CN2854492Y - Semiconductor electric detonator - Google Patents
Semiconductor electric detonator Download PDFInfo
- Publication number
- CN2854492Y CN2854492Y CN 200520006380 CN200520006380U CN2854492Y CN 2854492 Y CN2854492 Y CN 2854492Y CN 200520006380 CN200520006380 CN 200520006380 CN 200520006380 U CN200520006380 U CN 200520006380U CN 2854492 Y CN2854492 Y CN 2854492Y
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- detonator
- semiconductor chip
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- semiconductor
- glass fabric
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Abstract
The utility model discloses a semiconductor electric detonator, which is an electric detonator consisting of leads, plastic plug, detonator casing, detonator reinforced cap, explosion powder, loose powder and base powder. A glass fiber base plate is connected with the bottom of the plastic plug of the electric detonator. A semiconductor chip is positioned on the bottom of the glass fiber base plate. Meanwhile, two metal electrodes on the semiconductor chip are connected with the leads through conductive metal wires respectively. The distance between the semiconductor chip end face and fire conductive-hole end face on the detonator reinforced cap is <= 5mm. Meanwhile, the offset distance of the semiconductor chip center and the central line of the fire conductive hole is <= +/-2mm. The utility model can greatly improve the safety performances of electric detonator products. The utility model has the advantages of perfect antistatic behavior, stray current resistance and electromagnetic radiation resistance, simple operation and safe application, but also enjoys the superiorties of high working credibility, short action time and excellent detonation consistence and so on.
Description
Technical field:
The utility model relates to a kind of semiconductor detonator, belongs to the electric cap technical field.
Background technology:
At present, the igniting of the commercial electric detonator ignition mechanism that is adopted in the prior art partly mainly is made up of electric heating bridge silk and medicament, in the manufacturing process of bridge silk and medicament owing to reasons such as raw material, production technology cause resistance, medicament sensitivity uniformity poor, medicament is misoperation easily under higher static, electromagnetic radiation, causes unsafe problems occurring in production, storage, transportation, the use.And along with the fast development of modern society, the radiation of the static that environment produces, stray electrical current, electromagnetic wave etc. and disturb increasing, ambient conditions becomes increasingly complex, therefore, the requirement of, anti-stray current antistatic in production, transportation, storage, use to commercial electric detonator, anti-electromagnetic-radiation ability is more and more higher.And therefore existing commercial electric detonator can not satisfy the needs of use owing to exist antistatic, anti-stray current, all poor problem of anti-electromagnetic-radiation ability.
Summary of the invention:
The purpose of this utility model is: provide a kind of antistatic, anti-stray current, anti-electromagnetic-radiation ability all than higher, and semiconductor electric detonator safe and convenient to use, to overcome the deficiencies in the prior art.
The utility model is achieved in that it comprises the lead (1) of forming electric cap, plastic plug (2), detonator shell (3), detonator stiffened cap (4), priming (5), bulk powder charge (6), bottom medicine (7), it is characterized in that: be connected with a glass fabric substrate (8) in the bottom of electric cap plastic plug (2), on the bottom surface of glass fabric substrate (8), be fixed with a semiconductor chip (9), and two metal electrodes on the semiconductor chip (9) are connected with lead (1) by conductive wire (14) respectively, the distance (L) of flash hole (10) end face on end face of its semiconductor chip (9) and the detonator stiffened cap (4) is: L≤5mm, and the offset distance (H) of the center of semiconductor chip (9) and flash hole (10) central axis is: H≤± 2mm.
The optimum distance (L) that the end face of semiconductor chip (9) and detonator stiffened cap (4) are gone up flash hole (10) end face is: L≤3mm, and the optimized migration of the center of semiconductor chip (9) and flash hole (10) central axis distance (H) is: H≤± 1mm.
On glass fabric substrate (8), also be fixed with two copper pool faces (11), on every copper pool face (11), be respectively equipped with a chip lead pad (12) and a detonator lead pad (13), lead (1) passes plastic plug (2) and glass fabric substrate (8) and is welded on respectively on the detonator lead pad (13) on the every copper pool face (11), all is being welded with the conductive wire (14) that is connected with metal electrode on the semiconductor chip (9) on each chip lead pad (12) respectively.
The thickness that is fixed on the two copper pool faces (11) on the glass fabric substrate (8) is 0.05～0.5 millimeter.
