CN108627056A - A kind of non-priming electric detonator and its control method - Google Patents
A kind of non-priming electric detonator and its control method Download PDFInfo
- Publication number
- CN108627056A CN108627056A CN201710175063.4A CN201710175063A CN108627056A CN 108627056 A CN108627056 A CN 108627056A CN 201710175063 A CN201710175063 A CN 201710175063A CN 108627056 A CN108627056 A CN 108627056A
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- Prior art keywords
- high pressure
- fuze
- semiconductor
- conversion equipment
- voltage
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Links
- 230000037452 priming Effects 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000000977 initiatory effect Effects 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 238000004891 communication Methods 0.000 claims abstract description 37
- 238000005422 blasting Methods 0.000 claims abstract description 19
- 238000005474 detonation Methods 0.000 claims abstract description 18
- 238000004146 energy storage Methods 0.000 claims abstract description 17
- 239000002775 capsule Substances 0.000 claims abstract description 9
- 230000000638 stimulation Effects 0.000 claims abstract description 7
- 230000009471 action Effects 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 239000003999 initiator Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002360 explosive Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42C—AMMUNITION FUZES; ARMING OR SAFETY MEANS THEREFOR
- F42C19/00—Details of fuzes
- F42C19/08—Primers; Detonators
- F42C19/12—Primers; Detonators electric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
Abstract
The invention discloses a kind of non-priming electric detonator and its control methods.The present invention non-priming electric detonator include：Control circuit, high pressure conversion equipment, semiconductor initiating unit and the main blasting charge being encapsulated in capsule, high pressure conversion equipment include the increasing apparatus being electrically connected successively, high-voltage energy storage device and high pressure detonation chain；The present invention uses high pressure conversion equipment, and the low voltage communication instruction in addition to fuze is converted into high voltage and stores, fuze is converted into high voltage and exports to semiconductor initiating unit；Semiconductor initiating unit directly generates plasma under instantaneous large-current stimulation；Plasma directly bombards main blasting charge and realizes detonation；One aspect of the present invention avoids using priming, to improve security of system, improves detonator and acts on precision；On the other hand the cost of system is reduced with volume so that it can which mass replaces existing electric cap and electric detonator.
Description
Technical field
The present invention relates to priming system detonating techniques, and in particular to a kind of non-priming electric detonator and its control method.
Background technology
Existing electric detonator is using classical electric cap framework, and explosive train is using primary priming system-priming-propagation of explosion
The form of the main blasting charge of medicine-.This explosive train is due to the use of sensitive priming, to detonator in production, transport and use
Security risk is brought in the process.Priming is highly prone to electromagnetic environment, temperature environment and mechanical environment in above process to be influenced,
Accidental explosion occurs, causes personnel's property loss.In addition, priming production is poor with assembly technology consistency, detonator is caused to prolong
Phase precision is not high, it is difficult to meet the requirement of current civil and military field high-precision detonation operation.
To solve the above problems, carrying out Slapper detonator research both at home and abroad, which uses the impact piece of high voltage drive
Main blasting charge is detonated directly, to avoid using priming.It is hidden that Slapper detonator preferably resolves the safety that priming is brought
Suffer from, also improves detonator effect precision, but its output voltage is up to the even upper kilovolt of hundreds of volts, causes system construction complicated, body
Product is larger, and cost is higher, is chiefly used in high value platform, it is difficult to which mass replaces existing electric cap and electric detonator.
Invention content
For the above problems of the prior art, the present invention provides a kind of novel non-priming electric detonator；It should
On the one hand detonator avoids using priming, to improve security of system, improve detonator and act on precision；On the other hand system is reduced
Cost is with volume so that it can which mass replaces existing electric cap and electric detonator.
It is an object of the present invention to provide a kind of non-priming electric detonators.
