CN104934406A - Die-bonding substrate and method for flip chip - Google Patents
Die-bonding substrate and method for flip chip Download PDFInfo
- Publication number
- CN104934406A CN104934406A CN201510291452.4A CN201510291452A CN104934406A CN 104934406 A CN104934406 A CN 104934406A CN 201510291452 A CN201510291452 A CN 201510291452A CN 104934406 A CN104934406 A CN 104934406A
- Authority
- CN
- China
- Prior art keywords
- flip chip
- heat
- glue
- substrate
- die bond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a die-bonding substrate for a flip chip, and the substrate comprises a ceramic substrate. The ceramic substrate is provided with a circuit, a circuit, and a gold channel. A die-bonding region of the ceramic substrate is provided with insulating glue or thermal conduction glue, and the flip chip is disposed on the insulating glue or thermal conduction glue in a die-bonding manner. The insulating glue or thermal conduction glue and the flip chip are wrapped by silver colloid or solder paste, and the flip chip is arranged in a die-bonding manner. The center of a functional region of the ceramic substrate is provided with an insulating glue or thermal conduction glue layer at first, and the silver colloid is employed for die bonding after the insulating glue or thermal conduction glue is solidified. The objective is to isolate the circuits of the substrate, to avoid glue climbing during high-temperature solidifying, and to avoid the electric leakage of a wafer. When the above scheme is employed for die-bonding operation, the substrate and method can prevent the short circuit of die-bonding silver colloid from causing electric leakage, reduce bubbles, and increase heat-dissipation speed of the wafer, thereby guaranteeing quality, and improving yield. Moreover, the flip chip generated through the above scheme is better in heat-dissipation performance.
Description
Technical field
The present invention relates to a kind of technical field of flip chip die bond, particularly relate to the substrate using the flip chip die bond of elargol die bond after a kind of employing adds the insulation such as insulating cement or heat-conducting glue colloid again.
Background technology
At present, the flip chip of prior art is generally use elargol die bond, because elargol is a kind of conductive material, easily glue is being climbed through hot setting, by the both positive and negative polarity conducting of flip chip, cause short circuit and leak electricity, increasing the generation of bubble, make flip chip produce leaky, yields can not get ensureing.And the radiating rate of the heat radiation of flip chip is slow, heat dispersion is not good, and heat radiation does not reach peak demand, have impact on the performance etc. of integral product.
Summary of the invention
The object of the invention is the shortcoming in order to overcome above-mentioned prior art, a kind of substrate of flip chip die bond is provided, the substrate of this flip chip die bond first puts last layer insulating cement or heat-conducting glue in the middle of the functional areas of ceramic substrate, carry out again using elargol die bond after insulating cement or heat-conducting glue solidification, its objective is to separate substrate circuit, make it avoid generation to climb glue when hot setting, stop wafer electric leakage.Use this scheme to carry out die bond operation, can effectively stop the short circuit of die bond elargol and the electric leakage that causes, reduce bubble and occur, increase the radiating rate of wafer, thus ensure quality, promote yield, and the flip chip heat dispersion produced by this scheme is better.
The technical solution adopted for the present invention to solve the technical problems is: a kind of substrate of flip chip die bond, comprise ceramic substrate, ceramic substrate is provided with circuit, circuit and Jin Dao, insulating cement or heat-conducting glue is provided with in the crystal bonding area of ceramic substrate, on insulating cement or heat-conducting glue, die bond has flip chip, and insulating cement or heat-conducting glue, flip chip are wrapped up and die bond flip chip by elargol or tin cream.
Further, described elargol or tin cream in the front and back equal die bond parcel flip chip of ceramic substrate, the elargol arranged in the front and back of ceramic substrate or the equal ovalize of tin cream.
Further, described insulating cement be silica gel, resin, silicones any one more than.
Or, described heat-conducting glue be superhigh temperature heat-conducting glue, organosilicon heat-conducting glue, epoxide resin AB glue, polyurethane adhesive, polyurethane guide thermal conducting glue, heat-conducting silicone grease any one more than.
Further, described elargol be high heat conduction elargol, high temperature resistant conductive silver glue, normal temperature cure elargol, rapid curing elargol any one more than.
Or described tin cream is leadless soldering tin paste.
