CN1917167A - Method of fabricating metal plug, and contact window - Google Patents
Method of fabricating metal plug, and contact window Download PDFInfo
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- CN1917167A CN1917167A CN 200510092134 CN200510092134A CN1917167A CN 1917167 A CN1917167 A CN 1917167A CN 200510092134 CN200510092134 CN 200510092134 CN 200510092134 A CN200510092134 A CN 200510092134A CN 1917167 A CN1917167 A CN 1917167A
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- manufacture method
- heat treatment
- temperature heat
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- contact hole
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Abstract
The method includes steps: providing a substrate with at least one opening being already prepared; next, forming a barrier layer on surface of the opening, and forming a metal layer on substrate to fill in the opening; then, carrying out an evenness procedure to remove metal layer outside the opening. Characters of the invention are that at least one procedure of high heat treatment is carried out after a metal layer is formed on the substrate. The said procedure of high heat treatment eliminates inner stress between different films and lowers impedance value of metal plug.
Description
Technical field
The present invention relates to a kind of manufacture method of metal interconnecting, relate in particular to the manufacture method of a kind of metal plug (metalplug) and contact hole.
Background technology
Along with semiconductor element continues microminiaturized development, develop various high speeds and multi-functional VLSI (very large scale integrated circuit) chip.But, because the microminiaturization of semiconductor element causes the increase of integrated level, make the intraconnections number constantly increase, and cause chip surface can't provide enough surface areas to hold increasing intraconnections.In order to solve this problem, multi-metal intra-connection structure just is suggested, and become ic manufacturing technology the mode that must take.
And the most frequently used metal plug of industry is to use the tungsten plug that chemical vapour deposition technique is made now.Because this connector has preferable step coverage, high-melting-point and can received conductive capability, so only need to form contact window or interlayer hole opening with dry-etching earlier, can insert in the opening.
But also can dwindle, so how to avoid the resistance value increase of metal plug to become one of present problem demanding prompt solution along with dwindling of element because of the size of metal plug.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of metal plug to improve the internal stress between material, is beneficial to subsequent technique, and then reduces the resistance value of metal plug.
A further object of the present invention provides a kind of manufacture method of contact hole, can reduce the generation probability of lockhole in the contact hole (key hole), to promote the reliability of conductance and increase element.
The present invention proposes a kind of manufacture method of metal plug, and being provides a substrate earlier, and substrate has at least one opening.Afterwards, form a barrier layer, on substrate, form a metal level again and fill up opening in open surfaces.Then, metal level is carried out a flatening process, to remove opening metal level in addition.Feature of the present invention is to form after the metal level on substrate, carries out one high-temperature heat treatment at least.
According to the manufacture method of the described metal plug of the preferred embodiments of the present invention, the technological temperature of above-mentioned high-temperature heat treatment is between 400 ℃～780 ℃.In addition, after being provided, substrate carries out another road high-temperature heat treatment with before open surfaces forms barrier layer, also can comprising above-mentioned.And, on be set forth in open surfaces and form behind the barrier layer with on substrate, forming and also can comprise before the metal level and carry out another road high-temperature heat treatment.
According to the manufacture method of the described metal plug of the preferred embodiments of the present invention, above-mentioned high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
Manufacture method according to the described metal plug of the preferred embodiments of the present invention, on be set forth in step that open surfaces forms barrier layer and comprise prior to open surfaces and form a titanium coating, form the titanium nitride layer again on titanium coating, wherein the material of metal level for example is a tungsten.
The present invention also provides a kind of manufacture method of contact hole, comprise that a. provides a substrate, b. to form a contact window, d. form a barrier layer, e. form a metal level and fill up contact window and the f. planarization metal layer on substrate in contact window in dielectric layer in forming a dielectric layer, c. on the substrate, in contact window, to form a contact hole, wherein after aforementioned e step, need carry out a high-temperature heat treatment at least.
