CN1749688A - Method and device for igniting detonator - Google Patents
Method and device for igniting detonator Download PDFInfo
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- CN1749688A CN1749688A CN 200510003246 CN200510003246A CN1749688A CN 1749688 A CN1749688 A CN 1749688A CN 200510003246 CN200510003246 CN 200510003246 CN 200510003246 A CN200510003246 A CN 200510003246A CN 1749688 A CN1749688 A CN 1749688A
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- detonator
- semiconductor chip
- igniting
- glass fabric
- fabric substrate
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/12—Bridge initiators
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Abstract
The present invention discloses method and device of igniting detonator. Semiconductor chip is used as the igniting material of detonator and is heated with current pulse flowing through to vaporize the semiconductor chip material to form high temperature and high pressure plasma impact body. The plasma and its heat energy act on the detonating explosive grain to ignite the detonator. The present invention has greatly raised safety performance, excellent capacity of resisting static electricity, stray current and electromagnetic radiation, no environment, simple operation, short acting time and other advantages. The present invention may be used to ignite several kinds of explosive material.
Description
Technical field:
The present invention relates to a kind of method and device of igniting detonator, belong to detonator igniting blasting technical field.
Background technology:
At present, the igniting of the commercial electric detonator igniting blasting mechanism that is adopted in the prior art partly mainly is made up of electric heating bridge silk and medicament, in the manufacturing process of bridge silk and medicament owing to reasons such as raw material, production technology cause resistance, medicament sensitivity uniformity poor, medicament is misoperation easily under higher static, electromagnetic radiation, causes unsafe problems occurring in production, storage, transportation, the use.Fast development along with modern society, the radiation of the static that environment produces, stray electrical current, electromagnetic wave etc. and disturb increasing, ambient conditions becomes increasingly complex, therefore, the requirement of, anti-stray current antistatic in production, transportation, storage, use to commercial electric detonator, anti-electromagnetic-radiation ability is more and more higher.And therefore existing commercial electric detonator igniting blasting device can not satisfy the needs of use owing to exist antistatic, anti-stray current, all poor problem of anti-electromagnetic-radiation ability.
Summary of the invention:
The objective of the invention is: provide a kind of antistatic, anti-stray current, anti-electromagnetic-radiation ability all than higher, detonate rapidly, the high conformity that detonates, and the method for igniting detonator safe and convenient to use and device are to overcome the deficiencies in the prior art.
The present invention is achieved in that the method for igniting detonator of the present invention is, it adopts the igniting blasting material of semiconductor chip as detonator, and make its heating by the current impulse semiconductor chip of flowing through, after making the material vaporization evaporation of semiconductor chip, produce blast and form HTHP plasma impact body, on the heat energy that produces by this plasma and the priming grain of plasma effect in detonator of ejaculation, light the explosive in the detonator body, thus detonating primer.
The device of igniting detonator of the present invention is: it comprises the plastic plug (2) that is installed on the detonator, with be installed in plastic plug (2) on be used to be connected the lead (1) of power supply of detonating, it is characterized in that: be connected with a glass fabric substrate (3) in the bottom of plastic plug (2), on glass fabric substrate (3), be fixed with two copper pool faces (4) and a semiconductor chip (5), on every copper pool face (4), be respectively equipped with a chip lead pad (7) and detonator lead pad (9), on semiconductor chip (5), be provided with two metal electrodes (6), lead (1) passes plastic plug (2) and glass fabric substrate (3) is welded on respectively on the detonator lead pad (9), the two ends of conductive wire (8) be welded on respectively that metal electrode (6) on the semiconductor chip (5) is gone up and chip lead pad (7) on, make metal electrode (6) and detonator lead (1) conducting on the semiconductor chip (5), strengthened the steadiness of the semiconductor chip (5) that is installed on the glass fabric substrate (3) simultaneously.
