CN1769549A - Monocrystalline silicon buffing sheet heat treatment process - Google Patents
Monocrystalline silicon buffing sheet heat treatment process Download PDFInfo
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- CN1769549A CN1769549A CN 200410088609 CN200410088609A CN1769549A CN 1769549 A CN1769549 A CN 1769549A CN 200410088609 CN200410088609 CN 200410088609 CN 200410088609 A CN200410088609 A CN 200410088609A CN 1769549 A CN1769549 A CN 1769549A
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- Prior art keywords
- oxygen
- silicon chip
- annealing
- oxygen precipitation
- silicon
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims description 42
- 230000008569 process Effects 0.000 title claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 89
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000001301 oxygen Substances 0.000 claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 64
- 238000001556 precipitation Methods 0.000 claims description 57
- 238000000137 annealing Methods 0.000 claims description 56
- 238000007669 thermal treatment Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000010923 batch production Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract 4
- 238000006213 oxygenation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 238000003776 cleavage reaction Methods 0.000 description 8
- 230000007017 scission Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000006911 nucleation Effects 0.000 description 7
- 238000010899 nucleation Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Quick thermal treatment process | 1200 ℃, at NH 3Insulation 30s cooling rate is 70 ℃/s under the atmosphere | |||
Oxidation annealing process | Do not handle | Under 900 ℃, N 2/O 2Atmosphere, O 2Content is 50% insulation 15 minutes | Under 900 ℃, N
2/O
2Atmosphere, O
2Content is 50% | Under 900 ℃, N 2/O 2Atmosphere, O 2Content is 50% insulation 45 minutes |
The oxygen precipitation forming core technology of growing up | 800℃ 1000℃ | Be incubated insulation in 4 | ||
Interstitial oxygen content (ppma) | 18.6 | 18.6 | 18.6 | 18.6 |
Oxygen precipitation density is (individual/cm 2) | 6×10 6 | 6×10 6 | 9×10 6 | 9×10 6 |
Clean area thickness (μ m) | | 10 | 14 | 20 |
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100886095A CN100338270C (en) | 2004-11-05 | 2004-11-05 | Monocrystalline silicon buffing sheet heat treatment process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100886095A CN100338270C (en) | 2004-11-05 | 2004-11-05 | Monocrystalline silicon buffing sheet heat treatment process |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1769549A true CN1769549A (en) | 2006-05-10 |
CN100338270C CN100338270C (en) | 2007-09-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100886095A Active CN100338270C (en) | 2004-11-05 | 2004-11-05 | Monocrystalline silicon buffing sheet heat treatment process |
Country Status (1)
Country | Link |
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CN (1) | CN100338270C (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102168314A (en) * | 2011-03-23 | 2011-08-31 | 浙江大学 | Internal gettering process of Czochralski silicon wafer |
CN102995125A (en) * | 2012-10-12 | 2013-03-27 | 孙新利 | Heat treatment process of semiconductor silicon wafer |
WO2013082831A1 (en) * | 2011-12-06 | 2013-06-13 | 有研半导体材料股份有限公司 | 300mm polished silicon wafer manufacturing process by high temperature heat treatment |
CN105297140A (en) * | 2015-09-10 | 2016-02-03 | 上海超硅半导体有限公司 | Silicon chip and annealing treatment method |
CN105470129A (en) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | Method for eliminating impact on minority carrier diffusion length from thermal donor |
CN106255663A (en) * | 2014-05-07 | 2016-12-21 | 信越化学工业株式会社 | Polycrystalline silicon rod, the manufacture method of polycrystalline silicon rod and monocrystal silicon |
CN106920746A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving silicon chip surface microdefect |
CN107148681A (en) * | 2015-01-05 | 2017-09-08 | 信越化学工业株式会社 | The manufacture method of substrate used for solar batteries and substrate used for solar batteries |
CN109137068A (en) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | A kind of method for annealing of monocrystalline silicon piece |
CN109346433A (en) * | 2018-09-26 | 2019-02-15 | 上海新傲科技股份有限公司 | The bonding method of semiconductor substrate and the semiconductor substrate after bonding |
