CN1776932A - 薄膜晶体管和包括该薄膜晶体管的平板显示器 - Google Patents
薄膜晶体管和包括该薄膜晶体管的平板显示器 Download PDFInfo
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- CN1776932A CN1776932A CNA2005101267716A CN200510126771A CN1776932A CN 1776932 A CN1776932 A CN 1776932A CN A2005101267716 A CNA2005101267716 A CN A2005101267716A CN 200510126771 A CN200510126771 A CN 200510126771A CN 1776932 A CN1776932 A CN 1776932A
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040094908A KR100647660B1 (ko) | 2004-11-19 | 2004-11-19 | 박막 트랜지스터 및 이를 채용한 평판표시장치 |
KR1020040094908 | 2004-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1776932A true CN1776932A (zh) | 2006-05-24 |
Family
ID=36582758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2005101267716A Pending CN1776932A (zh) | 2004-11-19 | 2005-11-18 | 薄膜晶体管和包括该薄膜晶体管的平板显示器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7381984B2 (zh) |
JP (1) | JP4504908B2 (zh) |
KR (1) | KR100647660B1 (zh) |
CN (1) | CN1776932A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8440502B2 (en) | 2008-11-07 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100667935B1 (ko) * | 2004-11-23 | 2007-01-11 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 그 제조방법 및 유기 박막트랜지스터를 구비한 평판 표시 장치 |
US7719496B2 (en) | 2004-11-23 | 2010-05-18 | Samsung Mobile Display Co., Ltd. | Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor |
KR100647683B1 (ko) * | 2005-03-08 | 2006-11-23 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치 |
KR100719548B1 (ko) * | 2005-03-24 | 2007-05-17 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치 |
KR100786498B1 (ko) * | 2005-09-27 | 2007-12-17 | 삼성에스디아이 주식회사 | 투명박막 트랜지스터 및 그 제조방법 |
KR101244898B1 (ko) | 2006-06-28 | 2013-03-19 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 기판 및 그 제조 방법 |
KR100761085B1 (ko) * | 2006-11-10 | 2007-09-21 | 삼성에스디아이 주식회사 | 유기박막트랜지스터, 이의 제조방법 및 이를 포함하는유기전계발광소자 |
KR100807558B1 (ko) * | 2006-11-10 | 2008-02-28 | 삼성에스디아이 주식회사 | 유기박막트랜지스터, 이의 제조방법 및 이를 포함하는유기전계발광소자 |
US20080111131A1 (en) * | 2006-11-10 | 2008-05-15 | Nam-Choul Yang | Organic thin film transistor, method of fabricating the same, and display device including the same |
KR100781953B1 (ko) * | 2006-12-29 | 2007-12-06 | 전자부품연구원 | 유기 박막 트랜지스터 및 그 제조방법 |
JP5007246B2 (ja) * | 2008-01-31 | 2012-08-22 | 三菱電機株式会社 | 有機電界発光型表示装置及びその製造方法 |
KR20090124527A (ko) * | 2008-05-30 | 2009-12-03 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
TWI476931B (zh) * | 2010-10-21 | 2015-03-11 | Au Optronics Corp | 薄膜電晶體與具有此薄膜電晶體的畫素結構 |
KR101810045B1 (ko) * | 2010-10-25 | 2017-12-19 | 삼성디스플레이 주식회사 | 헤테로고리 화합물 및 이를 포함한 유기 발광 소자 |
KR101885696B1 (ko) * | 2011-05-09 | 2018-09-11 | 삼성디스플레이 주식회사 | 헤테로고리 화합물, 이를 포함한 유기 전계 발광 소자 및 상기 유기 전계 발광 소자를 포함하는 평판 표시 장치 |
KR20130050713A (ko) * | 2011-11-08 | 2013-05-16 | 삼성디스플레이 주식회사 | 유기 발광 소자, 이의 제조 방법 및 이를 포함하는 평판 표시 장치 |
CN103503190B (zh) * | 2012-04-27 | 2016-08-24 | 株式会社日本有机雷特显示器 | 有机el元件和具备该元件的有机el面板、有机el发光装置、有机el显示装置 |
KR101695350B1 (ko) * | 2012-08-01 | 2017-01-13 | 삼성디스플레이 주식회사 | 헤테로고리 화합물 및 이를 포함하는 유기 발광 소자 |
KR102059939B1 (ko) * | 2013-02-14 | 2019-12-30 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함한 유기 발광 소자 |
JP6264090B2 (ja) * | 2013-07-31 | 2018-01-24 | 株式会社リコー | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
KR102124045B1 (ko) * | 2014-05-02 | 2020-06-18 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
JP6103390B2 (ja) * | 2014-12-24 | 2017-03-29 | パナソニックIpマネジメント株式会社 | 有機発光デバイスおよび有機表示装置 |
KR102369299B1 (ko) * | 2014-12-31 | 2022-03-03 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함한 유기 발광 소자 |
KR102332593B1 (ko) * | 2015-02-05 | 2021-11-30 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함하는 유기 발광 소자 |
CN104701466B (zh) * | 2015-03-25 | 2018-09-04 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法和显示装置 |
KR102527223B1 (ko) * | 2015-08-21 | 2023-05-02 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함하는 유기 발광 소자 |
KR20170101128A (ko) * | 2016-02-26 | 2017-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
US10741769B2 (en) * | 2016-10-14 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device |
KR101891168B1 (ko) * | 2016-10-31 | 2018-08-23 | 엘지디스플레이 주식회사 | 유기 화합물과 이를 포함하는 유기발광다이오드 및 유기발광 표시장치 |
KR102448032B1 (ko) * | 2017-08-01 | 2022-09-28 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함한 전자 장치 |
KR102169568B1 (ko) * | 2018-12-21 | 2020-10-23 | 엘지디스플레이 주식회사 | 유기 발광 소자 |
KR20200091979A (ko) * | 2019-01-23 | 2020-08-03 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
KR20210114601A (ko) * | 2020-03-10 | 2021-09-24 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 전자 장치 |
KR20210137305A (ko) * | 2020-05-07 | 2021-11-17 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함한 전자 장치 |
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JP2002098948A (ja) | 2000-09-20 | 2002-04-05 | Hitachi Ltd | 液晶表示装置の製造方法 |
JP2002204012A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 有機トランジスタ及びその製造方法 |
JP3823312B2 (ja) * | 2001-10-18 | 2006-09-20 | 日本電気株式会社 | 有機薄膜トランジスタ |
KR100453162B1 (ko) | 2001-12-29 | 2004-10-15 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
US7208756B2 (en) * | 2004-08-10 | 2007-04-24 | Ishiang Shih | Organic semiconductor devices having low contact resistance |
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2004
- 2004-11-19 KR KR1020040094908A patent/KR100647660B1/ko active IP Right Grant
-
2005
- 2005-11-02 JP JP2005320068A patent/JP4504908B2/ja active Active
- 2005-11-15 US US11/280,761 patent/US7381984B2/en active Active
- 2005-11-18 CN CNA2005101267716A patent/CN1776932A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8440502B2 (en) | 2008-11-07 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
CN101740398B (zh) * | 2008-11-07 | 2016-02-03 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
Also Published As
Publication number | Publication date |
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JP2006148094A (ja) | 2006-06-08 |
KR100647660B1 (ko) | 2006-11-23 |
KR20060055762A (ko) | 2006-05-24 |
US20060124924A1 (en) | 2006-06-15 |
JP4504908B2 (ja) | 2010-07-14 |
US7381984B2 (en) | 2008-06-03 |
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