According to the manufacture method of the described contact hole of the preferred embodiments of the present invention, the technological temperature of above-mentioned high-temperature heat treatment is between 400 ℃～780 ℃.Moreover, after a step with before the b step, also can comprise and carry out another road high-temperature heat treatment.And, also can comprise and carry out another road high-temperature heat treatment after the above-mentioned b step with before the c step.
According to the manufacture method of the described contact hole of the preferred embodiments of the present invention, above-mentioned high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
Manufacture method according to the described contact hole of the preferred embodiments of the present invention, on be set forth in the step that forms barrier layer in the contact window and comprise prior to the contact window surface and form a titanium coating, form the titanium nitride layer again on titanium coating, wherein the material of metal level for example is a tungsten.
Because the present invention carries out one high-temperature heat treatment after forming metal level and fill up contact window on substrate at least, so can reduce under the heat budget prerequisite, reduce difference row and defect concentration, adjust internal stress simultaneously, with the electrical performance of the intensity, density and the connector that strengthen material.In addition, the present invention also can reduce the formation probability of lockhole in the connector (key hole) by high-temperature heat treatment, and then improves the conductance of connector.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the making process step figure according to the metal plug of a preferred embodiment of the present invention;
Fig. 2 A to Fig. 2 D is the manufacturing process profile according to the contact hole of another preferred embodiment of the present invention.
The main element symbol description
100～160: step
200: substrate
202: dielectric layer
204: contact window
206: barrier layer
208: metal level
208a: contact hole
210: high-temperature heat treatment
Embodiment
Fig. 1 is the making process step figure according to the metal plug of one embodiment of the present invention.
Please refer to Fig. 1, the method for present embodiment can be applicable to multi-metal intra-connection technology or other need form in the semiconductor structure of metal plug kenel, for example element such as ditching type capacitor.And the metal plug manufacture method of present embodiment normally carry out step 100 earlier, and a substrate is provided, and substrate has at least one opening.And substrate can comprise a silicon wafer, for example has been formed with a dielectric layer in silicon wafer top, as metal intermetallic dielectric layer (Inter-Metal Dielectric, IMD) or interlayer dielectric layer (Inter-layerDielectric, ILD).Moreover aforementioned opening normally utilizes dry-etching to form.
Then, carry out step 110, form a barrier layer in open surfaces.And the formation of barrier layer for example is to form a titanium coating prior to open surfaces, forms the titanium nitride layer again on titanium coating.And the method that forms titanium coating and titanium nitride layer is to utilize nitridation reaction method, reactive sputtering method or Metalorganic Chemical Vapor Deposition (MOCVD) mostly.
Then, in step 120, on substrate, form a metal level and fill up opening.Wherein, the material of metal level can be aluminium or tungsten, is preferably tungsten.And the method that forms metal level for example is a chemical vapour deposition technique.
Then, in step 130a, carry out a high-temperature heat treatment,, and improve the internal stress between metal level and the barrier layer so that the metal level grain size tends to consistent, the more smooth densification in surface.Wherein, the technological temperature of high-temperature heat treatment between 400 ℃～780 ℃, and this high-temperature heat treatment for example be hot boiler tube processing, annealing or rapid thermal annealing (Rapid Thermal Annealing, RTA).
Then, in step 140, metal level is carried out a flatening process, to remove opening metal level in addition, wherein flatening process for example comprises chemical mechanical polishing method.
In addition, after step 140, also can carry out step 130b again, so that the more smooth densification of layer on surface of metal, in order to the deposition of follow-up material layers.In a word, after step 120, carry out at least one high-temperature heat treatment and will splendid benefit be arranged metal level.
In addition, if in step 100 with adding high-temperature heat treatment (that is step 140) between the step 110, then open bottom will tend to consistent with the grain size of sidewall, and the surface can more smooth densification, in order to the deposition of follow-up material layers.And in step 110 with also can adding high-temperature heat treatment (that is step 160) between the step 120, so that barrier layer grain size trend is consistent.