In addition, the invention still further relates to a kind of method of flip chip die bond, steps of the method are:
(1) in being covered with circuit, the ceramic base plate surface of Jin Dao carries out preliminary treatment and cleans, and ensures that ceramic base plate surface is smooth, smooth and clean;
(2) on position, the crystal bonding area intermediate point of ceramic substrate, last layer insulating cement or heat-conducting glue is coated with, the upper flip chip of welding after insulating cement or heat-conducting glue solidification;
(3) carry out die bond with elargol to flip chip and insulating cement or heat-conducting glue, achieving and separate ceramic substrate circuit, is avoid climbing glue at hot setting, stops wafer electric leakage.
In sum, the substrate of flip chip die bond of the present invention first puts last layer insulating cement or heat-conducting glue in the middle of the functional areas of ceramic substrate, carry out again using elargol die bond after insulating cement or heat-conducting glue solidification, its objective is to separate substrate circuit, make it avoid generation to climb glue when hot setting, stop wafer electric leakage.Use this scheme to carry out die bond operation, can effectively stop the short circuit of die bond elargol and the electric leakage that causes, reduce bubble and occur, increase the radiating rate of wafer, thus ensure quality, promote yield, and the flip chip heat dispersion produced by this scheme is better.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the substrate of a kind of flip chip die bond of the embodiment of the present invention 1.
Embodiment
Embodiment 1
The substrate of a kind of flip chip die bond described by the present embodiment 1, as shown in Figure 1, comprise ceramic substrate 1, ceramic substrate is provided with circuit, circuit and Jin Dao, insulating cement 2 is provided with in the crystal bonding area of ceramic substrate, on insulating cement, die bond has flip chip 3, and insulating cement, flip chip are wrapped up and die bond flip chip by elargol 4.
This elargol in the front and back of ceramic substrate equal die bond parcel flip chip, in the equal ovalize of elargol that the front and back of ceramic substrate is arranged.
This insulating cement is silica gel, and this elargol is high heat conduction elargol.
In addition, the insulating cement in above-described embodiment also can adopt more than any one of resin, silicones.Or be adopt heat-conducting glue to replace the use of insulating cement, heat-conducting glue be superhigh temperature heat-conducting glue, organosilicon heat-conducting glue, epoxide resin AB glue, polyurethane adhesive, polyurethane guide thermal conducting glue, heat-conducting silicone grease any one more than.
In like manner, the elargol in above-described embodiment also can adopt more than any one of high temperature resistant conductive silver glue, normal temperature cure elargol, rapid curing elargol.Or adopt leadless soldering tin paste to replace the use of elargol.
In addition, the invention still further relates to a kind of method of flip chip die bond, steps of the method are:
(1) in being covered with circuit, the ceramic base plate surface of Jin Dao carries out preliminary treatment and cleans, and ensures that ceramic base plate surface is smooth, smooth and clean;
(2) on position, the crystal bonding area intermediate point of ceramic substrate, last layer insulating cement or heat-conducting glue is coated with, the upper flip chip of welding after insulating cement or heat-conducting glue solidification;
(3) carry out die bond with elargol to flip chip and insulating cement or heat-conducting glue, achieving and separate ceramic substrate circuit, is avoid climbing glue at hot setting, stops wafer electric leakage.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to structure of the present invention.Every above embodiment is done according to technical spirit of the present invention any simple modification, equivalent variations and modification, all still belong in the scope of technical scheme of the present invention.
Claims (7)
1. the substrate of a flip chip die bond, comprise ceramic substrate, ceramic substrate is provided with circuit, circuit and Jin Dao, it is characterized in that, insulating cement or heat-conducting glue is provided with in the crystal bonding area of ceramic substrate, on insulating cement or heat-conducting glue, die bond has flip chip, and insulating cement or heat-conducting glue, flip chip are wrapped up and die bond flip chip by elargol or tin cream.
2. the substrate of a kind of flip chip die bond according to claim 1, it is characterized in that, described elargol or tin cream in the front and back equal die bond parcel flip chip of ceramic substrate, the elargol arranged in the front and back of ceramic substrate or the equal ovalize of tin cream.
3. the substrate of a kind of flip chip die bond according to claim 2, is characterized in that, described insulating cement be silica gel, resin, silicones any one more than.
4. the substrate of a kind of flip chip die bond according to claim 2, it is characterized in that, described heat-conducting glue be superhigh temperature heat-conducting glue, organosilicon heat-conducting glue, epoxide resin AB glue, polyurethane adhesive, polyurethane guide thermal conducting glue, heat-conducting silicone grease any one more than.
5. the substrate of a kind of flip chip die bond according to claim 3 or 4, is characterized in that, described elargol be high heat conduction elargol, high temperature resistant conductive silver glue, normal temperature cure elargol, rapid curing elargol any one more than.
