CN102249830B - Silicon-cup energy-accumulation Al/CuO composite film ignition bridge and ignition bridge array - Google Patents
Silicon-cup energy-accumulation Al/CuO composite film ignition bridge and ignition bridge array Download PDFInfo
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- CN102249830B CN102249830B CN 201110167772 CN201110167772A CN102249830B CN 102249830 B CN102249830 B CN 102249830B CN 201110167772 CN201110167772 CN 201110167772 CN 201110167772 A CN201110167772 A CN 201110167772A CN 102249830 B CN102249830 B CN 102249830B
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Abstract
The invention discloses a silicon-cup energy-accumulation Al/CuO composite film ignition bridge and an ignition bridge array. A silicon cup with equilateral tetragonal pyramid slopes is made on a silicon chip by an anisotropic etching technique. The ignition bridge is formed by superposing an upper electrode, a lower electrode and a dielectric layer, wherein two metal films with the same size in opposite directions are respectively used as the upper electrode and the lower electrode, and an Al/CuO composite film layer which has the same size and direction as the upper electrode metal film is sandwiched between the two metal films as the dielectric layer; the Al/CuO composite film layer is partially covered and superposed on the lower electrode metal film, and the upper electrode metal film is completely covered and superposed on the Al/CuO composite film layer; and an Au metal film or Cu metal film is made into a lead for connecting a plurality of silicon-cup energy-accumulation Al/CuO composite film ignition bridges, so that the silicon-cup energy-accumulation Al/CuO composite film ignition bridges are arranged to form an ignition array. The invention has the functions of high self anti-RF capability, strong ignition capability, and favorable integration level with other components of the initiating explosive device.
Description
Technical field
The invention belongs to the basi components field of electric spark workpiece, particularly a kind of silicon cup cumulative Al/CuO laminated film initiating bridge and initiating bridge arrays.
Background technology
Electric spark workpiece is energetic material burning and one of the Initial energy source commonly used that explodes; have a wide range of applications at weaponry and national economy field; such as mine blasting; safety protective air-sac; the mini-satellite propulsion system; the rocket motor ignition system, biography fire and propagation of explosion sequence, the trajectory correction of guided missile and the safety locking motion etc. of warhead.
Bridgewire EED is the most widely electric spark workpiece that uses.It is to lean on electric current by the fine metal bridge silk of certain resistance is arranged, and electric energy is by Joule-Lenz's law
Produce heat, the bridge silk is heated up reach scorching hot state, add heat bridge silk explosive on every side and make its blast.The bridge wire material of Bridgewire EED is generally nickel chromium triangle, constantan or platinoiridita etc., after electric current passes into the bridge silk, and electric energy energy transform into heat energy on the bridge silk, the efficiency of conversion of energy is lower.Bridgewire EED normally directly is welded on the bridge silk in two payment to a porter with scolding tin, and the effect of preventing RF is bad, and accidental ignition appears in the impact that easily is subject to the external electromagnetic ripple.Owing to being subjected to the restriction of working method, the integrated level of Bridgewire EED is bad simultaneously, is difficult to the integrated production of realization and other parts of priming system.
Semiconductive bridge (Semiconductor Bridge is called for short SCB) priming system refers to utilize semiconductor film or metal-semiconductor laminated film to make a class electric spark workpiece of ignition assembly.The mechanism of action of SCB is the microconvection effect of plasma body, when rushing electric current when promoting blood circulation to SCB, the bridge mould material is vaporized rapidly because of joule heating, under the effect of electric field, form weak plasma discharge, plasma body is diffused into rapidly in the pyrotechnics composition or high explosive that is adjacent, carry out rapidly heat transmission of the utmost point to pyrotechnics composition or high explosive, it is heated reaches kindling temperature and get angry.SCB has certain preventing RF characteristic, but electric conversion rate is lower, complex manufacturing technology, and production cost is higher, and often and between medicament leaves the slit when powder charge, and Fire Reliability remains further to be improved.
Thin film bridge is that metal is produced on on-chip a kind of membrane type initiating bridge by physics or chemical process, and its principle of work is that after the pontic energising, pontic is blasted through electrically heated, produces the plasma ignition medicament.Thin film bridge can be made of the MEMS processes, easily realizes and the integrated production of other parts of priming system, but similar with SCB to Bridgewire EED, it only relies on electric energy to add the heat bridge film, and energy conversion rate is low.