CN113793800A (en) * | 2021-08-18 | 2021-12-14 | 万华化学集团电子材料有限公司 | Impurity removal process and manufacturing process of semiconductor monocrystalline silicon wafer |
CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1029694C (en) * | 1993-05-22 | 1995-09-06 | 浙江大学 | Heat treating method of straightly pulled monocrystalline silicon in nitrogen-containing atmosphere |
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
-
2004
- 2004-11-05 CN CNB2004100886095A patent/CN100338270C/en active Active
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102168314B (en) * | 2011-03-23 | 2012-05-30 | 浙江大学 | Internal gettering process of Czochralski silicon wafer |
WO2012126334A1 (en) * | 2011-03-23 | 2012-09-27 | 浙江大学 | Process for inner absorption of impurities in czochralski silicon wafer |
US8466043B2 (en) | 2011-03-23 | 2013-06-18 | Zhejiang University | Process of internal gettering for Czochralski silicon wafer |
CN102168314A (en) * | 2011-03-23 | 2011-08-31 | 浙江大学 | Internal gettering process of Czochralski silicon wafer |
WO2013082831A1 (en) * | 2011-12-06 | 2013-06-13 | 有研半导体材料股份有限公司 | 300mm polished silicon wafer manufacturing process by high temperature heat treatment |
CN102995125A (en) * | 2012-10-12 | 2013-03-27 | 孙新利 | Heat treatment process of semiconductor silicon wafer |
CN102995125B (en) * | 2012-10-12 | 2015-06-24 | 浙江中晶科技股份有限公司 | Heat treatment process of semiconductor silicon wafer |
US10865498B2 (en) | 2014-05-07 | 2020-12-15 | Shin-Etsu Chemical Co., Ltd. | Polycrystalline silicon rod, method for producing polycrystalline silicon rod, and single-crystalline silicon |
CN106255663A (en) * | 2014-05-07 | 2016-12-21 | 信越化学工业株式会社 | Polycrystalline silicon rod, the manufacture method of polycrystalline silicon rod and monocrystal silicon |
CN107148681A (en) * | 2015-01-05 | 2017-09-08 | 信越化学工业株式会社 | The manufacture method of substrate used for solar batteries and substrate used for solar batteries |
US11901475B2 (en) | 2015-01-05 | 2024-02-13 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing substrate for solar cell and substrate for solar cell |
CN105297140B (en) * | 2015-09-10 | 2019-10-25 | 上海超硅半导体有限公司 | Silicon wafer and annealing method |
CN105297140A (en) * | 2015-09-10 | 2016-02-03 | 上海超硅半导体有限公司 | Silicon chip and annealing treatment method |
CN105470129B (en) * | 2015-12-01 | 2018-10-16 | 北京北方华创微电子装备有限公司 | A method of eliminating oxygen Thermal donor influences minority diffusion length |
CN105470129A (en) * | 2015-12-01 | 2016-04-06 | 北京七星华创电子股份有限公司 | Method for eliminating impact on minority carrier diffusion length from thermal donor |
CN106920746A (en) * | 2015-12-25 | 2017-07-04 | 有研半导体材料有限公司 | A kind of method for improving silicon chip surface microdefect |
CN109137068A (en) * | 2018-08-09 | 2019-01-04 | 锦州神工半导体股份有限公司 | A kind of method for annealing of monocrystalline silicon piece |
CN109137068B (en) * | 2018-08-09 | 2020-10-16 | 锦州神工半导体股份有限公司 | Annealing method of monocrystalline silicon wafer |
CN109346433A (en) * | 2018-09-26 | 2019-02-15 | 上海新傲科技股份有限公司 | The bonding method of semiconductor substrate and the semiconductor substrate after bonding |
CN109346433B (en) * | 2018-09-26 | 2020-10-23 | 上海新傲科技股份有限公司 | Method for bonding semiconductor substrate and bonded semiconductor substrate |
CN113793800A (en) * | 2021-08-18 | 2021-12-14 | 万华化学集团电子材料有限公司 | Impurity removal process and manufacturing process of semiconductor monocrystalline silicon wafer |
CN113793800B (en) * | 2021-08-18 | 2024-04-09 | 万华化学集团电子材料有限公司 | Impurity removing process and manufacturing process of semiconductor monocrystalline silicon wafer |
CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
Also Published As
Publication number | Publication date |
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CN100338270C (en) | 2007-09-19 |
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Effective date of registration: 20120121 Address after: 100088, 2, Xinjie street, Beijing Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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Address after: 100088, 2, Xinjie street, Beijing Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Patentee before: GRINM Semiconductor Materials Co., Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
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Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |