CN1790633A - Anti-reflection layer of sandwich structure and method for improving conductor layer coronary fault - Google Patents
Anti-reflection layer of sandwich structure and method for improving conductor layer coronary fault Download PDFInfo
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- CN1790633A CN1790633A CN 200410101484 CN200410101484A CN1790633A CN 1790633 A CN1790633 A CN 1790633A CN 200410101484 CN200410101484 CN 200410101484 CN 200410101484 A CN200410101484 A CN 200410101484A CN 1790633 A CN1790633 A CN 1790633A
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Abstract
The anti-reflection layer with sandwich structure comprises: a first metal-nitride layer with a second metal-nitride layer, and a metal layer between two metal-nitride layers. This invention can prevent the galvanic corrosion and improve the coronary defect.
Description
Technical field
The present invention relates to a kind of anti-reflecting layer and improve the method for conductor layer electrical property efficiency, and particularly relevant for a kind of anti-reflecting layer of sandwich structure and improve the method for the coronary fault of conductor layer.
Background technology
Along with the processing procedure live width is more and more narrow, make the degree of difficulty of micro-photographing process increase thereupon, this is because after the live width reduction, and the situation of aligning mistake takes place easily.Especially when the definition conductor layer, because the reflection coefficient of conductor layer (reflectivity index) is big than dielectric layer or insulating barrier on every side usually, when causing definition photoresist layer pattern, exposure light source reflects on the conductor layer surface easily, cause the photoresist layer dimensional discrepancy, cause little shadow design transfer incorrect.For preventing that the above-mentioned error carried from occurring, can on conductor layer, make one deck anti-reflecting layer (anti-reflective coating, ARC), to reach the effect of reduction reflectivity.
Yet employed developer solution is generally highly basic in developing manufacture process, because silicon nitride anti-reflecting layer crystal grain is arranged as column, can makes developer solution pass anti-reflecting layer the conductor layer under it is produced destruction.Wherein, when conductor layer is metals such as aluminium, modal destruction is exactly that the phenomenon that anti-reflecting layer makes aluminium copper generation dc etching (galvanic corrosion) is passed in the developer solution infiltration, the aluminium that reduction potential is lower will be dissolved by electrolysis, and makes conductor layer produce coronary fault (crown-like defects).Thus, except meeting makes production capacity cause damage, more can make the phenomenon that produces the bridge joint short circuit between adjacent lead because of coronary fault.This situation, easier seeing in the heavy industry processing procedure.
A kind of method is arranged in the known technology, be the generation that suppresses coronary fault with the thickness that increases the silicon nitride anti-reflecting layer, but this mode can make resistance value increase.
Summary of the invention
Purpose of the present invention is exactly that a kind of anti-reflecting layer of sandwich structure is being provided, and preventing the generation of coronary fault in the conductor layer, and then improves the phenomenon of bridge joint short circuit between adjacent wires.
A further object of the present invention provides a kind of method of improving the coronary fault of conductor layer, can effectively suppress the generation of coronary fault in the conductor layer, and then prevents that production capacity from reducing.
The present invention proposes a kind of anti-reflecting layer of sandwich structure, comprises one first nitrided metal layer, one second nitrided metal layer and a metal level.Wherein, second nitrided metal layer is to be disposed on first nitrided metal layer.Metal level then is disposed between first nitrided metal layer and second nitrided metal layer.
According to the anti-reflecting layer of the described sandwich structure of preferred embodiment of the present invention, described first nitrided metal layer is identical with the material of second nitrided metal layer, for example is titanium nitride or tantalum nitride.In addition, metal material contained in the material of metal level and first nitrided metal layer is the same, for example is titanium or tantalum.Wherein, the anti-reflecting layer thickness of sandwich structure is between 300 dusts～750 dusts.In addition, metal layer thickness is between 5 dusts～100 dusts.
The present invention proposes a kind of method of improving the coronary fault of conductor layer in addition, and a conductor layer at first is provided, and forms one first nitrided metal layer again on conductor layer.Then, on first nitrided metal layer, form a metal level.Then, on metal level, form one second nitrided metal layer.
According to the described method of improving the coronary fault of conductor layer of preferred embodiment of the present invention, the method that wherein forms first nitrided metal layer and second nitrided metal layer for example be reactive sputtering method or Metalorganic chemical vapor deposition method (metal organic chemical vapor deposition, MOCVD).In addition, the method that forms this metal level for example is a sputtering method.
According to the described method of improving the coronary fault of conductor layer of preferred embodiment of the present invention, the first above-mentioned nitrided metal layer, metal level and second nitrided metal layer can be chosen in the same reative cell and carry out.Wherein, the method that forms first nitrided metal layer and second nitrided metal layer for example is reactive sputtering method.In addition, the method for formation metal level for example is a sputtering method.
