JP2006515433A - 基板を均等に加熱するためのチャンバ - Google Patents
基板を均等に加熱するためのチャンバ Download PDFInfo
- Publication number
- JP2006515433A JP2006515433A JP2004565462A JP2004565462A JP2006515433A JP 2006515433 A JP2006515433 A JP 2006515433A JP 2004565462 A JP2004565462 A JP 2004565462A JP 2004565462 A JP2004565462 A JP 2004565462A JP 2006515433 A JP2006515433 A JP 2006515433A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- heater
- substrate
- heating
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 234
- 238000010438 heat treatment Methods 0.000 title claims abstract description 218
- 238000000034 method Methods 0.000 claims description 54
- 230000008569 process Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- 238000011068 loading method Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 239000010949 copper Substances 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010408 film Substances 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010959 steel Substances 0.000 description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000010425 asbestos Substances 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011152 fibreglass Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052895 riebeckite Inorganic materials 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000007743 anodising Methods 0.000 description 2
- 238000005524 ceramic coating Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 239000012857 radioactive material Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- -1 joints Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Liquid Crystal (AREA)
- Furnace Details (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43406402P | 2002-12-17 | 2002-12-17 | |
| PCT/US2003/039783 WO2004061914A2 (fr) | 2002-12-17 | 2003-12-15 | Chambre permettant de chauffer un substrat de maniere uniforme |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2006515433A true JP2006515433A (ja) | 2006-05-25 |
Family
ID=32713006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004565462A Withdrawn JP2006515433A (ja) | 2002-12-17 | 2003-12-15 | 基板を均等に加熱するためのチャンバ |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2006515433A (fr) |
| KR (1) | KR101035828B1 (fr) |
| CN (1) | CN1748285B (fr) |
| AU (1) | AU2003297065A1 (fr) |
| TW (1) | TWI279828B (fr) |
| WO (1) | WO2004061914A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2020136964A1 (ja) * | 2018-12-27 | 2021-09-09 | 株式会社アルバック | 真空処理装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326877B2 (en) * | 2004-12-01 | 2008-02-05 | Ultratech, Inc. | Laser thermal processing chuck with a thermal compensating heater module |
| KR100707788B1 (ko) * | 2005-02-04 | 2007-04-13 | 주식회사 테라세미콘 | 박막 트랜지스터 액정표시장치 열처리방법 및 그 열처리장치 |
| KR101073550B1 (ko) | 2009-10-29 | 2011-10-14 | 삼성모바일디스플레이주식회사 | 기판 열처리 장치 |
| CN102300342A (zh) * | 2010-06-24 | 2011-12-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种载板加热装置及应用该装置的等离子体处理设备 |
| US8517657B2 (en) * | 2010-06-30 | 2013-08-27 | WD Media, LLC | Corner chamber with heater |
| CN102508381B (zh) * | 2011-11-29 | 2015-02-11 | 深圳市华星光电技术有限公司 | 一种用于液晶面板的烘烤设备 |
| CN104269368A (zh) * | 2014-08-29 | 2015-01-07 | 沈阳拓荆科技有限公司 | 一种利用前端模块为晶圆加热的装置及方法 |
| JP2019119903A (ja) * | 2017-12-28 | 2019-07-22 | キヤノントッキ株式会社 | 基板加熱装置及び成膜装置 |
| CN112363335A (zh) * | 2020-11-12 | 2021-02-12 | 深圳市华星光电半导体显示技术有限公司 | 一种液晶面板烘烤设备 |
| CN114959659B (zh) * | 2022-03-31 | 2023-11-28 | 松山湖材料实验室 | 用于样品加热的加热装置 |
| WO2024144129A1 (fr) * | 2022-12-30 | 2024-07-04 | 주성엔지니어링(주) | Appareil de traitement de substrat et procédé de traitement de substrat |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3474258B2 (ja) * | 1994-04-12 | 2003-12-08 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| US5626680A (en) * | 1995-03-03 | 1997-05-06 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
| KR100245260B1 (ko) * | 1996-02-16 | 2000-02-15 | 엔도 마코토 | 반도체 제조장치의 기판 가열장치 |
| US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
-
2003
- 2003-12-15 JP JP2004565462A patent/JP2006515433A/ja not_active Withdrawn
- 2003-12-15 WO PCT/US2003/039783 patent/WO2004061914A2/fr active Application Filing
- 2003-12-15 CN CN200380109616.2A patent/CN1748285B/zh not_active Expired - Lifetime
- 2003-12-15 AU AU2003297065A patent/AU2003297065A1/en not_active Abandoned
- 2003-12-16 KR KR1020030091832A patent/KR101035828B1/ko active IP Right Grant
- 2003-12-16 TW TW92135659A patent/TWI279828B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2020136964A1 (ja) * | 2018-12-27 | 2021-09-09 | 株式会社アルバック | 真空処理装置 |
| JP7078752B2 (ja) | 2018-12-27 | 2022-05-31 | 株式会社アルバック | 真空処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040054514A (ko) | 2004-06-25 |
| KR101035828B1 (ko) | 2011-05-20 |
| CN1748285A (zh) | 2006-03-15 |
| TW200416798A (en) | 2004-09-01 |
| WO2004061914A2 (fr) | 2004-07-22 |
| AU2003297065A8 (en) | 2008-03-13 |
| CN1748285B (zh) | 2010-04-28 |
| TWI279828B (en) | 2007-04-21 |
| AU2003297065A1 (en) | 2004-07-29 |
| WO2004061914A3 (fr) | 2008-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20070306 |