CN103499245A - Semiconductor bridge for ignition - Google Patents
Semiconductor bridge for ignition Download PDFInfo
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- CN103499245A CN103499245A CN201310501414.8A CN201310501414A CN103499245A CN 103499245 A CN103499245 A CN 103499245A CN 201310501414 A CN201310501414 A CN 201310501414A CN 103499245 A CN103499245 A CN 103499245A
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- semiconductor layer
- electrode
- metal level
- semiconductive bridge
- ignition
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Abstract
The invention discloses a semiconductor bridge for ignition. The semiconductor bridge for ignition comprises a substrate, an insulating layer depositing on the substrate, a semiconductor layer depositing on the insulating layer and a metal layer depositing on the semiconductor layer. A first electrode and a second electrode deposit on the metal layer. Pyrophoric substances further deposit on the metal layer. The semiconductor bridge for ignition has the advantages of being high in control precision and capable of being used repeatedly.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular a kind of semiconductive bridge for getting angry for igniting such as cannon ammunitions.
Background technology
Semiconductive bridge is a kind of semiconductor conducting function that utilizes, make semiconductor after energising and on the ignition material release energy rapidly and produce the micro element structure of the high heat of high temperature.The structure of existing semiconductive bridge is as shown in Fig. 2, and label 9 is silicon chip or blue empty ground mass sheet, and label 8 is silicon coating.Semiconductive bridge contains explosive, and the bridge silk device is implanted in silicon chip or blue empty ground mass sheet, and it has very high thermal conductivity.When a low current, when the bridge silk, its heat is by substrate absorption, when have high electric current by the time, because the bridge silk is tiny, thereby it is evaporated very soon, vapours is still continuing conduction, more and more hotter, final explosive blasting is also got angry.Adopt existing semiconductive bridge to get angry, because the control of vapours evaporation process time is difficult for holding, it controls effect is that the precision of the time of ignition is not high, the higher occasion for control accuracy, and it is not too applicable, and it can only realize once lighting a fire.
Summary of the invention
The invention provides a kind of semiconductive bridge for getting angry, its control accuracy is high, and can repeatedly reuse.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
For the semiconductive bridge of getting angry, it comprises substrate, be deposited on insulating barrier on substrate, be deposited on the semiconductor layer on insulating barrier and be deposited on the metal level on semiconductor layer, deposit the first electrode and the second electrode on described metal level, also deposit the ignition material on described metal level.
Further technical scheme is:
As preferably, described semiconductor layer is silicon.
As preferably, described the first electrode and the second electrode are copper or aluminium.
As preferably, described ignition material is metal oxide.
Further, described ignition material is cupric oxide or iron oxide.
As preferably, the thickness of described semiconductor layer is greater than 0.5 millimeter and be less than 1 millimeter.
Further, the thickness of described metal level is greater than the thickness of semiconductor layer.
The igniting that is mainly used in cannon ammunition etc. of the present invention, the positive feedback that while having utilized temperature to raise, semiconductor layer resistance reduces to cause.Principle of the present invention is: when giving the first electrode and the second electrifying electrodes, the metal level conductive exothermal, make the semiconductor layer temperature rising it under and resistance reduces, so electric current further increases, and temperature raises rapidly, makes the ignescent particle fire on it.Utilize the rising of conductor temperature to reach the purpose of igniting, its speed is greater than the speed of vapours.
Compared with prior art, the invention has the beneficial effects as follows:
1, the present invention utilizes the characteristic of semiconductor layer, after the first electrode and the second electrifying electrodes, can make temperature raise rapidly, and the material that makes to get angry is got angry, and its speed of ignition is fast, and the precision of controlling is improved.
2, the present invention can repeatedly utilize, and only need can reach the purpose of ignition to the first electrode and the second electrifying electrodes.
The accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is structural representation of the present invention.
The structural representation that Fig. 2 is existing semiconductive bridge.
Label in Fig. 1 is: 1, substrate; 2, insulating barrier; 3, semiconductor layer; 4, metal level; 5, the first electrode; 6, the second electrode; 7, ignition material.
The specific embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.Embodiments of the present invention include but not limited to the following example.
[embodiment]
The semiconductive bridge for getting angry as shown in Figure 1, it comprises substrate 1, be deposited on insulating barrier 2 on substrate 1, be deposited on the semiconductor layer 3 on insulating barrier 2 and be deposited on the metal level 4 on semiconductor layer 3, deposit the first electrode 5 and the second electrode 6 on described metal level 4, also deposit ignition material 7 on described metal level 4.
Described semiconductor layer 3 is silicon.
The first electrode and the second electrode effect play electric action, and described the first electrode 5 and the second electrode 6 are copper or aluminium.Copper or aluminium cheap, be easy to get, and electric conductivity is good, can reduce the price of whole semiconductive bridge.
Described ignition material 7 is metal oxide.
Described ignition material 7 is cupric oxide or iron oxide.
The temperature of semiconductor layer 3 raises, and makes resistance reduce, and in order effectively cannon ammunition to be lighted, the thickness of described semiconductor layer 3 is greater than 0.5 millimeter and be less than 1 millimeter.
