CN201262533Y - Semiconductor resistance bridge electrode plug - Google Patents
Semiconductor resistance bridge electrode plug Download PDFInfo
- Publication number
- CN201262533Y CN201262533Y CNU200820035298XU CN200820035298U CN201262533Y CN 201262533 Y CN201262533 Y CN 201262533Y CN U200820035298X U CNU200820035298X U CN U200820035298XU CN 200820035298 U CN200820035298 U CN 200820035298U CN 201262533 Y CN201262533 Y CN 201262533Y
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- electrode
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Abstract
The utility model discloses an electrode plug of a semiconductive resistance bridge. The electrode plug sticks a chip of the semiconductive bridge on an epoxy resin substrate by using epoxy glue; the two electrodes on the chip of the semiconductive bridge are respectively connected with two substrate electrodes on the epoxy resin substrate by virtue of metal wires; the epoxy resin substrate is installed at the top end of a polyvinyl plastic plug; the upper ends of two protruding leg wires on the polyvinyl plastic plug are threaded into two electrode holes of the epoxy resin substrate encapsulated with the chip of the semiconductive bridge; and the two leg wires are connected with the two substrate electrodes on the epoxy resin substrate by tin soldering, thus leading the two leg wires and the chip of the semiconductive bridge to form an electric pathway. The electrode plug has excellent performances of resisting electromagnetic wave, stray current and static electricity as well as the characteristic of fast action and good reliability when in use.
Description
Technical field
The utility model belongs to the electric detonation technology, particularly a kind ofly is used for the electrode plug that the semiconductive bridge chip is housed that the electric cap ignition and detonation is used.
Background technology
Present commercial electric detonator is to adopt the electrode plug of bridge silk formula as the ignition and detonation element.The bridge silk is the resistance wire of a root bead in two payment to a porter, when electric current passes through, and the heating of bridge silk, and the ignition charge of heat packs around the bridge silk, after the temperature of bridge silk reaches the ignition point of ignition charge, the explosive in ignition charge ignition and the detonating primer.Bridge-wire electric detonator exists significant disadvantages in use, and main problem is to be subjected to the influence of electromagnetic interference, static, stray electrical current easily and to produce performance change or accidental ignition.Exist the electromagnetic wave of various frequencies and power in the employed environment of electric cap, electromagnetic wave can produce induced-current directly or indirectly on the bridge silk, electric cap is worked the mischief.Static also always is present in the links such as detonator production, transportation, use, and static has high voltage, low-energy characteristics, forms powerful electric field between two electrodes of the energy of static or its electrode plug and all may make the electric cap accidental ignition.In order to address these problems; usually can on bridge-wire electric detonator, take some safeguard measures; as add measures such as low pass filter electromagnetic wave is protected; or design air crack, the measures such as connector of adopting the nonlinear resistance material to make protect static, but all can increase the complexity of structure.
The igniting element of employing new technology improves the trend that the electric cap security is development.Characteristics such as is a kind of new priming system technology with the semiconductive bridge chip as ignition element, has effect rapidly, and security is good.United States Patent (USP) 5831203 disclosed semiconductive bridge detonator resistance are 50 Ω, the semiconductive bridge chip be shaped as rectangle, safe current is little, security need improve.Electrode layer in the Chinese patent 1749686 disclosed semiconductive bridge detonators on the used epocel cloth substrate is a copper, and has only one side to be coated with copper electrode, and copper may be oxidized in storage process, the influence reliability.
The utility model content
The purpose of this utility model is to provide a kind of semiconductor resistor bridge electrode plug, and it can improve the security of electric cap under electromagnetic environment, static, stray electrical current, and it is reliable rapidly to do the time spent.
The technical solution that realizes the utility model purpose is: a kind of semiconductor resistor bridge electrode plug, the semiconductive bridge chip is bonded on the epoxy resin base plate with epoxy glue, and two electrodes on this semiconductive bridge chip link to each other with two electrode of substrate on the epoxy resin base plate with wire respectively; Epoxy resin base plate is contained in vinyon plug top, protruding in vinyon two payment to a porter upper end beyond the Great Wall penetrates in two electrode holes of the epoxy resin base plate of encapsulated semiconductor bridge chip, soldering connects two electrode of substrate on two payment to a porter and the epoxy resin base plate, makes two payment to a porter and semiconductive bridge chip constitute electric pathway.
