CN1713359A - Etching system and treatment of etching agent - Google Patents
Etching system and treatment of etching agent Download PDFInfo
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- CN1713359A CN1713359A CN 200410059805 CN200410059805A CN1713359A CN 1713359 A CN1713359 A CN 1713359A CN 200410059805 CN200410059805 CN 200410059805 CN 200410059805 A CN200410059805 A CN 200410059805A CN 1713359 A CN1713359 A CN 1713359A
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Abstract
The etching system consists of a treating tank, a cooling tank, a forewarmer tank, a first pipeline transferring etching solution from treating tank to cooling tank, a second pipeline transferring the etching solution from cooling tank to forewarmer tank and a third pipelinge transferring etching solution from forewarmer tank to treating tank. The method includes following steps: first the etching solution is used to etch a silicon thin film, and then is cooled to first temperature to form a Silicon-saturated etching solution; after the silicide fine grain in silicon-saturated solution that is more than certain preset size is removed, it is heat up to a second temperature to form a non saturated etching solution in order to make next etching process. The second temperature is 10 DEG C higher than first temperature.
Description
Technical field
The present invention relates to a kind of etch system and etching solution processing method thereof, particularly relate to a kind of etch system and etching solution processing method thereof with stable nitrogenize silicon/oxidative silicon etching selectivity.
Background technology
Fig. 1 to Fig. 3 illustration has the shallow trench isolation that carries out now from manufacturing process on a wafer 10.In ic manufacturing process, (metal-oxide-semiconductor, MOS) manufacturing process often uses shallow trench isolation to form transistor electrical isolation each other from manufacturing process to metal-oxide semiconductor (MOS).As shown in Figure 1, shallow trench isolation at first forms a pad oxide 14, a silicon nitride layer 16 and a photoresist layer 18 in regular turn from manufacturing process on a silicon substrate 12, then with the active region photomask with the design transfer of active region to photoresist layer 18.
With reference to figure 2, then silicon nitride layer 16 and the silicon oxide layer 14 that not covered by photoresist layer 18 with dry-etching removed from silicon substrate 12.Afterwards, dry-etching continues downward etching silicon substrate 12 to form a shallow trench 20 among silicon substrate 12.
With reference to figure 3, after photoresist layer 18 was removed, the surface of shallow trench 20 was with the thermal oxidation manufacturing process substrate oxide layer 22 of growing up.Then silica is inserted among the shallow trench 20 with chemical vapour deposition technique, and with the surface of cmp technology planarization wafer 10.At last, with the wet etching manufacturing process silicon nitride layer 16 is divested on silicon substrate 12 again, and stay silica in silicon oxide layer 14 and the shallow trench 20.MOS transistor then is formed at the active region 24 of shallow trench 20 both sides by follow-up manufacturing process, the silica in the shallow trench 20 then forms MOS transistor electrical isolation each other.
Existing shallow trench isolation is from the phosphoric acid (H of manufacturing process use through heating
3PO
4) divest silicon nitride layer 16.Because the manufacturing process of follow-up making MOS transistor is divested the surface configuration of the wafer 10 behind the silicon nitride layer 16 and the influence of cleanliness factor deeply, etching selectivity therefore how to control silicon nitride and silica becomes very important.The etching selectivity of silicon nitride and silica mainly is subjected to parameter influences such as etchant species, reaction product, reaction temperature and reaction time, and therefore must properly control these parameters can realize good etching ratio.
Fig. 4 illustration one existing Etaching device 30.As shown in Figure 4, Etaching device 30 comprises a treatment trough 32, a fore-warmer tank 34 and the etching solution that is made of phosphoric acid and deionized water.When carrying out the etching manufacturing process, the etching solution in the treatment trough 32 is heated and maintains the silicon nitride layer 16 to divest wafer 10 between 150 ℃ to 160 ℃.Fore-warmer tank 34 will be preheated between 120 ℃ to 140 ℃ from the be engaged in phosphoric acid of pipeline 40 of factory, be delivered to treatment trough 32 to replenish the etching solution that treatment trough 32 is discharged via pipeline 38 via pipeline 36 again.