The rising of metal level 4 temperature raises semi-conductive temperature, and on the speed that metal level 4 temperature the raise basis certain at voltage, relevant with resistance sizes, resistance is larger, and its electrothermal calefactive rate is slower; Resistance is less, and its electrothermal calefactive rate is faster.And the thickness of metal level 4 has determined the size of the resistance of metal level 4, thickness and resistance sizes are inversely proportional to, and for the power that makes metal level 4 is enough large, the thickness of described metal level 4 is greater than the thickness of semiconductor layer 3.
Insulating barrier 2 of the present invention can adopt silica, carborundum etc., and substrate 1 can adopt the materials such as silicon.1 pair of whole semiconductive bridge of substrate plays a supportive role, and insulating barrier is for isolated semiconductor layer and substrate 1.
The utilization of the present embodiment the principle of the temperature positive feedback that semiconductor layer resistance reduces to cause while raising, specific as follows:
When giving the first electrode and the second electrifying electrodes, the metal level conductive exothermal, make the semiconductor layer temperature rising it under and resistance reduces, so electric current further increases, and temperature raises rapidly, makes the ignescent particle fire on it.
Be as mentioned above embodiments of the invention.The present invention is not limited to above-mentioned embodiment, and anyone should learn the structural change of making under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, within all falling into protection scope of the present invention.
Claims (7)
1. the semiconductive bridge for getting angry, it is characterized in that: it comprises substrate (1), be deposited on insulating barrier (2) on substrate (1), be deposited on the semiconductor layer (3) on insulating barrier (2) and be deposited on the metal level (4) on semiconductor layer (3), deposit the first electrode (5) and the second electrode (6) on described metal level (4), also deposit ignition material (7) on described metal level (4).
2. the semiconductive bridge for getting angry according to claim 1, it is characterized in that: described semiconductor layer (3) is silicon.
3. the semiconductive bridge for getting angry according to claim 1, it is characterized in that: described the first electrode (5) and the second electrode (6) are copper or aluminium.
4. the semiconductive bridge for getting angry according to claim 1, it is characterized in that: described ignition material (7) is metal oxide.
5. the semiconductive bridge for getting angry according to claim 4, it is characterized in that: described ignition material (7) is cupric oxide or iron oxide.
6. the semiconductive bridge for getting angry according to claim 1 is characterized in that: the thickness of described semiconductor layer (3) is greater than 0.5 millimeter and be less than 1 millimeter.
7. the semiconductive bridge for getting angry according to claim 6, it is characterized in that: the thickness of described metal level (4) is greater than the thickness of semiconductor layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310501414.8A CN103499245A (en) | 2013-10-23 | 2013-10-23 | Semiconductor bridge for ignition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310501414.8A CN103499245A (en) | 2013-10-23 | 2013-10-23 | Semiconductor bridge for ignition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103499245A true CN103499245A (en) | 2014-01-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310501414.8A Pending CN103499245A (en) | 2013-10-23 | 2013-10-23 | Semiconductor bridge for ignition |
Country Status (1)
| Country | Link |
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| CN (1) | CN103499245A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112066817A (en) * | 2020-09-07 | 2020-12-11 | 深圳市开步电子有限公司 | Ignition resistor capable of enhancing firepower and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350631A (en) * | 1999-06-15 | 2002-05-22 | 恩赛-比克福德公司 | Voltage-protected semiconductor bridge igniter elements |
| US20030164106A1 (en) * | 2001-03-31 | 2003-09-04 | Roland Mueller-Fiedler | Bridge igniter |
| CN101036034A (en) * | 2004-10-04 | 2007-09-12 | 日本化药株式会社 | Semiconductor bridge circuit apparatus and igniter including the same |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter, and gas generator |
| CN203572337U (en) * | 2013-10-23 | 2014-04-30 | 成都市宏山科技有限公司 | Semiconductor bridge used for ignition |
-
2013
- 2013-10-23 CN CN201310501414.8A patent/CN103499245A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1350631A (en) * | 1999-06-15 | 2002-05-22 | 恩赛-比克福德公司 | Voltage-protected semiconductor bridge igniter elements |
| US20030164106A1 (en) * | 2001-03-31 | 2003-09-04 | Roland Mueller-Fiedler | Bridge igniter |
| CN101036034A (en) * | 2004-10-04 | 2007-09-12 | 日本化药株式会社 | Semiconductor bridge circuit apparatus and igniter including the same |
| CN101258378A (en) * | 2005-09-07 | 2008-09-03 | 日本化药株式会社 | Semiconductor bridge, igniter, and gas generator |
| CN203572337U (en) * | 2013-10-23 | 2014-04-30 | 成都市宏山科技有限公司 | Semiconductor bridge used for ignition |
Non-Patent Citations (1)
| Title |
|---|
| 张文超: "复合半导体桥电爆特性及桥温变化的研究", 《中国博士学位论文全文数据库（工程科技Ⅰ辑）》, no. 11, 15 November 2011 (2011-11-15) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112066817A (en) * | 2020-09-07 | 2020-12-11 | 深圳市开步电子有限公司 | Ignition resistor capable of enhancing firepower and manufacturing method thereof |
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Application publication date: 20140108 |