The utility model compared with prior art, its remarkable advantage: replaced the effect of bridge silk with the semiconductive bridge chip, heavily doped polysilicon bridge district on the semiconductive bridge chip is a functional element, this polycrystalline silicon bridge is combined closely with monocrystal silicon substrate, the heat dispersion of monocrystalline silicon is suitable with the heat dispersion of pottery, the heat that electromagnetic wave, stray electrical current or static generated scatters and disappears fast by monocrystal silicon substrate, and heat is difficult for gathering makes the vaporization of polycrystalline silicon bridge form high-temperature plasma, and medicament can not catch fire.But during logical firing current, because the energy density of the electric energy of input is big, the polycrystalline silicon bridge can instant vaporization and is formed high-temperature plasma, is penetrated into medicament is got angry.Therefore this electric detonation element has the performance of good anti-electromagnetic wave, stray electrical current and static, but do the time spent have again effect rapidly, the characteristics of good reliability.Therefore, this technology is used all in civil area (as commercial electric detonator, safe automobile air bag igniter etc.) and army and is had wide practical use.
Below in conjunction with accompanying drawing the utility model is described in further detail.
Description of drawings
Fig. 1 is the structure chart according to the semiconductor resistor bridge electrode plug that the utility model proposes.
Fig. 2 is the vertical view according to the semiconductive bridge chip that the utility model proposes.
Fig. 3 is the A-A cutaway view of Fig. 2.
Fig. 4 is the vertical view according to the epoxy resin base plate of loading onto the semiconductive bridge chip that the utility model proposes.
The specific embodiment
In conjunction with Fig. 1, the utility model semiconductor resistor bridge electrode plug is that semiconductive bridge chip 3 usefulness epoxy glues are bonded on the epoxy resin base plate 2, and two electrodes 11,12 on this semiconductive bridge chip 3 link to each other with two electrode of substrate 18,19 on the epoxy resin base plate 2 with wire 6,7 respectively; Epoxy resin base plate 2 is contained in vinyon plug 1 top, protruding in two payment to a porter, 4,5 upper ends on the vinyon plug 1 penetrates in two electrode holes 16,17 of the epoxy resin base plate 2 of encapsulated semiconductor bridge chip 3, soldering connects two electrode of substrate 18,19 on two payment to a porter 4,5 and the epoxy resin base plate 2, make two payment to a porter 4,5 and semiconductive bridge chip 3 constitute electric pathway, promptly make semiconductor resistor bridge electrode plug.
In conjunction with Fig. 2 and Fig. 3, the substrate of the semiconductive bridge chip 3 of the utility model semiconductor resistor bridge electrode plug is a monocrystalline silicon 8, initial oxidation generates silicon dioxide layer 9 on monocrystalline silicon 8, with vapor deposition method deposit polysilicon layer 10, heavy doping boron or phosphorus then, mask lithography goes out the figure 13 of polysilicon again, and two metal electrodes of evaporation 11,12 then, electrode be aluminium or gold or successively by cadmium nickel silver constitute the metal electrode of multilayer, mask lithography goes out the figure of electrode 11,12 then.Scribing obtains single semiconductive bridge chip 3, and this semiconductive bridge chip 3 is that the length of side is the rectangle of 1.0～1.8mm, and the resistance of semiconductive bridge chip 3 is 2～5 Ω.
The figure 13 of polysilicon is provided with wedge angle 14, and this wedge angle helps reducing firing energy.
In conjunction with Fig. 4, the utility model semiconductor resistor bridge electrode plug designs on epoxy resin base plate 2 three metal areas, two of the edge is electrode of substrate 18,19, the manufacturing process of this electrode of substrate 18,19 is: be covered with layer of copper as underlying metal on epoxy resin base plate with printed circuit technology, thickness is 15～70 μ m, middle plating one deck nickel, and thickness is 1～5 μ m, re-plating one deck gold, thickness are 0.5～5 μ m.The gross thickness of electrode of substrate 18,19 is 16～80 μ m.Two electrode holes 16,17 on the epoxy resin base plate 2 are passed in payment to a porter 4,5, with scolding tin payment to a porter 4,5 are linked to each other with electrode of substrate 18,19 on the epoxy resin base plate 2.Metal areas 15 in the middle of the epoxy resin base plate 2 are that the length of side is the square of 0.8～1.6mm, and it act as the positioning chip bonding position, and metal level is favourable for the dissipation that static or electromagnetic wave produce heat, thereby help the security of electric cap.
Metal area design on the epoxy resin base plate 2 is the tow sides symmetries, and the metal area that also is the two sides is same.The thickness of this epoxy resin base plate 2 is 0.5～1.5mm, and the length of side is the square of 3～5mm.
Semiconductive bridge chip 3 usefulness epoxy glues are bonded on the epoxy resin base plate 2, with metal electrode 11,12 on wire 6, the 7 connection semiconductive bridge chips 3 and the electrode of substrate 18,19 on the epoxy resin base plate 2.Payment to a porter 4,5 upper ends outstanding on the vinyon plug 1 are penetrated two electrode holes 16,17 of the epoxy resin base plate 2 of encapsulated semiconductor bridge chip 3, and soldering connects the electrode of substrate 18,19 on payment to a porter and the epoxy resin base plate.Wire 6,7 is Si-Al wire or the spun gold of diameter 20～70 μ m.