6. the substrate of a kind of flip chip die bond according to claim 3 or 4, is characterized in that, described tin cream is leadless soldering tin paste.
7. the method for a kind of flip chip die bond according to claim 1, it is characterized in that, described step is:
(1) in being covered with circuit, the ceramic base plate surface of Jin Dao carries out preliminary treatment and cleans, and ensures that ceramic base plate surface is smooth, smooth and clean;
(2) on position, the crystal bonding area intermediate point of ceramic substrate, last layer insulating cement or heat-conducting glue is coated with, the upper flip chip of welding after insulating cement or heat-conducting glue solidification;
(3) carry out die bond with elargol to flip chip and insulating cement or heat-conducting glue, achieving and separate ceramic substrate circuit, is avoid climbing glue at hot setting, stops wafer electric leakage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510291452.4A CN104934406A (en) | 2015-06-01 | 2015-06-01 | Die-bonding substrate and method for flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510291452.4A CN104934406A (en) | 2015-06-01 | 2015-06-01 | Die-bonding substrate and method for flip chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104934406A true CN104934406A (en) | 2015-09-23 |
Family
ID=54121503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510291452.4A Pending CN104934406A (en) | 2015-06-01 | 2015-06-01 | Die-bonding substrate and method for flip chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104934406A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1750282A (en) * | 2005-07-18 | 2006-03-22 | 简稚文 | Light emitting diode |
| US20130320513A1 (en) * | 2012-06-04 | 2013-12-05 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and fabrication method thereof |
| CN204204900U (en) * | 2014-06-06 | 2015-03-11 | 惠州雷通光电器件有限公司 | A kind of LED encapsulation structure |
| CN204905244U (en) * | 2015-06-01 | 2015-12-23 | 广东聚科照明股份有限公司 | Solid brilliant base plate of flip chip |
-
2015
- 2015-06-01 CN CN201510291452.4A patent/CN104934406A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1750282A (en) * | 2005-07-18 | 2006-03-22 | 简稚文 | Light emitting diode |
| US20130320513A1 (en) * | 2012-06-04 | 2013-12-05 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and fabrication method thereof |
| CN204204900U (en) * | 2014-06-06 | 2015-03-11 | 惠州雷通光电器件有限公司 | A kind of LED encapsulation structure |
| CN204905244U (en) * | 2015-06-01 | 2015-12-23 | 广东聚科照明股份有限公司 | Solid brilliant base plate of flip chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101996894B (en) | Semiconductor device and method of forming dam material around periphery of die to reduce warpage | |
| US10283376B2 (en) | Chip encapsulating method and chip encapsulating structure | |
| CN104392942A (en) | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste | |
| JP6265693B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPWO2014128899A1 (en) | Resin-sealed electronic control unit | |
| CN104241218A (en) | Flip chip plastic package structure with cooling structure and manufacturing method | |
| JP2016018866A (en) | Power module | |
| CN104916592A (en) | Manufacturing method of semiconductor device and semiconductor device | |
| JP2005244165A (en) | Process for producing semiconductor chip | |
| CN203055899U (en) | Wafer-thinning single-chip encapsulation piece with copper pillars | |
| CN204375722U (en) | A kind of semiconductor package | |
| CN104821304A (en) | Semiconductor device and manufacturing method of the same | |
| CN104821300A (en) | Semiconductor device and method of manufacturing the same | |
| CN104064532A (en) | Device package structure with heat radiating structure and manufacturing method thereof | |
| US20190385986A1 (en) | Chip packaging method and device with packaged chips | |
| CN204905244U (en) | Solid brilliant base plate of flip chip | |
| CN107248539A (en) | A kind of LED packaging technologies | |
| CN103050465A (en) | Wafer-thinning single-chip encapsulation piece with copper pillars and manufacturing technology thereof | |
| CN104934406A (en) | Die-bonding substrate and method for flip chip | |
| US20130000712A1 (en) | Solar cell device and packaging method thereof | |
| CN206595257U (en) | A kind of two-side radiation power model | |
| KR101324668B1 (en) | Method for Manufacturing Thermoelectric Module and Thermoelectric Module Thereby | |
| CN104134633A (en) | High-power chip flexible substrate packaging structure and packaging process | |
| CN103094236A (en) | Single-chip package part with wafer thinned after bottom fillers cures and manufacture process thereof | |
| CN105428505A (en) | Support used for LED flip die bond and die bond method utilizing support |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150923 |