The present invention non-priming electric detonator include：Control circuit, high pressure conversion equipment, semiconductor initiating unit, master
Blasting charge and capsule；Wherein, control circuit, high pressure conversion equipment, semiconductor initiating unit and main blasting charge are encapsulated in detonator
In shell；Initiator outside capsule is electrically connected to control circuit；Control circuit is electrically connected to high pressure conversion equipment；It is high
Pressure conversion equipment is electrically connected to semiconductor initiating unit；The main blasting charge of fuze action zone face of semiconductor initiating unit；Initiator
Low voltage communication instruction is sent out, energy is carried in low voltage communication instruction, using the bus communication mode of energy and information coupled transfer
It is transmitted to control circuit；Control circuit judges that low voltage communication instructs, and is transmitted to high pressure conversion equipment；High pressure conversion equipment will remove
The energy carried in low voltage communication instruction outside fuze is converted into high voltage and stores；High pressure conversion equipment will detonate
Instruction is converted into high voltage and exports to semiconductor initiating unit；Semiconductor initiating unit is under instantaneous large-current stimulation, directly
Generate plasma；Plasma directly bombards main blasting charge and realizes detonation.
High pressure conversion equipment includes increasing apparatus, high-voltage energy storage device and high pressure detonation chain；Wherein, control circuit electricity
It is connected to increasing apparatus；Low voltage communication instruction from control circuit is converted to high voltage by increasing apparatus, and is transmitted to high pressure
It is stored in energy storage device；When low voltage communication instruction is fuze, high-voltage energy storage device passes through the high voltage of storage
High pressure detonation chain is exported to semiconductor initiating unit.
Semiconductor initiating unit includes substrate, insulating layer, plasma generation layer, fuze action zone and a pair of of metal pad；Its
In, insulating layer is formed on substrate；Layer occurs for the plasma for forming symmetrical shape on the insulating layer；Layer occurs in plasma
On both ends form a pair of of metal pad；The region that plasma occurs in layer to be located between a pair of of metal pad forms detonation
Area.A pair of output of the high pressure detonation chain of high pressure conversion equipment is electrically connected a pair of of metal pad.The shape of fuze action zone is
Rectangle or butterfly；Butterfly is the opposite antiparallelogram in two upper bottoms.Plasma occur layer using can be compatible with semiconductor technology and
The conductor material of plasma, such as DOPOS doped polycrystalline silicon can be generated.
Low voltage communication instructs：Clock alignment detection instruction, register instruction, communication check instruction, be delayed set instruction,
Charging instruction, fuze, electric discharge instruction and log-out instruction.
It is another object of the present invention to provide a kind of control methods of non-priming electric detonator.
The control method of the non-priming electric detonator of the present invention, includes the following steps：
1) initiator sends out low voltage communication instruction, carries energy in low voltage communication instruction, biography is coupled with information using energy
Defeated bus communication mode is transmitted to control circuit；
2) control circuit judges that low voltage communication instructs, and is transmitted to high pressure conversion equipment；
3) energy carried in the low voltage communication instruction in addition to fuze is converted into high voltage simultaneously by high pressure conversion equipment
It stores；
4) when initiator sends out fuze, fuze is converted into high voltage and exported to half by high pressure conversion equipment
Conductor initiating unit；
5) semiconductor initiating unit directly generates plasma under instantaneous large-current stimulation；
6) plasma directly bombards main blasting charge and realizes and detonates.
Wherein, in step 3), increasing apparatus turns the low voltage communication instruction in addition to fuze from control circuit
It is changed to the high voltage no more than 300V, and is transmitted in high-voltage energy storage device and stores.
In step 4), the fuze from control circuit is converted to the high voltage no more than 300V by pressure device, and
It is transmitted in high-voltage energy storage device；The high voltage of storage is exported by high pressure detonation chain to semiconductor and is risen by high-voltage energy storage device
Quick-fried unit.Advantages of the present invention：
The present invention uses high pressure conversion equipment, and the low voltage communication instruction in addition to fuze is converted into high voltage and is stored
Get up, fuze is converted into high voltage and exports to semiconductor initiating unit；Semiconductor initiating unit is in instantaneous large-current
Under stimulation, plasma is directly generated；Plasma directly bombards main blasting charge and realizes detonation；One aspect of the present invention avoids using
Priming improves detonator and acts on precision to improve security of system；On the other hand the cost and volume for reducing system, make it
Existing electric cap and electric detonator can be replaced with mass.