The thickness that is fixed on the two copper pool faces (4) on the glass fabric substrate (3) is 0.05 ~ 0.5 millimeter.
Between two blocks of copper pool faces (4), be provided with a chip mounting groove (10), the flute length of groove (10) be 1.0 millimeters～3.0 millimeters, 0.3 millimeter～1.5 millimeters of groove widths, groove high 0.05 millimeter～0.5 millimeter; Being fixed on the chip mounting groove (10) that semiconductor chip (5) on the glass fabric substrate (3) is installed between two copper pool faces (4) locates.
Glass fabric substrate (3) be shaped as square or circle, its foursquare catercorner length or circular diameter are: 4～6 millimeters, the thickness of glass fabric substrate (3) is: 1～3 millimeter.
Conductive wire (8) is preferably aluminium wire or spun gold.
Owing to adopted technique scheme, the present invention replaces the bridge silk of original electric cap and the ignition mechanism that medicament is formed with semi-conducting material as seed material.The security performance of semiconductor igniting apparatus to cause bursting of the present invention aspect static, stray electrical current, electromagnetic radiation is superior more a lot of than the performance of metal bridge silk.The semi-conducting material that the detonator igniting blasting device uses has the temperature negative resistance charactertistic, and along with the increase of temperature, its semiconductive bridge resistance reduces, and electric current is easier to be passed through.Scorching hot silicon plasma transfers energy in the priming by the microconvection heat exchange, has only the microsecond magnitude its action time, and is more faster to the heat conduction of ignition charge than electric heating bridge silk.Prove through experimental study: adopt the detonator igniting blasting device of method made of the present invention to have the advantage that volume is little, the performance of detonating is good, adaptive capacity to environment is strong, action time is short, safe and reliable, and use the present invention's polytype energetic material that can detonate.Therefore, compared with prior art, can increase substantially detonator security of products energy with the present invention as the igniting blasting device of detonator, in addition, the present invention also have antistatic, anti-stray current, anti-electromagnetic-radiation ability height, free from environmental pollution, environmental suitability is strong, easy and simple to handle, to have action time short and get angry advantage such as high conformity.
Use when of the present invention, the ignition mechanism that will have electric cap earlier now removes, and semiconductor ignition devices of the present invention is installed in the installation place of existing electric cap ignition mechanism again, and can use after the ignition power supply of the lead of apparatus of the present invention and electric cap connected.
Description of drawings:
Accompanying drawing 1 is the structural representation of apparatus of the present invention;
Accompanying drawing 2 is that the A of accompanying drawing 1 is to structural representation;
The specific embodiment:
Embodiments of the invention: when making the igniting blasting device of electric cap, adopt the semiconductor chip of making by polycrystalline silicon material 5 sold on the market igniting blasting material as electric cap, and use the power supply of the ignition power supply of former electric cap as this semiconductor chip, make the current impulse of this power supply can act on the semi-conducting material, like this, when electric cap is ignited in energising, make its heating by the current impulse semi-conducting material of flowing through, after making semi-conducting material vaporization evaporation, produce blast and form HTHP plasma impact body, on the heat energy that produces by this plasma and the priming grain of plasma effect in detonator of ejaculation, light the explosive in the detonator body, thus detonating primer.
