CN201488667U

CN201488667U - Plasma jet igniter

Info

Publication number: CN201488667U
Application number: CN2009200660970U
Authority: CN
Inventors: 费凡; 李爱夫
Original assignee: HENGYANG TRANSISTOR CO Ltd
Priority date: 2009-09-16
Filing date: 2009-09-16
Publication date: 2010-05-26
Anticipated expiration: 2019-09-16

Abstract

A plasma jet igniter is characterized by consisting of a base, a polysilicon plasma ignition chip and an external shield, wherein the base has two concave pits that are formed by sinking the top surface into an upper concave pit and a lower concave pit; the chip is bonded in the lower concave pit of the base; the chip and an electrode conductor thereof are encapsulated in the base; the top surface on the external shield is provided with a crater that corresponds to the upper concave pit of the base and is clamped outside the base and covers the base; the extremely hot and high-speed jet polysilicon plasma particle ignition technology is used for replacing the traditional hot bridge wire ignition technology; under the excitation of electric pulse, the polysilicon mass block is fused from solid state to liquid state instantly and gasified from liquid state to gas state, thus forming the polysilicon plasma with high temperature, high pressure and acute impact by the constraining of the two concave pits; and the upper concave pit restrains the polysilicon plasma jetted in semi-spherical shape to directly enter a linear acceleration chamber to complete the jetting, therefore the detonator is detonated instantly by a fire flash vent; and the detonation energy is low, the detonation time is short, the electric detonator can be produced automatically in large scale, is applicable to different environments of high temperature and high pressure, and is safe and reliable.

Description

Plasma ejection igniter

Technical field

The utility model relates to a kind of igniter, particularly a kind of plasma ejection igniter.

Background technology

At present, in the igniter as civilian electric cap, ignition element is to adopt to wrap one deck chemical reagent on the heat bridge silk, by big electric current the bridge silk is heated in the bridge silk, thereby the chemical reagent that will wrap on the bridge silk adds thermal ignition.The chemical reagent layer is a manual application, be difficult to ensure the quality of products, and reaction speed is slow, and ignitor firing time is long, ignites poor stability in high temperature, hyperbaric environment easily.

Summary of the invention

The purpose of this utility model is in order to overcome above-mentioned weak point of the prior art, and provides a kind of volume little, and action time is short, safety, reliable, the plasma ejection igniter that adaptive capacity to environment is strong.

For achieving the above object, the technical solution adopted in the utility model is: plasma ejection igniter is by rewinding shape concave-concave pit foundation seat, polysilicon plasma igniting chip, outer shield is formed, be recessed into down successively in the middle of the end face on the pedestal, following concave-concave hole, polysilicon plasma igniting chip is followed successively by monocrystalline substrate from bottom to top, the dielectric bottom, the polysilicon mass that thin layer is arranged outward, insulating medium layer, the metal film electrode pad, in the following pit of die bonding in pedestal, its cathode lead is drawn by the inner chamber of pedestal bottom, chip, cathode lead is encapsulated in the pedestal, the pit of the corresponding pedestal of end face has bocca on the outer shield, and card covers on outside the pedestal.

The utility model with the traditional heat bridge silk firing technique of polysilicon plasma particle firing technique replacement of huge heat, high velocity jet, has been filled up the domestic technique blank owing to adopt above design.The polysilicon mass accurately is positioned in the following pit of pedestal, excitation following moment of electric pulse by solid-state molten for liquid, be gasificated into gaseous state by liquid state, and via concave-concave hole constraint formation high temperature, high pressure, the polysilicon plasma of severe impact, the polysilicon plasma confinement that last pit then will be hemispherical injection enters straight line and quickens thorax and finish accelerating jetting, ignition energy≤1.5mJ, action time≤3 μ s ignites, overcome the ignition energy height of heat bridge silk, long action time, reliability is low, shortcomings such as poor anti jamming capability, volume is little, can carry out automatic mass production, be adapted to high temperature, various environment such as high pressure use down, safety, reliably.

Description of drawings

Fig. 1 is the utility model structural representation;

Fig. 2 is the A-A generalized section of Fig. 1;

Fig. 3 is a polysilicon plasma igniting chip structure generalized section.

The specific embodiment

Now illustrated embodiment is made detailed description to the utility model in conjunction with the accompanying drawings.

As shown in the figure, plasma ejection igniter is by rewinding shape concave-concave hole injection moulding pedestal 1, polysilicon plasma igniting chip 2, outer shield 3 is formed, the recessed successively circular pit 4 of going up in the middle of the end face on the pedestal 1, square pit 5 down, polysilicon plasma igniting chip 2 is followed successively by monocrystalline substrate 6 from bottom to top, dielectric bottom 7, the polysilicon mass 8 that thin layer is arranged outward, insulating medium layer 9, metal film electrode pad 10, chip 2 is bonded in the following pit 5 in the pedestal 1, its flat bent cathode lead 11 is drawn by the inner chamber of pedestal 1 bottom, chip 2, cathode lead 11 is encapsulated in the pedestal 1, the pit of the corresponding pedestal 1 of end face has bocca 12 on the outer shield 3, and card covers on outside the pedestal 1.

Claims

1. plasma ejection igniter, it is characterized in that it is by rewinding shape concave-concave pit foundation seat (1), polysilicon plasma igniting chip (2), outer shield (3) is formed, pedestal (1) is recessed into down in the middle of going up end face successively, following pit (4), (5), polysilicon plasma igniting chip (2) is followed successively by monocrystalline substrate (6) from bottom to top, dielectric bottom (7), the polysilicon mass (8) that thin layer is arranged outward, insulating medium layer (9), metal film electrode pad (10), chip (2) is bonded in the following pit (5) in the pedestal (1), its cathode lead (11) is drawn by the inner chamber of pedestal (1) bottom, chip (2), cathode lead (11) is encapsulated in the pedestal (1), the pit that outer shield (3) is gone up the corresponding pedestal of end face (1) has bocca (12), and card covers on outside the pedestal (1).