CN1748285B - 用于均匀加热基片的腔室 - Google Patents
用于均匀加热基片的腔室 Download PDFInfo
- Publication number
- CN1748285B CN1748285B CN200380109616.2A CN200380109616A CN1748285B CN 1748285 B CN1748285 B CN 1748285B CN 200380109616 A CN200380109616 A CN 200380109616A CN 1748285 B CN1748285 B CN 1748285B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- substrate
- heater
- chamber
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 229
- 238000010438 heat treatment Methods 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 claims description 49
- 238000007669 thermal treatment Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 24
- 230000008093 supporting effect Effects 0.000 claims description 24
- 238000011282 treatment Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 15
- 239000007767 bonding agent Substances 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 11
- 230000005855 radiation Effects 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 9
- 239000003344 environmental pollutant Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 231100000719 pollutant Toxicity 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 7
- 238000009434 installation Methods 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000010425 asbestos Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 229910052895 riebeckite Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005524 ceramic coating Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- -1 pottery Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000001089 thermophoresis Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 235000004443 Ricinus communis Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Liquid Crystal (AREA)
- Furnace Details (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43406402P | 2002-12-17 | 2002-12-17 | |
US60/434,064 | 2002-12-17 | ||
PCT/US2003/039783 WO2004061914A2 (fr) | 2002-12-17 | 2003-12-15 | Chambre permettant de chauffer un substrat de maniere uniforme |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1748285A CN1748285A (zh) | 2006-03-15 |
CN1748285B true CN1748285B (zh) | 2010-04-28 |
Family
ID=32713006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380109616.2A Expired - Lifetime CN1748285B (zh) | 2002-12-17 | 2003-12-15 | 用于均匀加热基片的腔室 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2006515433A (fr) |
KR (1) | KR101035828B1 (fr) |
CN (1) | CN1748285B (fr) |
AU (1) | AU2003297065A1 (fr) |
TW (1) | TWI279828B (fr) |
WO (1) | WO2004061914A2 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7326877B2 (en) * | 2004-12-01 | 2008-02-05 | Ultratech, Inc. | Laser thermal processing chuck with a thermal compensating heater module |
KR100707788B1 (ko) * | 2005-02-04 | 2007-04-13 | 주식회사 테라세미콘 | 박막 트랜지스터 액정표시장치 열처리방법 및 그 열처리장치 |
KR101073550B1 (ko) | 2009-10-29 | 2011-10-14 | 삼성모바일디스플레이주식회사 | 기판 열처리 장치 |
CN102300342A (zh) * | 2010-06-24 | 2011-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种载板加热装置及应用该装置的等离子体处理设备 |
US8517657B2 (en) * | 2010-06-30 | 2013-08-27 | WD Media, LLC | Corner chamber with heater |
CN102508381B (zh) * | 2011-11-29 | 2015-02-11 | 深圳市华星光电技术有限公司 | 一种用于液晶面板的烘烤设备 |
CN104269368A (zh) * | 2014-08-29 | 2015-01-07 | 沈阳拓荆科技有限公司 | 一种利用前端模块为晶圆加热的装置及方法 |
JP2019119903A (ja) * | 2017-12-28 | 2019-07-22 | キヤノントッキ株式会社 | 基板加熱装置及び成膜装置 |
JP7078752B2 (ja) * | 2018-12-27 | 2022-05-31 | 株式会社アルバック | 真空処理装置 |
CN112363335A (zh) * | 2020-11-12 | 2021-02-12 | 深圳市华星光电半导体显示技术有限公司 | 一种液晶面板烘烤设备 |
CN114959659B (zh) * | 2022-03-31 | 2023-11-28 | 松山湖材料实验室 | 用于样品加热的加热装置 |
WO2024144129A1 (fr) * | 2022-12-30 | 2024-07-04 | 주성엔지니어링(주) | Appareil de traitement de substrat et procédé de traitement de substrat |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5626680A (en) * | 1995-03-03 | 1997-05-06 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3474258B2 (ja) * | 1994-04-12 | 2003-12-08 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
KR100245260B1 (ko) * | 1996-02-16 | 2000-02-15 | 엔도 마코토 | 반도체 제조장치의 기판 가열장치 |
US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
-
2003
- 2003-12-15 JP JP2004565462A patent/JP2006515433A/ja not_active Withdrawn
- 2003-12-15 WO PCT/US2003/039783 patent/WO2004061914A2/fr active Application Filing
- 2003-12-15 CN CN200380109616.2A patent/CN1748285B/zh not_active Expired - Lifetime
- 2003-12-15 AU AU2003297065A patent/AU2003297065A1/en not_active Abandoned
- 2003-12-16 KR KR1020030091832A patent/KR101035828B1/ko active IP Right Grant
- 2003-12-16 TW TW92135659A patent/TWI279828B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5626680A (en) * | 1995-03-03 | 1997-05-06 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
Also Published As
Publication number | Publication date |
---|---|
KR20040054514A (ko) | 2004-06-25 |
KR101035828B1 (ko) | 2011-05-20 |
CN1748285A (zh) | 2006-03-15 |
TW200416798A (en) | 2004-09-01 |
WO2004061914A2 (fr) | 2004-07-22 |
AU2003297065A8 (en) | 2008-03-13 |
TWI279828B (en) | 2007-04-21 |
JP2006515433A (ja) | 2006-05-25 |
AU2003297065A1 (en) | 2004-07-29 |
WO2004061914A3 (fr) | 2008-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1293600C (zh) | 用于均匀加热衬底的腔室 | |
US6933009B2 (en) | Thin-film deposition method | |
US5674786A (en) | Method of heating and cooling large area glass substrates | |
JP3178824B2 (ja) | 複合形単一ウエーハ用の高生産性形マルチステーシヨン方式処理装置 | |
US7442900B2 (en) | Chamber for uniform heating of large area substrates | |
JP5813920B2 (ja) | 基板上に薄膜を蒸着する方法および基板のインライン真空処理のための装置 | |
JP4237939B2 (ja) | 基板加熱冷却を改良した真空処理装置 | |
CN1748285B (zh) | 用于均匀加热基片的腔室 | |
JP3252960B2 (ja) | 原子層エピタキシー工程のための半導体薄膜蒸着装置 | |
CN1149304C (zh) | 涂覆和退火大面积玻璃基底的方法 | |
US6149365A (en) | Support frame for substrates | |
CN102421934A (zh) | 高产量多晶片外延反应器 | |
KR102035833B1 (ko) | 처리 모듈 | |
US6998579B2 (en) | Chamber for uniform substrate heating | |
CN106716649A (zh) | 平行板式串联基板处理工具 | |
US20180127875A1 (en) | Apparatus for performing selenization and sulfurization process on glass substrate | |
JP4115331B2 (ja) | 基板処理装置 | |
KR101593493B1 (ko) | 대면적 유리기판 열처리 장치 | |
US20230245868A1 (en) | Holding device, and use of the holding device | |
JP2001102374A (ja) | 膜形成システム | |
KR20190011610A (ko) | 개선된 기판 열처리 챔버, 및 이를 구비한 기판 열처리 장치 및 시스템 | |
WO2005069359A1 (fr) | Dispositif de traitement de substrat et procede de production de dispositif semi-conducteur |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100428 |