Fig. 5 and Fig. 6 show that the silicon concentration of etching solution in the treatment trough 32 changes.As shown in Figure 5, because the etching reaction that carries out silicon nitride can generate silicide, so the silicon concentration of silicide can carry out number of times (being the reaction time) and increases along with etching reaction in the etching solution in the treatment trough 32.When the silicon concentration of etching solution continues to increase and becomes saturation condition (silicon concentration is approximately 100ppm), will produce the silicide particulate.The generation of silicide particulate can seriously influence the cleanliness factor on post etch wafer 10 surfaces, and for example one 0.2 micron silicide microparticle residue can seriously cause ic failure in wafer 10 surfaces to 0.13 micro MOS manufacturing process.
With reference to figure 4, for fear of the generation of silicide particulate, existing Etaching device 30 by pipeline 42 and filter 44 (filter) constantly the etching solution in the circulating filtration treatment trough 32 to remove silicide particulate wherein.Only, when the silicide particle number that produces was too much, filter 44 was easy to lose efficacy because of the silicide particulate blocks.Therefore, (promptly before silicon concentration reaches 100ppm) must discharge the etching solution in the treatment trough 32 via pipeline 38 fully after carrying out the several etching reaction, produces too much silicide particulate by the brand-new etching solution of fore-warmer tank 34 supplies (silicon concentration is zero) to treatment trough 32 to avoid treatment trough 32 interior silicon concentrations to present saturation condition again.So, the silicon concentration change curve 52 of the etching solution in the treatment trough 32 changes between zero and 100ppm and presents zigzag, as shown in Figure 5.
The etching selectivity of silicon nitride and silica is subjected to the influence of the silicon concentration in the etching solution deeply.Yet the silicon concentration of the etching solution in the treatment trough 32 is not to be maintained certain value, and is gradually changed to the silicon saturated concentration by zero (when upgrading etching solution fully).Therefore, the etching selectivity of silicon nitride and silica also changes with the access times of etching solution, causes the control difficulty increase of fabrication process parameters such as etching period.
The present processing method of industrial circle is when upgrading etching solution (silicon concentration is zero) fully, after carrying out test-manufacturing (dummy run) silicon concentration to a predetermined value for several times with control sheet (dummy wafer) earlier, carry out the etching manufacturing process of actual wafer again with the lifting etching solution.Yet this processing method has reduced the utilization benefit of etching solution significantly.Moreover, phosphoric acid etch liquid is upgraded the use amount that has obviously also increased phosphoric acid fully, cause the increase of etching cost.Please refer to Fig. 6, another kind of etching solution processing method for periodically via pipeline 38 discharge section phosphoric acid etch liquid, and via the brand-new phosphoric acid of pipeline 36 supply equivalent to treatment trough 32.So, the silicon concentration change curve 62 of the etching solution in the treatment trough 32 has less excursion.Change with the etching reaction time with respect to the silicon concentration in the treatment trough 32, the phosphoric acid in the fore-warmer tank 34 is not directly had the source of any generation silicon by 40 supplies of factory's affair pipeline, so its silicon concentration is essentially zero.Therefore, this processing method still needs to carry out test manufacture for several times to promote the silicon concentration of etching solution with the control sheet when upgrading the etching solution of treatment trough 32 fully.
Summary of the invention
Main purpose of the present invention provides a kind of etch system and etching solution processing method thereof with stable nitrogenize silicon/oxidative silicon etching selectivity.
For reaching above-mentioned purpose, the present invention discloses a kind of etch system and etching solution processing method thereof with stable nitrogenize silicon/oxidative silicon etching selectivity.This etch system comprises that one has treatment trough, a cooling bath, a fore-warmer tank, that contains silicon etching liquid and can carry this etching solution to first pipeline, of this cooling bath to carry this etching solution to second pipeline and of this fore-warmer tank to carry three pipeline of this etching solution to this treatment trough from this fore-warmer tank from this cooling bath from this treatment trough.
Etching solution processing method of the present invention at first utilizes an etching solution to carry out the etching manufacturing process of a silicon-containing film, then this etching solution is cooled to one first temperature to form the saturated etching solution of a silicon.After the silicide micro particle filtering removal greater than a preliminary dimension in the saturated etching solution of this silicon, the more saturated etching solution heating of this silicon more than at least 10 ℃, is made it to form a unsaturation etching solution.Afterwards, utilize this unsaturation etching solution to carry out another time etching manufacturing process.