Description of the drawings
Fig. 1 is the structure diagram of the non-priming electric detonator of the present invention；
Fig. 2 is the sectional view of one embodiment of the semiconductor initiating unit of the non-priming electric detonator of the present invention；
Fig. 3 is the vertical view of the semiconductor initiating unit of the non-priming electric detonator of the present invention, wherein (a) is detonation
The shape in area is the vertical view of rectangle, be the shape of fuze action zone is (b) vertical view of butterfly.
Specific implementation mode
Below in conjunction with the accompanying drawings, by embodiment, the present invention will be further described.
As shown in Figure 1, the non-priming electric detonator of the present embodiment includes：Control circuit, high pressure conversion equipment, semiconductor
Initiating unit, main blasting charge and capsule；Wherein, control circuit, high pressure conversion equipment, semiconductor initiating unit and main blasting charge
It is encapsulated in capsule；Initiator outside capsule is electrically connected to control circuit；Control circuit is electrically connected to high pressure
Conversion equipment；High pressure conversion equipment is electrically connected to semiconductor initiating unit；The main dress of fuze action zone face of semiconductor initiating unit
Explosive；Main blasting charge is cylindricality, the fuze action zone of end face face semiconductor initiating unit.Energy and the bus of information coupled transfer are adopted
Conversion MBUS is communicated with remote meter reading.
High pressure conversion equipment includes increasing apparatus, high-voltage energy storage device and the high pressure detonation chain that electricity is connected successively.
As shown in Fig. 2, semiconductor initiating unit includes substrate 1, insulating layer 2, plasma generation layer 3, fuze action zone 5 and one
To metal pad 4；Wherein, insulating layer 2 is formed on substrate 1；Layer occurs for the plasma that symmetrical shape is formed on insulating layer 2
3, the shape that layer 3 occurs for plasma is rectangle or butterfly；The both ends on layer 3 occur in plasma and form a pair of of metal pad
4；The region that plasma occurs in layer to be located between a pair of of metal pad forms fuze action zone 5.The high pressure of high pressure conversion equipment rises
A pair of output of quick-fried circuit is electrically connected a pair of of metal pad.Plasma occurs layer and uses DOPOS doped polycrystalline silicon.
As shown in figure 3, the shape of fuze action zone is rectangle or butterfly；Butterfly is the opposite antiparallelogram in two upper bottoms.
The method of the semiconductor initiating unit prepared based on semiconductor technology of the present embodiment, is included the following steps：1) exist
Oxidation generates insulating layer on substrate, and substrate uses monocrystalline silicon wafer, insulating layer to use silicon dioxide film；2) it utilizes on the insulating layer
Vapor deposition method prepares polysilicon film, and phosphorus atoms are adulterated to polysilicon film, forms plasma and layer occurs, to the polycrystalline after doping
Silicon fiml etches, and forms rectangle or the pattern of butterfly；3) both ends that layer occurs in plasma sputter to form a pair of of metal pad,
The region that plasma occurs between upper a pair of of metal pad forms fuze action zone；4) it finally to disk scribing, obtains individually partly leading
Body initiating unit chip.
The control method of the non-priming electric detonator of the present embodiment, includes the following steps：
1) initiator sends out low voltage communication instruction, carries energy in low voltage communication instruction, biography is coupled with information using energy
Defeated bus communication mode is transmitted to control circuit；
2) control circuit judges that low voltage communication instructs, and is transmitted to high pressure conversion equipment；
3) increasing apparatus in high pressure conversion equipment instructs the low voltage communication in addition to fuze from control circuit
The high voltage no more than 300V is converted to, and is transmitted to store in high-voltage energy storage device and leads to the low pressure in addition to fuze
The energy carried in letter instruction is converted into high voltage and stores；
4) when initiator sends out fuze, increasing apparatus in high pressure conversion equipment is by the detonation from control circuit
Instruction is converted to the high voltage no more than 300V, and is transmitted in high-voltage energy storage device；High-voltage energy storage device is electric by the height of storage
Pressure is exported by high pressure detonation chain to semiconductor initiating unit；
5) semiconductor initiating unit directly generates plasma under instantaneous large-current stimulation；
6) plasma directly bombards main blasting charge and realizes and detonates.
