CN1750282A

CN1750282A - Light emitting diode

Info

Publication number: CN1750282A
Application number: CNA2005100360898A
Authority: CN
Inventors: 简稚文; 李金霞
Original assignee: Individual
Current assignee: Individual
Priority date: 2005-07-18
Filing date: 2005-07-18
Publication date: 2006-03-22

Abstract

A kind of LED includes a tube base, a luminous wafer and a lead pin charactering in also including a base plate for improving heat radiation performance and increasing the cross section area of the conduction lead between the wafer and the lead pin and the solid state of the connection, among which, the wafer is installed on the base palate up side down, the base plate is fixed in the tube base, the electrode of the wafer is conducted with the pin by a conductor of a led-out region adhered on the base plate, said conductor is a metal layer or a conduction bond layer coated or pressed on the led-out region to the end face of the pin of the base plate, so, said conductor, the luminous wafer electrode and the lead pin are contacted by face.

Description

Light-emitting diode

Technical field

The present invention relates to light-emitting diode, especially relate to improvement light-emitting diode conductive lead wire structure.

Background technology

The manufacture of present known light-emitting diode is in regular turn for solid brilliant, baking, and welding cathode and anode conductive lead wire, sealing, its manufacturing process is loaded down with trivial details, expend time in.Too soft by its conductive lead wire of light-emitting diode that existing technology produces, conductive lead wire contacts with the point that electrically connects as by welding between diode electrode and the pin, as shown in Figure 1.Because conductive lead wire 8 is that point contacts with diode electrode and pin, so reliability is not good, easily causes wire breaking and avalanche to cause short circuit; If be easy to overheated burning with big current lead-through.In addition, present known bonding wire processing procedure is that conductive lead wire is fixedly welded on the luminous zone of luminescent wafer, causes light to stop easily, thereby reduces the luminous efficiency of light-emitting diode.

Summary of the invention

The technical problem to be solved in the present invention provides a kind of finished product reliability that improves, and the light-emitting diode of current work greatly.

The present invention takes following technical scheme: manufacture and design a kind of light-emitting diode, comprise: base, luminescent wafer and pin thereof, also comprise and be used to improve heat dispersion and increase the cross-sectional area of the conduction connecting line between luminescent wafer and the pin and be electrically connected the substrate of firm degree, described luminescent wafer by upside-down mounting on substrate, substrate is fixed in the described base, by one section electric conductor conducting attached to the electrode draw-out area of substrate, described electric conductor is face with the electrical connection of luminescent wafer electrode and pin and contacts between described luminescent wafer electrode and the pin.

Described electric conductor is for coating or be crimped on metal level or the conductive adhesive layer of the electrode draw-out area of described substrate to the pin end face, the electrode that makes light-emitting diode is changed into the light-emitting diodes pipe electrode and is contacted with the face of electric conductor by traditional the contact with some conductive lead wire, and also has heat sinking function with the close-connected substrate of luminescent wafer.

The marginal zone of described substrate top electrode draw-out area also is provided with and hinders the arc-shaped groove that interruption that metal or conducting resinl flow distributes.

The luminescent wafer that is installed on the substrate can be monochromatic luminous element, also can be double-colored or the three-colour light-emitting body, and corresponding described substrate edges can be arranged two, three or four electrode draw-out areas.As the three-colour light-emitting wafer is installed on the substrate, then arbitrarily colour mixture is full-color light.

Compared with prior art, large-power light-emitting diodes of the present invention has following beneficial effect: can make the light-emitting diode of big electric current, increase the functional reliability of product, increase the luminous efficiency of product.

Description of drawings

Fig. 1 is existing single color LED internal structure schematic diagram;

Fig. 2 is a kind of embodiment single color LED internal structure schematic diagram of the present invention;

Fig. 3 is the partial top view of Fig. 2 embodiment single color LED;

Fig. 4 is the upper surface of base plate electrode district distribution schematic diagram of Fig. 2 embodiment single color LED;

The partial top view of Fig. 5 another kind of embodiment Tricolor LED of the present invention;

Fig. 6 is the upper surface of base plate electrode district distribution schematic diagram of Fig. 5 embodiment Tricolor LED.

Embodiment

Below in conjunction with accompanying drawing embodiments of the invention are described.

