CN101672611A - Plasma ignition electric detonator - Google Patents

Plasma ignition electric detonator Download PDF

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Publication number
CN101672611A
CN101672611A CN200910044448A CN200910044448A CN101672611A CN 101672611 A CN101672611 A CN 101672611A CN 200910044448 A CN200910044448 A CN 200910044448A CN 200910044448 A CN200910044448 A CN 200910044448A CN 101672611 A CN101672611 A CN 101672611A
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CN
China
Prior art keywords
polysilicon
chip
pedestal
base
plasma
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Granted
Application number
CN200910044448A
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Chinese (zh)
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CN101672611B (en
Inventor
费凡
李爱夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Hunan core Valley Technology Co., Ltd.
Original Assignee
HENGYANG TRANSISTOR CO Ltd
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Priority to CN 200910044448 priority Critical patent/CN101672611B/en
Publication of CN101672611A publication Critical patent/CN101672611A/en
Application granted granted Critical
Publication of CN101672611B publication Critical patent/CN101672611B/en
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Abstract

The invention relates to a plasma ignition electric detonator, which is characterized in that an ignition device comprises a base provided with an upper concave pit and a lower concave pit which are formed by a top surface denting downwards, a polysilicon plasma ignition chip and an external protective cover; the chip is stuck in the lower concave pit of the base; the chip and an electrode conductive piece thereof are encapsulated in the base; the upper top surface of the external protective cover is provided with an fire ejection port corresponding to the upper concave pit of the base; and the external protective cover is blocked outside the base. Under the action of electric pulse excitation, the mass blocks of the polysilicon is instantly melted from solid to liquid and then gasified into gas to form high-temperature and high-pressure polysilicon impactive plasma through the constraint of the two concave pits; the polysilicon plasma which is hemispherically ejected is constrained bythe upper concave pit and enters a linear accelerating chamber to finish accelerated ejection so as to ignite the detonator instantly. The invention has short action time, improves the anti-interference ability, has safety and reliability, can be used in different environments, and is suitable for automatic large-scale production.

Description

Plasma ignition electric detonator
Technical field
The present invention relates to a kind of electric cap, particularly a kind of plasma ignition electric detonator.
Background technology
At present, in the igniter of civilian electric cap, ignition element is to adopt to wrap one deck chemical reagent on the heat bridge silk, by big electric current the bridge silk is heated point of ignition gunpowder, priming, bulk powder charge, bottom medicine successively in the bridge silk, last blasting cap detonation.Because flare radioactivity spherical in shape in the detonator cavity of point of ignition gunpowder is freely transmitted, and has only the small part flare to transmit energy by flash hole, so the detonative action overlong time.In addition, because ignition charge, the priming of electric cap are to adopt very responsive chemistry to want agent formulated, very responsive to extraneous factors such as electrostatic induction, electromagnetic radiation, ionising radiation, electromagnetic wave and stray electrical currents, cause the explosion accident that in production, transportation, storage, use, meets accident easily, can not satisfy the varying environment instructions for use.
Summary of the invention
The objective of the invention is in order to overcome the above-mentioned weak point of prior art, and provide a kind of detonative action time short, safety, reliable adapts to the plasma ignition electric detonator that varying environment is used.
The object of the present invention is achieved like this: plasma ignition electric detonator comprises shell, the bottom medicine, bulk powder charge, priming, on the strengthening cap of flash hole is arranged, the igniter that it is characterized in that it is by rewinding shape concave-concave pit foundation seat, polysilicon plasma igniting chip, outer shield is formed, flash hole place on the pedestal on the middle corresponding strengthening cap of end face is recessed into down successively, following concave-concave hole, polysilicon plasma igniting chip is followed successively by monocrystalline substrate from bottom to top, the dielectric bottom, the polysilicon mass that thin layer is arranged outward, insulating medium layer, the metal film electrode pad, in the following pit of die bonding in pedestal, its cathode lead is drawn by the inner chamber of pedestal bottom, chip, cathode lead is encapsulated in the pedestal, the pit of the corresponding pedestal of end face has bocca on the outer shield, card covers on outside the pedestal, and igniter is sealed after being inserted by the shell opening part.
The present invention is owing to adopt above design, during use, connect power supply, under the excitation of electric pulse, polysilicon mass moment is by solid-state molten for liquid, be gasificated into gaseous state by liquid state, and via concave-concave hole constraint formation high temperature, high pressure, the polysilicon plasma of severe impact, the polysilicon plasma confinement that last pit then will be hemispherical injection enters straight line and quickens thorax and finish accelerating jetting, by flash hole moment detonating primer, detonative action time≤1.5 μ s has increased substantially antistatic simultaneously, stray electrical current, the ability of electromagnetic radiation, safety, reliably, be adapted to varying environment and use, can carry out automatic mass production.Polysilicon plasma particle firing technique with huge heat, high velocity jet replaces traditional heat bridge silk firing technique, has filled up the domestic technique blank.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the A-A generalized section of Fig. 1;
Fig. 3 is a polysilicon plasma igniting chip structure generalized section.
The specific embodiment
Now illustrated embodiment is made detailed description to the present invention in conjunction with the accompanying drawings.
As shown in the figure, plasma ignition electric detonator comprises shell 1, pack into the successively bottom medicine 2 of shell 1, bulk powder charge 3, priming 4, on the strengthening cap 6 of flash hole 5 is arranged, its igniter is by rewinding shape concave-concave pit foundation seat 7, polysilicon plasma igniting chip 8, outer shield 9 is formed, the recessed successively circular pit 10 of going up in flash hole 5 places on the corresponding strengthening cap 6 in the middle of the end face on the pedestal 7, square pit 11 down, polysilicon plasma igniting chip 8 is followed successively by monocrystalline substrate 12 from bottom to top, dielectric bottom 13, the polysilicon mass 14 that thin layer is arranged outward, insulating medium layer 15, metal film electrode pad 16, chip 8 is bonded in the following pit 11 in the pedestal 7, its flat bent cathode lead 17 is drawn by the inner chamber of pedestal 7 bottoms, chip 8, cathode lead 17 is encapsulated in the pedestal 7, the pit of the corresponding pedestal 7 of end face has bocca 18 on the outer shield 9, card covers on outside the pedestal 7, and igniter is sealed after being inserted by shell 1 opening part.

