CN209055019U - The Semiconductor Bridge Initiator device of multilayer circuit board combination - Google Patents
The Semiconductor Bridge Initiator device of multilayer circuit board combination Download PDFInfo
- Publication number
- CN209055019U CN209055019U CN201822249904.4U CN201822249904U CN209055019U CN 209055019 U CN209055019 U CN 209055019U CN 201822249904 U CN201822249904 U CN 201822249904U CN 209055019 U CN209055019 U CN 209055019U
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- electrode
- middle layer
- lower electrode
- semiconductor bridge
- circuit board
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Abstract
The utility model discloses a kind of Semiconductor Bridge Initiator devices of multilayer circuit board combination, it is characterized in that, including circular ring shape top electrode (1), middle layer (2) and lower electrode (3), the middle layer (2) is located between top electrode (1) and lower electrode (3), the middle layer (2) includes middle layer top first electrode (7), middle layer top second electrode (8), middle layer lower electrode (9), semiconductor bridge chip (4), it is electrically connected hole (6), middle layer top first electrode (7) is electrically connected with top electrode (1), the semiconductor bridge chip (4) is located between middle layer top first electrode (7) and middle layer top second electrode (8) and realizes the electrical connection of the two, middle layer top second electrode (8) by electrical connection hole (6) and middle layer lower electrode ( 9) it connects, middle layer lower electrode (9) is electrically connected with lower electrode (3).
Description
Technical field
The utility model relates to the semiconductive bridge firers that priming system technical field more particularly to a kind of multilayer circuit board combine
Product device.
Background technique
The transducing igniting element of electric initiating explosive device mainly uses metal bridge wire, metal bridge band or resistance bridge film as transducing at present
Element, when electric current passes through this kind of inverting element, their common features can convert electrical current into heat transfer to being wrapped in
The Loading Materials for Initiating Explosive Devices of surrounding, when heat, which reaches, lights Loading Materials for Initiating Explosive Devices, Loading Materials for Initiating Explosive Devices is under fire, and this kind of inverting element is in the function of current
Shi Wendu raising-resistance increase-electric current reduction belongs to negative-feedback circuit, therefore comparatively, required input electricity is big, effect when
Between it is long.
The advantages of metal bridge wire is cheap, but its mechanical sensitivity performance is poor, security performance is not high and long action time.
This kind of priming system of existing electric igniter, electric primer is all using igniter wire as inverting element, in core pole and shell
Welded wire technology difficulty is big, is not easy to mass production, therefore the poor reliability of product.
Utility model content
The utility model provides a kind of Semiconductor Bridge Initiator element that circuit board is directly connected to, the electrode of printed circuit board
The electrode surface of face and electro explosive device is directly connected to, and centre does not need to be connected with conducting wire.
Realize the technical solution of the utility model aim are as follows: a kind of Semiconductor Bridge Initiator of multilayer circuit board combination
Device, including circular ring shape top electrode, middle layer and lower electrode, the middle layer are located between top electrode and lower electrode, it is described in
Interbed includes middle layer top first electrode, middle layer top second electrode, middle layer lower electrode, semiconductor bridge chip, electricity
Connecting hole, middle layer top first electrode are electrically connected with top electrode, and the semiconductor bridge chip is located at middle layer top
Between one electrode and middle layer top second electrode and the electrical connection both realized, middle layer top second electrode pass through electrical connection
Hole is connect with middle layer lower electrode, and middle layer lower electrode is electrically connected with lower electrode.
Further, the semiconductor bridge chip and middle layer top first electrode and middle layer top second electrode
Between respectively pass through soldering realize electrical connection.
Further, the inside of circular ring shape top electrode is equipped with Loading Materials for Initiating Explosive Devices.
The utility model compared with prior art, advantage are as follows:
The utility model semiconductor bridge chip low, high reliablity characteristic with ignition energy, the growth of semiconductive bridge bridge zone
It in silicon plane, therefore is particularly conducive to radiate, have a safety feature, mechanical sensitivity is also especially good, it is suitble to be mass produced, and produces
Product consistency of performance is good, and the assembling structure of multilayer circuit board not only may be implemented the welding procedure of semiconductive bridge electrical connection and lead to
The broad-mouthed receptacle for holding liquid that upper layer circuit board aperture forms dress Loading Materials for Initiating Explosive Devices is crossed, and by upper, lower circuit plate carries two end electrodes, connects input electricity
Source, such structure are convenient for forming the firer's accessory for having standalone feature.
Other than objects, features and advantages described above, there are also other purposes, feature and excellent for the utility model
Point.Below with reference to accompanying drawings, the utility model is described in further detail.