Be provided with a chip mounting groove (15) between two blocks of copper pool faces (11), the flute length of groove (15) is that 1.0 millimeters～3.0 millimeters, groove width are 0.3 millimeter～1.5 millimeters, groove is high and to moor the thickness of face (11) identical for copper; Being fixed on the chip mounting groove (15) that semiconductor chip (9) on the glass fabric substrate (8) is installed between two copper pool faces (11) locates.
Glass fabric substrate (8) be shaped as square or circle, its foursquare catercorner length or circular diameter all are: 4～6 millimeters, the thickness of glass fabric substrate (8) is: 1～3 millimeter.
Conductive wire (14) is preferably aluminium wire or spun gold.
Owing to adopted technique scheme, the ignition mechanism of the utility model usefulness semiconductor chip fabrication replaces the ignition mechanism of original bridge silk and medicament composition, and has found the relation of the optimum distance between the flash hole on semiconductor chip and the detonator stiffened cap by a large amount of tests.The security performance of Semiconductor Bridge Ignition mechanism aspect static, stray electrical current, electromagnetic radiation is superior more a lot of than the performance of metal bridge silk.And the new technology material that the detonator igniting blasting device uses has the temperature negative resistance charactertistic, and along with the increase of temperature, the semiconductive bridge resistance of its semiconductor chip reduces, and electric current is easier to be passed through.Scorching hot silicon plasma transfers energy in the priming by the microconvection heat exchange, has only the microsecond magnitude its action time, and is more faster to the heat conduction of ignition charge than electric heating bridge silk.Therefore, adopt the utility model can increase substantially the security of products energy.And because the utility model has found the relation of the optimum distance between the flash hole on semiconductor chip and the detonator stiffened cap, thereby the plasma of having avoided semiconductor chip to produce when the igniting outburst effectively can not arrive the problem of the priming in the detonator body by flash hole.Therefore, compared with prior art, the utility model not only has good antistatic, anti-stray current, anti-electromagnetic-radiation ability and advantage easy and simple to handle, safe in utilization, but also has the functional reliability height, action time is short and gets angry advantage such as high conformity.
Description of drawings:
Accompanying drawing 1 is a structural representation of the present utility model;
The specific embodiment:
Embodiment 1 of the present utility model: by assembling the mode of electric cap in the prior art with detonator stiffened cap 4, priming 5, bulk powder charge 6, bottom medicine 7 is contained in the detonator shell 3, and lead 1 is installed on the plastic plug 2, then in the bottom of electric cap plastic plug 2 fixedly connected on a glass fabric substrate 8, on the bottom surface of glass fabric substrate 8, fix a semiconductor chip 9, and on semiconductor chip 9 preparation two metal electrodes 12, its semiconductor chip 9 can adopt the semiconductor chip that is made with polycrystalline silicon material in the prior art, two metal electrodes 12 on the semiconductor chip 9 are connected with the lead 1 that passes glass fabric substrate 8 by conductive wire 14 respectively, and the plastic plug 2 that semiconductor chip 9 will be installed then is installed on the detonator shell 3; During installation, notice that the distance L with flash hole 10 end faces on the end face of semiconductor chip 9 and the detonator stiffened cap 4 is controlled at the scope of L≤5mm, and with the offset distance H of the center of semiconductor chip 9 and flash hole 10 central axis be controlled at H≤± scope of 2mm can make semiconductor electric detonator finished product of the present utility model.
During making, in order to make the detonator performance more reliable, preferably the distance L with flash hole 10 on the end face of semiconductor chip 9 and the detonator stiffened cap 4 is controlled at: the scope of L≤3mm is controlled at the center of semiconductor chip 9 and the offset distance H of flash hole 10 central axis: H≤± get final product in the scope of 1mm.
In order to make the detonator performance more reliable, when making, preferably the distance L with flash hole 10 on semiconductor chip 9 end faces and the detonator stiffened cap 4 is controlled at: the scope of L≤3mm is controlled at the center of semiconductor chip 9 and the offset distance H of flash hole 10 central axis: H≤± get final product in the scope of 1mm.
Used in the above-described embodiments conductive wire 14 preferably adopts aluminium wire or spun gold.
When using the utility model, only needing that lead 1 of the present utility model is connected traditional electric cap ignites on the power supply, after the utility model is connected the ignition power supply, the current impulse of the power supply semiconductor chip of flowing through makes its heating, and after making semiconductor chip vaporization evaporation, produce blast and form HTHP plasma impact body, the heat energy that produces by this plasma and the plasma of ejaculation act on the priming grain in the detonator by the flash hole on the detonator stiffened cap 4 10, light the explosive in the detonator body, thus detonating primer.