Compared to existing skill, etching solution of the present invention has less silicon concentration constant interval, thereby can stably control the etching selectivity of nitrogenize silicon/oxidative silicon.Moreover the present invention does not need frequently to discharge used etching solution, thereby can reduce the cost of etching manufacturing process significantly.
Description of drawings
Fig. 1 to Fig. 3 illustration has the shallow trench isolation that carries out now from manufacturing process on a wafer;
Fig. 4 illustration one existing Etaching device;
Fig. 5 and Fig. 6 show that the silicon concentration of existing etching solution changes;
Fig. 7 shows the relation of silicon concentration and the etch-rate and the silicide particle concentration of etching solution;
Fig. 8 shows the silicon saturated concentration (being the solubility of silicon) of etching solution and the relation of temperature;
Fig. 9 illustration etch system of the present invention; And
Figure 10 shows that the silicon concentration of etching solution of the present invention changes.
The simple symbol explanation
10 wafers, 12 silicon substrates
14 pad oxides, 16 silicon nitride layers
18 photoresist layers, 20 shallow trench
22 substrate oxide layers, 24 active regions
30 etch systems, 32 treatment troughs
34 fore-warmer tanks, 36 pipelines
38 pipelines, 40 factories affair pipeline
42 pipelines, 44 filters
52 curves, 62 curves
72 curves, 74 curves
76 curves, 92 curves
100 etch systems, 102 treatment troughs
104 cooling baths, 106 fore-warmer tanks
111 valves, 112 pipelines
113 valves, 114 pipelines
116 pipelines, 118 factories affair pipeline
120 filters, 122 arrival ends
124 ports of export, 131 valves
132 pipelines, 133 valves
134 pipelines, 141 valves
142 pipelines, 143 valves
144 pipelines
Embodiment
Fig. 7 shows the relation of silicon concentration and the etch-rate and the silicide particle concentration of etching solution.Curve 72 is the etch-rate curve of silicon nitride, and curve 74 is the etch-rate curve of silica, and curve 76 then is a silicide particle concentration change curve.As shown in Figure 7, the etch-rate of silicon nitride is not influenced by silicon concentration in fact and is certain value, about 90 dusts/minute.Relatively, the etch-rate of silica reduces along with the increase of silicon concentration, and is certain value when silicon concentration surpasses 100ppm, about 0.2 dust/minute.When silicon concentration was above greater than 100ppm, the silicide particle concentration of etching solution increased along with the increase of silicon concentration.
Fig. 8 shows the silicon saturated concentration (being the solubility of silicon) of etching solution and the relation of temperature.As shown in Figure 8, when the temperature of etching solution was 80 ℃, 120 ℃ and 160 ℃, silicon was full of concentration and is approximately 20ppm, 40ppm and 120ppm respectively.That is, promote the temperature of etching solution, can increase the solubility of silicon.Because as can be known, the temperature that reduces etching solution can promote the silicon of etching solution to form silicide particulate (solid phase) and reduce the silicon concentration of etching solution (liquid phase), and solid phase silicide particulate can filter in the self etching liquid by filter and removes.
Fig. 9 illustration etch system 100 of the present invention.As shown in Figure 9, etch system 100 comprises that one has treatment trough 102, a cooling bath 104, a fore-warmer tank 106, that contains silicon etching liquid and can carry these etching solutions to the pipeline 112, of this cooling bath 104 to carry these etching solutions to the pipeline 114 and of this fore-warmer tank 106 to carry the pipeline 116 of these etching solutions to this treatment trough 102 from this fore-warmer tank 106 from this cooling bath 104 from this treatment trough 102.In addition, this fore-warmer tank 106 also can be via factory's brand-new etching solution of pipeline 118 supply of being engaged in.
This cooling bath 104 is cooled to one first temperature so that the silicon concentration of this etching solution is a saturation condition with the etching solution in the groove, and wherein this first temperature is preferably between 80 ℃ to 120 ℃.This fore-warmer tank 106 is heated to one second temperature so that the silicon concentration of this etching solution is a unsaturated state with the etching solution in the groove, and wherein this second temperature is higher than at least 10 ℃ of this first temperature.This fore-warmer tank 106 will be delivered to this treatment trough 102 so that carry out the wet etching manufacturing process via pipeline 116 after will heating from the etching solution of this cooling bath 104.The temperature of the etching solution in this treatment trough 102 can be between 130 ℃ to 160 ℃.Preferably, this fore-warmer tank 106 directly is heated to the temperature of carrying out etching reaction with the etching solution in the groove, is delivered to treatment trough 102 via pipeline 116 again.