When concrete making igniting blasting device of the present invention, it is installed in the plastic plug that plastic plug 2 on the detonator can directly adopt electric cap in the prior art, and on plastic plug 2, install routinely and be used to connect the lead 1 of power supply of detonating, then in the bottom of plastic plug 2 fixedly connected on a glass fabric substrate 3, when making glass fabric substrate 3, be made into square or circle, and its foursquare catercorner length or circular diameter be controlled at 4～6 millimeters scope, the THICKNESS CONTROL of its glass fabric substrate 3 is 1～3 millimeter scope; Fixing two copper pool faces 4 and a semiconductor chip 5 on the glass fabric substrate 3 then, the THICKNESS CONTROL that is fixed on two copper pool faces 4 on the glass fabric substrate 3 is 0.05～0.5 millimeter scope, and when making copper pool face 4, between two copper pool faces 4, make a chip mounting groove 10, the semiconductor chip 5 that is fixed on the glass fabric substrate 3 is installed in two chip mounting groove 10 places between the copper pool face 4; The chip lead pad 7 and the detonator lead pad 9 that on every copper pool face 4, prepare a conduction respectively, two metal electrodes 6 of preparation on semiconductor chip 5, lead 1 is passed plastic plug 2 and glass fabric substrate 3 is welded on respectively on the detonator lead pad 9, the two ends of conductive wire 8 are welded on respectively on the metal electrode 6 on the semiconductor chip 5 and on the chip lead pad 7, electric metal silk 8 not only makes the metal electrode 6 and detonator lead 1 conducting on the semiconductor chip 5, has also strengthened the steadiness of the semiconductor chip 5 that is installed on the glass fabric substrate 3 simultaneously.Conductive wire 8 preferably adopts aluminium wire or spun gold.
Claims (6)
1, a kind of method of igniting detonator, it is characterized in that: it adopts the igniting blasting material of semiconductor chip as detonator, and make its heating by the current impulse semiconductor chip of flowing through, after making the material vaporization evaporation of semiconductor chip, produce blast and form HTHP plasma impact body, on the heat energy that produces by this plasma and the priming grain of plasma effect in detonator of ejaculation, light the explosive in the detonator body, thus detonating primer.
2, a kind of device of igniting detonator, being used to be connected on it comprises the plastic plug (2) that is installed on the detonator and is installed in plastic plug (2) the detonate lead (1) of power supply, it is characterized in that: be connected with a glass fabric substrate (3) in the bottom of plastic plug (2), on glass fabric substrate (3), be fixed with two copper pool faces (4) and a semiconductor chip (5), on every copper pool face (4), be respectively equipped with a chip lead pad (7) and detonator lead pad (9), on semiconductor chip (5), be provided with two metal electrodes (6), lead (1) passes plastic plug (2) and glass fabric substrate (3) is welded on respectively on the detonator lead pad (9), the two ends of conductive wire (8) be welded on respectively that metal electrode (6) on the semiconductor chip (5) is gone up and chip lead pad (7) on.
3, the device of igniting detonator according to claim 2 is characterized in that: the thickness that is fixed on the two copper pool faces (4) on the glass fabric substrate (3) is 0.05～0.5 millimeter.
4, the device of igniting detonator according to claim 2, it is characterized in that: between two blocks of copper pool faces (4), be provided with a chip mounting groove (10), the flute length of groove (10) be 1.0 millimeters～3.0 millimeters, 0.3 millimeter～1.5 millimeters of groove widths, groove high 0.05 millimeter～0.5 millimeter; Being fixed on the chip mounting groove (10) that semiconductor chip (5) on the glass fabric substrate (3) is installed between two copper pool faces (4) locates.
5, the device of igniting detonator according to claim 2, it is characterized in that: glass fabric substrate (3) be shaped as square or circle, its foursquare catercorner length or circular diameter are: 4～6 millimeters, the thickness of glass fabric substrate (3) is: 1～3 millimeter.