In addition, the present invention also can be applicable in the technology of contact hole, shown in Fig. 2 A to Fig. 2 D.
Fig. 2 A to Fig. 2 D is the manufacturing process profile according to the contact hole of another preferred embodiment of the present invention, and only illustrates high-temperature heat treatment of the present invention in Fig. 1 C, gives unnecessary details avoiding.
Please refer to Fig. 2 A, a substrate 200 is provided earlier, on substrate 200, form a dielectric layer 202 again.Afterwards, can carry out one high-temperature heat treatment, or directly carry out the technology of next figure.
Then, please refer to Fig. 2 B, in dielectric layer 202, form a contact window 204, in contact window 204, form a barrier layer 206 again.The step that wherein forms barrier layer 206 in contact window 204 for example is to form a titanium coating 209 prior to contact window 204 surfaces, forms titanium nitride layer 207 again on titanium coating 209.Afterwards, can carry out one high-temperature heat treatment, or directly carry out the technology of next figure.
Afterwards, please refer to Fig. 2 C, form a metal level 208 and fill up contact window 204 on substrate 200, the method that wherein forms metal level 208 for example comprises chemical vapour deposition technique, and the material of metal level 208 then for example is a tungsten.Afterwards, must carry out high-temperature heat treatment 210 one, so that consistent, the more smooth densification in surface of metal level 207 grain sizes trend, and improve internal stress between metal level 208 and the barrier layer 206, the generation probability of lockhole in the metal plug is reduced, and then reduce resistance value and increase the reliability of element.
Subsequently, please refer to Fig. 2 D, planarization metal layer 208, to form a contact hole 208a in contact window 204, wherein the method for planarization metal layer 208 for example comprises chemical mechanical polishing method.Afterwards, also can add one high-temperature heat treatment at this moment.
In sum, the present invention has following characteristics at least:
1. the present invention carries out one time high-temperature heat treatment at least after metal level forms in forming the metal plug step, so that reduce difference row and defect concentration in each material, carries out and obtains the good electrical sex expression in order to subsequent technique.
2. in addition, the high-temperature heat treatment among the present invention can also be improved the generation probability of lockhole in the metal plug, and then reduces resistance value and increase the reliability of element.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (26)
1. the manufacture method of a metal plug comprises:
One substrate is provided, and this substrate has at least one opening;
Form a barrier layer in this open surfaces;
On this substrate, form a metal level and fill up this opening; And
This metal level is carried out a flatening process, removing this metal level beyond this opening,
Wherein, on this substrate, form after this metal level, carry out one first high-temperature heat treatment at least.
2. the manufacture method of metal plug as claimed in claim 1, wherein the technological temperature of this high-temperature heat treatment is between 400 ℃～780 ℃.
3. the manufacture method of metal plug as claimed in claim 1, wherein this first high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
4. the manufacture method of metal plug as claimed in claim 1, wherein this first high-temperature heat treatment is included in and forms this metal level on this substrate and fill up after this opening and to this metal level and carry out carrying out before this flatening process.
5. the manufacture method of metal plug as claimed in claim 1, wherein this first high-temperature heat treatment comprises this metal level is carried out carrying out after this flatening process.
6. the manufacture method of metal plug as claimed in claim 1 wherein provides after this substrate and before this open surfaces forms this barrier layer, also comprises and carries out one second high-temperature heat treatment.
7. the manufacture method of metal plug as claimed in claim 6, wherein this second high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
8. the manufacture method of metal plug as claimed in claim 1 wherein after this open surfaces forms this barrier layer and before forming this metal level on this substrate, also comprises and carries out one the 3rd high-temperature heat treatment.
9. the manufacture method of metal plug as claimed in claim 8, wherein the 3rd high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
10. the manufacture method of metal plug as claimed in claim 1 wherein comprises in the step that this open surfaces forms this barrier layer:
Form a titanium coating in this open surfaces; And
On this titanium coating, form the titanium nitride layer.