Summary of the invention
The object of the present invention is to provide novel silicon cup cumulative Al/CuO laminated film initiating bridge and take this silicon cup cumulative Al/CuO laminated film initiating bridge as the basis initiating bridge arrays.
The technical solution that realizes the object of the invention is: a kind of silicon cup cumulative Al/CuO laminated film initiating bridge, on silicon substrate, produce the silicon cup of positive cubic tapered slope with anisotropic corrosion technique, initiating bridge is by top electrode, lower electrode and dielectric layer are superimposed upon on the silicon cup and form, the metallic film of two-layer measure-alike opposite direction is respectively as top electrode and lower electrode, with top electrode metallic film size, direction all identical Al/CuO THIN COMPOSITE rete is clipped between the double layer of metal film as dielectric layer, the part of Al/CuO THIN COMPOSITE rete covers and is superimposed upon on the lower electrode metallic film, and the top electrode metallic film covers be superimposed upon on the Al/CuO THIN COMPOSITE rete fully.
A kind of take the initiating bridge arrays of silicon cup cumulative Al/CuO laminated film initiating bridge as the basis, be made into the some silicon cup cumulative Al/CuO laminated film initiating bridges of lead-in wire connection with Au metallic film or Cu metallic film and be arranged in the igniting array.
The present invention compared with prior art, its remarkable advantage: 1. the silicon cup formula cumulative structure of silicon cup cumulative Al/CuO laminated film initiating bridge makes initiating bridge energy when getting angry concentrate toward the silicon cup center, forms localized high temperature regions; 2. the contact area of silicon cup cumulative Al/CuO laminated film initiating bridge and silicon base is larger, and the Al/CuO laminated film dielectric layer that its dielectric cleaning structure comprises has certain dielectricity, has improved the ability of initiating bridge self preventing RF; 3. the chemical reaction of Al/CuO laminated film dielectric layer can strengthen the ignition ability of initiating bridge; 4. the MEMS manufacture craft of silicon cup cumulative Al/CuO laminated film initiating bridge has improved the integrated level with the priming system miscellaneous part.
Description of drawings
Fig. 1 is the vertical view of initiating bridge of the present invention.
Fig. 2 is the sectional elevation of initiating bridge of the present invention.
Fig. 3 is cubic pyramidal structure silicon cup sectional elevation.
Fig. 4 is the schematic diagram that initiating bridge arrays substrate of the present invention is made.
Fig. 5 is initiating bridge igniting array schematic diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
Any one initiating bridge of the present invention can be used for the single-point firing and initiation of electric spark workpiece, and the igniting array that any one initiating bridge forms can be used for electric spark workpiece multi-point spark system and Miniature detonator ignition system.
In conjunction with Fig. 1,2, silicon cup cumulative Al/CuO laminated film initiating bridge of the present invention, on silicon substrate, produce the silicon cup of positive cubic tapered slope with anisotropic corrosion technique, initiating bridge is by top electrode 1, lower electrode 2 and dielectric layer 3 are superimposed upon on the silicon cup and form, the metallic film of two-layer measure-alike opposite direction is respectively as top electrode 1 and lower electrode 2, with top electrode 1 metallic film size, direction all identical Al/CuO THIN COMPOSITE rete is clipped between the double layer of metal film as dielectric layer 3, the part of Al/CuO THIN COMPOSITE rete covers and is superimposed upon on lower electrode 2 metallic films, and top electrode 3 metallic films cover be superimposed upon on the Al/CuO THIN COMPOSITE rete fully.
Silicon cup cumulative Al/CuO laminated film initiating bridge of the present invention, described dielectric layer 3Al/CuO THIN COMPOSITE rete is the Al/CuO laminated film of some modulation periods, the design parameter of Al/CuO laminated film modulation period is: the thickness of Al film is 0.3-0.4 μ m, and the thickness of CuO film is 0.8-0.9 μ m.
Silicon cup cumulative Al/CuO laminated film initiating bridge of the present invention, described top electrode 1 metallic film, the selectable metal of lower electrode 2 metallic films are Al, Cu, Ti or Cr.
The present invention is made into the some silicon cup cumulative Al/CuO laminated film initiating bridges of lead-in wire connection with Au metallic film or Cu metallic film and is arranged in the igniting array take the initiating bridge arrays of silicon cup cumulative Al/CuO laminated film initiating bridge as the basis.
Summary of the invention mainly comprises following four aspects:
Silicon cup cumulative Al/CuO laminated film initiating bridge basic structure as shown in Figure 1, 2.