Embodiment: the substrate of semiconductive bridge chip 3 is a monocrystalline silicon 8, initial oxidation generates the silicon dioxide layer 9 of one deck on monocrystalline silicon 8, use vapor deposition method deposit one deck polysilicon layer 10 again, heavy doping phosphorus then, mask lithography goes out the figure 13 of polysilicon, evaporation metal aluminium electrode 11,12 then, and mask lithography goes out the figure of electrode 11,12 again.Scribing obtains single semiconductive bridge chip 3, and this semiconductive bridge chip 3 is that the length of side is the square of 1.2mm, and the resistance of chip is 3 Ω.
Two V-arrangement wedge angles 14 are arranged on the figure 13 of polysilicon.
Design has three metal areas on epoxy resin base plate 2, and two of the edge is electrode of substrate 18,19.Two electrode holes 16,17 on the epoxy resin base plate 2 are passed in payment to a porter 4,5, with scolding tin payment to a porter 4,5 are linked to each other with electrode of substrate 18,19 on the epoxy resin base plate 2.A metal area 15 in the middle of the epoxy resin base plate 2 is that the length of side is the square of 1.2mm.
Metal area design on the epoxy resin base plate 2 is the tow sides symmetries, and the metal area that also is the two sides is same.The thickness of epoxy resin base plate 2 is 1.0mm, and the length of side is the square of 4mm.
Semiconductive bridge chip 3 usefulness epoxy glues are bonded on the epoxy resin base plate 2, every limit connects metal electrode 11,12 on the semiconductive bridge chips 3 and the electrode of substrate 18,19 on the epoxy resin base plate 2 with 2 one metal wires 6,7, and wire 6,7 is the Si-Al wire of diameter 30 μ m.
Payment to a porter 4,5 upper ends outstanding on the vinyon plug 1 are penetrated two electrode holes 16,17 of the epoxy resin base plate 2 of encapsulated semiconductor bridge chip 3, soldering connects the electrode of substrate 18,19 on payment to a porter and the epoxy resin base plate 2, promptly makes semiconductor resistor bridge electrode plug.
Claims (8)
1, a kind of semiconductor resistor bridge electrode plug, it is characterized in that: semiconductive bridge chip (3) is bonded on the epoxy resin base plate (2) with epoxy glue, and two electrodes (11,12) on this semiconductive bridge chip (3) use wire (6,7) to link to each other with two electrode of substrate (18,19) on the epoxy resin base plate (2) respectively; Epoxy resin base plate (2) is contained in vinyon plug (1) top, protruding in two payment to a porter (4,5) upper end on the vinyon plug (1) penetrates in two electrode holes (16,17) of the epoxy resin base plate (2) of encapsulated semiconductor bridge chip (3), soldering connects two electrode of substrate (18,19) on two payment to a porter (4,5) and the epoxy resin base plate (2), makes two payment to a porter (4,5) and semiconductive bridge chip (3) constitute electric pathway.
2, semiconductor resistor bridge electrode plug according to claim 1, it is characterized in that: the substrate of semiconductive bridge chip (3) is monocrystalline silicon (8), layer of silicon dioxide layer (9) at first is set on this monocrystalline silicon (8), one deck polysilicon layer (10) is set then, and two electrodes (11,12) are set on polysilicon layer (10).
3, semiconductor resistor bridge electrode plug according to claim 2, it is characterized in that: the length of side of semiconductive bridge chip (3) is the rectangle of 1.0～1.8mm, the resistance of chip is 2～5 Ω.
4, semiconductor resistor bridge electrode plug according to claim 2 is characterized in that: wedge angle (14) is set on the figure of polysilicon (13).
5, semiconductor resistor bridge electrode plug according to claim 2 is characterized in that: two electrodes (11,12) of semiconductive bridge chip (3) for aluminium the gold or successively by cadmium nickel silver constitute three layers metal electrode.
6, semiconductor resistor bridge electrode plug according to claim 1, it is characterized in that: the metal area tow sides symmetry on the epoxy resin base plate (2), three metal areas are set on epoxy resin base plate (2), two of the edge is electrode of substrate (18,19), this electrode of substrate (18,19) underlying metal is a copper, thickness is 15～70 μ m, and metallic intermediate layer is a nickel, and thickness is 1～5 μ m, the superficial layer metal is a gold, thickness is 0.5～5 μ m, and the thickness of this electrode of substrate (18,19) is 16～80 μ m; Metal area (15) in the middle of the epoxy resin base plate (2) is that the length of side is the square of 0.8～1.6mm, and this metal area (15) is the positioning area that semiconductive bridge chip (3) is installed, and semiconductive bridge chip (3) is installed on the metal area (15).