11. the manufacture method of metal plug as claimed in claim 1, the method that wherein forms this metal level comprises chemical vapour deposition technique.
12. the manufacture method of metal plug as claimed in claim 11, wherein the material of this metal level comprises tungsten.
13. the manufacture method of metal plug as claimed in claim 1, wherein this flatening process comprises chemical mechanical polishing method.
14. the manufacture method of a contact hole comprises:
A., one substrate is provided;
B. on this substrate, form a dielectric layer;
C. in this dielectric layer, form a contact window;
D. in this contact window, form a barrier layer;
E. on this substrate, form a metal level and fill up this contact window; And
F. this metal level of planarization to form a contact hole in this contact window, wherein carries out one first high-temperature heat treatment at least after aforementioned e step.
15. the manufacture method of contact hole as claimed in claim 14, wherein the technological temperature of this first high-temperature heat treatment is between 400 ℃～780 ℃.
16. the manufacture method of contact hole as claimed in claim 14, wherein this first high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
17. the manufacture method of contact hole as claimed in claim 14, wherein this first high-temperature heat treatment is included in after the step e and before the step f and carries out.
18. the manufacture method of contact hole as claimed in claim 14, wherein this first high-temperature heat treatment is carried out after being included in step f.
19. the manufacture method of contact hole as claimed in claim 14 wherein also comprises between c step and d step and carries out one second high-temperature heat treatment.
20. the manufacture method of contact hole as claimed in claim 19, wherein this second high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
21. the manufacture method of contact hole as claimed in claim 14 wherein also comprises between d step and e step and carries out one the 3rd high-temperature heat treatment.
22. the manufacture method of contact hole as claimed in claim 21, wherein the 3rd high-temperature heat treatment comprises hot boiler tube processing, annealing process or rapid thermal anneal process.
23. the manufacture method of contact hole as claimed in claim 14, the step that wherein forms this barrier layer in this contact window comprises:
Form a titanium coating in this contact window surface; And
On this titanium coating, form the titanium nitride layer.
24. the manufacture method of contact hole as claimed in claim 14, the method that wherein forms this metal level on this substrate comprises chemical vapour deposition technique.
25. the manufacture method of contact hole as claimed in claim 24, wherein the material of this metal level comprises tungsten.
26. the manufacture method of contact hole as claimed in claim 14, wherein the method for this metal level of planarization comprises chemical mechanical polishing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510092134 CN1917167A (en) | 2005-08-19 | 2005-08-19 | Method of fabricating metal plug, and contact window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510092134 CN1917167A (en) | 2005-08-19 | 2005-08-19 | Method of fabricating metal plug, and contact window |
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| Publication Number | Publication Date |
|---|---|
| CN1917167A true CN1917167A (en) | 2007-02-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510092134 Pending CN1917167A (en) | 2005-08-19 | 2005-08-19 | Method of fabricating metal plug, and contact window |
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| CN (1) | CN1917167A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740479B (en) * | 2008-11-14 | 2012-10-31 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing semiconductor device |
| CN101996931B (en) * | 2009-08-20 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor device |
| CN106158728A (en) * | 2015-04-03 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole thromboembolism |
| CN108615705A (en) * | 2018-04-25 | 2018-10-02 | 武汉新芯集成电路制造有限公司 | The manufacturing method of contact plunger |
-
2005
- 2005-08-19 CN CN 200510092134 patent/CN1917167A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740479B (en) * | 2008-11-14 | 2012-10-31 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing semiconductor device |
| CN101996931B (en) * | 2009-08-20 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor device |
| CN106158728A (en) * | 2015-04-03 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole thromboembolism |
| CN106158728B (en) * | 2015-04-03 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | The forming method of contact hole embolism |
| CN108615705A (en) * | 2018-04-25 | 2018-10-02 | 武汉新芯集成电路制造有限公司 | The manufacturing method of contact plunger |
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