位置する絶縁体の厚さの30%以上に相当することを特徴とする請求項1に記載の方法。
- 除去される絶縁体の厚さが、除去過程の時点で前記半導体基板上に位置する絶縁体の厚さの50%以上に相当することを特徴とする請求項2に記載の方法。
- 第4ステップの後に、さらにカラーフィルタのモザイクが配置されるステップを有することを特徴とする請求項1ないし3のいずれか一項に記載の方法。
- 第4ステップのあとにさらに透明な絶縁平坦化層を堆積する第5ステップを有する請求項1ないし3のいずれか一項に記載の方法。
- 第5ステップの後にさらにカラーフィルタのモザイクが配置される第6のステップを有することを特徴とする請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0111938A FR2829875B1 (fr) | 2001-09-14 | 2001-09-14 | Capteur d'image avec creusement des couches de planarisation et procede de fabrication |
PCT/FR2002/003079 WO2003026016A2 (fr) | 2001-09-14 | 2002-09-10 | Capteur d'image avec creusement des couches de planarisation et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005503674A JP2005503674A (ja) | 2005-02-03 |
JP4153426B2 true JP4153426B2 (ja) | 2008-09-24 |
Family
ID=8867308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003529531A Expired - Fee Related JP4153426B2 (ja) | 2001-09-14 | 2002-09-10 | 集積イメージセンサを製造するための方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7109054B2 (ja) |
EP (1) | EP1425800B1 (ja) |
JP (1) | JP4153426B2 (ja) |
CN (1) | CN100413079C (ja) |
AU (1) | AU2002347235A1 (ja) |
CA (1) | CA2460394C (ja) |
DE (1) | DE60216780T2 (ja) |
FR (1) | FR2829875B1 (ja) |
IL (2) | IL160705A0 (ja) |
WO (1) | WO2003026016A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3709873B2 (ja) * | 2003-02-19 | 2005-10-26 | ソニー株式会社 | 固体撮像装置及び撮像カメラ |
KR100719341B1 (ko) * | 2005-01-25 | 2007-05-17 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
KR100807214B1 (ko) * | 2005-02-14 | 2008-03-03 | 삼성전자주식회사 | 향상된 감도를 갖는 이미지 센서 및 그 제조 방법 |
KR100640982B1 (ko) * | 2005-10-11 | 2006-11-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 테스트 패턴 및 이를 이용한공정관리 측정방법 |
FR2895566B1 (fr) | 2005-12-23 | 2008-04-18 | Atmel Grenoble Soc Par Actions | Capteur d'image aminci a plots de contact isoles par tranchee |
KR100790288B1 (ko) * | 2006-08-31 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2010273757A (ja) * | 2009-05-27 | 2010-12-09 | Zycube:Kk | イメージセンサ応用装置 |
DE102011116409B3 (de) | 2011-10-19 | 2013-03-07 | Austriamicrosystems Ag | Verfahren zur Herstellung dünner Halbleiterbauelemente |
US9143673B2 (en) * | 2012-09-19 | 2015-09-22 | Google Inc. | Imaging device with a plurality of pixel arrays |
CN108963015B (zh) * | 2017-05-17 | 2021-12-10 | 上海耕岩智能科技有限公司 | 一种光侦测薄膜、器件、显示装置、光敏二极管的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6316659A (ja) * | 1986-07-09 | 1988-01-23 | Fuji Photo Film Co Ltd | 固体撮像装置 |
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
JPH08186241A (ja) * | 1995-01-06 | 1996-07-16 | Canon Inc | 撮像素子と固体撮像装置 |
US6297071B1 (en) * | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
US6373117B1 (en) * | 1999-05-03 | 2002-04-16 | Agilent Technologies, Inc. | Stacked multiple photosensor structure including independent electrical connections to each photosensor |
-
2001
- 2001-09-14 FR FR0111938A patent/FR2829875B1/fr not_active Expired - Fee Related
-
2002
- 2002-09-10 EP EP02783154A patent/EP1425800B1/fr not_active Expired - Lifetime
- 2002-09-10 WO PCT/FR2002/003079 patent/WO2003026016A2/fr active IP Right Grant
- 2002-09-10 JP JP2003529531A patent/JP4153426B2/ja not_active Expired - Fee Related
- 2002-09-10 CN CNB02818064XA patent/CN100413079C/zh not_active Expired - Fee Related
- 2002-09-10 AU AU2002347235A patent/AU2002347235A1/en not_active Abandoned
- 2002-09-10 CA CA2460394A patent/CA2460394C/fr not_active Expired - Fee Related
- 2002-09-10 IL IL16070502A patent/IL160705A0/xx unknown
- 2002-09-10 US US10/488,942 patent/US7109054B2/en not_active Expired - Lifetime
- 2002-09-10 DE DE60216780T patent/DE60216780T2/de not_active Expired - Lifetime
-
2004
- 2004-03-03 IL IL160705A patent/IL160705A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IL160705A0 (en) | 2004-08-31 |
EP1425800A2 (fr) | 2004-06-09 |
DE60216780T2 (de) | 2007-11-15 |
JP2005503674A (ja) | 2005-02-03 |
AU2002347235A1 (en) | 2003-04-01 |
CN100413079C (zh) | 2008-08-20 |
EP1425800B1 (fr) | 2006-12-13 |
US7109054B2 (en) | 2006-09-19 |
CA2460394C (fr) | 2012-05-22 |
DE60216780D1 (de) | 2007-01-25 |
IL160705A (en) | 2009-07-20 |
FR2829875A1 (fr) | 2003-03-21 |
CN1555578A (zh) | 2004-12-15 |
WO2003026016A2 (fr) | 2003-03-27 |
WO2003026016A3 (fr) | 2004-02-19 |
FR2829875B1 (fr) | 2004-01-02 |
US20040241899A1 (en) | 2004-12-02 |
CA2460394A1 (fr) | 2003-03-27 |
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