1. the silicon cup formula cumulative structure of silicon cup cumulative Al/CuO laminated film initiating bridge makes initiating bridge concentration of energy when getting angry form localized high temperature regions at the silicon cup center;
The basic structure of silicon cup cumulative Al/CuO laminated film initiating bridge as shown in Figure 1, 2.Utilize the anisotropic corrosion technology of silicon on silicon substrate, can process the silicon cup that drift angle is 70.52 ° positive cubic conical surface, utilize MEMS technique to make the cumulative initiating bridge at silicon cup.Initiating bridge can produce cavity effect when the energising after-fire, energy is concentrated toward the center of silicon cup, forms localized high temperature regions.Localized hyperthermia more easily makes energetic material reach burning-point or bursting point, thereby has improved the ignition ability of initiating bridge.
2. the contact area of silicon cup cumulative Al/CuO laminated film initiating bridge and silicon base is larger, and the Al/CuO laminated film dielectric layer that its dielectric cleaning structure comprises has certain dielectricity, has improved the ability of initiating bridge self preventing RF;
Silicon cup cumulative Al/CuO laminated film initiating bridge is positive cubic pyramidal structure, and is larger with the contact area of silicon base.As shown in Figure 1, 2, if the length of side of initiating bridge is 1mm, the contact surface area of flat film bridge and substrate is 1mm
2, and the contact area of silicon cup cumulative Al/CuO laminated film initiating bridge is 3.46mm
2, large contact area more is conducive to disperse stray current, improve preventing RF ability.
As shown in Figure 1, 2, silicon cup cumulative Al/CuO laminated film initiating bridge adopts the dielectric cleaning structure, metallic film is conductive electrode, and the Al/CuO laminated film is clipped between the double layer of metal film as dielectric layer, and specific inductivity can be adjusted by number modulation period of regulation and control Al/CuO laminated film.Metal film electrode can be selected the high resistance metal as required, such as Ni, Cr etc., also can select the low-resistance value metal, such as Al, Cu etc.When switching on to pontic, when external voltage is lower than the voltage breakdown of Al/CuO laminated film, initiating bridge is misfired, when external voltage is higher than the voltage breakdown of Al/CuO laminated film, can form electric field between the double layer of metal membrane electrode up and down, this electric field can allow instantaneous large-current to pass through pontic, promotes the thermopositive reaction of Al/CuO, and electrical explosion occurs.
3. the chemical reaction of Al/CuO laminated film dielectric layer can strengthen the ignition ability of initiating bridge;
Redox reaction can occur in Al and CuO intensely when heating, and emits a large amount of heat, and theoretical thermal discharge is 4067J/g.The present invention utilizes magnetron sputtering method to prepare the Al/CuO laminated film, and has determined the modulation period of its thermal discharge maximum by the DSC experiment.Be 1.2 μ m the modulation period of Al/CuO laminated film thermal discharge maximum, and wherein the thickness of Al film is 0.38 μ m, and the thickness of CuO film is 0.82 μ m, and thermal discharge is 2760J/g.For initiating bridge, can by increasing number modulation period of Al/CuO laminated film, come the thermal discharge of REINFORCED Al/CuO laminated film.When initiating bridge was realized electrical breakdown, electric current can produce joule heating, and pontic is heated up, and when reaching certain temperature, violent redox reaction occurs Al/CuO laminated film dielectric layer, discharges reaction heat.Therefore, when inputting identical electric energy, silicon cup cumulative Al/CuO laminated film initiating bridge has not only produced joule heating, but also discharges chemical reaction heat, has improved the ignition ability of initiating bridge.
4. the MEMS manufacture craft of silicon cup cumulative Al/CuO laminated film initiating bridge has improved the integrated level with the priming system miscellaneous part.
(1) single silica-based cumulative Al/CuO laminated film initiating bridge is made
Silicon substrate at 100 is produced Si
3N
4Mask utilizes the anisotropic etch of silicon technology to etch the silicon cup of positive cubic pyramidal structure as shown in Figure 3.Etching condition is:
The TMAH(Tetramethylammonium hydroxide of 5% mass concentration) etchant solution, 85 ℃ of corrosion temperatures when reaching predetermined depth, are used the AP (ammonium perchlorate) of 20% TMAH solution+1% instead, and 85 ℃ of temperature are modified half an hour time, reduce roughness.Use at last 70 ℃ strong phosphoric acid, remove Si
3N
4Mask.