The present invention is that the anti-reflecting layer for the sandwich structure of metal stops developer solution to penetrate in the middle of utilizing, and makes that conductor layer under the anti-reflecting layer is unlikely to be subjected to the destruction of developer solution and to produce dissolving.On the other hand, the anti-reflecting layer of sandwich structure also can effectively prevent the infiltration of rinse water in the heavy industry processing procedure, makes that conductor layer under it is unlikely to be subjected to the destruction of developer solution and to produce dissolving.Thus, can improve coronary fault takes place in the conductor layer, and then prevent the phenomenon of bridge joint short circuit between adjacent wires, and effectively improve the situation that production capacity reduces.In addition, the method for improving the coronary fault of conductor layer need not to buy in addition other machinery equipment, can be integrated directly in the manufacture of semiconductor.And in the method for the coronary fault that improves conductor layer, each rete of the anti-reflecting layer of sandwich structure can form in same reative cell, can simplify manufacturing process.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the flow chart that illustrates the method for the coronary fault that improves conductor layer in a preferred embodiment of the present invention.
Fig. 2 is the profile that illustrates the anti-reflecting layer of sandwich structure in another preferred embodiment of the present invention.
Symbol description
200: the semiconductor-based end 202: conductor layer
204,208: nitrided metal layer 206: metal level
210: anti-reflecting layer S102, S104, S106, S108: step numbers
Embodiment
Fig. 1 is the flow chart of steps that illustrates the coronary fault that improves conductor layer in a preferred embodiment of the present invention.Below be to describe, a conductor layer (as step S102) at first is provided according to Fig. 1.Wherein, the material of conductor layer for example is conducting metals such as aluminium.
Then, on conductor layer, form one first nitrided metal layer (as step S104) again.Wherein, the material of first nitrided metal layer for example is titanium nitride or tantalum nitride, and the method that forms for example is a physical vaporous deposition, as reactive sputtering method, or chemical vapour deposition technique, as organic metallochemistry vapour deposition process.
Then, on first nitrided metal layer, form a metal level (as step S106).Wherein, the material of metal level for example is titanium or tantalum, and the thickness that forms is for example between 5 dusts～100 dusts, and the method that forms for example is a sputtering method.
Afterwards, on metal level, form one second nitrided metal layer (as step S108).Wherein, the material of second nitrided metal layer for example is titanium nitride or tantalum nitride, and the method for formation for example is a physical vaporous deposition, as reactive sputtering method, or chemical vapour deposition technique, as organic metallochemistry vapour deposition process.The first above-mentioned nitrided metal layer, metal level and the second metal nitride layer stack form the anti-reflecting layer of sandwich structure of the present invention, and the thickness of the anti-reflecting layer of this sandwich structure is for example between 300 dusts～750 dusts.
In one example, first nitrided metal layer is identical with the material of second nitrided metal layer, for example is titanium nitride or tantalum nitride.In addition, the material of metal level can be the same with contained metal material in first, second nitrided metal layer, for example is titanium or tantalum.
In another preferred embodiment, the step (as step S104, S106, S108) that forms first nitrided metal layer, metal level and second nitrided metal layer is carried out in same reative cell, to simplify manufacturing process.And the formation method of first nitrided metal layer and second nitrided metal layer for example is the reactive sputtering method in the physical vaporous deposition, and the formation method of metal level for example is the sputtering method in the physical vaporous deposition.
The above-mentioned method of improving the coronary fault of conductor layer, it is the anti-reflecting layer that utilizes the sandwich structure of first nitrided metal layer, metal level and the storehouse formation of second nitrided metal layer institute, can in developing manufacture process, stop developer solution and the rinse water conductor layer under penetrating into, the coronary fault that improves in the conductor layer to be taken place.On the other hand, because the method for the foregoing description can be integrated directly in the manufacture of semiconductor, so need not to buy other machinery equipment.Next, will the anti-reflecting layer of this sandwich structure be described.
Fig. 2 is the profile that illustrates the anti-reflecting layer of sandwich structure in another preferred embodiment of the present invention.Please refer to Fig. 2, the anti-reflecting layer 210 of sandwich structure comprises a nitrided metal layer 204, metal level 206 and another nitrided metal layer 208.And the anti-reflecting layer 210 of sandwich structure is to be disposed at at the semiconductor-based end 200 with conductor layer 202.In addition, nitrided metal layer 204 and 208 material for example are titanium nitride or tantalum nitride, and the material of conductor layer 202 for example is an aluminium.In addition, metal level 206 is to be disposed between nitrided metal layer 204 and the nitrided metal layer 208, and its material for example is titanium or tantalum, and formed thickness for example is between 5 dusts～100 dusts.In a further example, nitrided metal layer 204 is identical with the material of nitrided metal layer 208, for example is titanium nitride or tantalum nitride, and contained metal material is the same in the material of metal level 206 and the nitrided metal layer 204,208, for example is titanium or tantalum.
Above-mentioned nitrided metal layer 204, metal level 206 and nitrided metal layer 208 are to form as the TiN/Ti/TiN or the anti-reflecting layer 210 of the sandwich structure of TaN/Ti/TaN, and its thickness for example is between 350 dusts～700 dusts.Wherein, in the anti-reflecting layer 210 of sandwich structure because metal level 206 arranged, so can effectively stop the intrusion of developer solution in the developing manufacture process, prevent developer solution to the caused dc etching of the erosion of conductor layer 202, and cause conductor layer 202 that coronary fault takes place.