Embodiment one: single color LED.

As Fig. 2, Fig. 3 and shown in Figure 4, single color LED comprises, base 1, luminescent wafer 3, pin 2 and substrate 4; Described luminescent wafer 3 by metal or conducting resinl upside-down mounting on substrate 4.Substrate 4 is fixed in the described base 1, described luminescent wafer 3 has two electrodes, corresponding, described substrate 4 has two electrode draw-out areas 5, but the conductive lead wire between the electrode of described luminescent wafer 3 and the described pin 2 is to be coated on the metal of one section transmission current of described substrate 4 electrode draw-out areas 5 or the electric conductor 6 of conductive adhesive layer, makes the light-emitting diodes pipe electrode be contacted the face of changing into electric conductor 6 with some conductive lead wire and contacted by traditional.Obviously, the effect of described in the present embodiment substrate 4 is to increase the cross-sectional area of the conductive lead wire between the electrode of luminescent wafer 3 and the described pin 2 and be electrically connected firm degree, thermolysis in addition simultaneously.

Embodiment two: Tricolor LED.

As shown in Figure 5 and Figure 6, Tricolor LED comprises: base 1, pin 2 are fixed with the substrate 4 of the luminescent wafer 3 that three kinds of colors have been installed with conducting resinl or thermal paste on the described base 1.The area of described substrate 4 is greater than described luminescent wafer 3 gross area sums, and its edge has four electrode draw-out areas 5.Electrode draw-out area 5 corresponding on the electrode of described luminescent wafer 3 and the substrate 4 is electrically connected by metal or conducting resinl, but the i.e. upper surface coating of the electrode draw-out area 5 of substrate 4 and corresponding pin 2 is coated with the metal level of transmission current or conductive adhesive layer as described electric conductor 6.Equally, four of the three-colour light-emitting light-emitting diode electrodes are reliable firm face with the electrical connection of electric conductor 6 and contact.

The manufacture craft process description of light-emitting diode of the present invention is as follows: earlier luminescent wafer 3 is connected electrically in corresponding electrode draw-out area 5 on the substrate 4, again substrate 4 usefulness colloids are fixed on the base 1, the electrode draw-out area 5 on substrate 4 and the upper surface of corresponding pin 2 with conductive rubber or metallic cover encapsulate at last at last.

Claims

1. light-emitting diode, comprise: base (1), luminescent wafer (3) and pin (2) thereof, it is characterized in that: also comprise being used to improve heat dispersion and increasing the cross-sectional area of the conduction connecting line between luminescent wafer (3) and the pin (2) and be electrically connected the substrate (4) of firm degree, described luminescent wafer (3) by upside-down mounting on substrate (4), substrate (4) is fixed in the described base (1), by one section electric conductor (6) conducting attached to the electrode draw-out area (5) of substrate (4), described electric conductor (6) is face with the electrical connection of luminescent wafer (3) electrode and pin (2) and contacts between described luminescent wafer (3) electrode and the pin (2).

2. light-emitting diode according to claim 1 is characterized in that: described electric conductor (6) is for coating or be crimped on metal level or the conductive adhesive layer of the electrode draw-out area (5) of described substrate (4) to pin (2) end face.

3. light-emitting diode according to claim 1 and 2 is characterized in that: the marginal zone of described substrate (4) top electrode draw-out area (5) is provided with and hinders the arc-shaped groove (7) that interruption that metal or conducting resinl flow distributes.

4. light-emitting diode according to claim 1 and 2 is characterized in that: described luminescent wafer (3) by metal or conducting resinl upside-down mounting on substrate (4).

5. light-emitting diode according to claim 1 and 2 is characterized in that: described luminescent wafer (3) is monochromatic luminous element, has two electrodes, and corresponding, described substrate (4) is furnished with two electrode draw-out areas (5).

6. light-emitting diode according to claim 1 and 2 is characterized in that: described luminescent wafer (3) is double-colored or three-colour light-emitting body, has three or four electrodes, and corresponding, described substrate (4) is furnished with three or four electrode draw-out areas (5).

7. light-emitting diode according to claim 1 and 2 is characterized in that: the area of described substrate (4) is greater than described luminescent wafer (3) gross area sum.