6, the device of igniting detonator according to claim 2 is characterized in that: conductive wire (8) is preferably aluminium wire or spun gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100032465A CN100465571C (en) | 2005-10-21 | 2005-10-21 | Method and device for igniting detonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100032465A CN100465571C (en) | 2005-10-21 | 2005-10-21 | Method and device for igniting detonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1749688A true CN1749688A (en) | 2006-03-22 |
| CN100465571C CN100465571C (en) | 2009-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100032465A Active CN100465571C (en) | 2005-10-21 | 2005-10-21 | Method and device for igniting detonator |
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| CN (1) | CN100465571C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101672611A (en) * | 2009-09-16 | 2010-03-17 | 衡阳晶体管有限公司 | Plasma ignition electric detonator |
| CN101672612A (en) * | 2009-09-16 | 2010-03-17 | 衡阳晶体管有限公司 | Plasma ejection igniter |
| CN103267830A (en) * | 2013-05-09 | 2013-08-28 | 西安交通大学 | Method for evaluating ablation characteristic of solid energetic material under plasma jet action |
| CN105627841A (en) * | 2015-12-31 | 2016-06-01 | 贵州久联民爆器材发展股份有限公司 | Ignition method, structure and manufacturing method for electric detonator |
| CN105674818A (en) * | 2016-02-03 | 2016-06-15 | 西安贯通能源科技有限公司 | Method driving energetic electrode to release energy and produce shock waves by high-voltage discharge |
| CN108955430A (en) * | 2018-10-17 | 2018-12-07 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electrion plasma ignition utensil |
| CN109539911A (en) * | 2019-01-17 | 2019-03-29 | 山西宸润隆科技有限责任公司 | Circumscribed high-voltage energy storage digital circuit triggers high pressure plasma igniter safe electric detonator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09184698A (en) * | 1995-10-30 | 1997-07-15 | Uchihashi Estec Co Ltd | Method for manufacturing electrical detonator |
| US5969286A (en) * | 1996-11-29 | 1999-10-19 | Electronics Development Corporation | Low impedence slapper detonator and feed-through assembly |
| CN1235838C (en) * | 2004-04-09 | 2006-01-11 | 贵州久联民爆器材发展股份有限公司 | Detonator dull sensed to electricity |
| CN2847209Y (en) * | 2005-10-28 | 2006-12-13 | 贵州久联民爆器材发展股份有限公司 | Device for igniting detonating primer |
-
2005
- 2005-10-21 CN CNB2005100032465A patent/CN100465571C/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101672611A (en) * | 2009-09-16 | 2010-03-17 | 衡阳晶体管有限公司 | Plasma ignition electric detonator |
| CN101672612A (en) * | 2009-09-16 | 2010-03-17 | 衡阳晶体管有限公司 | Plasma ejection igniter |
| CN101672612B (en) * | 2009-09-16 | 2013-06-05 | 李爱夫 | Plasma ejection igniter |
| CN101672611B (en) * | 2009-09-16 | 2013-07-17 | 李爱夫 | Plasma ignition electric detonator |
| CN103267830A (en) * | 2013-05-09 | 2013-08-28 | 西安交通大学 | Method for evaluating ablation characteristic of solid energetic material under plasma jet action |
| CN105627841A (en) * | 2015-12-31 | 2016-06-01 | 贵州久联民爆器材发展股份有限公司 | Ignition method, structure and manufacturing method for electric detonator |
| CN105674818A (en) * | 2016-02-03 | 2016-06-15 | 西安贯通能源科技有限公司 | Method driving energetic electrode to release energy and produce shock waves by high-voltage discharge |
| CN105674818B (en) * | 2016-02-03 | 2017-06-16 | 西安贯通能源科技有限公司 | A kind of electrion drive containing can electrode release energy the method that produces shock wave |
| CN108955430A (en) * | 2018-10-17 | 2018-12-07 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electrion plasma ignition utensil |
| CN108955430B (en) * | 2018-10-17 | 2023-10-10 | 山西宸润隆科技有限责任公司 | Safety electric detonator of high-voltage discharge plasma ignition device |
| CN109539911A (en) * | 2019-01-17 | 2019-03-29 | 山西宸润隆科技有限责任公司 | Circumscribed high-voltage energy storage digital circuit triggers high pressure plasma igniter safe electric detonator |
| CN109539911B (en) * | 2019-01-17 | 2024-05-17 | 山西宸润隆科技有限责任公司 | External high-voltage energy-storage digital circuit triggering high-voltage plasma ignition safety electric detonator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100465571C (en) | 2009-03-04 |
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