It is finally noted that the purpose for publicizing and implementing mode is to help to further understand the present invention, but ability
The technical staff in domain is appreciated that：Without departing from the spirit and scope of the invention and the appended claims, it is various replacement and
Modification is all possible.Therefore, the present invention should not be limited to embodiment disclosure of that, the scope of protection of present invention with
Subject to the range that claims define.
Claims (9)
1. a kind of non-priming electric detonator, which is characterized in that the non-priming electric detonator includes：Control circuit, high pressure
Conversion equipment, semiconductor initiating unit, main blasting charge and capsule；Wherein, the control circuit, high pressure conversion equipment, partly lead
Body initiating unit and main blasting charge are encapsulated in capsule；Initiator outside capsule is electrically connected to control circuit；Institute
It states control circuit and is electrically connected to high pressure conversion equipment；The high pressure conversion equipment is electrically connected to semiconductor initiating unit；Institute
State the main blasting charge of fuze action zone face of semiconductor initiating unit；The initiator sends out low voltage communication instruction, low voltage communication instruction
Middle carrying energy is transmitted to control circuit using the bus communication mode of energy and information coupled transfer；Control circuit judges low
Communication instruction is pressed, and is transmitted to high pressure conversion equipment；High pressure conversion equipment will be taken in the low voltage communication instruction in addition to fuze
The energy of band is converted into high voltage and stores；Fuze is converted into high voltage and exported to partly leading by high pressure conversion equipment
Body initiating unit；Semiconductor initiating unit directly generates plasma under instantaneous large-current stimulation；Plasma directly bombards
Main blasting charge realizes detonation.
2. non-priming electric detonator as described in claim 1, which is characterized in that the high pressure conversion equipment includes that boosting fills
It sets, high-voltage energy storage device and high pressure detonation chain；Wherein, the control circuit is electrically connected to increasing apparatus；The boosting dress
It sets and the low voltage communication instruction from control circuit is converted into high voltage, and be transmitted in high-voltage energy storage device and store；When
Low voltage communication instruction be fuze when, the high-voltage energy storage device by the high voltage of storage by high pressure detonation chain export to
Semiconductor initiating unit.
3. non-priming electric detonator as described in claim 1, which is characterized in that the semiconductor initiating unit includes lining
Layer, fuze action zone and a pair of of metal pad occur for bottom, insulating layer, plasma；Wherein, insulating layer is formed on substrate；It is insulating
Layer occurs for the plasma that symmetrical shape is formed on layer；The both ends on layer occur in plasma and form a pair of of metal pad；Deng
The region that gas ions occur in layer to be located between a pair of of metal pad forms fuze action zone.
4. non-priming electric detonator as claimed in claim 3, which is characterized in that the shape of the fuze action zone is rectangle or butterfly
Shape.
5. non-priming electric detonator as claimed in claim 3, which is characterized in that it is simultaneous using energy that layer occurs for the plasma
Hold semiconductor technology and the conductor material of plasma can be generated.
6. non-priming electric detonator as described in claim 1, which is characterized in that the low voltage communication, which instructs, includes：Clock
Calibration detection instruction, register instruction, communication check instruction, delay set instruction, charging instruction, fuze, electric discharge instruct and
Log-out instruction.