When carrying out the cleaning of this filter 120, valve-off 131 and 133 is to avoid the silicide particulate on this filter 120 to be back to this cooling bath 104.During the silicide particulate of this filter 120 in filtering this cooling bath 104, valve 141 and 143 is closed condition.Moreover, when filter rinsed 120, can supply etching solution to fore-warmer tank 106 to suspend, and this fore-warmer tank 106 can during cleaning, filter 120 continue the supply etching solution to this treatment trough 102 because of having stored many etching solutions with valve 113 temporary closes.After the cleaning of finishing filter 120 and filtering silicide particulate in this cooling bath 104, again valve 113 is opened so that supply etching solution to this fore-warmer tank 106.
Survey downsizing along with the design of semiconductor fabrication process is accurate, the particle size of being allowed in the etching solution also dwindles accordingly, thereby must select the filter 120 (for example perforate below 0.1 micron) with less perforate for use.Only, because less perforate is easy to lose efficacy because of particulate stops up, therefore must or changes frequency and the particulate in the etching solution can be removed by the cleaning that increases filter to guarantee to filter.Filter 120 of the present invention is when cleaning or change, and the etching solution that the still sustainable supply of this fore-warmer tank 106 is handled through circulating filtration is to this treatment trough 102.That is the present invention increases the cleaning frequency of filter 120 under the supply that does not influence etching solution, thereby optional usefulness has the filter 120 of less perforate with the semiconductor fabrication process in response to future.
Figure 10 shows that the silicon concentration of etching solution in this treatment trough 102 changes.The present invention can control the silicon concentration of etching solution in this treatment trough 102 indirectly by the temperature of this cooling bath 104 of control.Etching solution in this cooling bath 104 is the silicon saturation condition, and its silicon concentration is decided according to the temperature of cooling bath 104.This fore-warmer tank 106 only merely will can't change the silicon concentration of etching solution from the etching solution heating of this cooling bath 104 when not injecting new etching solution via factory's affair pipeline 118.Be delivered to the silicon concentration of etching solution of this treatment trough 102 and non-vanishing from this fore-warmer tank 106, and be maintained certain value.The silicon concentration that adds the etching solution of treatment trough 32 than prior art is zero, thereby cause bigger change in concentration interval (as the curve 62 of Figure 10), the present invention is also non-vanishing because of the silicon concentration of the etching solution of adding treatment trough 102, so silicon concentration change curve 92 has less change in concentration interval.Said system, even can be with etching solution with firm discharge continous way input and output treatment trough 102, and make the silicon concentration change curve become stable and less than saturated concentration.
Moreover, the silicon concentration of etching solutions is that zero (please join Fig. 4,5 and 6) and treatment trough 32 must periodically discharge used etching solution in the fore-warmer tank 34 of prior art, the present invention is because this cooling bath 104 can be supplied the etching solution that reclaims through circulation to this fore-warmer tank 106, therefore the silicon concentration of this fore-warmer tank 106 is also non-vanishing, so this treatment trough 102 must not use the useless sheet of control to test-manufacture.
In addition, phosphoric acid only as catalyst, can not consume because of etching reaction in etching solution.Yet prior art must be discharged used etching solution, and causing the cost increase of etching manufacturing process and handling etching waste liquor also increases extra cost.Relatively, the present invention need not discharge used etching solution, can reduce the cost of etching manufacturing process significantly.
In brief, etching solution processing method of the present invention at first utilizes an etching solution to carry out the etching manufacturing process of a silicon-containing film, then this etching solution is cooled between 80 ℃ to 120 ℃ to form the saturated etching solution of a silicon.After the silicide micro particle filtering removal greater than a preliminary dimension (for example 0.1 micron) in the saturated etching solution of this silicon, the more saturated etching solution heating of this silicon more than at least 10 ℃, is made it to form a unsaturation etching solution.Afterwards, utilize this unsaturation etching solution to carry out another time etching manufacturing process.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (17)
1. etch system comprises:
One treatment trough has one and contains silicon etching liquid;
One cooling bath;
One first pipeline can carry this etching solution to this cooling bath from this treatment trough;
One fore-warmer tank;
One second pipeline can carry this etching solution to this fore-warmer tank from this cooling bath; And
One the 3rd pipeline can carry this etching solution to this treatment trough from this fore-warmer tank.