Detailed description of the invention
Fig. 1 is the Semiconductor Bridge Initiator device cross-sectional view of the utility model multilayer circuit board combination.
Fig. 2 is middle layer top view.
Fig. 3 is middle layer cross-sectional view.
Fig. 4 is middle layer bottom view.
Specific embodiment
With reference to the accompanying drawings of the specification, the utility model is further described.
In conjunction with Fig. 1-4, a kind of Semiconductor Bridge Initiator device of multilayer circuit board combination, including circular ring shape top electrode 1, in
Interbed 2 and lower electrode 3, the middle layer 2 are located between top electrode 1 and lower electrode 3, and the middle layer 2 includes middle layer top
First electrode 7, middle layer top second electrode 8, middle layer lower electrode 9, semiconductor bridge chip 4, electrical connection hole 6, it is described in
Interbed top first electrode 7 is electrically connected with top electrode 1, and the semiconductor bridge chip 4 is located at middle layer top first electrode 7 in
Between interbed top second electrode 8 and the electrical connection both realized, middle layer top second electrode 8 is by electrical connection hole 6 in
Interbed lower electrode 9 connects, and middle layer lower electrode 9 is electrically connected with lower electrode 3.
Further, the semiconductor bridge chip 4 and the second electricity of middle layer top first electrode 7 and middle layer top
Electrical connection is realized by soldering 5 respectively between pole 8.
Further, the inside of circular ring shape top electrode 1 is equipped with Loading Materials for Initiating Explosive Devices.
After top electrode 1 and lower electrode 3 power on, top electrode 1 passes through middle layer top first electrode 7, soldering 5 and half
Conductor bridge chip 4 realizes electrical connection, and lower electrode 3 passes through middle layer lower electrode 9, electrical connection hole 6, middle layer top second electrode
8 and the realization of soldering 5 and semiconductor bridge chip 4 be electrically connected, the ignition of semiconductor bridge chip 4 is ignited the fire inside circular ring shape top electrode 1
Work medicament realizes igniting.
The above descriptions are merely preferred embodiments of the present invention, is not intended to limit the utility model, for this
For the technical staff in field, various modifications and changes may be made to the present invention.It is all in the spirit and principles of the utility model
Within, any modification, equivalent replacement, improvement and so on should be included within the scope of protection of this utility model.
Claims (3)
1. a kind of Semiconductor Bridge Initiator device of multilayer circuit board combination, which is characterized in that including circular ring shape top electrode (1),
Middle layer (2) and lower electrode (3), the middle layer (2) are located between top electrode (1) and lower electrode (3), the middle layer (2)
Including middle layer top first electrode (7), middle layer top second electrode (8), middle layer lower electrode (9), semiconductive bridge core
Piece (4), electrical connection hole (6), middle layer top first electrode (7) are electrically connected with top electrode (1), the semiconductor bridge chip
(4) between middle layer top first electrode (7) and middle layer top second electrode (8) and the electrical connection both realized, in
Interbed top second electrode (8) by be electrically connected hole (6) connect with middle layer lower electrode (9), middle layer lower electrode (9) and
Lower electrode (3) electrical connection.
2. the Semiconductor Bridge Initiator device of multilayer circuit board combination according to claim 1, which is characterized in that described half
Pass through tin respectively between conductor bridge chip (4) and middle layer top first electrode (7) and middle layer top second electrode (8)
It welds (5) and realizes electrical connection.
3. the Semiconductor Bridge Initiator device of multilayer circuit board combination according to claim 1 or 2, which is characterized in that circle
The inside of annular upper electrode (1) is equipped with Loading Materials for Initiating Explosive Devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822249904.4U CN209055019U (en) | 2018-12-29 | 2018-12-29 | The Semiconductor Bridge Initiator device of multilayer circuit board combination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822249904.4U CN209055019U (en) | 2018-12-29 | 2018-12-29 | The Semiconductor Bridge Initiator device of multilayer circuit board combination |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209055019U true CN209055019U (en) | 2019-07-02 |
Family
ID=67055384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822249904.4U Active CN209055019U (en) | 2018-12-29 | 2018-12-29 | The Semiconductor Bridge Initiator device of multilayer circuit board combination |
Country Status (1)
| Country | Link |
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| CN (1) | CN209055019U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267651A (en) * | 2021-12-21 | 2022-04-01 | 北京智芯传感科技有限公司 | Bridge diaphragm type energy conversion element packaging structure in reserved medicine loading chamber form |
-
2018
- 2018-12-29 CN CN201822249904.4U patent/CN209055019U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267651A (en) * | 2021-12-21 | 2022-04-01 | 北京智芯传感科技有限公司 | Bridge diaphragm type energy conversion element packaging structure in reserved medicine loading chamber form |
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