The initiating bridge course of processing is:
With acetone and deionized water ultrasonic cleaning substrate 30min, put into 200 ℃ of baking ovens after in air, drying up and toast for subsequent use.(AZ5200) applies post-drying at substrate with the positivity reversal photoresist, carries out initial exposure and counter-rotating exposure after adding the mask of underlying metal film electrode, occurs the type profile of falling from power after the development.Plate the underlying metal film electrode with the substrate of magnetron sputtering after development, after plating is good substrate is put into acetone soln ultrasonic cleaning 30sec and remove cull, use again washed with de-ionized water, namely obtain complete underlying metal film electrode after the oven dry.Repeat above operation steps, produce respectively Al/CuO laminated film and upper strata metal film electrode and can obtain as shown in Figure 1 single silicon cup cumulative Al/CuO laminated film initiating bridge.
(2) silicon cup cumulative Al/CuO laminated film initiating bridge arrays is made
Make the making processes of the required silicon cup array of initiating bridge arrays as shown in Figure 4.
On the substrate that completes, utilize (1) identical step, can produce the silica-based cumulative Al/CuO laminated film initiating bridge of array, on this basis, produce lead-in wire, can obtain silicon cup cumulative Al/CuO laminated film initiating bridge arrays.
Single silicon cup cumulative Al/CuO laminated film initiating bridge
Silicon substrate at 100 is produced Si
3N
4Mask utilizes the anisotropic etch of silicon technology to etch the silicon cup of positive cubic pyramidal structure as shown in Figure 2, and the length of side is 1mm.Etching condition is: the TMAH(Tetramethylammonium hydroxide of 5% mass concentration) etchant solution, and 85 ℃ of corrosion temperatures are when reaching predetermined depth, use the AP (ammonium perchlorate) of 20% TMAH solution+1% instead, 85 ℃ of temperature, half an hour time, modify, reduce roughness.
The initiating bridge course of processing is: with acetone and deionized water ultrasonic cleaning substrate 30min, put into 200 ℃ of baking ovens after drying up and toast for subsequent use in air.(AZ5200) applies post-drying at substrate with the positivity reversal photoresist, carries out initial exposure and counter-rotating exposure after adding the mask of underlying metal film electrode, occurs the type profile of falling from power after the development.Plate the thick Cr metallic film of 2 μ m as top electrode with the substrate of magnetron sputtering after development, after plating is good substrate is put into acetone soln ultrasonic cleaning 30sec and remove cull, use again washed with de-ionized water, namely obtain complete underlying metal film electrode after the oven dry.Repeat above operation steps, produce 6 modulation periods the Al/CuO laminated film of (thickness is 7.2 μ m) as dielectric layer, the thick Cr metallic film of 2 μ m can obtain single silicon cup cumulative Al/CuO laminated film initiating bridge as shown in Figure 1, 2 as lower electrode.
This initiating bridge can be applicable to the single-point igniting of electric spark workpiece, also can be integrated with the priming system miscellaneous part, realize that point passes fire, propagation of explosion function.
Silicon cup cumulative Al/CuO laminated film initiating bridge is the igniting array of base unit
Silicon cup cumulative Al/CuO laminated film initiating bridge arrays all is to be made by fine process, can take embodiment 1 described a single point firebridge as the basis, make miniature igniting array.The structure of igniting array as shown in Figure 5.
The part of black is initiating bridge among Fig. 5, has formed 6 * 6 igniting units, can realize the independent ignition of igniting unit by the logic addressing circuit of igniting bus and unit.Logic addressing circuit material adopts Cu or Au film, and Cu or Au film have lower resistivity, and be less on the impact of initiating bridge, and the width of circuit is 50 μ m.Be similar to this logic addressing firing circuit, can be used for the igniting of micro-thruster system, also can be used for multi-point spark system and Miniature detonator ignition system etc.
Claims (4)
1. silicon cup cumulative Al/CuO laminated film initiating bridge, it is characterized in that: the silicon cup of on silicon substrate, producing positive cubic tapered slope with anisotropic corrosion technique, initiating bridge is by top electrode [1], lower electrode [2] and dielectric layer [3] are superimposed upon on the silicon cup and form, the metallic film of two-layer measure-alike opposite direction is respectively as top electrode [1] and lower electrode [2], with top electrode [1] metallic film size, direction all identical Al/CuO THIN COMPOSITE rete is clipped between the double layer of metal film as dielectric layer [3], the part of Al/CuO THIN COMPOSITE rete covers and is superimposed upon on lower electrode [2] metallic film, and top electrode [1] metallic film covers be superimposed upon on the Al/CuO THIN COMPOSITE rete fully.