2. etch system as claimed in claim 1, wherein the etching solution in this cooling bath is cooled to one first temperature, uses so that the silicon concentration of this etching solution is a saturation condition.
3. etch system as claimed in claim 2, wherein this first temperature is between 80 ℃ to 120 ℃.
4. etch system as claimed in claim 2, wherein this fore-warmer tank is heated to one second temperature with this etching solution, uses so that the silicon concentration of this etching solution is a unsaturated state.
5. etch system as claimed in claim 4, wherein this second temperature is higher than at least 10 ℃ of this first temperature.
6. etch system as claimed in claim 1, it also comprises:
One filter has an arrival end and a port of export;
One the 4th pipeline is carried the arrival end of this etching solution to this filter in order to this cooling bath certainly; And
One the 5th pipeline carries this etching solution to this cooling bath in order to the port of export of this filter certainly.
7. etch system as claimed in claim 6, wherein this filter has a plurality of perforates less than 0.1 micron, can remove in this etching solution the silicide particulate greater than this perforate.
8. etch system as claimed in claim 7, it comprises in addition:
One the 6th pipeline is connected in the arrival end of this filter; And
One the 7th pipeline is connected in the port of export of this filter;
Wherein the solution that can comprise hydrofluoric acid from the 6th pipeline input one to be dissolving the silicide particulate on this filter, and the 7th pipeline output certainly.
9. etch system as claimed in claim 7, it also comprises:
One the 6th pipeline is connected in the arrival end of this filter; And
One the 7th pipeline is connected in the port of export of this filter;
Wherein can import a deionized water with the silicide particulate on this filter of cleaning removal from the 7th pipeline, and the 6th pipeline output certainly.
10. etch system as claimed in claim 1, wherein the etching solution temperature in this treatment trough equals the etching solution temperature in this fore-warmer tank.
11. an etching solution processing method comprises:
Utilize an etching solution to carry out the etching manufacturing process of a silicon-containing film;
Cool off this etching solution to one first temperature, to form the saturated etching solution of a silicon;
Filter in the saturated etching solution of this silicon silicide particulate greater than a preliminary dimension;
Heat saturated etching solution to one second temperature of this silicon, to form a unsaturation etching solution; And
Utilize this unsaturation etching solution to carry out another etching manufacturing process.
12. as the etching solution processing method of claim 11, wherein this first temperature is between 80 ℃ to 120 ℃.
13. as the etching solution processing method of claim 11, wherein this second temperature is higher than at least 10 ℃ of this first temperature.
14. etching solution processing method as claim 11, wherein filter this silicide particulate with the saturated etching solution of this silicon with a concurrent by a filter, this filter has a plurality of perforates less than 0.1 micron to remove in the saturated etching solution of this silicon the silicide particulate greater than this perforate.
15. as the etching solution processing method of claim 14, it also comprises a deionized water with a reflux type by this filter, to remove the silicide particulate on this filter.
16. as the etching solution processing method of claim 14, it comprises that also the solution with a hydrofluoric acid containing passes through this filter with a concurrent, to remove the silicide particulate on this filter.