In sum, the present invention has following characteristics at least:
1. the anti-reflecting layer of sandwich structure proposed by the invention can effectively prevent the coronary fault that developer solution attack metal conductor layer is caused, to improve the situation that production capacity reduces.
2. the anti-reflecting layer of sandwich structure proposed by the invention can effectively suppress the coronary fault that rinse water causes dc etching that metal conductor layer produced, takes place with the phenomenon that prevents bridge joint short circuit between adjacent wires.
3. the present invention improves in the method for coronary fault of conductor layer, and each rete of the anti-reflecting layer of sandwich structure is to form in same reative cell, can simplify manufacturing process.
4. the present invention's method of improving the coronary fault of conductor layer can be integrated directly in the manufacture of semiconductor, need not to buy in addition other machinery equipment.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; anyly have the knack of this operator; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion of being defined in the claim according to the present invention.
Claims (20)
1. the anti-reflecting layer of a sandwich structure is characterized in that: comprising:
One first nitrided metal layer;
One second nitrided metal layer is disposed on first nitrided metal layer; And
One metal level is disposed between this first nitrided metal layer and this second nitrided metal layer.
2. the anti-reflecting layer of sandwich structure as claimed in claim 1, it is characterized in that: this first nitrided metal layer is identical with the material of second nitrided metal layer.
3. the anti-reflecting layer of sandwich structure as claimed in claim 2 is characterized in that: metal material contained in the material of this metal level and first nitrided metal layer is the same.
4. the anti-reflecting layer of sandwich structure as claimed in claim 3, it is characterized in that: the material of this metal level comprises titanium or tantalum.
5. the anti-reflecting layer of sandwich structure as claimed in claim 1 or 2, it is characterized in that: the material of this first nitrided metal layer and second nitrided metal layer comprises titanium nitride or tantalum nitride.
6. the anti-reflecting layer of sandwich structure as claimed in claim 1, it is characterized in that: the material of this metal level comprises titanium or tantalum.
7. the anti-reflecting layer of sandwich structure as claimed in claim 1, it is characterized in that: its thickness is between 300 dusts～750 dusts.
8. the anti-reflecting layer of sandwich structure as claimed in claim 1, it is characterized in that: this metal layer thickness is between 5 dusts～100 dusts.
9. method of improving the coronary fault of conductor layer is characterized in that: comprising:
(a) provide a conductor layer;
(b) on this conductor layer, form one first nitrided metal layer;
(c) on this first nitrided metal layer, form a metal level; And
(d) on this metal level, form one second nitrided metal layer.
10. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: described step (b), (c) be in same reative cell, to carry out (d).
11. the method for improving the coronary fault of conductor layer as claimed in claim 10 is characterized in that: the method that forms first nitrided metal layer and second nitrided metal layer comprises reactive sputtering method.
12. the method for improving the coronary fault of conductor layer as claimed in claim 10 is characterized in that: the method that forms metal level comprises sputtering method.
13. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: the method that forms this first nitrided metal layer and this second nitrided metal layer comprises reactive sputtering method.
14. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: the method that forms this first nitrided metal layer and this second nitrided metal layer comprises the organometallic chemistry vapour deposition process.
15. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: the method that forms metal level comprises sputtering method.
16. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: this first nitrided metal layer is identical with the material of this second nitrided metal layer.
17. the method for improving the coronary fault of conductor layer as claimed in claim 16 is characterized in that: metal material contained in the material of this metal level and this first nitrided metal layer is the same.
18. the method for improving the coronary fault of conductor layer as claimed in claim 17 is characterized in that: the material of this metal level comprises titanium or tantalum.
19. as claim 9 or the 16 described methods of improving the coronary fault of conductor layer, it is characterized in that: the material of this first nitrided metal layer and second nitrided metal layer comprises titanium nitride or tantalum nitride.
20. the method for improving the coronary fault of conductor layer as claimed in claim 9 is characterized in that: the material of this metal level comprises titanium or tantalum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410101484 CN1790633A (en) | 2004-12-16 | 2004-12-16 | Anti-reflection layer of sandwich structure and method for improving conductor layer coronary fault |
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| CN 200410101484 CN1790633A (en) | 2004-12-16 | 2004-12-16 | Anti-reflection layer of sandwich structure and method for improving conductor layer coronary fault |
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| CN1790633A true CN1790633A (en) | 2006-06-21 |
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| CN 200410101484 Pending CN1790633A (en) | 2004-12-16 | 2004-12-16 | Anti-reflection layer of sandwich structure and method for improving conductor layer coronary fault |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926743A (en) * | 2014-03-24 | 2014-07-16 | 京东方科技集团股份有限公司 | Color film substrate, manufacturing method thereof, and display device |
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2004
- 2004-12-16 CN CN 200410101484 patent/CN1790633A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103926743A (en) * | 2014-03-24 | 2014-07-16 | 京东方科技集团股份有限公司 | Color film substrate, manufacturing method thereof, and display device |
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Open date: 20060621 |