7. a kind of control method of non-priming electric detonator, which is characterized in that the control method includes the following steps：
1) initiator sends out low voltage communication instruction, energy is carried in low voltage communication instruction, using energy and information coupled transfer
Bus communication mode is transmitted to control circuit；
2) control circuit judges that low voltage communication instructs, and is transmitted to high pressure conversion equipment；
3) energy carried in the low voltage communication instruction in addition to fuze is converted into high voltage and stored by high pressure conversion equipment
Get up；
4) when initiator sends out fuze, fuze is converted into high voltage and exported to semiconductor by high pressure conversion equipment
Initiating unit；
5) semiconductor initiating unit directly generates plasma under instantaneous large-current stimulation；
6) plasma directly bombards main blasting charge and realizes and detonates.
8. control method as claimed in claim 7, which is characterized in that in step 3), increasing apparatus will come from control circuit
The low voltage communication instruction in addition to fuze be converted to high voltage no more than 300V, and be transmitted in high-voltage energy storage device and deposit
Storage is got up.
9. control method as claimed in claim 7, which is characterized in that in step 4), pressure device will be from control circuit
Fuze is converted to the high voltage no more than 300V, and is transmitted in high-voltage energy storage device；High-voltage energy storage device is by storage
High voltage is exported by high pressure detonation chain to semiconductor initiating unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710175063.4A CN108627056B (en) | 2017-03-22 | 2017-03-22 | Electronic detonator without initiating explosive and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710175063.4A CN108627056B (en) | 2017-03-22 | 2017-03-22 | Electronic detonator without initiating explosive and control method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108627056A true CN108627056A (en) | 2018-10-09 |
| CN108627056B CN108627056B (en) | 2021-02-12 |
Family
ID=63707293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710175063.4A Active CN108627056B (en) | 2017-03-22 | 2017-03-22 | Electronic detonator without initiating explosive and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108627056B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109141146A (en) * | 2018-10-17 | 2019-01-04 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electromagnetism interference electrion plasma ignition utensil |
| CN109297375A (en) * | 2018-11-10 | 2019-02-01 | 赵伽文 | A kind of circuit board side input and output electron excitation conductive material ignition method |
| CN111290012A (en) * | 2020-02-25 | 2020-06-16 | 四川美创达电子科技有限公司 | Ignition control system for seismic source bomb |
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| CN1749686A (en) * | 2005-10-21 | 2006-03-22 | 贵州久联民爆器材发展股份有限公司 | Semiconductor electric detonator |
| CN103644786A (en) * | 2013-12-03 | 2014-03-19 | 桂林航天电子有限公司 | High-voltage ignition relay and operating method thereof |
| CN105698617A (en) * | 2016-01-25 | 2016-06-22 | 北京理工大学 | Electronic detonator controlled through detonation controller and control method thereof |
-
2017
- 2017-03-22 CN CN201710175063.4A patent/CN108627056B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1749686A (en) * | 2005-10-21 | 2006-03-22 | 贵州久联民爆器材发展股份有限公司 | Semiconductor electric detonator |
| CN103644786A (en) * | 2013-12-03 | 2014-03-19 | 桂林航天电子有限公司 | High-voltage ignition relay and operating method thereof |
| CN105698617A (en) * | 2016-01-25 | 2016-06-22 | 北京理工大学 | Electronic detonator controlled through detonation controller and control method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109141146A (en) * | 2018-10-17 | 2019-01-04 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electromagnetism interference electrion plasma ignition utensil |
| CN109141146B (en) * | 2018-10-17 | 2023-10-03 | 山西宸润隆科技有限责任公司 | Safety electric detonator of electromagnetic interference resistant high-voltage discharge plasma ignition device |
| CN109297375A (en) * | 2018-11-10 | 2019-02-01 | 赵伽文 | A kind of circuit board side input and output electron excitation conductive material ignition method |
| CN109297375B (en) * | 2018-11-10 | 2023-08-08 | 赵伽文 | Method for igniting side input/output electronic excitation conductive material of circuit board |
| CN111290012A (en) * | 2020-02-25 | 2020-06-16 | 四川美创达电子科技有限公司 | Ignition control system for seismic source bomb |
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| Publication number | Publication date |
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| CN108627056B (en) | 2021-02-12 |
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