Claims (7)
1, a kind of semiconductor electric detonator, it comprises the lead (1) of forming electric cap, plastic plug (2), detonator shell (3), detonator stiffened cap (4), priming (5), bulk powder charge (6), bottom medicine (7), it is characterized in that: be connected with a glass fabric substrate (8) in the bottom of electric cap plastic plug (2), on the bottom surface of glass fabric substrate (8), be fixed with a semiconductor chip (9), and two metal electrodes on the semiconductor chip (9) are connected with lead (1) by conductive wire (14) respectively, the distance (L) of flash hole (10) end face on end face of its semiconductor chip (9) and the detonator stiffened cap (4) is: L≤5mm, and the offset distance (H) of the center of semiconductor chip (9) and flash hole (10) central axis is: H≤± 2mm.
2, semiconductor electric detonator according to claim 1, it is characterized in that: the optimum distance (L) that the end face of semiconductor chip (9) and detonator stiffened cap (4) are gone up flash hole (10) end face is: L≤3mm, and the optimized migration of the center of semiconductor chip (9) and flash hole (10) central axis distance (H) is: H≤± 1mm.
3, semiconductor electric detonator according to claim 1, it is characterized in that: on glass fabric substrate (8), also be fixed with two copper pool faces (11), on every copper pool face (11), be respectively equipped with a chip lead pad (12) and a detonator lead pad (13), lead (1) passes plastic plug (2) and glass fabric substrate (8) and is welded on respectively on the detonator lead pad (13) on the every copper pool face (11), all is being welded with the conductive wire (14) that is connected with metal electrode on the semiconductor chip (9) on each chip lead pad (12) respectively.
4, semiconductor electric detonator according to claim 3 is characterized in that: the thickness that is fixed on the two copper pool faces (11) on the glass fabric substrate (8) is 0.05～0.5 millimeter.
5, semiconductor electric detonator according to claim 3, it is characterized in that: be provided with a chip mounting groove (15) between two blocks of copper pool faces (11), the flute length of groove (15) is that 1.0 millimeters～3.0 millimeters, groove width are 0.3 millimeter～1.5 millimeters, groove is high and to moor the thickness of face (11) identical for copper; Being fixed on the chip mounting groove (15) that semiconductor chip (9) on the glass fabric substrate (8) is installed between two copper pool faces (11) locates.
6, according to claim 1 or 3 described semiconductor electric detonators, it is characterized in that: glass fabric substrate (8) be shaped as square or circle, its foursquare catercorner length or circular diameter all are: 4～6 millimeters, the thickness of glass fabric substrate (8) is: 1～3 millimeter.
7, according to claim 1 or 3 described semiconductor electric detonators, it is characterized in that: conductive wire (14) is aluminium wire or spun gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520006380 CN2854492Y (en) | 2005-10-28 | 2005-10-28 | Semiconductor electric detonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520006380 CN2854492Y (en) | 2005-10-28 | 2005-10-28 | Semiconductor electric detonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2854492Y true CN2854492Y (en) | 2007-01-03 |
Family
ID=37581128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520006380 Expired - Lifetime CN2854492Y (en) | 2005-10-28 | 2005-10-28 | Semiconductor electric detonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2854492Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100389299C (en) * | 2005-10-21 | 2008-05-21 | 贵州久联民爆器材发展股份有限公司 | Semiconductor electric detonator |
| CN103528445A (en) * | 2013-10-09 | 2014-01-22 | 北京理工大学 | Low-igniting-voltage miniature semiconductor bridge igniting assembly |
| CN105953667A (en) * | 2016-05-11 | 2016-09-21 | 北京煋邦数码科技有限公司 | Intelligent chip detonator adopting efficient and precise communication method |
-
2005
- 2005-10-28 CN CN 200520006380 patent/CN2854492Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100389299C (en) * | 2005-10-21 | 2008-05-21 | 贵州久联民爆器材发展股份有限公司 | Semiconductor electric detonator |
| CN103528445A (en) * | 2013-10-09 | 2014-01-22 | 北京理工大学 | Low-igniting-voltage miniature semiconductor bridge igniting assembly |
| CN103528445B (en) * | 2013-10-09 | 2015-07-08 | 北京理工大学 | Low-igniting-voltage miniature semiconductor bridge igniting assembly |
| CN105953667A (en) * | 2016-05-11 | 2016-09-21 | 北京煋邦数码科技有限公司 | Intelligent chip detonator adopting efficient and precise communication method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Effective date of abandoning: 20080521 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |