CN1770485A - 铟镓铝氮发光器件 - Google Patents
铟镓铝氮发光器件 Download PDFInfo
- Publication number
- CN1770485A CN1770485A CNA2005100303202A CN200510030320A CN1770485A CN 1770485 A CN1770485 A CN 1770485A CN A2005100303202 A CNA2005100303202 A CN A2005100303202A CN 200510030320 A CN200510030320 A CN 200510030320A CN 1770485 A CN1770485 A CN 1770485A
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- Prior art keywords
- lead
- layer
- vacancy
- laminated
- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 238000003475 lamination Methods 0.000 description 20
- 239000004020 conductor Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 235000019788 craving Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
Claims (10)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303202A CN1331245C (zh) | 2005-09-30 | 2005-09-30 | 铟镓铝氮发光器件 |
PCT/CN2006/002582 WO2007036162A1 (fr) | 2005-09-30 | 2006-09-29 | Dispositif electroluminescent a semi-conducteur |
EP06791168A EP1930956A1 (en) | 2005-09-30 | 2006-09-29 | Semiconductor light-emitting device |
JP2008532570A JP2009510728A (ja) | 2005-09-30 | 2006-09-29 | 半導体発光デバイス |
US12/067,767 US7692205B2 (en) | 2005-09-30 | 2006-09-29 | Semiconductor light-emitting device |
KR1020087006916A KR20080049749A (ko) | 2005-09-30 | 2006-09-29 | 반도체 발광 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303202A CN1331245C (zh) | 2005-09-30 | 2005-09-30 | 铟镓铝氮发光器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1770485A true CN1770485A (zh) | 2006-05-10 |
CN1331245C CN1331245C (zh) | 2007-08-08 |
Family
ID=36751609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100303202A Expired - Fee Related CN1331245C (zh) | 2005-09-30 | 2005-09-30 | 铟镓铝氮发光器件 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7692205B2 (zh) |
EP (1) | EP1930956A1 (zh) |
JP (1) | JP2009510728A (zh) |
KR (1) | KR20080049749A (zh) |
CN (1) | CN1331245C (zh) |
WO (1) | WO2007036162A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265515A (zh) * | 2019-06-20 | 2019-09-20 | 合肥彩虹蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
KR20090131351A (ko) * | 2008-06-18 | 2009-12-29 | 주식회사 에피밸리 | 반도체 발광소자 |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267715A (ja) * | 1992-03-24 | 1993-10-15 | Toshiba Corp | 半導体発光装置 |
US5828684A (en) * | 1995-12-29 | 1998-10-27 | Xerox Corporation | Dual polarization quantum well laser in the 200 to 600 nanometers range |
JPH09205225A (ja) * | 1996-03-25 | 1997-08-05 | Rohm Co Ltd | 発光半導体装置の製造方法 |
JPH114020A (ja) * | 1997-04-15 | 1999-01-06 | Toshiba Corp | 半導体発光素子及びその製造方法、並びに半導体発光装置 |
US6597713B2 (en) * | 1998-07-22 | 2003-07-22 | Canon Kabushiki Kaisha | Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same |
JP2001144321A (ja) * | 1999-11-04 | 2001-05-25 | Shurai Kagi Kofun Yugenkoshi | 発光素子及びその製造方法 |
US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
TW456058B (en) * | 2000-08-10 | 2001-09-21 | United Epitaxy Co Ltd | Light emitting diode and the manufacturing method thereof |
US6429460B1 (en) * | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
JP4048056B2 (ja) * | 2002-01-15 | 2008-02-13 | シャープ株式会社 | 半導体発光素子及びその製造方法 |
JP4004378B2 (ja) * | 2002-10-24 | 2007-11-07 | ローム株式会社 | 半導体発光素子 |
KR100495215B1 (ko) * | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
JP4254266B2 (ja) * | 2003-02-20 | 2009-04-15 | 豊田合成株式会社 | 発光装置及び発光装置の製造方法 |
JP4411871B2 (ja) * | 2003-06-17 | 2010-02-10 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
-
2005
- 2005-09-30 CN CNB2005100303202A patent/CN1331245C/zh not_active Expired - Fee Related
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2006
- 2006-09-29 KR KR1020087006916A patent/KR20080049749A/ko active IP Right Grant
- 2006-09-29 WO PCT/CN2006/002582 patent/WO2007036162A1/zh active Application Filing
- 2006-09-29 JP JP2008532570A patent/JP2009510728A/ja active Pending
- 2006-09-29 EP EP06791168A patent/EP1930956A1/en not_active Withdrawn
- 2006-09-29 US US12/067,767 patent/US7692205B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110265515A (zh) * | 2019-06-20 | 2019-09-20 | 合肥彩虹蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
Also Published As
Publication number | Publication date |
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KR20080049749A (ko) | 2008-06-04 |
JP2009510728A (ja) | 2009-03-12 |
WO2007036162A1 (fr) | 2007-04-05 |
US20080246048A1 (en) | 2008-10-09 |
EP1930956A1 (en) | 2008-06-11 |
US7692205B2 (en) | 2010-04-06 |
CN1331245C (zh) | 2007-08-08 |
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