CN101672612B

CN101672612B - Plasma ejection igniter

Info

Publication number: CN101672612B
Application number: CN 200910044450
Authority: CN
Inventors: 费凡; 李爱夫
Original assignee: 李爱夫
Current assignee: Central Hunan core Valley Technology Co., Ltd.
Priority date: 2009-09-16
Filing date: 2009-09-16
Publication date: 2013-06-05
Anticipated expiration: 2029-09-16
Also published as: CN101672612A

Abstract

The invention relates to a plasma ejection igniter, which is characterized by comprising a base provided with an upper concave pit and a lower concave pit which are formed by a top surface denting downwards, a polysilicon plasma ignition chip and an external protective cover; the chip and an electrode conductive piece thereof are encapsulated in the base; the upper top surface of the external protective cover is provided with an fire ejection port corresponding to the upper concave pit of the base; and the external protective cover is blocked outside the base. The traditional hot bridge wire ignition technology is replaced by a giant-heat and high-speed ejection polysilicon plasma particle ignition technology, and the mass blocks of the polysilicon is instantly melted from solid to liquid and then gasified into gas to form high-temperature and high-pressure impactive polysilicon plasma through the constraint of the two concave pits; the polysilicon plasma is constrained by the upper concave pit and enters a linear accelerating chamber to finish accelerated ejection. The igniter has low ignition energy, short ignition action time, is suitable for automatic large-scale production, can be used in high-temperature and high-pressure environments, and is safe and reliable.

Description

Plasma ejection igniter

Technical field

The present invention relates to a kind of igniter, particularly a kind of plasma ejection igniter.

Background technology

At present, in the igniter as civilian electric cap, ignition element is to adopt to wrap one deck chemical reagent on the heat bridge silk, by large electric current, the bridge silk is heated in the bridge silk, thereby the chemical reagent that will wrap on the bridge silk adds thermal ignition.The chemical reagent layer is manual application, be difficult to ensure the quality of products, and reaction speed is slow, and ignitor firing time is long, easily ignites poor stability in high temperature, hyperbaric environment.

Summary of the invention

The objective of the invention is in order to overcome above-mentioned weak point of the prior art, and provide a kind of volume little, action time is short, safety, reliable, the plasma ejection igniter that adaptive capacity to environment is strong.

for achieving the above object, the technical solution used in the present invention is: plasma ejection igniter is by rewinding shape concave-concave pit foundation seat, polysilicon plasma igniting chip, outer shield forms, be recessed into down successively in the middle of end face on pedestal, lower concave-concave hole, polysilicon plasma igniting chip is followed successively by monocrystalline substrate from bottom to top, the dielectric bottom, the polysilicon mass that thin layer is arranged outward, insulating medium layer, the metal film electrode pad, in the lower pit of die bonding in pedestal, its cathode lead is drawn by the inner chamber of pedestal bottom, chip, cathode lead is encapsulated in pedestal, on outer shield, the pit of the corresponding pedestal of end face has bocca, card covers on outside pedestal.

The present invention with the traditional heat bridge silk firing technique of polysilicon plasma particle firing technique replacement of huge heat, high velocity jet, has filled up domestic technique blank owing to adopting above design.the polysilicon mass accurately is positioned in the lower pit of pedestal, moment is by solid-state molten for liquid under the excitation of electric pulse, be gasificated into gaseous state by liquid state, and form high temperature via concave-concave hole constraint, high pressure, the polysilicon plasma of severe impact, the polysilicon plasma confinement that upper pit will be hemispherical injection enters the linear accelerating thorax and completes accelerating jetting, ignition energy≤1.5mJ, action time≤3 μ s ignites, the ignition energy that has overcome the heat bridge silk is high, long action time, reliability is low, the shortcomings such as poor anti jamming capability, volume is little, can carry out automatic mass production, be adapted to high temperature, use under the various environment such as high pressure, safety, reliably.

Description of drawings

Fig. 1 is structural representation of the present invention;

Fig. 2 is the A-A generalized section of Fig. 1;

Fig. 3 is polysilicon plasma igniting chip structure generalized section.

The specific embodiment

Now illustrated embodiment is made detailed description to the present invention by reference to the accompanying drawings.

as shown in the figure, plasma ejection igniter is by rewinding shape concave-concave hole injection moulding pedestal 1, polysilicon plasma igniting chip 2, outer shield 3 forms, the middle recessed circular upper pit 4 successively of end face on pedestal 1, square lower pit 5, polysilicon plasma igniting chip 2 is followed successively by monocrystalline substrate 6 from bottom to top, dielectric bottom 7, the polysilicon mass 8 that thin layer is arranged outward, insulating medium layer 9, metal film electrode pad 10, chip 2 is bonded in lower pit 5 in pedestal 1, its flat bent cathode lead 11 is drawn by the inner chamber of pedestal 1 bottom, chip 2, cathode lead 11 is encapsulated in pedestal 1, on outer shield 3, the pit of the corresponding pedestal 1 of end face has bocca 12, card covers on outside pedestal 1.

Claims

1. plasma ejection igniter, it is characterized in that it is by rewinding shape concave-concave pit foundation seat (1), polysilicon plasma igniting chip (2), outer shield (3) forms, be recessed into down successively in the middle of the upper end face of pedestal (1), lower pit (4), (5), polysilicon plasma igniting chip (2) is followed successively by monocrystalline substrate (6) from bottom to top, dielectric bottom (7), the polysilicon mass (8) that thin layer is arranged outward, insulating medium layer (9), metal film electrode pad (10), chip (2) is bonded in lower pit (5) in pedestal (1), its cathode lead (11) is drawn by the inner chamber of pedestal (1) bottom, chip (2), cathode lead (11) is encapsulated in pedestal (1), the pit of the upper corresponding pedestal of end face of outer shield (3) (1) has bocca (12), card covers on outside pedestal (1).