2. the silicon cup cumulative Al/CuO laminated film initiating bridge under according to claim 1, it is characterized in that: described dielectric layer [3] Al/CuO THIN COMPOSITE rete is the Al/CuO laminated film of some modulation periods, the design parameter of Al/CuO laminated film modulation period is: the thickness of Al film is 0.3-0.4 μ m, and the thickness of CuO film is 0.8-0.9 μ m.
3. the silicon cup cumulative Al/CuO laminated film initiating bridge under according to claim 1, it is characterized in that: described top electrode [1] metallic film, the selectable metal of lower electrode [2] metallic film are Al, Cu, Ti or Cr.
One kind take silicon cup cumulative Al/CuO laminated film initiating bridge as the basis initiating bridge arrays, it is characterized in that: described silicon cup cumulative Al/CuO laminated film initiating bridge is: the silicon cup of producing positive cubic tapered slope on silicon substrate with anisotropic corrosion technique, initiating bridge is by top electrode [1], lower electrode [2] and dielectric layer [3] are superimposed upon on the silicon cup and form, the metallic film of two-layer measure-alike opposite direction is respectively as top electrode [1] and lower electrode [2], with top electrode [1] metallic film size, direction all identical Al/CuO THIN COMPOSITE rete is clipped between the double layer of metal film as dielectric layer [3], the part of Al/CuO THIN COMPOSITE rete covers and is superimposed upon on lower electrode [2] metallic film, and top electrode [1] metallic film covers be superimposed upon on the Al/CuO THIN COMPOSITE rete fully; Be made into the some silicon cup cumulative Al/CuO laminated film initiating bridges of lead-in wire connection with Au metallic film or Cu metallic film and be arranged in the igniting array.
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| CN103604325B (en) * | 2013-11-14 | 2015-10-28 | 电子科技大学 | A kind of high pressure plasma thin film switch and manufacture method thereof |
| CN104557353B (en) * | 2014-12-17 | 2017-11-21 | 中北大学 | A kind of Semiconductor Bridge of compound self-heating reflecting layer cumulative |
| CN104692318B (en) * | 2015-03-26 | 2016-08-24 | 中北大学 | Complex class black matrix cumulative structure containing can metal bridge film MEMS lighter and preparation method thereof |
| CN104925734B (en) * | 2015-04-13 | 2016-08-03 | 中北大学 | A kind of near field heat radiation efficient heat transfer is without powder charge MEMS ignition chip and preparation method thereof |
| CN106765308A (en) * | 2016-11-28 | 2017-05-31 | 中国电子科技集团公司第四十八研究所 | A kind of direct insertion membrane bridge igniter and preparation method thereof |
| CN111894762B (en) * | 2020-07-08 | 2021-09-21 | 南京理工大学 | Transient detonation pulse engine and radial multi-pulse thrust vector device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3742120A (en) * | 1970-10-28 | 1973-06-26 | Us Navy | Single layer self-destruct circuit produced by co-deposition of tungstic oxide and aluminum |
| CN1969167A (en) * | 2004-04-16 | 2007-05-23 | 日本化药株式会社 | Igniter and gas generator having the same |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter, and gas generator |
| CN201488668U (en) * | 2009-09-16 | 2010-05-26 | 衡阳晶体管有限公司 | Electric detonator with plasma ignition |
| CN202107645U (en) * | 2011-06-21 | 2012-01-11 | 南京理工大学 | Silicon cup energy-collecting Al/CuO composite film initiating bridge and initiating bridge arrays |
-
2011
- 2011-06-21 CN CN 201110167772 patent/CN102249830B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3742120A (en) * | 1970-10-28 | 1973-06-26 | Us Navy | Single layer self-destruct circuit produced by co-deposition of tungstic oxide and aluminum |
| CN1969167A (en) * | 2004-04-16 | 2007-05-23 | 日本化药株式会社 | Igniter and gas generator having the same |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter, and gas generator |
| CN201488668U (en) * | 2009-09-16 | 2010-05-26 | 衡阳晶体管有限公司 | Electric detonator with plasma ignition |
| CN202107645U (en) * | 2011-06-21 | 2012-01-11 | 南京理工大学 | Silicon cup energy-collecting Al/CuO composite film initiating bridge and initiating bridge arrays |
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