17. as the etching solution processing method of claim 11, wherein this etching manufacturing process is carried out under this second temperature.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB200410059805XA CN100399518C (en) | 2004-06-22 | 2004-06-22 | Etching system and treatment of etching agent |
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| CNB200410059805XA CN100399518C (en) | 2004-06-22 | 2004-06-22 | Etching system and treatment of etching agent |
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| CN1713359A true CN1713359A (en) | 2005-12-28 |
| CN100399518C CN100399518C (en) | 2008-07-02 |
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| CNB200410059805XA Expired - Fee Related CN100399518C (en) | 2004-06-22 | 2004-06-22 | Etching system and treatment of etching agent |
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| CN102420127A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Pipeline system and method for improving stability of etching speed selectivity ratio |
| CN107516695A (en) * | 2017-08-18 | 2017-12-26 | 浙江晶科能源有限公司 | A kind of cooling device of polycrystal silicon cell groove type etching equipment |
| CN110010459A (en) * | 2017-12-28 | 2019-07-12 | 东京毅力科创株式会社 | Processing method for substrate and substrate processing device |
| CN111180330A (en) * | 2018-11-09 | 2020-05-19 | 东京毅力科创株式会社 | Substrate processing method, substrate processing apparatus, and storage medium |
| CN111453998A (en) * | 2020-05-25 | 2020-07-28 | 福建和达玻璃技术有限公司 | High-efficiency glass casing metal texture surface treatment equipment and method |
| CN112573833A (en) * | 2019-09-29 | 2021-03-30 | 比亚迪股份有限公司 | Method for treating surface of section bar |
| WO2022007522A1 (en) * | 2020-07-10 | 2022-01-13 | 长鑫存储技术有限公司 | Liquid supply system and liquid supply method |
| WO2023060792A1 (en) * | 2021-10-15 | 2023-04-20 | 中国科学院上海微系统与信息技术研究所 | Combined etching liquid, etching system and etching method |
| WO2023071826A1 (en) * | 2021-10-27 | 2023-05-04 | 中国科学院上海微系统与信息技术研究所 | Wet etching device and wet etching method |
| CN116837466A (en) * | 2023-08-31 | 2023-10-03 | 合肥晶合集成电路股份有限公司 | Phosphoric acid etching solution recovery method and etching method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5372653A (en) * | 1993-05-28 | 1994-12-13 | Courtaulds Fibres (Holdings) Limited | Cleaning of filters |
| US6354310B1 (en) * | 1998-11-12 | 2002-03-12 | General Electric Company | Apparatus and process to clean and strip coatings from hardware |
| US6207068B1 (en) * | 1998-11-18 | 2001-03-27 | Advanced Micro Devices, Inc. | Silicon nitride etch bath system |
| US6313011B1 (en) * | 1999-10-28 | 2001-11-06 | Koninklijke Philips Electronics N.V. (Kpenv) | Method for suppressing narrow width effects in CMOS technology |
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| CN102420127A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Pipeline system and method for improving stability of etching speed selectivity ratio |
| CN102420127B (en) * | 2011-07-01 | 2013-08-07 | 上海华力微电子有限公司 | Pipeline system and method for improving stability of etching speed selectivity ratio |
| CN107516695A (en) * | 2017-08-18 | 2017-12-26 | 浙江晶科能源有限公司 | A kind of cooling device of polycrystal silicon cell groove type etching equipment |
| CN110010459A (en) * | 2017-12-28 | 2019-07-12 | 东京毅力科创株式会社 | Processing method for substrate and substrate processing device |
| CN110010459B (en) * | 2017-12-28 | 2024-02-23 | 东京毅力科创株式会社 | Substrate processing method and substrate processing apparatus |
| CN111180330A (en) * | 2018-11-09 | 2020-05-19 | 东京毅力科创株式会社 | Substrate processing method, substrate processing apparatus, and storage medium |
| CN112573833A (en) * | 2019-09-29 | 2021-03-30 | 比亚迪股份有限公司 | Method for treating surface of section bar |
| CN111453998B (en) * | 2020-05-25 | 2022-07-12 | 福建和达玻璃技术有限公司 | High-efficiency glass casing metal texture surface treatment equipment and method |
| CN111453998A (en) * | 2020-05-25 | 2020-07-28 | 福建和达玻璃技术有限公司 | High-efficiency glass casing metal texture surface treatment equipment and method |
| WO2022007522A1 (en) * | 2020-07-10 | 2022-01-13 | 长鑫存储技术有限公司 | Liquid supply system and liquid supply method |
| WO2023060792A1 (en) * | 2021-10-15 | 2023-04-20 | 中国科学院上海微系统与信息技术研究所 | Combined etching liquid, etching system and etching method |
| WO2023071826A1 (en) * | 2021-10-27 | 2023-05-04 | 中国科学院上海微系统与信息技术研究所 | Wet etching device and wet etching method |
| CN116837466A (en) * | 2023-08-31 | 2023-10-03 | 合肥晶合集成电路股份有限公司 | Phosphoric acid etching solution recovery method and etching method |
| CN116837466B (en) * | 2023-08-31 | 2023-12-08 | 合肥晶合集成电路股份有限公司 | Phosphoric acid etching solution recovery method and etching method |
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