Claims (1)

1, a kind of plasma ignition electric detonator, comprise shell (1), bottom medicine (2), bulk powder charge (3), priming (4), on the strengthening cap (6) of flash hole (5) is arranged, the igniter that it is characterized in that it is by rewinding shape concave-concave pit foundation seat (7), polysilicon plasma igniting chip (8), outer shield (9) is formed, the flash hole (5) that pedestal (7) is gone up on the middle corresponding strengthening cap of end face (6) is located to be recessed into down successively, following concave-concave hole (10), (11), polysilicon plasma igniting chip (8) is followed successively by monocrystalline substrate (12) from bottom to top, dielectric bottom (13), the polysilicon mass (14) that thin layer is arranged outward, insulating medium layer (15), metal film electrode pad (16), chip (8) is bonded in the following pit (11) in the pedestal (7), its cathode lead (17) is drawn by the inner chamber of pedestal (7) bottom, chip (8), cathode lead (17) is encapsulated in the pedestal (7), the pit that outer shield (9) is gone up the corresponding pedestal of end face (7) has bocca (18), card covers on outside the pedestal (7), and igniter is sealed after being inserted by shell (1) opening part.
CN 200910044448 2009-09-16 2009-09-16 Plasma ignition electric detonator Active CN101672611B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910044448 CN101672611B (en) 2009-09-16 2009-09-16 Plasma ignition electric detonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200910044448 CN101672611B (en) 2009-09-16 2009-09-16 Plasma ignition electric detonator

Publications (2)

Publication Number Publication Date
CN101672611A true CN101672611A (en) 2010-03-17
CN101672611B CN101672611B (en) 2013-07-17

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102654381A (en) * 2012-04-27 2012-09-05 中国工程物理研究院流体物理研究所 Detonator explosion closing switch and electric gun composed of same
CN109141146A (en) * 2018-10-17 2019-01-04 山西宸润隆科技有限责任公司 The safe electric detonator of electromagnetism interference electrion plasma ignition utensil
CN113639599A (en) * 2021-08-19 2021-11-12 融硅思创(北京)科技有限公司 Ignition-powder-free digital electronic detonator

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905226A (en) * 1995-08-24 1999-05-18 Auburn University Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances
US6260483B1 (en) * 1998-04-24 2001-07-17 Richard N. Snyder Remote radio controlled plasma firing system
CN1749688A (en) * 2005-10-21 2006-03-22 贵州久联民爆器材发展股份有限公司 Method and device for igniting detonator
CN201488668U (en) * 2009-09-16 2010-05-26 衡阳晶体管有限公司 Electric detonator with plasma ignition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905226A (en) * 1995-08-24 1999-05-18 Auburn University Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances
US6260483B1 (en) * 1998-04-24 2001-07-17 Richard N. Snyder Remote radio controlled plasma firing system
CN1749688A (en) * 2005-10-21 2006-03-22 贵州久联民爆器材发展股份有限公司 Method and device for igniting detonator
CN201488668U (en) * 2009-09-16 2010-05-26 衡阳晶体管有限公司 Electric detonator with plasma ignition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102654381A (en) * 2012-04-27 2012-09-05 中国工程物理研究院流体物理研究所 Detonator explosion closing switch and electric gun composed of same
CN109141146A (en) * 2018-10-17 2019-01-04 山西宸润隆科技有限责任公司 The safe electric detonator of electromagnetism interference electrion plasma ignition utensil
CN109141146B (en) * 2018-10-17 2023-10-03 山西宸润隆科技有限责任公司 Safety electric detonator of electromagnetic interference resistant high-voltage discharge plasma ignition device
CN113639599A (en) * 2021-08-19 2021-11-12 融硅思创(北京)科技有限公司 Ignition-powder-free digital electronic detonator
CN113639599B (en) * 2021-08-19 2023-01-06 融硅思创(北京)科技有限公司 Ignition-powder-free digital electronic detonator

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Owner name: LI AIFU

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Address after: 421007 Hunan province Hengyang City Baishazhou Yanfeng District No. 7 Jia Tang Yi

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Applicant before: Hengyang Transistor Co., Ltd.

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Effective date of registration: 20180821

Address after: 421007 1 A5, mangrove R & D innovation area, Heng Mountain Science City, Yanfeng District, Hengyang, Hunan

Patentee after: Central Hunan core Valley Technology Co., Ltd.

Address before: 421007 Hengyang, Hunan, Yanfeng District, Baisha Island, Yi Jia Tang No. 7.

Patentee before: Li Aifu

TR01 Transfer of patent right