CN1734799A - 在硅衬底上制备高质量铟镓铝氮材料的方法 - Google Patents
在硅衬底上制备高质量铟镓铝氮材料的方法 Download PDFInfo
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- CN1734799A CN1734799A CNA200510027808XA CN200510027808A CN1734799A CN 1734799 A CN1734799 A CN 1734799A CN A200510027808X A CNA200510027808X A CN A200510027808XA CN 200510027808 A CN200510027808 A CN 200510027808A CN 1734799 A CN1734799 A CN 1734799A
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- gallium
- aluminum
- indium
- nitrogen
- silicon substrate
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- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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CNB200510027808XA CN100372138C (zh) | 2005-07-13 | 2005-07-13 | 在硅衬底上制备铟镓铝氮材料的方法 |
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CNB200510027808XA CN100372138C (zh) | 2005-07-13 | 2005-07-13 | 在硅衬底上制备铟镓铝氮材料的方法 |
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CN1734799A true CN1734799A (zh) | 2006-02-15 |
CN100372138C CN100372138C (zh) | 2008-02-27 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108736317A (zh) * | 2018-05-15 | 2018-11-02 | 深圳市光脉电子有限公司 | 一种发光二极管外延结构及其矩阵式激光器器件 |
CN111430451A (zh) * | 2020-03-31 | 2020-07-17 | 华厦半导体(深圳)有限公司 | 一种氮化镓生长衬底及其制备方法 |
CN113078046A (zh) * | 2021-03-26 | 2021-07-06 | 华厦半导体(深圳)有限公司 | 一种氮化镓同质衬底及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3470623B2 (ja) * | 1998-11-26 | 2003-11-25 | ソニー株式会社 | 窒化物系iii−v族化合物半導体の成長方法、半導体装置の製造方法および半導体装置 |
CN1306624C (zh) * | 2003-07-16 | 2007-03-21 | 璨圆光电股份有限公司 | 选择性生长的发光二极管结构 |
CN1309013C (zh) * | 2004-03-05 | 2007-04-04 | 长春理工大学 | 硅衬底上生长低位错氮化镓的方法 |
CN100487927C (zh) * | 2004-10-26 | 2009-05-13 | 金芃 | 导电和绝缘复合氮化镓基生长衬底及其生产技术和工艺 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108736317A (zh) * | 2018-05-15 | 2018-11-02 | 深圳市光脉电子有限公司 | 一种发光二极管外延结构及其矩阵式激光器器件 |
CN111430451A (zh) * | 2020-03-31 | 2020-07-17 | 华厦半导体(深圳)有限公司 | 一种氮化镓生长衬底及其制备方法 |
CN113078046A (zh) * | 2021-03-26 | 2021-07-06 | 华厦半导体(深圳)有限公司 | 一种氮化镓同质衬底及其制备方法 |
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CN100372138C (zh) | 2008-02-27 |
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