7, semiconductor resistor bridge electrode plug according to claim 6, it is characterized in that: the thickness of epoxy resin base plate (2) is 0.5～1.5mm, the length of side is the rectangle of 3～5mm.
8, semiconductor resistor bridge electrode plug according to claim 1 is characterized in that: wire (6,7) is Si-Al wire or spun gold, and the diameter of silk is 20～70 μ m, every limit electrode bonding 2～5 one metal wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820035298XU CN201262533Y (en) | 2008-05-08 | 2008-05-08 | Semiconductor resistance bridge electrode plug |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820035298XU CN201262533Y (en) | 2008-05-08 | 2008-05-08 | Semiconductor resistance bridge electrode plug |
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| Publication Number | Publication Date |
|---|---|
| CN201262533Y true CN201262533Y (en) | 2009-06-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU200820035298XU Expired - Fee Related CN201262533Y (en) | 2008-05-08 | 2008-05-08 | Semiconductor resistance bridge electrode plug |
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| CN (1) | CN201262533Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102853724A (en) * | 2012-10-08 | 2013-01-02 | 南京理工大学 | Transduction component with surface-mounted semi-conductive bridge for electric initiating explosive device |
| CN102944138A (en) * | 2012-11-21 | 2013-02-27 | 南京理工大学 | Semiconductor bridge energy conversion chip for electro-explosive device |
| CN103499251A (en) * | 2013-10-09 | 2014-01-08 | 北京理工大学 | Micro asymmetric ceramic electrode plug |
| CN104296602A (en) * | 2014-10-13 | 2015-01-21 | 北京理工北阳爆破工程技术有限责任公司 | PCB (printed circuit board) type low-voltage semiconductor-bridge ignition assembly |
| CN105552044A (en) * | 2016-02-04 | 2016-05-04 | 无锡天和电子有限公司 | Package structure and package process of surface mounted resistance bridge |
| CN108426489A (en) * | 2018-04-09 | 2018-08-21 | 陕西航晶微电子有限公司 | A kind of semiconductor bridge chip and its encapsulating structure |
| CN108502842A (en) * | 2018-03-26 | 2018-09-07 | 北京理工大学 | A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security |
| CN109141146A (en) * | 2018-10-17 | 2019-01-04 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electromagnetism interference electrion plasma ignition utensil |
-
2008
- 2008-05-08 CN CNU200820035298XU patent/CN201262533Y/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102853724A (en) * | 2012-10-08 | 2013-01-02 | 南京理工大学 | Transduction component with surface-mounted semi-conductive bridge for electric initiating explosive device |
| CN102853724B (en) * | 2012-10-08 | 2014-06-25 | 南京理工大学 | Transduction component with surface-mounted semi-conductive bridge for electric initiating explosive device |
| CN102944138A (en) * | 2012-11-21 | 2013-02-27 | 南京理工大学 | Semiconductor bridge energy conversion chip for electro-explosive device |
| CN103499251A (en) * | 2013-10-09 | 2014-01-08 | 北京理工大学 | Micro asymmetric ceramic electrode plug |
| CN103499251B (en) * | 2013-10-09 | 2015-07-29 | 北京理工大学 | A kind of miniature asymmetric ceramic electrode plug |
| CN104296602A (en) * | 2014-10-13 | 2015-01-21 | 北京理工北阳爆破工程技术有限责任公司 | PCB (printed circuit board) type low-voltage semiconductor-bridge ignition assembly |
| CN105552044A (en) * | 2016-02-04 | 2016-05-04 | 无锡天和电子有限公司 | Package structure and package process of surface mounted resistance bridge |
| CN105552044B (en) * | 2016-02-04 | 2018-04-17 | 无锡天和电子有限公司 | The encapsulating structure and packaging technology of surface installing type resistance bridge |
| CN108502842A (en) * | 2018-03-26 | 2018-09-07 | 北京理工大学 | A kind of micro electronmechanical combinational logic device and preparation method thereof applied to fuse security |
| CN108426489A (en) * | 2018-04-09 | 2018-08-21 | 陕西航晶微电子有限公司 | A kind of semiconductor bridge chip and its encapsulating structure |
| CN109141146A (en) * | 2018-10-17 | 2019-01-04 | 山西宸润隆科技有限责任公司 | The safe electric detonator of electromagnetism interference electrion plasma ignition utensil |
| CN109141146B (en) * | 2018-10-17 | 2023-10-03 | 山西宸润隆科技有限责任公司 | Safety electric detonator of electromagnetic interference resistant high-voltage discharge plasma ignition device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 Termination date: 20130508 |